PNP Silicon Double Transistor To be used as a current mirror Good thermal coupling and V BE matching High current gain Low collector-emitter saturation voltage 1 2 Pb-free (RoHS compliant) package Qualified according AEC Q11 C1 (2) C2 (1) Tr.1 Tr.2 E1 () E2 () EHA1 Type Marking Pin Configuration Package BCV62A BCV62B BCV62C Js Ks Ls 1 = C2 1 = C2 1 = C2 2 = C1 2 = C1 2 = C1 = E1 = E1 = E1 = E2 = E2 = E2 SOT1 SOT1 SOT1 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO V (transistor T1) Collector-base voltage (open emitter) V CBO (transistor T1) Emitter-base voltage V EBS 6 DC collector current I C 1 ma Peak collector current I CM 2 Base peak current (transistor T1) I BM 2 Total power dissipation, T S = 99 C P tot mw Junction temperature T j 1 C Storage temperature T stg -6... 1 Thermal Resistance Junction - soldering point 1) R thjs 17 K/W 1 For calculation of RthJA please refer to Application Note AN77 (Thermal Resistance Calculation) 1
Electrical Characteristics at T A = 2 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics of T1 Collector-emitter breakdown voltage V (BR)CEO - - V I C = 1 ma, I B = Collector-base breakdown voltage V (BR)CBO - - I C = 1 µa, I E = Emitter-base breakdown voltage V (BR)EBO 6 - - I E = 1 µa, I C = Collector cutoff current I CBO - - 1 na V CB = V, I E = Collector cutoff current I CBO - - µa V CB = V, I E =, T A = 1 C DC current gain 1) I C =.1 ma, V CE = V h FE 1 - - - DC current gain 1) I C = 2 ma, V CE = V BCV62A BCV62B BCV62C Collector-emitter saturation voltage1) I C = 1 ma, I B =. ma I C = 1 ma, I B = ma Base-emitter saturation voltage 1) I C = 1 ma, I B =. ma I C = 1 ma, I B = ma Base-emitter voltage 1) I C = 2 ma, V CE = V I C = 1 ma, V CE = V 1) Pulse test: t µs, D = 2% h FE V CEsat V BEsat V BE(ON) 12 22 2 18 29 2 22 7 8 mv - 7-2 6-7 - - 8-6 6 7 - - 82 2
Electrical Characteristics at T A = 2 C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. DC Characteristics Base-emitter forward voltage I E = 1 µa I E = 2 ma Matching of transistor T1 and transistor T2 at I E2 =.ma and V CE1 = V T A = 2 C T A = 1 C V BES. - - - I C1 / I C2 - -.7 -.7 - V - 1.8 - - 1. 1. Thermal coupling of transistor T1 and transistor T2 1) T1: V CE = V I E2 - - ma Maximum current of thermal stability of I C1 AC characteristics of transistor T1 Transition frequency I C = 1 ma, V CE = V, f = 1 MHz Collector-base capacitance V CB = 1 V, f = 1 MHz Emitter-base capacitance V EB =. V, f = 1 MHz Noise figure I C = 2 µa, V CE = V, R S = 2 kω, f = 1 khz, f = 2 Hz Short-circuit input impedance I C = 1 ma, V CE = 1 V, f = 1 khz Open-circuit reverse voltage transf.ratio I C = 1 ma, V CE = 1 V, f = 1 khz Short-circuit forward current transf.ratio I C = 1 ma, V CE = 1 V, f = 1 khz Open-circuit output admittance I C = 1 ma, V CE = 1 V, f = 1 khz f T - 2 - MHz C cb - 1. - pf C eb - 8 - F - 2 - db h 11e -. - kω h 12e - 2-1 - h 21e 1-9 - h 22e - - µs 1) Witout emitter resistor. Device mounted on alumina 1mm x 16.mm x.7mm
Test circuit for current matching A Ι C1 2 1 V CE1... T1 T2 Ι E2 = constant V CO V CO EHN Note: Voltage drop at contacts: V CO < 2/ V T = 16mV Characteristic for determination of V CE1 at specified R E range with I E2 as parameter under condition of I C1 /I E2 = 1. A Ι C1 2 1 V CE1... T1 T2 Ι E2 = constant R E R E Note: BCV62 with emitter resistors EHN
Collector-base capacitance C cb = ƒ(v CB ) Emitter-base capacitance C eb = ƒ(v EB ) Total power dissipation P tot = f(t S ) pf 12 1 mw CCB(CEB) 9 8 7 Ptot 2 2 6 CEB 1 1 2 1 CCB 8 12 16 V 22 V CB (V EB ) 1 6 7 9 1 12 C 1 T S Permissible pulse load P totmax / P totdc = f (t p ) P P tot max tot DC 1 BCV 62 t p = D T t p T EHP91 1 2 1 1 D =..1.2..1.2. 1 1-6 1-1 - 1-1 -2 s 1 t p
Package SOT1 BCV62 Package Outline.2 +.1.8 -. 2.9 ±.1 1.9 1.7 1 2 B +.1. -..2 M B 2. ±.1.1 MIN. 1 MAX....8.2 M A 1±.1.1 MAX. 1 MAX..8...1 1. ±.1 A Foot Print.8 1.2.8 1.2.8.8.9 1.1.9 Marking Layout (Example) RF s 6 Manufacturer 2, June Date code (YM) Pin 1 BFP181 Type code Standard Packing Reel ø18 mm =. Pieces/Reel Reel ø mm = 1. Pieces/Reel.2 2.6 8 Pin 1.1 1.1 6
Edition 29-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 29 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (<www.infineon.com>). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7