AN829. PolarPAK Thermal Impedance (Rth) vs. Heat Sink Assembly Clamping Torque. Vishay Siliconix. By Kandarp Pandya

Similar documents
Technical Notes. Introduction. PCB (printed circuit board) Design. Issue 1 January 2010

Thermal Characterization of Packaged RFIC, Modeled vs. Measured Junction to Ambient Thermal Resistance

IRGB30B60KPbF IRGS30B60KPbF IRGSL30B60KPbF

Automotive N- and P-Channel 100 V (D-S) 175 C MOSFET

New Functions. Test mode and Specimen failure. Power cycle test system with thermal analysis capability using structure function.

Battery Disconnect Switch

MIL-STD-750D METHOD THERMAL RESISTANCE MEASUREMENTS OF GaAs MOSFET's (CONSTANT CURRENT FORWARD-BIASED GATE VOLTAGE METHOD)

IRGB30B60K IRGS30B60K IRGSL30B60K

Automotive N- and P-Channel 40 V (D-S) 175 C MOSFET

c. VH: Heating voltage between the collector and emitter.

CHAPTER 6 THERMAL DESIGN CONSIDERATIONS. page. Introduction 6-2. Thermal resistance 6-2. Junction temperature 6-2. Factors affecting R th(j-a) 6-2

AN An Analysis for Power Dissipation of LDO Application with High Power. Hawk Chen. Thermal topology of LDO: Introduction:

EVERLIGHT ELECTRONICS CO.,LTD. Technical Data Sheet High Power LED 1W

IRGB8B60KPbF IRGS8B60KPbF IRGSL8B60KPbF C

Bay Linear. 1.0Amp Low Dropout Voltage Regulator B1117

Design Guidelines for SFT Chipsets Assembly

Super Bright LEDs, Inc.

IRGB4B60K IRGS4B60K IRGSL4B60K

N-Channel 30-V (D-S) MOSFET With Sense Terminal

N-Channel 20 V (D-S) MOSFET

IRGIB15B60KD1P INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings

P-Channel Enhancement Mode Mosfet

N- and P-Channel 30 V (D-S) MOSFET

P-Channel 20 V (D-S) MOSFET

MIL-STD-883E METHOD THERMAL CHARACTERISTICS

20MT120UF "FULL-BRIDGE" IGBT MTP. UltraFast NPT IGBT V CES = 1200V I C = 40A T C = 25 C. 5/ I27124 rev. D 02/03. Features.

P-Channel Enhancement Mode Mosfet

N-Channel 60 V (D-S) MOSFET

AO4802 Dual N-Channel Enhancement Mode Field Effect Transistor

Double Thyristor Module For Phase Control MT A2

LM34 Precision Fahrenheit Temperature Sensors

UNISONIC TECHNOLOGIES CO., LTD LM78XX

Absolute Maximum Ratings Parameter Max. Units

Parameter Max. Units V CES Collector-to-Emitter Breakdown Voltage 600 I T C = 25 C Continuous Collector Current

50MT060ULS V CES = 600V I C = 100A, T C = 25 C. I27123 rev. C 02/03. Features. Benefits. Absolute Maximum Ratings Parameters Max Units.

UNISONIC TECHNOLOGIES CO., LTD

± 20 Transient Gate-to-Emitter Voltage

SC125MS. Data Sheet and Instruction Manual. ! Warning! Salem Controls Inc. Stepper Motor Driver. Last Updated 12/14/2004

250 P C = 25 C Power Dissipation 160 P C = 100 C Power Dissipation Linear Derating Factor

IRGR3B60KD2PbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE. n-channel. Absolute Maximum Ratings Parameter Max.

IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF

Automotive N-Channel 80 V (D-S) 175 C MOSFET

Samples. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 90 C 55 A I T(AV) Average on-state current T C

EHP-A07/UB01-P01. Technical Data Sheet High Power LED 1W

Application Note Thermal Design for the AWB, AWM and AWT series of Power Amplifier Modules Rev 0

Automotive N-Channel 80 V (D-S) 175 C MOSFET

Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection

Wir schaffen Wissen heute für morgen

AO7401 P-Channel Enhancement Mode Field Effect Transistor

N-Channel 30 V (D-S) MOSFET

AO4607, AO4607L(Lead-Free) Complementary Enhancement Mode Field Effect Transistor

Symbol Parameter Max. Units I TC = 25 C Continuous Drain Current, V 10V I DM Pulsed Drain Current

IRGB4056DPbF. n-channel Lead Free Package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

AO3411 P-Channel Enhancement Mode Field Effect Transistor

15ETL06PbF 15ETL06FPPbF

LM35 Precision Centigrade Temperature Sensors

Complementary (N- and P-Channel) MOSFET

n-channel Solar Inverter Induction Heating G C E Gate Collector Emitter

8ETU04 8ETU04S 8ETU04-1

AUTOMOTIVE GRADE. A I DM Pulsed Drain Current P A = 25 C Maximum Power Dissipation 2.0 P A = 70 C Maximum Power Dissipation 1.

N-CHANNEL MOSFET 1 D2 P-CHANNEL MOSFET. Top View SO-8

N-Channel 150 V (D-S) MOSFET

A Guide to Board Layout for Best Thermal Resistance for Exposed Packages

30 to 35 ma G. Samples. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 80 C 20 A I T(AV)

CID Insulated Gate Bipolar Transistor with Silicon Carbide Schottky Diode Zero Recovery Rectifier

T C MEASURED POINT G1 E1 E2 G2 W - (4 PLACES) G2 E2 E1 G1

Teccor brand Thyristors 65 / 70 Amp Standard SCRs

n-channel Standard Pack Orderable part number Form Quantity IRG7PH35UD1MPbF TO-247AD Tube 25 IRG7PH35UD1MPbF

Half Bridge IGBT MTP (Ultrafast NPT IGBT), 80 A

Data Sheet. ADJD-xMxx. High Power Light Strip, Ring & Round. Description. Features. Applications. Specifications

Lednium Series Optimal X OVTL09LG3x Series

Memory Thermal Management 101

L K K K K P P1 N GU EU GV EV GW EW GU GVGW GB E LABEL H H

Understanding Integrated Circuit Package Power Capabilities

Heatsink for WMHP Series High Power Resistors

-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel

0.016 W/ C to +150 C

TECHNICAL INFORMATION

P-Channel 20 V (D-S) MOSFET

NTE74HC299 Integrated Circuit TTL High Speed CMOS, 8 Bit Universal Shift Register with 3 State Output

Microsemi Power Modules. Reliability tests for Automotive application

PPM3T60V2 P-Channel MOSFET

YB Pin Microprocessor Reset Monitor

MODEL NAME : LLDMWW0-15K*0*A

IRGP20B60PDPbF SMPS IGBT. n-channel WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE

SPECIFICATIONS (T J = 25 C, unless otherwise noted)

A I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units

Effective Thermal Management of Crystal IS LEDs. Biofouling Control Using UVC LEDs

Boundary Condition Dependency

CM200EXS-24S. Chopper IGBT NX-Series Module 200 Amperes/1200 Volts

Power semiconductor devices

IRGP50B60PDPbF. n-channel SMPS IGBT WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE

EHP-AX08EL/UB01H-P01/B7B8/F3

Very low conduction losses Low forward voltage drop Low thermal resistance High specified avalanche capability High integration ECOPACK 2 compliant

IRG7PA19UPbF. Key Parameters V CE min 360 V V CE(ON) I C = 30A 1.49 V I RP T C = 25 C 300 A T J max 150 C. Features

IRGP4263PbF IRGP4263-EPbF

5.0mm x 5.0mm SURFACE MOUNT LED LAMP. Descriptions. Features. Package Dimensions

430mA -304mA -263mA D 1 G 2 S 1 G 1. Bottom View

CM1000DUC-34SA. Mega Power Dual IGBT 1000 Amperes/1700 Volts

NTE74HC109 Integrated Circuit TTL High Speed CMOS, Dual J K Positive Edge Triggered Flip Flop w/set & Reset

Transcription:

PolarPAK Thermal Impedance (Rth) vs. Heat Sink Assembly Clamping Torque By Kandarp Pandya INTRODUCTION PolarPAK, the innovative power MOSFET package from, provides enhanced thermal performance, especially when used with a heat sink and adequate airflow. This application note, one more in the series of support documents for PolarPAK, studies how the thermal performance of PolarPAK and a heat sink assembly vary with respect to the heat sink clamping torque. The extreme destructive test described in this note examines the mechanical limits of the package to determine the amount of clamping force/pressure it can sustain when the part is physically damaged. Two parameters junction-to-ambient steady-state thermal impedance of the package on a PCB assembly and clamping torque between heat sink and PCB are evaluated. EXPERIMENTAL SETUP The experimental setup comprised of the following material and equipment: (1) Samples of SiE802DF PolarPAK MOSFET (2) Test-printed circuit board, the standard PCB used for MOSFET datasheet characterization, as shown in Figure 1: a. Dimensions: 1 in. x 1 in. x 0.062 in. (25.4 mm x 25.4 mm x 1.575 mm) b. Material: FR4 c. Number of copper layers: 2 d. Copper thickness on both sides: 2 oz. (0.076 mm) e. Area covered by copper on both sides: 100 % (only lead separation isolation on top side as shown in Figure 1) 1" (25.4 mm) Gate Source Drain Figure 1. PC board design (3) Aluminum heat sink measuring 1 in. x 1 in. x 0.18 in. (25.4 mm x 25.4 mm x 0.457 mm) (4) Mechanical test fixture, Figure 2 a. 3-in. industrial C-clamp b. Two clamp insulators prepared from FR-4 fiberglass PCB material without any copper on either side, 0.062 in. (1.575 mm) APAPTER 1 x 1 x 0.18 ALUMINUM HEAT SINK PCB 3 INCH INDUSTRIAL C - CLAMP 1" (25.4 mm) TEXT FIXTURE SET-UP Figure 2. Mechanical text fixture 1

(5) Machined socket adaptor, Figure 3a and 3b (7) Ana-Tech [1] computerized test set for thermal characterization of the MOSFET, Figure 5 Figure 3a. Socket Adaptor Side View Figure 5. Ana-Tech setup Figure 3b. Socket Adaptor Bottom View (6) Calibrated torque screwdriver set, Sturtevant Richmond Model 26/4, Figure 4 Description of test: (1) Part calibration file The Ana-Tech [1] computerized setup produces transient thermal impedance characteristics of the unit under test either a MOSFET or a MOSFET on a PCB assembly. The characteristics consist of a plot of the temperature rise of the MOSFET die per unit watt of power dissipation with respect to the duration of the power pulse. The die temperature is ascertained by measuring the forward voltage drop of the MOSFET's body diode. This necessitates body diode characterization, and in turn a part calibration file that relates the forward voltage drop of the body diode with its temperature. Figure 6 is a plot of the calibration file developed for the Polar- PAK MOSFET sample. Note the negative temperature coefficient of the forward voltage drop of the body diode, V fd, with respect to its junction temperature T j. The green trace represents actual measurements recorded by the computer. The system software further smoothes the data to obtain linear data, represented by the straight blue trace, for the calibration file. Figure 4. Torque screwdriver set 2

Temp ( C) POLARPAK E802 Diode (Vf) Vs Temperature (Gate-To-Drain Short) Calibration 110 100 90 POLARPAK E802(Meas) POLARPAK E802(Calc) 80 70 60 50 40 30 0.35 0.4 0.45 0.5 0.55 Vf (Volts) Figure 6. Calibration Impedance (C/watts) value establishes a baseline defining 66 C/W as the maximum value of junction to ambient thermal resistance of PolarPAK on a standard 1 in. x 1 in. PCB. 70 60 50 40 30 10 POLARPAK QN2E802 MAX C 1" x 1" VS 1" x 1" HEAT SINK WITHOUT HEATSINK Heating Impedance Characteristic (2) PCB assembly: The PolarPAK SiE802DF power MOSFET was assembled on the test PCB, which is the standard printed circuit board used for MOSFET product characterization, as shown in Figure 7. Figure 7. PCB assembly An engineering lab-level soldering procedure developed for the assembly and re-work of the PolarPAK was employed to solder the part onto the PCB. Refer to the application note AN828 [2] "Working with Polar- PAK, In-Lab Soldering and Re-Work Recommendations" for details. (3) Thermal charcterization of part without heat sink Employing the Ana-Tech setup, junction-to-ambient transient thermal impedance characteristics were developed for the PCB assembly without any heat sink, as shown in Figure 8. The steady-state 0 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Duration (sec) Figure 8. Transient thermal impedance characteristics (4) Heat sink and PCB assembly A C-clamp fixture was used to hold the aluminum heat sink and assembled PCB as shown in Figure 2. A thin layer of thermally conducting heat sink compoundwas applied between the heat sink and the top of the PolarPAK surface to establish a good thermal contact between the part and the heat sink. The PCB and heat sink were sandwiched between two clamp insulators that provide thermal insulation and minimize the heat sinking effect from the metal mass of the C-clamp. (5) Clamping and torque adjustment technique Using the torque screwdriver on the C-clamp was a challenge. A machined socket adaptor shown in Figure 3a and 3b was designed and developed inhouse to overcome this challenge and facilitate the use of a calibrated torque screwdriver set. A milled adaptor was snug-fitted on the cylindrical head of the C-clamp handle at the same time "U" grooves on opposite sides gripped the handle bar. See figures 9b and 9c. Figure 9b shows C-clamp head without socket adaptor and figure 9c shows C- clamp with the socket adaptor. The top of the adaptor was machined to accept the hex-head of the torque screwdriver. This converted the radial movement of screwdriver to the circular movement of the C-clamp bar with adequate grip. Figure 9a shows the complete arrangement. 3

STURTEVANT RICHMONT MODEL 36/4 ADJUSTABLE Torque SCREWDRIVER BOTTOM VIEW 1/4 INCH HEX TO 1/4 INCH SQUARE DRIVE Figure 9c. C-clamp head with socket adaptor 1 x 1 x 0.18 ALUMINUM HEAT SINK PCB 3 INCH INDUSTRIAL C - CLAMP POLARPAK TORQUE TEST FIXTURE Figure 9a. Complete clamping and torque setting arrangement Accordingly, tightening the C-clamp with the desired torque setting on the screwdriver until it slipped ensured the correct torque value of the assembly between the part and heat sink. Different torque values used in the experiment are 2, 4, 8, 16, and 32 in.-lb. (6) Thermal characterization Transient thermal impedance characteristics were developed for the part assembly with heat sink using the different clamping torque values listed above. Figure 10 provides a graphical representation of the results. 25 POLARPAK SI802DF MAX C 1" x 1" VS 1" x 1" HEATSINK TORQUE Heating Impedance Characteristic Figure 9b. C-clamp head without socket adaptor Impedance (C/watts) 15 10 5 0 0.0001 0.001 0.01 0.1 1 10 100 1000 10000 Pulse Duration (sec) Delta T = 50 C j POLARPAK Q2NE802 MAX C WHS POLARPAK SI802DF MAX C NT POLARPAK SI802DF MAX C 2IN LBS POLARPAK SI802DF MAX C 4IN LBS POLARPAK SI802DF MAX C 8IN LBS POLARPAK SI802DF MAX C 16IN LBS POLARPAK SI802DF MAX C 32IN LBS Figure 10. Transient thermal characteristics at different torque values 4

RESULTS Table 1 summarizes steady-state values of thermal resistance under various torque conditions. TABLE 1 RESULT SUMMARY Torque (in.-lb.) Steady-State Thermal Heat Sink Resistance ( C/W) 0 66.14 No 0 24.19 Yes 2 24.03 Yes 4 24.01 Yes 8 21.64 Yes 16.58 Yes 32 19.31 Yes LIMITING TORQUE VALUE The MOSFET showed evidence of mechanical damage cracks in the plastic package when it was opened after applying the torque value of 32 in.-lb., as shown in Figure 11a. X-ray examination, figure 11b shows partial crack in the die. Figure 11a. Damaged Part Figure 11b. X-Ray of damaged part The electrical test revealed different resistance values between the gate and two drain terminations. This means the part was also damaged electrically by the test. However, no abnormality was observed on the body diode, which would have hampered the thermal characterization test itself. Torque value recommendations: Steady-state thermal resistance value at the highest level of torque, 32 in.-lb., was 19.31 C/W, and torque a step lower at 16 in.-lb. was.58 C/W. That means doubling the torque value lowers the thermal impedance but damages the package. Determining the optimum torque value that does not damage the part may be a lengthy exercise without much advantage, hence 16 in.-lb. is the recommended safe torque value. Furthermore, we know for sure that the latter value has a 50 % guard band. SUMMARY 66 C/W is the junction to ambient, steady-state thermal resistance value for the part on a standard 1 in. x 1 in. PCB. Using a heat sink on top of the part with thermal glue without any extra torque brings down the thermal impedance value to 24.49 C/W, a significant reduction from 66 C/W. Increasing the amount of thermal glue thickness didn't show any noticeable improvements in the thermal resistance value. Increasing the mounting/clamping torque brings down the thermal impedance value by 16 %. The no-torque value of 24.49 C/W drops to.58 C/W with a torque value of 16 in.-lb. 16 in.-lb. is the recommended maximum torque value for the PolarPAK package. At 32 in.-lb. the part experiences mechanical and electrical damage. Hence, the thermal resistance value of 19.31 C/W at 32 in.-lb. of torque is not of much practical use. Acknowledgements: The author wishes to acknowledge Dwight Kraus for his contribution in this experiment, particularly in designing, developing, and manufacturing the adaptor for interfacing the C-clamp and torque screwdriver. References: [1] Ana-Tech Thermal characterization setup - visit Analysis Tech web site for details www.analysistech.com [2] AN828 "Working with PolarPAK, In-Lab Soldering and Re-Work Recommendations)" web-site www.vishay.com 5