ASMT-QxBD-Axxxx Super 0.5 W Power PLCC-4 Surface Mount LED Indicator. Features. Applications

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SMT-QxBD-xxxx Super 0.5 W Power PL-4 Surface Mount LED Indicator Data Sheet Description The Super 0.5 W Power PL-4 SMT LED is an extension of Power PL-4 SMT LEDs. The package can be driven at high current due to its superior package design. The product is able to dissipate the heat more efficiently compared to the Power PL-4 SMT LEDs. These LEDs produce higher light output with better flux performance compared to the Power PL-4 SMT LED. The Super 0.5 W Power PL-4 SMT LEDs are designed for higher reliability, better performance, and operate under a wide range of environmental conditions. The performance characteristics of these new mid-power LEDs make them uniquely suitable for use in harsh conditions such as in automotive applications, and in electronics signs and signals. To facilitate easy pick and place assembly, the LEDs are packed in EI-compliant tape and reel. Every reel is shipped in single intensity and color bin (except for red), to provide close uniformity. Super 0.5 W Power PL-4 SMT LED is available in red and amber colors. Features Industry Standard PL 4 platform (3.2 mm 2.8 mm 1.9 mm) High reliability package with enhanced silicone resin encapsulation High intensity brightness with optimum flux performance using llngap chip technologies vailable in Red and mber colors High optical efficiency vailable in 8mm carrier tape & 7 inch reel Low Thermal Resistance 60 /W Super wide viewing angle at 120 Longer life time with minimum degradation due to enhanced Silicone resin material JEDE MSL 2 pplications Exterior automotive Turn signals Side repeaters HSML Rear combination lamp Side markers Truck clearance lamp Electronic signs and signals hannel lettering ontour lighting Indoor variable message sign Office automation, home appliances, industrial equipment Front panel backlighting Push button backlighting Display backlighting UTION: SMT-QxBD-xxxx LEDs are lass 2 ESD sensitive. Please observe appropriate precautions during handling and processing. Refer to vago pplication Note N-1142 for additional details.

Package Drawing 2.8 ± 0.2 2.2 ± 0.2 1.9 ± 0.2 0.6 ± 0.3 3.6 ± 0.2 3.2 ± 0.2 0.79 ± 0.3 1.15 ± 0.2 φ 2.4 0.97 1 (TYP.) 0.56 (TYP.) NODE MRKING 0.7 Note: 1. ll Dimensions in millimeters. 2. Lead Polarity as shown in Figure 12. 3. Terminal Finish: g plating 4. Encapsulation material: Silicone resin Figure 1. Package Drawing Table 1. Device Selection Guide olor Part Number Luminous Flux, V [1] (lm) Min. Flux (lm) Typ. Flux (lm) Max. Flux (lm) Test urrent (m) Dice Technology mber SMT-QBD-EF0E 11.5 16.5 19.5 150 lingap mber SMT-QBD-EFJE 11.5-19.5 150 lingap Red Orange SMT-QHBD-EFBE 11.5-19.5 150 lingap Red Orange SMT-QHBD-FH0E 15.0 17.5 33.0 150 lingap Red Orange SMT-QHBD-FG0E 15.0-25.5 150 lingap Red SMT-QRBD-EF0E 11.5 16.5 19.5 150 lingap Notes: 1. V is the total luminous flux output as measured with an integrating sphere at mono pulse condition. 2. Flux tolerance is ±12% Part Numbering System SMT- Q X 1 B D X 2 X 3 X 4 X 5 2 Packaging Option olor Bin Selection Max. Flux Bin Selection Min. Flux Bin Selection olor mber H Red Orange

Table 2. bsolute Maximum Ratings (T = 25 ) Parameters D Forward urrent [1] Peak Forward urrent [2] Power Dissipation Reverse Voltage, V R @ 100 Junction Temperature Operating Temperature Storage Temperature Notes: 1. Derate Linearly as shown in Figure 6. 2. Duty Factor = 10%, Frequency = 1 khz SMT-QxBD-xxxx 150 m 300 m 450 mw 5 V 125-40 to +120-40 to +120 Table 3. Optical haracteristics (T J = 25 ) Peak Wavelength PEK (nm) Dominant Wavelength D [1] (nm) Viewing ngle 2 ½ [2] (Degrees) Luminous Efficiency e (lm/w) olor Part Number Dice Technology Typ. Typ. Typ. Typ. Typ. mber SMT-QBD-xx0E lingap 596.2 593.1 120 44 2.5 Red Orange SMT-QHBD-xx0E lingap 624.1 616.1 120 47 2.5 Red SMT-QRBD-xx0E lingap 629.7 621.1 120 44 2.5 Notes: 1. The dominant wavelength, D, is derived from the IE hromaticity diagram and represents the color of the device. 2. ½ is the off-axis angle where the luminous intensity is ½ the peak intensity. Total Flux / Luminous Intensity V (lm) / I V (cd) Table 4. Electrical haracteristics (T J = 25 ) Part Number Forward Voltage V F (V) @ I F = 150 m Min. Typ. Max. SMT-QBD-xxxE 2.05 2.30 2.95 60 SMT-QHBD-xxxE 2.05 2.50 2.95 60 SMT-QRBD-xxxE 2.05 2.50 2.95 60 Thermal Resistance R J-P ( /W) 3

RELTIVE INTENSITY 1.0 0.9 0.8 0.7 0.6 lingap Red 0.5 lingap mber 0.3 0.2 0.1 0.0 380 430 480 530 580 630 680 730 780 WVELENGTH - nm Figure 2. Relative Intensity Vs. Wavelength FORWRD URRENT - m 300 250 200 150 100 50 0 lingap mber Figure 3. Forward urrent Vs. Forward Voltage. lingap Red 0 1 2 3 4 FORWRD VOLTGE - V RELTIVE LUMINOUS FLUX (NORMLIZED T 150 m) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.2 0.0 0 50 100 150 200 250 300 D FORWRD URRENT - m Figure 4. Relative Intensity Vs. Forward urrent RELTIVE LUMINOUS INTENSITY (NORMLIZED T 25 ) 2.0 1.8 lingap mber 1.6 1.4 lingap Red 1.2 1.0 0.8 0.6 0.2 0.0-50 -25 0 25 50 75 100 JUNTION TEMPERTURE - Figure 5. Relative Intensity Vs. Temperature URRENT - m 160 140 120 100 80 60 40 20 0 Rθ J = 130 /W Rθ J = 110 /W Rθ J = 100 /W 0 20 40 60 80 100 120 140 TEMPERTURE ( ) Figure 6a. Maximum Forward urrent Vs. mbient Temperature. Derated based on T JMX = 125, R J- =130 /W, 110 /W & 100 /W. URRENT - m 160 140 120 100 80 60 40 20 0 Rθ JP = 60 /W 0 20 40 60 80 100 120 140 TEMPERTURE ( ) Figure 6b. Maximum Forward urrent Vs. Solder Point Temperature. Derated based on T JMX = 125, R J-P =60 /W. 4

URRENT - 0 0.30 0.20 0.10 D = t t p p T T I F 0.00 1.00E-05 1.00E-03 1.00E-01 1.00E+01 t p - Time - (S) Figure 7a. Maximum Pulse urrent vs. mbient Temperature. Derated based on T = 25, R J- =110 /W. URRENT - 0 0.30 0.20 0.10 D = t t p p I F T T 0.00 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 1.00E+01 1.00E+02 tp - Time - (S) D = 0.05 0.10 0.25 0.50 1 Figure 7b. Maximum Pulse urrent vs. mbient Temperature. Derated based on T = 85, R J- =110 /W. DOMINNT WVELENGTH - nm 625.0 620.0 615.0 610.0 605.0 600.0 595.0 lingap Red lingap mber FORWRD VOLTGE SHIFT - V 0.3 0.2 0.1 0.0-0.1 lingap Red lingap mber 590.0 0 50 100 150 200 250 300 FORWRD URRENT - m Figure 8. Dominant Wavelength Vs. Forward urrent - lingap Devices. -0.2-50 -25 0 25 50 75 100 T J - JUNTION TEMPERTURE - Figure 9. Forward Voltage Shift Vs. Temperature. NORMLIZED INTENSITY 1 0.9 0.8 0.7 0.6 0.5 0.3 0.2 0.1 0-90 -60-30 0 30 60 90 NGULR DISPLEMENT - DEGREES Figure 10. Radiation Pattern 5

10-30 SE. TEMPERTURE 217 200 150 255-260 3 /SE. MX. 3 /SE. MX. 6 /SE. MX. 60-120 SE. 100 SE. MX. TIME (cc. to J-STD-020) Note: For detail information on reflow soldering of vago surface mount LEDs, do refer to vago pplication Note N 1060 Surface Mounting SMT LED Indicator omponents. Figure 11. Recommended Pb-free Reflow Soldering Profile 2.4 0.6 0.9 X 6 1.3 x 6 NODE MRKING 1.1 4.6 THODE 0.3 NODE SOLDER MSK NODE MRKING MINIMUM 55 mm2 OF NODE PD FOR IMPROVED HET DISSIPTION Figure 12. Recommended Soldering Pad Pattern 6

TRILER OMPONENT LEDER 200 mm MIN. FOR Ø180 REEL. 200 mm MIN. FOR Ø330 REEL. 480 mm MIN. FOR Ø180 REEL. 960 mm MIN. FOR Ø330 REEL. USER FEED DIRETION Figure 13. Tape Leader and Trailer Dimensions Ø1.5 +0.1 0 4 ± 0.1 4 ± 0.1 2 ± 0.05 1.75 ± 0.1 2.29 ± 0.1 3.5 ± 0.05 8 +0.3 0.1 3.8 ± 0.1 3.05 ± 0.1 Ø1 +0.1 0 0.229 ± 0.01 8 LL DIMENSIONS IN mm. Figure 14. Tape Dimensions USER FEED DIRETION THODE SIDE PRINTED LBEL Figure 15. Reeling Orientation 7

Device olor (X 1 ) mber H Red Orange R Red Flux Bin Select (X 2 X 3 ) Individual reel will contain parts from one bin only X 2 Min Flux Bin X 3 Max Flux Bin Flux Bin Limits Bin ID Min. (lm) Max. (lm) 0 3.30 4.30 4.30 5.50 B 5.50 7.00 7.00 9.00 D 9.00 11.50 E 11.50 15.00 F 15.00 19.50 G 19.50 25.50 H 25.50 33.00 J 33.00 43.00 K 43.00 56.00 L 56.00 73.00 Tolerance of each bin limit = ± 12% olor Bin Select (X 4 ) Individual reel will contain parts from one full bin only. X 4 0 Full Distribution 1 and 2 only B 2 and 3 only 3 and 4 only D 4 and 5 only E 5 and 6 only G 1, 2 and 3 only H 2, 3 and 4 only J 3, 4 and 5 only K 4, 5 and 6 only M 1, 2, 3 and 4 only N 2, 3, 4 and 5 only P 3, 4, 5 and 6 only R 1, 2, 3, 4 and 5 only S 2, 3, 4, 5 and 6 only Z Special olor Bin 8

olor Bin Limits mber/yellow Min. (nm) Max. (nm) 2 583.0 586.0 3 586.0 589.0 4 589.0 592.0 5 592.0 595.0 6 595.0 598.0 Red Orange Min. (nm) Max. (nm) 1 611.0 616.0 2 616.0 620.0 3 620.0 625.0 V F Binning Bin Min. Max. 2B 2.05 2.20 2 2.20 2.35 2D 2.35 2.50 2E 2.50 2.65 2F 2.65 2.80 2G 2.80 2.95 Tolerance of each bin = ±0.1 V Packaging Option (X 5 ) Option Test urrent Package Type Reel Size E 150 m Top Mount 7 inch Red Min. (nm) Max. (nm) Full Distribution 620.0 635.0 Tolerance of each bin limit = ±1 nm 9

Precautionary Notes 1. Handling precautions The encapsulation material of the LED is made of silicone for better product reliability. ompared to epoxyencapsulant that is hard and brittle, silicone is softerand flexible. Special handling precautions must be observed during assembly of silicone encapsulated LED products. Failure to comply might lead to damage and premature failure of the LED. Refer to pplication Note N5288, Silicone Encapsulation for LED: dvantages and Handling Precautions for more information. a. Do not poke sharp objects into the silicone encapsulant. Sharp objects, such as tweezers or syringes, might apply excessive force or even pierce through the silicone and induce failures to the LED die or wire bond. b. Do not touch the silicone encapsulant. Uncontrolled force acting on the silicone encapsulant might result in excessive stress on the wire bond. Hold the LED only by the body. c. Do not stack assembled PBs together. Use an appropriate rack to hold the PBs. d. The surface of the silicone material attracts dust and dirt easier than epoxy due to its surface tackiness. To remove foreign particles on the surface of silicone, use a cotton bud with isopropyl alcohol (IP). During cleaning, rub the surface gently without putting much pressure on the silicone. Ultrasonic cleaning is not recommended. e. For automated pick and place, vago has tested the following nozzle size to work with this LED. However, due to the possibility of variations in other parameters, such as pick and place, machine maker/ model, and other settings of the machine, verify that the selected nozzle will not cause damage to the LED. 2. Handling of moisture sensitive device This product has a Moisture Sensitive Level 2 rating per JEDE J-STD-020. Refer to vago pplication Note N5305, Handling of Moisture Sensitive Surface Mount Devices, for additional details and a review of proper handling procedures. a. Before use n unopened moisture barrier bag (MBB) can be stored at <40 /90%RH for 12 months. If the actual shelf life has exceeded 12 months and the humidity indicator card (HI) indicates that baking is not required, then it is safe to reflow the LEDs per the original MSL rating. Do not open the MBB prior to assembly (e.g., for IQ). b. ontrol after opening the MBB Read the HI d immediately upon opening of the MBB. Keep the LEDs at <30 /60%RH at all times. ll high temperature-related processes, including soldering, curing, or rework, must be completed within 1 year. c. ontrol for unfinished reel Store unused LEDs in a sealed MBB with desiccant or desiccator at <5%RH. d. ontrol of assembled boards If the PB soldered with the LEDs will be subjected to other high-temperature processes, the PB must be stored in a sealed MBB with desiccant or desiccator at <5%RH to ensure that all LEDs have not exceeded their floor life of 1 year. e. Baking is required if: The HI indicator is not BROWN at 10% and is ZURE at 5%. The LEDs are exposed to conditions of >30 / 60% RH at any time. The LED floor life exceeded 168 hrs. The recommended baking condition is: 60 ±5º for 20 hrs. Baking should only be done once. f. Storage The soldering terminals of these vago LEDs are silver plated. If the LEDs are exposed in ambient environment for too long, the silver plating might become oxidized, which affects its solderability performance. s such, keep unused LEDs in a sealed MBB with desiccant or in desiccator at <5%RH. 10

3. pplication precautions a. The drive current of the LED must not exceed the maximum allowable limit across temperature as stated in the data sheet. onstant current driving is recommended to ensure consistent performance. b. LEDs exhibit slightly different characteristics at different drive currents, which might result in larger variation in their performance (i.e. intensity, wavelength, and forward voltage). Set the application current as close as possible to the test current to minimize these variations. d. Do not use the LED in the vicinity of material with sulfur content, in environments with high gaseous sulfur compound and corrosive elements. Examples of materials that may contain sulfur are rubber gasket, room temperature vulcanizing (RTV) silicone rubber, rubber gloves etc. Prolonged exposure to suchenvironments may affect the optical characteristics and product life. e. void rapid change in ambient temperature, especially in high-humidity environments, because this causes condensation on the LED. f. lthough the LED is rated as IPx6 according to IE60529: Degree of protection provided by the enclosure, the test condition may not represent actual exposure during application. If the LED is intended to be used in outdoor or harsh environments, protect the LED against damages caused by rain water, dust, oil, corrosive gases, external mechanical stress, etc. 4. Thermal management Optical, electrical, and reliability characteristics of the LED are affected by temperature. The junction temperature(t J ) of the LED must be kept below allowable limits at all times. T J can be calculated as below: T J = T + R J- I F V Fmax where; T = ambient temperature [ ] R J- = thermal resistance from LED junction to ambient [ /W] I F = forward current [] V Fmax = maximum forward voltage [V] The complication of using this formula lies in T and R J-. ctual T is sometimes subjective and hard to determine. R J- varies from system to system depending on the4design and is usually not known. nother way of calculating T J is by using solder point temperature TS as follows: T J = T S + R J-S I F V Fmax where; T S = LED solder point temperature as shown in the following illustration [ ] R J-S = thermal resistance from junction to solder point [ /W] T S can be measured easily by mounting a thermocouple on the soldering joint as shown in the preceding illustration, while R J-S is provided in the data sheet. Verify the T S of the LED in the final product to ensure that the LEDs are operated within all maximum ratings as stated in the data sheet. For product information and a complete list of distributors, please go to our web site: www.avagotech.com vago Technologies and the logo are trademarks of vago Technologies in the United States and other countries. Data subject to change. opyright 2015-2016 vago Technologies. ll rights reserved. V02-1841EN - ugust 19, 2016