Date: 13 th Mar 13 Data Sheet Issue: 1 Absolute Maximum Ratings Thyristor/Diode Modules MC#65 V RRM V DRM [V] 4 65-4io7 65-4io7 65-4io7 65-4io7 VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage 1) 4 V V DSM Non-repetitive peak off-state voltage 1) 5 V V RRM Repetitive peak reverse voltage 1) 4 V V RSM Non-repetitive peak reverse voltage 1) 5 V UNITS OTHER RATINGS MAXIMUM LIMITS I T(AV)M Maximum average on-state current, T C = 85 C ) 646 A I T(AV)M Maximum average on-state current. T C = 1 C ) 444 A I T(RMS)M Nominal RMS on-state current, T C = 55 C ) 154 A I T(d.c.) D.C. on-state current, T C = 55 C 117 A I TSM Peak non-repetitive surge t p = 1 ms, V RM = 6%V RRM 3).1 ka I TSM Peak non-repetitive surge t p = 1 ms, V RM 1V 3) 4.5 ka UNITS I t I t capacity for fusing t p = 1 ms, V RM = 6%V RRM 3).44 1 3 ka s I t I t capacity for fusing t p = 1 ms, V RM 1 V 3) 3. 1 3 ka s (di/dt) cr Critical rate of rise of on-state current (repetitive) 4) A/µs Critical rate of rise of on-state current (non-repetitive) 4) 4 A/µs V RGM Peak reverse gate voltage 5 V P G(AV) Mean forward gate power 4 W P GM Peak forward gate power 4 W V ISOL Isolation Voltage 5) 3 V T vj op Operating temperature range -4 - +15 C T stg Storage temperature range -4 - +13 C Notes: 1) De-rating factor of.13% per C is applicable for T vj below 5 C. ) Single phase; 5 Hz, 18 half-sinewave. 3) Half-sinewave, 15 C T vj initial. 4) V D = 67% V DRM, I FG = A, t r.5µs, T C = 15 C. 5) AC RMS voltage, 5 Hz, 1min test Rating Report. Type Page 1 of 1 March 13
Thyristor/Diode Module Type Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS 1) UNITS V TM Maximum peak on-state voltage - - 1. I TM = 65A, T vj = T vjmax V V TM Maximum peak on-state voltage - - 1.3 I TM = 195A, T vj = T vjmax V V T Threshold voltage - -.874 V r T Slope resistance - -.7 mω (dv/dt) cr Critical rate of rise of off-state voltage 1 - - V D =.67% V DRM, Gate o/c V/µs I DRM Peak off-state current - - 15 Rated V DRM ma I RRM Peak reverse current - - 15 Rated V RRM ma V GT Gate trigger voltage - -.5 V T vj = 5 C, V D = 1 V, I T = 3 A I GT Gate trigger current - - 5 ma V GD Gate non-trigger voltage.5 - - 67% V DRM V I H Holding current - - 3 V D = 1 V, T vj = 5 C ma t gd Gate controlled turn-on delay time -.5 - I FG = A, t r =.5 µs, V D = 4%V DRM, µs t gt Turn-on time - 3.5 - I TM = 8A, di/dt = 1 A/µs, T vj = 5 C µs Q rr Recovered Charge - - 3 µc Q ra Recovered Charge, 5% chord - - 95 I TM = 74A, di/dt = 1A/µs, µc I rm Reverse recovery current - - 19 V R = 1 V A t rr Reverse recovery time, 5% chord - - 31 µs t q Turn-off time - - 3 R thjc R thch Thermal resistance, junction to case Thermal resistance, case to heatsink I TM = 8 A, di/dt = 1 A/µs, V R = 1 V, V DR = 67%V DRM, dv DR /dt = 5 V/µs - -.5 Single Thyristor K/W - -.5 Whole Module K/W - -.16 Single Thyristor K/W - -.8 Whole Module K/W F 1 Mounting force (to heatsink) - 9. Nm F Mounting force (to terminals) - 18. W t Weight - 3.5 - kg Notes: 1) Unless otherwise indicated T vj =15 C. ) Screws must be lubricated. ) µs Nm Rating Report. Type Page of 1 March 13
Thyristor/Diode Module Type Notes on Ratings and Characteristics 1. Voltage Grade Table V Voltage Grade DRM V RRM V DSM V RSM V D V R V V DC V 4 4 5 18. Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production. 3. De-rating Factor A blocking voltage de-rating factor of.13%/ C is applicable to this device for T vj below 5 C. 4. Repetitive dv/dt Standard dv/dt is 1V/µs. 5. Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 6. Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 4A/µs at any time during turnon on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network. 7. Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 3V is assumed. This gate drive must be applied when using the full di/dt capability of the device. I GM 4A/µs I G t p1 The magnitude of I GM should be between five and ten times I GT, which is shown on page. Its duration (t p1 ) should be µs or sufficient to allow the anode current to reach ten times I L, whichever is greater. Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The back-porch current I G should remain flowing for the same duration as the anode current and have a magnitude in the order of 1.5 times I GT. Rating Report. Type Page 3 of 1 March 13
Thyristor/Diode Module Type 8. Computer Modelling Parameters 8.1 Thyristor Dissipation Calculations I VT + VT + 4 AV = ff ff r T r T W AV and: W AV T = R T = T th j max T K Where V T =.874 V, r T =.7 mω. R th = Supplementary thermal impedance, see table below and ff = Form factor, see table below. Supplementary Thermal Impedance Conduction Angle 3 6 9 1 18 7 d.c. Square wave.595.561.547.537.55.511.5 Sine wave.536.57.5.518.5 Form Factors Conduction Angle 3 6 9 1 18 7 d.c. Square wave 3.464.449 1.73 1.414 1.149 1 Sine wave 3.98.778. 1.879 1.57 8. Calculating thyristor V T using ABCD Coefficients The on-state characteristic I T vs. V T, on page 6 is represented by a set of constants A, B, C, D, forming the coefficients of the representative equation for V T in terms of I T given below: V T = A + B ln ( IT ) + C IT + D IT The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The resulting values for V T agree with the true device characteristic over a current range, which is limited to that plotted. 5 C Coefficients 15 C Coefficients A 8.437E-1 A 6.7785E-1 B 5.84385E- B.9488E- C 1.49934E-4 C 1.81444E-4 D -.39483E-3 D 1.43319E-3 Rating Report. Type Page 4 of 1 March 13
Thyristor/Diode Module Type 8.3 D.C. Thermal Impedance Calculation p = n rt = rp p= 1 Where p = 1 to n and: n = number of terms in the series t = Duration of heating pulse in seconds r t = Thermal resistance at time t r p = Amplitude of p th term τ p = Time Constant of r th term 1 e t τ p The coefficients for this device are shown in the table below: D.C. Term 1 3 4 5 6 r p.56.9643.348.971.1719.4399 τ p 8.474 1.11.89.459.954.414 9. Reverse recovery ratings (i) Q ra is based on 5% I RM chord as shown in Fig. 1 Fig. 1 (ii) Q rr is based on a 15 µs integration time i.e. (iii) K Factor = t t 1 Q rr = 15µ s i rr. dt Rating Report. Type Page 5 of 1 March 13
Thyristor/Diode Module Type Curves Figure 1 On-state characteristics of Limit device 1 T j = 5 C T j = 15 C Instantaneous On-state current - I TM (A) 1 1..5 1. 1.5..5 Instantaneous On-state voltage - V TM (V) Figure Gate characteristics Trigger limits 7 T j =5 C Figure 3 Gate characteristics Power curves 14 T j =5 C 6 1 Max V G dc Max V G dc 5 1 Gate Trigger Voltage - V GT (V) 4 3 I GT, V GT Gate Trigger Voltage - V GT (V) 8 6 P G Max 4W dc 4 15 C 5 C -4 C P G 4W dc 1 I GD, V GD Min V G dc Min V G dc..4.6.8 1 Gate Trigger Current - I GT (A) 4 6 8 1 1 14 Gate Trigger Current - I GT (A) Rating Report. Type Page 6 of 1 March 13
Thyristor/Diode Module Type Figure 4 Recovered charge, Q rr 1 T j =15 C Figure 5 Recovered charge, Q ra (5% Chord) 1 T j =15 C A 148A Recovered charge - Q rr (µc) 1 A 148A 74A Recovered charge - Q ra, 5% chord (µc) 74A 1 1 1 1 1 di/dt (A/µs) 1 1 1 1 1 di/dt (A/µs) Figure 6 Reverse recovery current, I rm 1 T j =15 C A 148A 74A Figure 7 Reverse recovery time, t rr 1 T j =15 C Reverse recovery current - I rm (A) 1 Reverse recovery time (5% chord) - t rr (µs) A 148A 74A 1 1 1 1 1 1 1 1 1 1 di/dt (A/µs) di/dt (A/µs) Rating Report. Type Page 7 of 1 March 13
Thyristor/Diode Module Type Figure 8 On-state current vs. Power dissipation Sine wave 5 Figure 9 On-state current vs. case temperature Sine wave 14 3 6 9 1 18 1 Maximum forward dissipation (W) 15 1 Maximum permissable case temperature ( C) 1 8 6 4 5 3 6 9 1 18 4 6 8 Mean forward current (A) (Whole cycle averaged) Figure 1 On-state current vs. Power dissipation Square wave 5 4 6 8 Mean forward current (A) (Whole cycle averaged) Figure 11 On-state current vs. case temperature Square wave 14 1 Maximum forward dissipation (W) 15 1 d.c. 7 18 1 9 6 3 Maximum permissible case temperature ( C) 1 8 6 4 3 6 9 1 18 7 d.c. 5 4 6 8 1 Mean Forward Current (A) (Whole Cycle Averaged) 4 6 8 1 Mean Forward Current (A) (Whole Cycle Averaged) Rating Report. Type Page 8 of 1 March 13
Thyristor/Diode Module Type Figure 1 Maximum surge and I t Ratings 1 Gate may temporarily lose control of conduction angle 1.E+8 I t: V RRM 1V Total peak half sine surge current (A) 1 1 I t: 6% V RRM I TSM : V RRM 1V I TSM : 6% V RRM 1.E+7 1.E+6 Maximum I t (A s) T j (initial) = 15 C 1 1 3 5 1 1 5 1 5 1 Duration of surge (ms) Duration of surge (cycles @ 5Hz) 1.E+5 Figure 13 Transient thermal impedance 1.E-1 Single Thyristor 1.E- Thermal impedance (K/W) 1.E-3 1.E-4.1.1.1.1 1 1 1 Time (s) Rating Report. Type Page 9 of 1 March 13
Thyristor/Diode Module Type Outline Drawing & Ordering Information 15A14 ORDERING INFORMATION (Please quote 11 digit code as below) M C# 65 io 7 Fixed Type Code Configuration code CC, CD or DC Fixed Type Code Typical order code: MCC65-4io7 MCC configuration, 4V V RRM Voltage code V RRM /1 4 i = Critical dv/dt 1 V/µs o = Typical turn-off time Fixed Version Code IXYS Semiconductor GmbH Edisonstraße 15 D-6863 Lampertheim Tel: +49 66 53- Fax: +49 66 53-67 E-mail: marcom@ixys.de IXYS Corporation 159 Buckeye Drive Milpitas CA 9535 7418 USA Tel: +1 (48) 547 9 Fax: +1 (48) 496 67 E-mail: sales@ixys.net IXYS www.ixys.com IXYS UK Westcode Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 ()149 44454 Fax: +44 ()149 659448 E-mail: sales@ixysuk.com IXYS Long Beach, Inc 5 Mira Mar Ave, Long Beach CA 9815 Tel: +1 (56) 96 6584 Fax: +1 (56) 96 6585 E-mail: service@ixyslongbeach.com www.ixysuk.com The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS Semiconductors GmbH. In the interest of product improvement, IXYS reserves the right to change specifications at any time without prior notice. IXYS Semiconductor GmbH. Rating Report. Type Page 1 of 1 March 13