TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPC7-H TPC7-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due to a small and thin package High-speed switching Small gate charge: Q SW = 5. nc (typ.) Low drain-source ON-resistance: R DS (ON) = 7. mω (typ.) High forward transfer admittance: Y fs = S (typ.) Low leakage current: I DSS = μa (max) (V DS = V) Enhancement mode: V th =.5 to.5 V (V DS = V, I D = ma) Absolute Maximum Ratings () Characteristic Symbol Rating Unit Drain-source voltage V DSS V Drain-gate voltage (R GS = kω) V DGR V Gate-source voltage V GSS ± V Drain current DC (Note ) I D A Pulsed (Note ) I DP Drain power dissipation (t = s) (Note a) P D.9 W Drain power dissipation (t = s) (Note b) P D. W Single-pulse avalanche energy (Note ) E AS 9 mj Avalanche current I AR A Repetitive avalanche energy (Note a) (Note ) E AR. mj Channel temperature T ch 5 C Storage temperature range T stg 55 to 5 C JEDEC JEITA TOSHIBA -JB Weight:.5 g (typ.) Circuit Configuration 7 5 Note: For Notes to, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions / Derating Concept and Methods ) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. -7-
TPC7-H Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to ambient (t = s) (Note a) Thermal resistance, channel to ambient (t = s) (Note b) R th (ch-a) 5. C/W R th (ch-a) 5 C/W Marking (Note 5) TPC7 H Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free finish. Note : Ensure that the channel temperature does not exceed 5 C. Note : (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR- 5. 5.. (Unit: mm) FR- 5. 5.. (Unit: mm) (a) (b) Note : V DD = V, T ch = 5 C (initial), L = 5 μh, R G = 5 Ω, I AR = A Note : Repetitive rating: pulse width limited by maximum channel temperature Note 5: on lower left of the marking indicates Pin. * Weekly code: (Three digits) Week of manufacture ( for the first week of the year, continuing up to 5 or 5) Year of manufacture (The last digit of the year) -7-
TPC7-H Electrical Characteristics () Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ± V, V DS = V ± na Drain cutoff current I DSS V DS = V, V GS = V μa Drain-source breakdown voltage V (BR) DSS I D = ma, V GS = V V (BR) DSX I D = ma, V GS = V 5 V Gate threshold voltage V th V DS = V, I D = ma.5.5 V Drain-source ON-resistance R DS (ON) V GS =.5 V, I D = A 9.9.9 V GS = V, I D = A 7.. mω Forward transfer admittance Y fs V DS = V, I D = A S Input capacitance C iss 5 Reverse transfer capacitance C rss V DS = V, V GS = V, f = MHz 5 pf Output capacitance C oss Gate resistance Rg V DS = V, V GS = V, f = 5 MHz..5 Ω Switching time Rise time t r V V I D = A GS V Turn-on time t V OUT on Fall time t f.9 Turn-off time t off.7 Ω Duty %, t w = μs RL =.5Ω V DD 5 V ns Total gate charge (gate-source plus gate-drain) Q g V DD V, V GS = V, I D = A V DD V, V GS = 5 V, I D = A Gate-source charge Q gs. Gate-drain ( Miller ) charge Q gd V DD V, V GS = V, I D = A.7 Gate switch charge Q SW 5. nc Source-Drain Ratings and Characteristics () Characteristic Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note ) I DRP A Forward voltage (diode) V DSF I DR = A, V GS = V. V -7-
TPC7-H 5 I D V DS.5..5.. 5...5 I D V DS.5.... VGS =.9V.... VGS =.9V.... VDS = V I D V GS Ta = 55 C 5 Drain-source voltage VDS (V)..... V DS V GS Ta = 5 ID = A 5 Gate-source voltage V GS (V) Gate-source voltage V GS (V) Forward transfer admittance Yfs (S) VDS = V Ta = 55 C Y fs I D.. 5 Drain-source ON-resistance RDS (ON) (mω) R DS (ON) I D VGS =.5 V V Ta = 5.. Drain current I D (A) Drain current I D (A) -7-
TPC7-H Drain-source ON-resistance RDS (ON) (mω) VGS =.5 V R DS (ON) Ta VGS = V ID =,, A ID =,, A Ambient temperature Ta ( C) Drain reverse current IDR (A).. I DR V DS.5 VGS = V..... Capacitance V DS V th Ta Capacitance C (pf). VGS = V f = MHz Ciss Coss Crss Gate threshold voltage Vth (V).5.5.5 VDS = V ID = ma Ambient temperature Ta ( C) Drain power dissipation PD (W).... () () P D Ta ()Device mounted on a glass-epoxy board(a) (Note a) ()Device mounted on a glass-epoxy board(b) (Note b) t=s Drain-source voltage VDS (V) 5 ID = A VDS = V Dynamic input/output characteristics VGS VDD = V Gate-source voltage VGS (V) Ambient temperature Ta ( C) 5 5 5 Total gate charge Q g (nc) 5-7-
TPC7-H r th t w Transient thermal impedance rth ( C/W) () Device mounted on a glass-epoxy board (a) (Note a) () () Device mounted on a glass-epoxy board (b) (Note b) () Single - pulse..... Pulse width t w (s) Safe operating area ID max (Pulse) * ms * t =ms * * Single-pulse Ta = 5 Curves must be derated linearly with increase in temperature.. VDSS max. -7-
TPC7-H RESTRICTIONS ON PRODUCT USE 77-EN GENERAL The information contained herein is subject to change without notice. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).these TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer s own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7-7-