Description Gen-III 6-65 SiC Schottky Diode UJ3D656KS. CSE United Silicon Carbide, Inc. offers the 3 rd generation of high performance SiC Merged-PiN-Schottky (MPS) diodes. With zero reverse recovery charge and 175 maximum junction temperature, these diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. CSE 1 2 3 1 2 3 Features Typical pplications 175 maximum operating junction temperature Power converters Easy paralleling Industrial motor drives Extremely fast switching not dependent on temperature Switching-mode power supplies No reverse or forward recovery Power factor correction modules Enhanced surge current capability, MPS structure Excellent thermal performance, g sintered 1% UIS tested EC-Q11 qualified Maximum Ratings i 2 t value DC blocking voltage Repetitive peak reverse voltage, T j =25 Soldering temperatures, wavesoldering only allowed at leads Symbol Surge peak reverse voltage 65 Maximum DC forward current T C = 14 3/6 Non-repetitive forward surge current sine halfwave Repetitive forward surge current sine halfwave, D=.1 Non-repetitive peak forward current Power dissipation Maximum junction temperature Operating and storage temperature R RRM RSM I F I FSM Test Conditions alue (Leg/Device) T C = 25, t p = 1ms 165/33 i 2 T C = 25, t p =1ms 136/544 dt T C = 11, t p =1ms 112/448 T C = 25 288.5/577 P Tot T C = 14 67.3/134.6 T J,max 175 T J, T STG -55 to 175 65 65 T C = 11, t p =1ms 15/3 T C = 25, t p = 1ms 17.2/214.4 I FRM T C = 11, t p =1ms 66.1/132.2 I F,max Part Number Package Marking UJ3D656KS TO-247-3L UJ3D656KS T C = 25, t p =1ms 125/25 T C = 11, t p =1ms 125/25 1.6mm from case for T sold 26 1s 2 s W Rev. B, January 218 1 For more information go to www.unitedsic.com.
Forward Current, I F () Forward Current, I F () Electrical Characteristics Gen-III 6-65 SiC Schottky Diode UJ3D656KS. T J = +25 unless otherwise specified Forward voltage Min Typ Max - 1.5 1.7-1.77 2.1-1.85 2.25-3/6 37/74-39/78 Q C R =4 72/144 nc Total capacitance C R =1, f=1mhz R =3, f=1mhz R =6, f=1mhz 99/198 117/234 11/22 pf Capacitance stored energy E C R =4 1.5/21 mj (1) Q c is independent on T j, di F /dt, and I F as shown in the application note USCi_N11. Thermal characteristics Symbol Test Conditions I F = 3/6, T J = 25 I F = 3/6, T J =175 Reverse current I R R =65, T j =25 R =65, T J =175 Total capacitive charge (1) F I F = 3/6, T J =15 alue (Leg/Device) m Thermal resistance alue (Leg/Device) symbol Test Conditions Min Typ Max R qjc.4/.2.52/.26 /W Typical Performance 6 5 4-55 25 1 15 175 16 14 12 1-55 25 1 15 175 3 8 2 1 6 4 2.5 1 1.5 2 2.5 3 Forward oltage, F () 1 2 3 4 5 6 Forward oltage, F () Figure 1 Typical forward characteristics per leg Figure 2 Typical forward characteristics in surge current per leg Rev. B, January 218 2 For more information go to www.unitedsic.com.
Forward Current,I F () Max. Thermal Impedance, Z qjc (/W) Reverse Current, I R () Power Disspiation, P Tot (W) Gen-III 6-65 SiC Schottky Diode UJ3D656KS. 1-3 1.E-3 1-4 1.E-4-55 25 125 175 3 25 2 1-5 1.E-5 15 1 1-6 1.E-6 5 1-7 1.E-7 2 25 3 35 4 45 5 55 6 65 Reverse oltage, R () 25 5 75 1 125 15 175 T C () Figure 3 Typical reverse characteristics per leg Figure 4 Power dissipation per leg 3 25 2 D =.1 D =.3 D =.5 D =.7 D = 1. 1 15 1 5.1 D =.5 D =.3 D =.1 D =.5 D =.2 Single Pulse 25 5 75 1 125 15 175 T C ().1 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 Time, t (s) Figure 5 Diode forward current per leg Figure 6 Maximum transient thermal impedance per leg Rev. B, January 218 3 For more information go to www.unitedsic.com.
E C (mj) Capacitance, C (pf) Q C (nc) Gen-III 6-65 SiC Schottky Diode UJ3D656KS. 14 1 12 1 9 8 7 8 6 6 5 4 4 2 3 2 1 Q C = R C d.1 1 1 1 1 Reverse oltage, R () 1 2 3 4 5 6 7 Reverse oltage, R () Figure 7 Capacitance per leg vs. reverse voltage at 1MHz Figure 8 Typical capacitive charge per leg vs. reverse voltage 3 25 2 15 1 5 1 2 3 4 5 6 7 Reverse oltage, R () Figure 9 Typical capacitance stored energy per leg vs. reverse voltage Rev. B, January 218 4 For more information go to www.unitedsic.com.
Disclaimer Gen-III 6-65 SiC Schottky Diode UJ3D656KS. United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies within. Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc. products and services described herein. Rev. B, January 218 5 For more information go to www.unitedsic.com.