Low Drop Voltage Regulator TLE 4296

Similar documents
Low Drop Voltage Regulator TLE

Low Drop Voltage Regulator TLE 4295

5 V/10 V Low Drop Voltage Regulator TLE 4266

5-V Low Drop Fixed Voltage Regulator TLE 4275

5-V Low Drop Fixed Voltage Regulator TLE

Data Sheet, Rev. 1.1, February 2008 TLE4294GV50. Low Drop Out Voltage Regulator. Automotive Power

5-V Low Drop Voltage Regulator TLE 4290

5-V Low Drop Fixed Voltage Regulator TLE 4279

Low-Drop Voltage Tracker TLE 4250 G

5-V Low Drop Fixed Voltage Regulator TLE

Dual Low Dropout Voltage Regulator

Dual Low-Drop Voltage Regulator TLE 4470

TLE42344G. Data Sheet. Automotive Power. Low Dropout Linear Voltage Regulator. Rev. 1.0,

5-V Low Drop Voltage Regulator TLE 4263

1-A Dual-HBD (Dual-Half-Bridge Driver) TLE4207G

TLE Data Sheet. Automotive Power. Low Dropout Fixed Voltage Regulator TLE42644G. Rev. 1.1,

5-V Low Drop Fixed Voltage Regulator TLE 4299

TLE Data Sheet. Automotive Power. 5-V Low Dropout Voltage Regulator TLE7274-2E TLE7274-2D TLE7274-2G. Rev. 1.01,

5-V Low-Drop Fixed Voltage Regulator TLE 4269

IFX8117. Data Sheet. Standard Power. 1A Low-Dropout Linear Voltage Regulator IFX8117MEV IFX8117MEV33 IFX8117MEV50. Rev. 1.

TLF80511TF. Data Sheet. Automotive Power. Low Dropout Linear Fixed Voltage Regulator TLF80511TFV50 TLF80511TFV33. Rev. 1.

DC Motor Driver for Servo Driver Applications

Low-Drop Fixed Voltage Regulator TLE 4299

TLF80511EJ. Data Sheet. Automotive Power. Low Dropout Linear Fixed Voltage Regulator TLF80511EJV50 TLF80511EJV33. Rev. 1.

Data Sheet, Rev. 1.5, Sept TLE4209G. Automotive Power

Green Product (RoHS compliant) AEC Qualified

single single single 150 C Operating temperature range T op Storage temperature T stg

Pb-free (RoHS compliant) package Qualified according AEC Q101 C1 (2) Type Marking Pin Configuration Package BCV62A BCV62B BCV62C 2 = C1 2 = C1 2 = C1

General Description. Smart Low Side Power Switch HITFET BTS 141TC. Features Logic Level Input Input Protection (ESD) =Thermal shutdown with latch

Data Sheet, Rev. 4.0, April 2008 TLE6250. High Speed CAN-Transceiver. Automotive Power

General Description. Smart Low Side Power Switch HITFET BTS 141

General Description. Smart Low Side Power Switch HITFET BTS 117

BAV BAV Total power dissipation T S 35 C. t = 1 s. t = 1 µs. P tot 250 mw

Type Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323

single single single yellow S HH H Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R

IDP45E60. Fast Switching Diode. Product Summary V RRM 600 V I F 45 A V F 1.5 V T jmax 175 C. Features 600V Emitter Controlled technology

2 nd Generation thinq! TM SiC Schottky Diode

2 nd Generation thinq! TM SiC Schottky Diode

Product Summary V RRM 600 V I F 23 A V F 1.5 V T jmax 175 C 600V diode technology

With this INFINEON Technologies Information Note we would like to inform you about the following

3 rd Generation thinq! TM SiC Schottky Diode

single single single yellow S HH H Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R

SGP30N60HS SGW30N60HS

3 rd Generation thinq! TM SiC Schottky Diode

I C. A Pulsed collector current, t p limited by T jmax I Cpuls 40 Turn off safe operating area V CE 600V, T j 150 C - 40.

TLE Data Sheet. Automotive Power. Low Dropout Linear Fixed Voltage Regulator TLE42754D TLE42754G TLE42754E. Rev. 1.

I C. A Pulsed collector current, t p limited by T jmax I Cpuls 62 Turn off safe operating area V CE 600V, T j 150 C - 62.

BAT64-04W. ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Configuration L S (nh) Marking

SiC. Silicon Carbide Diode. 650V SiC Schottky Diode IDW24G65C5B. Rev. 2.0,

Type Marking Pin Configuration Package BCX42 DKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO

BCP51...-BCP53... Type Marking Pin Configuration Package BCP51 BCP51-16 BCP52-16 BCP53-10 BCP SOT223 SOT223 SOT223 SOT223 SOT223

Type Marking Pin Configuration Package BFN24 BFN26 1=B 1=B

Type Marking Pin Configuration Package BFR93A R2s 1=B 2=E 3=C SOT23

SiC. Silicon Carbide Diode. 650V SiC Schottky Diode IDW 1 0 G 6 5 C 5. Rev. 2.0 < >

SGB02N120. Fast IGBT in NPT-technology. Power Semiconductors 1 Rev. 2_3 Jan 07

I C P tot 138 W

single, leadless single Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R

Type Package Configuration Marking BAS28 BAS28W

2 nd Generation thinq! TM SiC Schottky Diode

Type Marking Pin Configuration Package BCM846S 1Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

2 nd Generation thinq! TM SiC Schottky Diode

IDP30E120. Fast Switching Diode. Product Summary V RRM 1200 V I F 30 A V F 1.65 V T jmax 150 C

Power Management & Multimarket

Power Management & Multimarket

Type Marking Pin Configuration Package SMBT2222A/MMBT2222A s1p 1 = B 2 = E 3 = C SOT23

BCR320U / BCR321U. LED Driver

Type Marking Pin Configuration Package BFR183 RHs 1=B 2=E 3=C SOT23

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Overvoltage- Protection

Power Management & Multimarket

BDP947_BDP949_BDP953. Silicon NPN Transistors. For AF driver and output stages High collector current High current gain

Type Marking Pin Configuration Package BCM856S 3Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

single common cathode common cathode

SiC. Silicon Carbide Diode. 650V SiC Schottky Diode IDW40G65C5B. Rev. 2.0,

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

Power Management & Multimarket

I C. A Pulsed collector current, t p limited by T jmax I Cpuls 3.5 Turn off safe operating area V CE 1200V, T j 150 C - 3.

Type Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323

SiC. Silicon Carbide Diode. 1200V SiC Schottky Diode IDW 1 0 S Rev. 2.0,< >

BCR420U / BCR421U. LED Driver

Type Marking Pin Configuration Package BCW66KF BCW66KG BCW66KH 1=B 1=B 1=B

BFS483. Low Noise Silicon Bipolar RF Transistor

OptiMOS -P2 Power-Transistor

Switching Inductive Loads with TLE724xSL

SiC. 2nd Generation thinq! Data Sheet. Industrial & Multimarket. Silicon Carbide Diode. 2nd Generation thinq! SiC Schottky Diode IDV05S60C

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Overvoltage- Protection

Type Marking Pin Configuration Package BFR182W RGs 1=B 2=E 3=C SOT323

OptiMOS TM -T2 Power-Transistor

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Overvoltage- Protection

Type Marking Pin Configuration Package BCP68-25 * 1=B 2=C 3=E 4=C - - SOT223

SiC. 2nd Generation thinq! Data Sheet. Industrial & Multimarket. Silicon Carbide Diode. 2nd Generation thinq! SiC Schottky Diode IDY10S120

Soft Switching Series

Type Marking Pin Configuration Package BSP60 BSP61 BSP62 2=C 2=C 2=C 3=E 3=E 3=E

SIPMOS Small-Signal-Transistor

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

OptiMOS -T2 Power-Transistor

Silicon Carbide Schottky Diode IDH05G120C5. 5 th Generation thinq! 1200 V SiC Schottky Diode. Rev

OptiMOS TM P3 Power-Transistor

60 30 Pulsed collector current, t p limited by T jmax I Cpuls 90 Turn off safe operating area V CE 900V, T j 175 C - 90 Diode forward current

N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions. Drain1. Source1. Drain2.

Transcription:

Low Drop Voltage Regulator TLE 4296 Features Three versions: 3.0 V, 3.3 V, 5.0 V Output voltage tolerance ±4% Very low drop voltage Output current: 30 ma Inhibit input Low quiescent current consumption Wide operation range: up to 45 V Wide temperature range: -40 C T j 150 C Output protected against short circuit Overtemperature protection Reverse polarity proof Very small SMD-Package PG-SCT595-5 Green product (RoHS compliant) AEC qualified PG-SCT595-5 Functional Description The TLE 4296 G is a monolithic integrated low drop voltage regulator in the very small SMD package PG-SCT595-5. It is designed to supply e.g. microprocessor systems under the severe conditions of automotive applications. Therefore the device is equipped with additional protection functions against overload, short circuit and reverse polarity. At overtemperature the regulator is automatically turned off by the integrated thermal protection circuit. nput voltages up to 40 V are regulated to V Q,nom = 3.0 V (V30 version) 3.3 V (V33 version) or 5.0 V (V50 version). The output is able to drive a load of more than 30 ma while it regulates the output voltage within a 4% accuracy. To save energy the device can be switched in stand-by mode via an inhibit input which causes the current consumption to drop below 5 µa. Type Package Marking TLE 4296 GV30 PG-SCT595-5 C3 TLE 4296 GV33 PG-SCT595-5 C2 TLE 4296 GV50 PG-SCT595-5 C1 Data Sheet 1 Rev. 1.1, 2008-04-21

INH 1 5 GND GND 2 Ι 3 4 Q AEP02253 Figure 1 Pin Configuration (top view) Table 1 Pin Definitions and Functions Pin No. Symbol Function 1 INH Inhibit input; high level to turn IC on 2 GND Ground; connected to pin 5 3 I Input voltage 4 Q Output voltage; must be blocked by a capacitor C Q 2.2 µf, 3 Ω ESR 10 Ω 5 GND Ground; connected to pin 2 Data Sheet 2 Rev. 1.1, 2008-04-21

Temperature Control Saturation Control and Protection Circuit Ι 3 4 Q Band-Gap- Referenz + 1 INH 2,5 GND AEB02312 Figure 2 Block Diagram Data Sheet 3 Rev. 1.1, 2008-04-21

Table 2 Absolute Maximum Ratings -40 C < T j < 150 C Parameter Symbol Limit Values Unit Remarks Min. Max. Input Voltage V I -42 45 V Current I I ma internally limited Output Voltage V Q -6 30 V Current I Q ma internally limited Inhibit Voltage V INH -42 45 V Current I INH -500 * µa * internally limited Current I INH -5 5 ma -0.3 V < V I < 45 V; t p < 1 ms Temperatures Junction temperature T j -40 150 C Storage temperature T stg -50 150 C Thermal Resistances Junction pin R thj-pin 30 K/W measured to pin 5 Junction ambient 1) R thja 179 K/W zero airflow zero heat sink area 1) Worst case regarding peak temperature. Note: Maximum ratings are absolute ratings; exceeding any one of these values may cause irreversible damage to the integrated circuit. Data Sheet 4 Rev. 1.1, 2008-04-21

Table 3 Operating Range Parameter Symbol Limit Values Unit Remarks Min. Max. Input voltage V I 4.0 45 V TLE 4296 GV30 4.0 45 V TLE 4296 GV33 5.5 45 V TLE 4296 GV50 Inhibit voltage V INH -0.3 40 V Junction temperature T j -40 150 C Data Sheet 5 Rev. 1.1, 2008-04-21

Table 4 Electrical Characteristics V I = 13.5 V; V INH > +2.5 V; -40 C < T j < 150 C; unless otherwise specified Parameter Symbol Limit Values Unit Test Condition Min. Typ. Max. Output voltage V30 version Output voltage V30 version Output voltage V33 version Output voltage V33 version V Q 2.88 3.0 3.12 V 1 ma < I Q < 30 ma V I = 13.5 V V Q 2.88 3.0 3.12 V I Q = 10 ma 4 V < V I < 40 V V Q 3.17 3.30 3.43 V 1 ma < I Q < 30 ma V I = 13.5 V V Q 3.17 3.30 3.43 V I Q = 10 ma 4.3 V < V I < 40 V Output voltage V50 version Output voltage V50 version V Q 4.80 5.00 5.20 V 1 ma < I Q < 30 ma V I = 13.5 V V Q 4.80 5.00 5.20 V I Q = 10 ma 6 V < V I < 40 V Output current limitation I Q 30 ma Drop voltage V dr 0.25 0.30 V I Q = 20 ma 1) Output capacitor C Q 2.2 µf 3 Ω ESR 10 Ω at 100 khz Current consumption I q 2 4.5 ma I Q < 30 ma I q = I I - I Q Current consumption I q 110 170 µa I Q < 1 ma; I q = I I - I Q T j < 85 C 1) Quiescent current (stand-by) I q = I I - I Q Quiescent current (stand-by) I q = I I - I Q I q 0 1 µa V INH = 0.4 V; T j < 85 C I q 0 5 µa V INH = 0.4 V Load regulation V Q 10 20 mv 1 ma < I Q < 25 ma; T j = 25 C Line regulation V Q 5 20 mv V I = (V Q,nom + 0.5 V) to 36 V I Q = 5 ma; T j = 25 C Data Sheet 6 Rev. 1.1, 2008-04-21

Table 4 Electrical Characteristics (cont d) V I = 13.5 V; V INH > +2.5 V; -40 C < T j < 150 C; unless otherwise specified Parameter Symbol Limit Values Unit Test Condition Power-Supply-Ripple- Rejection Logic Inhibit Input Min. Typ. Max. PSRR 60 db f r = 100 Hz; V r = 0.5 Vpp Inhibit, Turn-on voltage V INH, high 2.2 V V Q > 0.95 V Q,nom Inhibit, Turn-off voltage V INH, low 0.4 V V Q > 0.1 V H-input current I INH, high 8 12 µa V INH = 5 V L-input current I INH, low -2 2 µa V INH = 0 V 1) Measured when the output voltage V Q has dropped 100 mv from the nominal value. Data Sheet 7 Rev. 1.1, 2008-04-21

Typical Performance Characteristics Output Voltage V Q versus Input Voltage V I Current Consumption I q versus Input Voltage V I 10 AED03348.VSD 1000 AED03347.VSD V Q V V INH = 5 V R L = 1 kω I q µa V INH = 5 V 8 800 6 GV50 600 4 GV33 400 R L = 1 kω GV30 2 200 R L = 5 kω 0 0 2 4 6 8 V 10 0 0 10 20 30 40 V 50 V I V I Data Sheet 8 Rev. 1.1, 2008-04-21

V Q,nom + 0.5 V to 45 V Ι 3 4 Q 3.0V / 3.3V / 5.0V C Ι 100 nf TLE 4296 G C Q 2.2 µf Inhibit INH 1 2,5 GND R Q 3.3 Ω AES02313 Figure 3 Application Circuit Application Information In the TLE 4296 G the output voltage is divided and compared to an internal reference of 2.5 V typical. The regulation loop controls the output to achieve a stabilized output voltage. Figure 3 shows a typical application circuit. In order to maintain the stability of the control loop the TLE 4296 G output requires an output capacitor C Q of at least 2.2 µf with an ESR of max. 10 Ω and min. 3 Ω. It is recommended to use tantalum (e.g. the EPCOS 3.3 µf / 16V B45196P3335M209 or 4.7 µf / 10 V B45196-P2475M109) or a multi layer ceramic capacitor with a series resistor in order to cover these limits over the full operating temperature range of -40 C to 150 C. At the input of the regulator an input capacitor is necessary for compensating line influences (100 nf ceramic capacitor recommended). A resistor of approx. 1 Ω in series with C I, can damp any oscillation occurring due the input inductivity and the input capacitor. Data Sheet 9 Rev. 1.1, 2008-04-21

Package Outlines O 2.9 ±0.2 (2.2) B +0.1 1.2-0.05 (0.4) 1) (1.45) (0.3) 1.1 MAX. 0.1 MAX. (0.13) (0.23) 1) 1 3 +0.1 0.3-0.05 +0.1 0.6-0.05 0.95 5 2 4 2.5±0.1 0.25±0.1 10 MAX. 10 MAX. +0.1 0.15-0.06 ±0.1 1.6 A 0.2 M A 0.25 M 1.9 B 1) Contour of slot depends on profile of gull-wing lead form GPW05997 Figure 4 Outline PG-SCT595-5 Green Product (RoHS compliant) To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). You can find all of our packages, sorts of packing and others in our Infineon Internet Page Products : http://www.infineon.com/packages. SMD = Surface Mounted Device Dimensions in mm Data Sheet 10 Rev. 1.1, 2008-04-21

Revision History Version Date Changes Rev. 1.1 2008-04-21 Initial version of RoHS-compliant derivate of TLE 4296. Page 1: AEC certified statement added. Page 1 and Page 10: RoHS compliance statement and Green product feature added. Page 1 and Page 10: Package changed to RoHS compliant version. Page 1: Marking information added. Legal Disclaimer updated Rev. 1.0 2004-01-01 Final datasheet Data Sheet 11 Rev. 1.1, 2008-04-21

Edition 2008-04-21 Published by Infineon Technologies AG 81726 Munich, Germany 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.