UNISONIC TECHNOLOGIES CO., LTD

Similar documents
UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD U74LVC1G125

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD U2429

UNISONIC TECHNOLOGIES CO., LTD UR133/A

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD U74HC14

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD U74HC164

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD L16B45 Preliminary CMOS IC

UNISONIC TECHNOLOGIES CO., LTD

UNISONIC TECHNOLOGIES CO., LTD UR6225

UNISONIC TECHNOLOGIES CO., LTD U74AHC1G66

UNISONIC TECHNOLOGIES CO., LTD R070LD10

UNISONIC TECHNOLOGIES CO., LTD LM78XX

UNISONIC TECHNOLOGIES CO., LTD U74HC244

UNISONIC TECHNOLOGIES CO., LTD

ATS276 X - P X - B - X. Lead Free L : Lead Free G : Green

UNISONIC TECHNOLOGIES CO., LTD

HIGH VOLTAGE HALL EFFECT LATCH General Description. Features. Applications

Block Diagram 1 REG. VCC 2 Hall Plate Amp B 3 GND 4 Pin Assignment 277 (276) Front View 1 : VCC 2 : 3 : B :GND Name P/I/O Pin # Desc

S-57M1 Series HIGH-SPEED BIPOLAR HALL EFFECT LATCH. Features. Applications. Package. ABLIC Inc., Rev.1.

UNISONIC TECHNOLOGIES CO., LTD TDA7269

ATS177. General Description. Features. Applications. Ordering Information SINGLE OUTPUT HALL EFFECT LATCH ATS177 - P L - X - X

S-5743 A Series 125 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC. Features. Applications. Package.

UNISONIC TECHNOLOGIES CO., LTD

S-57P1 S Series FOR AUTOMOTIVE 150 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC. Features. Applications.

General Description DTS27X X -X X X -X. Lead. 27X coil1. R1 = R2 = 470Ω C1 = C2 = 2.2 μ F The R, C value need to be fine tuned base on coils design.

S-5841 Series TEMPERATURE SWITCH IC (THERMOSTAT IC) Features. Applications. Packages. Seiko Instruments Inc. 1.

S-57K1 A Series FOR AUTOMOTIVE 125 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC. Features. Applications.

UNISONIC TECHNOLOGIES CO., LTD L16B40 Preliminary CMOS IC

Detection of S pole Detection of N pole Active "L" Active "H" Nch open-drain output Nch driver built-in pull-up resistor. f C = 250 khz typ.

74HC General description. 2. Features. 3-to-8 line decoder, demultiplexer with address latches; inverting

ABLIC Inc., Rev.2.2_02

The 74HC21 provide the 4-input AND function.

S-5725 Series HIGH-SPEED BIPOLAR HALL EFFECT LATCH. Features. Applications. Packages. ABLIC Inc., Rev.2.

DATA SHEET. PEMD48; PUMD48 NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS

DATA SHEET. PBSS5350D 50 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 13.

DATA SHEET. BC846W; BC847W; BC848W NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 23

DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Apr 09

DATA SHEET. PH2369 NPN switching transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Oct 11.

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

DATA SHEET. BC846; BC847; BC848 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Feb 04

PMV65XP. 1. Product profile. 2. Pinning information. P-channel TrenchMOS extremely low level FET. 1.1 General description. 1.

DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 12

S-1000 Series ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR. Features. Applications. Packages. Seiko Instruments Inc. 1.

DATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28.

DATA SHEET. BSN304 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jun 17

74HC General description. 2. Features. Octal D-type flip-flop; positive-edge trigger; 3-state; inverting

DISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D302. PMEM4020ND NPN transistor/schottky-diode module. Product data sheet 2003 Nov 10

DATA SHEET. BSS192 P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jun 20

DATA SHEET. PBSS4540Z 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 14.

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20

PHT6N06T. 1. Product profile. 2. Pinning information. TrenchMOS standard level FET. 1.1 Description. 1.2 Features. 1.

INTEGRATED CIRCUITS. 74LV00 Quad 2-input NAND gate. Product specification Supersedes data of 1998 Apr 13 IC24 Data Handbook.

DISCRETE SEMICONDUCTORS DATA SHEET M3D071. BAT74 Schottky barrier double diode. Product specification Supersedes data of 1996 Mar 19.

DATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01.

DISCRETE SEMICONDUCTORS DATA SHEET. PMBT3906 PNP switching transistor. Product specification Supersedes data of 1999 Apr 27.

DATA SHEET. BSN254; BSN254A N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS

Detection of both poles, S pole or N pole Active "L", active "H" Nch open-drain output, CMOS output

INTEGRATED CIRCUITS. 74LV688 8-bit magnitude comparator. Product specification Supersedes data of 1997 May 15 IC24 Data Handbook.

IRFR Description. 2. Features. 3. Applications. 4. Pinning information. N-channel enhancement mode field effect transistor

DATA SHEET. BC369 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Nov 20.

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG02FU IN A GND

N-channel µtrenchmos ultra low level FET. Top view MBK090 SOT416 (SC-75)

DATA SHEET. BC817DPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Aug 09.

2N7002T. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.

TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package.

8-bit binary counter with output register; 3-state

V DET1(S) to V DET3(S) = 10.5 V to 21.5 V (0.1 V step)

PMV56XN. 1. Product profile. 2. Pinning information. µtrenchmos extremely low level FET. 1.1 Description. 1.2 Features. 1.

PMV40UN. 1. Product profile. 2. Pinning information. TrenchMOS ultra low level FET. 1.1 Description. 1.2 Features. 1.

SMD version of BUK125-50L

Hex inverting Schmitt trigger with 5 V tolerant input

PHP/PHB/PHD55N03LTA. TrenchMOS Logic Level FET

PMN40LN. 1. Description. 2. Features. 3. Applications. 4. Pinning information. TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

PSMN004-60P/60B. PSMN004-60P in SOT78 (TO-220AB) PSMN004-60B in SOT404 (D 2 -PAK).

PINNING - SOT93 PIN CONFIGURATION SYMBOL. tab

MT3451 Series BiCMOS, Latch, Hall-Effect Magnetic Position Sensors

µtrenchmos standard level FET Low on-state resistance in a small surface mount package. DC-to-DC primary side switching.

TrenchMOS ultra low level FET

PMWD16UN. 1. Product profile. 2. Pinning information. Dual N-channel µtrenchmos ultra low level FET. 1.1 General description. 1.

P-channel enhancement mode MOS transistor

PSMN002-25P; PSMN002-25B

Transcription:

UNISONIC TECHNOLOGIES CO., LTD BIPOLAR LATCH TYPE HALL EFFECT FOR HIGH-TEMPERATURE OPERATION DESCRIPTION 1 SIP-3 The UTC SK1816 is a semiconductor integrated circuit utilizing the Hall effect. It designed to operate in the alternating magnetic field especially at low supply voltage and operation over extended temperature ranges to +125 С. This Hall IC is suitable for application to various kinds of sensors, contact-less switches, such as Speed sensor, Position sensor, Rotation sensor, Contact-less sensor, and Motor control. FEATURES 3 2 1 SOT-23 (EIAJ SC-59) * Wide Supply Voltage Range of 2.5V to 20V * Wide Temperature Operation Range of -30 С ~+125 С * Alternating Magnetic Field Operation * Built-in Protection Diode * TTL and MOS IC are Directly Drivable by the Output * The life is Semi Permanent because it Employs Contact-Less Parts * SIP-3 and SOT-23 Package are Available. ORDERING INFORMATION Note: Pin Assignment: I: V CC Ordering Number Package Pin Assignment 1 2 3 Packing SK1816G-AE3-R SOT-23 O I G Tape Reel SK1816G-G03-B SIP-3 I G O Tape Box SK1816G-G03-K SIP-3 I G O Bulk O:V OUT G:GND MARKING SIP-3 SOT-23 1816G 1 of 8 Copyright 2015 Unisonic Technologies Co., Ltd

BLOCK DIAGRAM UNISONIC TECHNOLOGIES CO., LTD 2 of 8

ABSOLUTE MAXIMUM RATINGS (T A =25 С) PARAMETER SYMBOL RATINGS UNIT Supply Voltage V CC 2.5~20 V Supply Current I CC 10 ma Circuit Current I O 20 ma Power Dissipation SIP-3 400 mw P D SOT-23 200 mw Operating Temperature T OPR -30 ~ +125 С Storage Temperature T STG -40 ~ +150 С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (T A =25 С, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Low-Level Output Voltage V OL V CC = 16V, I OUT =12mA, B=30 mt 0.2 0.7 V V CC =3.6V, I OUT =12mA, B=30 mt 0.3 0.7 V Output Leakage Current I LEAK V CC =16V, B=-30 mt 1 10 μa Supply Current I CC V CC =16V 6 10 ma V CC =3.6V 5.5 10 ma Output Switching Time T R V CC =16V, R L =10KΩ, C L =10pF 5 μs T F V CC =16V, R L =10KΩ, C L =10pF 1 μs MAGNETIC CHARACTERISTICS Operate Point B OP At T A =25 С 5 mt Release Point B RP At T A =25 С -5 mt Hysteresis B HYS At T A =25 С 5.5 10 mt Note: 1. BOP=operate point (output turns ON); BRP =release point (output turns OFF); BHYS =hysteresis(bop BRP). As used here, negative flux densities are defined as less than zero (algebraic convention). Typical values are at T A =25 С and VCC =12V. 2. 1mT=10 gauss UNISONIC TECHNOLOGIES CO., LTD 3 of 8

PACKAGE INFORMATION Fig. 1 SENSOR LOCATIONS S Marked face N Marked face 1 2 3 1. V CC 2. GND 3. Output 2 3 1 1. Output 2. V CC 3. GND N SIP-3 S SOT-23 H V OUT B H L B RP B OP 0 Magnetic flux density Fig. 2 APPLYING DIRECTION OF MAGNETIC FLUX UNISONIC TECHNOLOGIES CO., LTD 4 of 8

TYPICAL APPLICATION CIRCUIT FOR DC FAN 1 Coil 2 Coil 1 FOR DC FAN 2 TEST CIRCUIT VIN SK1816 10KΩ 10P DO UNISONIC TECHNOLOGIES CO., LTD 5 of 8

TYPICAL CHARACTERISTICS Current (ma) Current (ma) Magnetic Field (G) Magnetic Field (G) 30.5 Temperature vs Sink 29.0 Voltage vs Sink 30.0 29.5 Sink 28.8 28.6 Sink Sink (ma) 29.0 28.5 28.0 Sink (ma) 28.4 28.2 28.0 27.5 27.0 26.5-20 0 10 25 55 75 95 115 125 Temperature ( С) 27.8 27.6 27.4 3 5 12 15 20 27 Voltage (V) UNISONIC TECHNOLOGIES CO., LTD 6 of 8

TYPICAL CHARACTERISTICS(Cont.) Switch Point IN Gaues Hysteresis IN Gaues Output Sink Current 30.5 6 Supply Current Sink Current (ma) 30.0 29.5 29.0 28.5 28.0 27.5 27.0 Supply Current (ma) 5 4 3 2 1 26.5-20 0 10 25 55 75 95 115 125 Ambient Temperature ( С) 0-20 0 10 25 55 75 95 115 125 Ambient Temperature ( С) UNISONIC TECHNOLOGIES CO., LTD 7 of 8

UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD 8 of 8