Low Noise Silicon Bipolar RF Transistor For low distortion amplifiers and oscillators up to GHz at collector currents from 5 ma to 30 ma 3 Pbfree (RoHS compliant) and halogenfree package with visible leads Qualification report according to AECQ available ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR93AW Rs =B =E 3=C SOT33 Maximum Ratings at T A = 5 C, unless otherwise specified Parameter Symbol Value Unit Collectoremitter voltage V CEO V Collectoremitter voltage V CES 0 Collectorbase voltage V CBO 0 Emitterbase voltage V EBO Collector current I C 90 ma Base current I B 9 Total power dissipation ) T S 8 C P tot 300 mw Junction temperature T J 50 C Ambient temperature T A 65... 50 Storage temperature T Stg 65... 50 Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs 40 K/W T S is measured on the collector lead at the soldering point to the pcb For calculation of R thjs please refer to Application Note AN077 (Thermal Resistance Calculation) 040404
Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage V (BR)CEO V I C = ma, I B = 0 Collectoremitter cutoff current I CES 0 µa V CE = 0 V, V BE = 0 Collectorbase cutoff current I CBO 0 na V CB = V, I E = 0 Emitterbase cutoff current I EBO µa V EB = V, I C = 0 DC current gain I C = 30 ma, V CE = 8 V, pulse measured h FE 70 0 40 040404
Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. AC Characteristics (verified by random sampling) Transition frequency I C = 30 ma, V CE = 8 V, f = 500 MHz f T 4.5 6 GHz Collectorbase capacitance V CB = V, f = MHz, V BE = 0, emitter grounded Collector emitter capacitance V CE = V, f = MHz, V BE = 0, base grounded Emitterbase capacitance V EB = 0.5 V, f = MHz, V CB = 0, collector grounded C cb 0.58 0.8 pf C ce 0.3 C eb.9 Minimum noise figure NF min db I C = 5 ma, V CE = 8 V, Z S = Z Sopt, f = 900 MHz.5 f =.8 GHz.6 Power gain, maximum available ) G ma I C = 30 ma, V CE = 8 V, Z S = Z Sopt, Z L = Z Lopt, f = 900 MHz 5.5 f =.8 GHz.5 Transducer gain S e db I C = 30 ma, V CE = 8 V, Z S = Z L = 50 Ω, f = 900 MHz 3 f =.8 MHz 7.5 Third order intercept point at output ) I C = 30 ma, V CE = 8 V, Z S = Z L = 50 Ω, f = 0.9 GHz db Compression point I C = 30 ma, V CE = 8 V, Z S = Z L = 50 Ω, f = 0.9 GHz IP 3 5 dbm P db 6 G ma = S e / S e (k(k²) / ) IP3 value depends on termination of all intermodulation frequency components. Termination used for this measurement is 50Ω from 0. MHz to GHz 3 040404
Total power dissipation P tot = ƒ(t S ) Permissible Pulse Load R thjs = ƒ(t p ) 350 3 mw K/W Ptot 50 00 RthJS 50 0 50 0.5 0. 0. 0.05 0.0 0.0 0.005 D = 0 0 0 5 30 45 60 75 90 5 0 C 50 T S 0 7 6 5 4 3 s 0 t p Permissible Pulse Load P totmax /P totdc = ƒ(t p ) Ptotmax/PtotDC D = 0 0.005 0.0 0.0 0.05 0. 0. 0.5 0 7 6 5 4 3 s 0 t p 4 040404
Package SOT33 BFR93AW 5 040404
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