Package Lead Code Identification SINGLE 3 SERIES 3 UNCONNECTED PAIR RING QUAD

Similar documents
Package Lead Code Identification SINGLE 3 SERIES 3 UNCONNECTED PAIR RING QUAD

Surface Mount RF Schottky Barrier Diodes. Technical Data. GUx. HSMS-281x Series

Surface Mount RF Schottky Barrier Diodes. Technical Data. HSMS-280x Series

BAS19LT1, BAS20LT1, BAS21LT1, BAS21DW5T1. High Voltage Switching Diode HIGH VOLTAGE SWITCHING DIODE. Pb Free Packages are Available.

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

LMBZ52xxBLG Series. 225 mw SOT 23 Surface Mount LESHAN RADIO COMPANY, LTD. 1/6

DATA SHEET. BAT54W series Schottky barrier (double) diodes DISCRETE SEMICONDUCTORS Mar 19. Product specification Supersedes data of October 1993

Applications Automotive Exterior Lighting Electronic Signs and Signals

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

BAS19LT1G, BAS20LT1G, BAS21LT1G, BAS21DW5T1G. High Voltage Switching Diode HIGH VOLTAGE SWITCHING DIODE

BAT64-04W. ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Package Configuration L S (nh) Marking

MOC205-M MOC206-M MOC207-M MOC208-M

BAT54XV2 Schottky Barrier Diode

MOC8111 MOC8112 MOC8113

MOCD223M Dual-channel Phototransistor Small Outline Surface Mount Optocouplers

DISCRETE SEMICONDUCTORS DATA SHEET M3D071. BAT74 Schottky barrier double diode. Product specification Supersedes data of 1996 Mar 19.

H11AV1-M H11AV1A-M H11AV2-M H11AV2A-M

350mW, SMD Switching Diode

SOT-363 Q 1 Q 2 TOP VIEW. Characteristic Symbol Value Unit I D. Characteristic Symbol Value Unit Drain Source Voltage V DSS -20 V

PHOTOVOLTAIC SOLID-STATE RELAY OPTOCOUPLERS

200mA, 30V Schottky Barrier Diode

MMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount

Low VF SMD Schottky Barrier Diode

MMBZ5221BLT1 Series. Zener Voltage Regulators. 225 mw SOT 23 Surface Mount

SOT-563 Q 1 Q 2 BOTTOM VIEW. Characteristic Symbol Value Unit Drain Source Voltage V DSS 20 V Gate-Source Voltage V GSS ±8 V T A = 25 C T A = 85 C

GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS

BSS84 P-Channel Enhancement Mode Field-Effect Transistor

PHOTOTRANSISTOR OPTOCOUPLERS

Features. T A =25 o C unless otherwise noted

2N7002DW N-Channel Enhancement Mode Field Effect Transistor

DISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D302. PMEM4020ND NPN transistor/schottky-diode module. Product data sheet 2003 Nov 10

BAV BAV Total power dissipation T S 35 C. t = 1 s. t = 1 µs. P tot 250 mw

8ETU04 8ETU04S 8ETU04-1

T-1 3/4 (5 mm) Oval Precision Optical Performance LED Lamps. Technical Data

GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS

onlinecomponents.com

MOC8101, MOC8102, MOC8103, MOC8104, MOC8105 Optocoupler, Phototransistor Output, no Base Connection

PHOTOTRANSISTOR OPTOCOUPLERS

DATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28.

30ETH06 30ETH06S 30ETH06-1

PHOTO SCR OPTOCOUPLERS

PHOTODARLINGTON OPTOCOUPLERS

PHOTOTRANSISTOR OPTOCOUPLERS

FFSP0665A/D. Silicon Carbide Schottky Diode 650 V, 6 A Features. FFSP0665A Silicon Carbide Schottky Diode. Description.

FFSH15120A/D. Silicon Carbide Schottky Diode 1200 V, 15 A Features. FFSH15120A Silicon Carbide Schottky Diode. Description.

HIGH SPEED TRANSISTOR OPTOCOUPLERS

BAR64... BAR64-05 BAR64-05W BAR64-04 BAR64-04W BAR64-02LRH BAR64-02V BAR64-03W BAR64-06 BAR64-06W BAR64-07

2 Input NAND Gate L74VHC1G00

Ultra High Ratio Si Hyperabrupt Varactor Diode Rev. V10. RoHS Compliant Part Number Configuration Package Package Cp (pf) Package Ls (nh)

single, leadless single Maximum Ratings at T A = 25 C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage V R

MMBD1201 / MMBD1202 / MMBD1203 / MMBD1204 / MMBD1205 Small Signal Diodes

AO4607, AO4607L(Lead-Free) Complementary Enhancement Mode Field Effect Transistor

NTJD4105C. Small Signal MOSFET. 20 V / 8.0 V, Complementary, A / A, SC 88

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

AC INPUT/PHOTOTRANSISTOR OPTOCOUPLERS

DLA LAND AND MARITIME COLUMBUS, OHIO TITLE MICROCIRCUIT, LINEAR, CMOS SPDT SWITCH, MONOLITHIC SILICON REVISIONS

BAW56 BAW56S BAW56T BAW56U BAW56W

DATA SHEET. PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors DISCRETE SEMICONDUCTORS

LNTA4001NT1G S-LNTA4001NT1G. Small Signal MOSFET 20 V, 238 ma, Single, N-Channel, Gate ESD Protection LESHAN RADIO COMPANY, LTD.

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

single single single 150 C Operating temperature range T op Storage temperature T stg

PHOTODARLINGTON OPTOCOUPLERS (NO BASE CONNECTION)

FFSH40120ADN-F155 Silicon Carbide Schottky Diode

Optocoupler, Phototransistor Output, no Base Connection

GB2X100MPS V SiC MPS Diode

DATA SHEET. BYG90-40 series Schottky barrier rectifier diodes DISCRETE SEMICONDUCTORS May 06

DATA SHEET. BF908WR N-channel dual-gate MOS-FET. Philips Semiconductors DISCRETE SEMICONDUCTORS Apr 25

DATA SHEET. BAV100 to BAV103 General purpose diodes DISCRETE SEMICONDUCTORS Sep 17. Product specification Supersedes data of April 1996

HIGH SPEED TRANSISTOR OPTOCOUPLERS

MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209. Silicon Tuning Diodes pf, 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODES

AO7401 P-Channel Enhancement Mode Field Effect Transistor

MURD620CT. Ultrafast Rectifier. t rr = 25ns I F(AV) = 6Amp V R = 200V. Bulletin PD rev. C 12/03. Features. Package Outline

FFSD08120A/D. Silicon Carbide Schottky Diode 1200 V, 8 A Features. FFSD08120A Silicon Carbide Schottky Diode. Description.

HIGH SPEED-10 MBit/s LOGIC GATE OPTOCOUPLERS

AO3411 P-Channel Enhancement Mode Field Effect Transistor

DISCRETE SEMICONDUCTORS DATA SHEET. BFR106 NPN 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

Small Signal Fast Switching Diode

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

BAT54T/AD/CD/SD/BR Taiwan Semiconductor Small Signal Product 200mW Surface Mount Schottky Barrier Diode

Optocoupler, Phototransistor Output, with Base Connection

PINNING - SOT93 PIN CONFIGURATION SYMBOL. tab

A I DM. W/ C V GS Gate-to-Source Voltage ± 20. Thermal Resistance Symbol Parameter Typ. Max. Units

SGM7SZ00 Small Logic Two-Input NAND Gate

MUR3020WT. Ultrafast Rectifier. t rr = 35ns I F(AV) = 30Amp V R = 200V. Bulletin PD rev. C 05/01. Features. Package Outline

C2D05120A Silicon Carbide Schottky Diode Zero Recovery Rectifier

-202mA. Pin 1 D1. Diode. Part Number Case Packaging DMC21D1UDA-7B X2-DFN ,000/Tape & Reel

Type Package Configuration Marking BAS28 BAS28W

Silicon PIN Photodiode with very short switching time Version 1.3 SFH 229

AO4802 Dual N-Channel Enhancement Mode Field Effect Transistor

GC15MPS V SiC MPS Diode

C2D10120A Silicon Carbide Schottky Diode Zero Recovery Rectifier

MJW18020G. NPN Silicon Power Transistors High Voltage Planar 30 AMPERES 1000 VOLTS BV CES 450 VOLTS BV CEO, 250 WATTS

I F = 10 A, T j = 25 C 1.3 I F = 10 A, T j = 210 C 1.8. V R = 650 V, T j = 25 C 1 5 V R = 650 V, T j = 210 C di F /dt = 200 A/μs

IRLML2030TRPbF HEXFET Power MOSFET

1PMT5920B Series. 3.2 Watt Plastic Surface Mount POWERMITE Package PLASTIC SURFACE MOUNT 3.2 WATT ZENER DIODES VOLTS

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

NC7SB3157 TinyLogic Low Voltage UHS Analog Switch 2-Channel Multiplexer/Demultiplexer (Preliminary)

MM74C00 MM74C02 MM74C04 Quad 2-Input NAND Gate Quad 2-Input NOR Gate Hex Inverter

I F = 1 A, T j = 25 C I F = 1 A, T j = 175 C V R = 650 V, T j = 25 C 1 10 V R = 650 V, T j = 175 C di F /dt = 200 A/μs

Transcription:

Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-28XX Series Features Surface Mount SOT-2/SOT- 4 Package Low Turn-On Voltage (As Low as 4 V at ma) Low FIT (Failure in Time) Rate* Six-sigma Quality Level Single, Dual and Quad Versions Tape and Reel Options Available Package Lead Code Identification SINGLE 2 #0 UNCONNECTED PAIR 4 SERIES 2 #2 RING QUAD 4 TOP VIEW COMMON ANODE 2 # BRIDGE QUAD 4 COMMON CATHODE 2 #4 CROSS-OVER QUAD 4 * For more information see the Surface Mount Schottky Reliability Data Sheet. 2 #5 2 #7 2 #8 2 #9 Description/Applications These Schottky diodes are specifically designed for both analog and digital applications. This series offers a wide range of specifications and package configurations to give the designer wide flexibility. Typical applications of these Schottky diodes are mixing, detecting, switching, sampling, clamping, and wave shaping. The HSMS-2800 series of diodes is optimized for high voltage applications. The HSMS-280 series of diodes features very low flicker (/f) noise. The HSMS-2820 series of diodes is the best all-around choice for most applications, featuring low series resistance, low forward voltage at all current levels and good RF characteristics. The HSMS-2860 series is a high performance diode offering superior V f and ultra-low capacitance. Note that HP s manufacturing techniques assure that dice found in pairs and quads are taken from adjacent sites on the wafer, assuring the highest degree of match.

2 Electrical Specifications T A =, Single Diode [4] Nearest Minimum Maxi- Maximum Maximum Maxi- Typical Part Package Equivalent Break- mum Forward Reverse mum Dynamic Num- Mark- Axial Lead down Forward Voltage Leakage Capac- Resisber ing Lead Part No. Voltage Voltage V F (V) @ I R (na) @ itance tance HSMS [5] Code [] Code Configuration 5082- V BR (V) V F (mv) I F (ma) V R (V) C T (pf) R D (Ω) [6] 2800 A0 0 Single 2800 70 400.0 5 200 50 2.0 5 (N57) 2802 A2 2 Series 280 A Common Anode 2804 A4 4 Common 2805 A5 5 Unconnected 2807 A7 7 Ring Quad [6] 2808 A8 8 Bridge Quad [6] 280 B0 0 Single 280 20 400.0 5 200 5.2 5 (N572) 282 B2 2 Series 28 B Common Anode 284 B4 4 Common 285 B5 5 Unconnected 287 B7 7 Ring Quad [6] 288 B8 8 Bridge Quad [6] 2820 C0 0 Single 285 5* 40 0.7 00.0 2 2822 C2 2 Series 282 C Common Anode 2824 C4 4 Common 2825 C5 5 Unconnected 2827 C7 7 Ring Quad [6] 2828 C8 8 Bridge Quad [6] 2829 C9 9 Cross-over Quad 2860 T0 0 Single None 4 50 0.6 5 0 2862 T 2 Series 286 T Common Anode 2864 T4 4 Common 2865 T5 5 Unconnected Test Conditions I R = 0 µa I F = V F = 0 V I F = 5 ma *I R = ma [] f = 00 µa.0 MHz [2] Notes:. V F for diodes in pairs and quads in 5 mv maximum at ma. 2. C TO for diodes in pairs and quads is 0.2 pf maximum.. Package marking code is in white. 4. Effective Carrier Lifetime (τ) for all these diodes is 00 ps maximum measured with Krakauer method at 5 ma, except HSMS-282X which is measured at 20 ma. 5. See section titled Quad Capacitance. 6. R D = R S + 5.2 Ω at and I f = 5 ma.

Absolute Maximum Ratings [] T A = Symbol Parameter Value I f Forward Current ( ms Pulse) Amp P t Total Device Dissipation 250 mw [2] P IV Peak Inverse Voltage Same as V BR T j Junction Temperature 50 C T stg Storage Temperature -65 to 50 C Notes:. Operation in excess of any one of these conditions may result in permanent damage to this device. 2. CW Power Dissipation at T LEAD =. Derate to zero at maximum rated temperature. Quad Capacitance Capacitance of Schottky diode quads is measured using an HP427 LCR meter. This instrument effectively isolates individual diode branches from the others, allowing accurate capacitance measurement of each branch or each diode. The conditions are: 20 mv R.M.S. voltage at MHz. HP defines this measurement as CM, and it is equivalent to the capacitance of the diode by itself. The equivalent diagonal and adjacent capacitances can then be calculated by the formulas given below. In a quad, the diagonal capacitance is the capacitance between points A and B as shown in the figure below. The diagonal capacitance is calculated using the following formula C x C 2 C x C 4 CDIAGONAL = + C + C 2 C + C 4 C C C C 2 C 4 A B The equivalent adjacent capacitance is the capacitance between points A and C in the figure below. This capacitance is calculated using the following formula C ADJACENT = C + + + C 2 C C 4 This information does not apply to cross-over quad diodes. SPICE Parameters Parameter Units HSMS-280X HSMS-28X HSMS-282X HSMS-286X B V V 75 25 5 7.0 C J0 pf.6. 0.7 0.8 E G ev 0.69 0.69 0.69 0.69 I BV A 0E- 5 0E-5 0E-4 0E-5 I S A x 0E-8 4.8 x 0E-9 2.2 x 0E- 8 5.0 x 0E-8 N.08.08.08.08 R S Ω 0 6.0 5.0 P B V 0.65 0.65 0.65 0.65 P T 2 2 2 2 M 0.5 0.5 0.5 0.5

4 Typical Parameters at T A = (unless otherwise noted), Single Diode 0 0. 5 C 5 C 55 C 0.0 0. 0.2 0.4 0.5 0.6 0.7 0.8 0.9 Figure. Typical Forward Current vs. Forward Voltage at Temperatures HSMS-2800 Series 0 0.2 0.4 0.6 0.8.0.2.4 Figure 2. Typical V f Match, HSMS-2800 Series s and Quads. 0 0 0. 5 C 5 C 55 C 0.0 0. 0.2 0.4 0.5 0.6 0.7 0.8 Figure. Typical Forward Current vs. Forward Voltage at Temperatures HSMS-280 Series. 0 0.4 0.5 0.5 0.6 0.7 Figure 4. Typical V f Match, HSMS-280 Series s and Quads. 0 0 0. 5 C 5 C 55 C 0.0 0. 0.2 0.4 0.5 0.6 0.7 Figure 5. Typical Forward Current vs. Forward Voltage At Temperatures HSMS-2820 Series. 0 0.2 0.4 0.6 0.8.0.2.4 Figure 6. Typical V f Match, HSMS-2820 Series s and Quads at Mixer Bias Levels. 0 I F - FORWARD CURRENT (µa) 00 0 0. 0.0 0.5 0.20 0.25.0 Figure 7. Typical V f Match, HSMS-2820 Series s at Detector Bias Levels. FORWARD CURRENT (ma) 00 0 0. 55 C 0.0 0. 0.2 0.4 0.5 0.6 0.7 0.8 0.9.0 FORWARD VOLTAGE (V) Figure 8. Typical Forward Current vs. Forward Voltage at Temperature, HSMS-2860 Series. I F - FORWARD CURRENT (µa) 00 0.0 0.05 0.0 0.5 0.20 0.25 Figure 9. Typical V f Match, HSMS-2860 Series s at Detector Bias Levels. 0

5 Typical Parameters, continued 00,000 00,000 00,000 I R REVERSE CURRENT (na) 0,000 000 00 0 T A = + T A = +75 C T A = + 0 0 20 40 50 V R REVERSE VOLTAGE (V) Figure 0. Reverse Current vs. Reverse Voltage at Temperatures HSMS-2800 Series. I R REVERSE CURRENT (na) 0,000 000 00 0 T A = + T A = +75 C T A = + 0 5 0 5 V R REVERSE VOLTAGE (V) Figure. Reverse Current vs. Reverse Voltage at Temperatures HSMS-280 Series. I R REVERSE CURRENT (na) 0,000 000 00 0 T A = + T A = +75 C T A = + 0 2 4 6 V R REVERSE VOLTAGE (V) Figure 2. Reverse Current vs. Reverse Voltage at Temperatures HSMS-2820 Series. R D DYNAMIC RESISTANCE (Ω) 000 00 0 HSMS-2800 SERIES HSMS-280 SERIES HSMS-2820 SERIES 0. 0 00 I F FORWARD CURRENT (ma) Figure. Dynamic Resistance vs. Forward Current HSMS-2800 Series. C T CAPACITANCE (pf) 2.5 0.5 0 0 0 20 40 50 V R REVERSE VOLTAGE (V) Figure 4. Total Capacitance vs. Reverse Voltage HSMS-2800 Series. C T CAPACITANCE (pf).25 0.75 0.50 0.25 0 0 2 4 6 8 0 2 4 6 V R REVERSE VOLTAGE (V) Figure 5. Total Capacitance vs. Reverse Voltage HSMS-280 Series. C T CAPACITANCE (pf) 0.8 0.6 0.4 0.2 0 0 2 4 6 8 V R REVERSE VOLTAGE (V) Figure 6. Total Capacitance vs. Reverse Voltage HSMS-2820 Series. Applications Information Schottky Diode Fundamentals See the HSMS-280A series data sheet.

Package Characteristics Lead Material... Alloy 42 Lead Finish... Tin-Lead 85/5% Max. Soldering Temperature... 260 C for 5 sec Min. Lead Strength... 2 pounds pull Typical Package Inductance... 2 nh (opposite leads) Typical Package Capacitance... 0.08 pf (opposite leads) Package Dimensions Outline 2 (SOT-2) Device Orientation USER FEED DIRECTION REEL COVER TAPE CARRIER TAPE.02 (0.040) 0.89 (0.05) PACKAGE MARKING CODE X X 0.54 (0.02) 7 (0.05).40 (0.055).20 (0.047) 2.65 (0.04) 2.0 (0.08) 8 mm TOP VIEW 4 mm END VIEW 2 0.50 (0.024) 0.45 (0.08) 2.04 (0.080).78 (0.070) TOP VIEW Figure 7 Option L for SOT-2 Packages..06 (0.20) 2.80 (0.0) 0.52 (0.006) 0.066 (0.00).02 (0.04) 0.85 (0.0) 0.0 (0.004) 0.0 (0.0005) SIDE VIEW 0.69 (0.027) 0.45 (0.08) END VIEW DIMENSIONS ARE IN MILLIMETERS (INCHES) Outline 4 (SOT-4) 0.92 (0.06) 0.78 (0.0) Figure 8. Option L for SOT-4 Packages. PACKAGE MARKING CODE E XX C B E 0.60 (0.024) 0.45 (0.08) 2.04 (0.080).78 (0.070).06 (0.20) 2.80 (0.0).40 (0.055).20 (0.047) 0.54 (0.02) 7 (0.05).02 (0.04) 0.85 (0.0) 2.65 (0.04) 2.0 (0.08) 0.5 (0.006) 0.09 (0.00) www.hp.com/go/rf For technical assistance or the location of your nearest Hewlett-Packard sales office, distributor or representative call: Americas/Canada: -800-25-02 or 408-654-8675 Far East/Australasia: Call your local HP sales office. Japan: (8 ) 5-852 Europe: Call your local HP sales office. 0.0 (0.004) 0.0 (0.0005) DIMENSIONS ARE IN MILLIMETERS (INCHES) 0.69 (0.027) 0.45 (0.08) Data subject to change. Copyright 998 Hewlett-Packard Co. Obsoletes 5965-889E, 5966-0947E Printed in U.S.A. 5966-4285E (/98)