TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPC84 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Unit: mm Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 3. mω (typ.) High forward transfer admittance: Yfs = 47 S (typ.) Low leakage current: IDSS = µa (max) (VDS = 3 V) Enhancement mode: Vth =.8 to 2. V (VDS = V, ID = ma) Absolute Maximum Ratings () Characteristics Symbol Rating Unit Drain-source voltage V DSS 3 V Drain-gate voltage (R GS = 2 kω) V DGR 3 V Gate-source voltage V GSS ±2 V Drain current DC (Note ) I D 8 A Pulse (Note ) I DP 72 JEDEC JEITA TOSHIBA 2-6JB Weight:.8 g (typ.) Drain power dissipation (t = s) (Note 2a) Drain power dissipation (t = s) (Note 2b) Single pulse avalanche energy (Note 3) P D.9 W P D. W E AS 2 mj Circuit Configuration 8 7 6 5 Avalanche current I AR 8 A Repetitive avalanche energy (Note 2a) (Note 4) E AR.9 mj Channel temperature T ch 5 C Storage temperature range T stg 55 to 5 C 2 3 4 Note: (Note ), (Note 2), (Note 3) and (Note 4): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ( Handling Precautions /Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Please handle with caution. 26--5
Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to ambient (t = s) (Note 2a) Thermal resistance, channel to ambient (t = s) (Note 2b) R th (ch-a) 65.8 C/W R th (ch-a) 25 C/W Marking (Note 5) TPC84 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Note : Ensure that the channel temperature does not exceed 5 C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 25.4.8 (Unit: mm) FR-4 25.4 25.4.8 (Unit: mm) (a) (b) Note 3: V DD = 24 V, T ch = 25 C (initial), L =5µH, R G = 25 Ω, I AR = 8 A Note 4: Repetitive rating; pulse width limited by maximum channel temperature Note 5: on lower left of the marking indicates Pin. Weekly code: (Three digits) Week of manufacture ( for the first week of a year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year) 2 26--5
Electrical Characteristics () Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±6 V, V DS = V ± µa Drain cut-off current I DSS V DS = 3 V, V GS = V µa Drain-source breakdown voltage V (BR) DSS I D = ma, V GS = V 3 V V (BR) DSX I D = ma, V GS = 2 V 5 Gate threshold voltage V th V DS = V, I D = ma.8 2. V Drain-source ON resistance R DS (ON) V GS = 4 V, I D = 9 A 5.2 6.8 mω V GS = V, I D = 9 A 3. 4.5 Forward transfer admittance Y fs V DS = V, I D = 9 A 23.5 47 S Input capacitance C iss 748 Reverse transfer capacitance C rss V DS = V, V GS = V, f = MHz 32 pf Output capacitance C oss 46 Switching time Rise time t r V 25 V I GS D = 9 A V V OUT Turn-ON time t on 36 Fall time t f 235 V DD 5 V Turn-OFF time t off Duty < = %, t w = µs 625 4.7 Ω RL =.7 Ω ns Total gate charge Q (gate-source plus gate-drain) g 8 V DD 24 V, V GS = V, Gate-source charge Q gs I D = 8 A Gate-drain ( miller ) charge Q gd 6 nc Source-Drain Ratings and Characteristics () Characteristics Symbol Test Condition Min Typ. Max Unit Drain reverse current Pulse (Note ) I DRP 72 A Forward voltage (diode) V DSF I DR = 8 A, V GS = V.2 V 3 26--5
2 6 2 8 4 4 I D V DS 2.8 3 2.6 8 2.4 2.2 5 4 3 2 4 3 2.8 8 I D V DS 2.6 2.4 2.2 VGS = 2 V VGS = 2 V.2.4.6.8. 2 3 4 5 5 4 3 2 25 I D V GS VDS = V Drain-source voltage VDS (V).5.4.3.2. V DS V GS 4.5 9 ID = 8 A Ta = 55 C 2 3 4 5 4 8 2 6 2 Gate-source voltage V GS (V) Gate-source voltage V GS (V) Y fs I D R DS (ON) I D Forward transfer admittance Yfs (S) Ta = 55 C VDS = V.. 25 Drain-source ON resistance RDS (ON) (mω) VGS = 4 V.. Drain current I D (A) Drain current I D (A) 4 26--5
Drain-source ON resistance RDS (ON) (mω) 2 5 5 VGS = 4 V R DS (ON) Ta ID = 8 A, 9 A, 4.5 A ID = 8 A, 9 A, 4.5 A V 8 4 4 8 2 6 Drain reverse current IDR (A). 5 3 I DR V DS VGS = V.2.4.6.8..2 Ambient temperature Ta ( C) Capacitance C (pf) Capacitance V DS Ciss Coss Crss VGS = V f = MHz. Gate threshold voltage Vth (V) 2..6.2.8.4 V th Ta 8 4 4 8 2 6 Ambient temperature Ta ( C) VDS = V ID = ma Drain power dissipation PD (W) 2..6.2.8.4 () (2) P D Ta () Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = s Drain-source voltage VDS (V) Dynamic input/output characteristics 3 VDD = 24 V ID = 3 A VDS 2 2 2 VDD = 24 V VGS 3 2 Gate-source voltage VGS (V) 4 8 2 6 2 4 8 2 6 2 24 Ambient temperature Ta ( C) Total gate charge Q g (nc) 5 26--5
Normalized transient thermal impedance rth ( C/W) () Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) r th t w t = s () (2) Single pulse.... Pulse width t w (S) Safe operating area ID max (pulse) * ms* ms*. * Single pulse Curves must be derated linearly with increase in. temperature. VDSS max.. 6 26--5
RESTRICTIONS ON PRODUCT USE The information contained herein is subject to change without notice. 369EAA The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 7 26--5