TLRE1002A(T02), TLSE1002A(T02), TLOE1002A(T02), TLYE1002A(T02), TLPYE1002A(T02), TLGE1002A(T02), TLFGE1002A(T02), TLPGE1002A(T02)

Similar documents
TLRU1002A(T02), TLSU1002A(T02), TLOU1002A(T02), TLAU1002A(T02),TLYU1002A(T02), TLGU1002A(T02), TLPGU1002A(T02)

TLRK1100C(T11), TLRMK1100C(T11), TLSK1100C(T11), TLOK1100C(T11), TLYK1100C(T11)

TOSHIBA LED lamps TL12W01-L(T30)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K02F

TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SG02FU IN A GND

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK3497

2SC3074 2SC3074. High Current Switching Applications. Maximum Ratings (Ta = 25 C)

TC4013BP,TC4013BF,TC4013BFN

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K17FU

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J16TE. DC I D 100 ma Pulse I DP 200

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ168. DC I D 200 ma Pulse I DP 800

TC74LCX08F,TC74LCX08FN,TC74LCX08FT,TC74LCX08FK

2SC4203 2SC4203. Video Output for High Definition VDT High Speed Switching Applications. Maximum Ratings (Ta = 25 C)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPC6004

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPC8114. DC (Note 1) I D 18 A Pulse (Note 1) I DP 72

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102

TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J117TU. Characteristic Symbol Test Condition Min Typ. Max Unit

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8026

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-mos VI) 2SK4108. JEDEC Repetitive avalanche energy (Note 3) E AR 15 mj

TPCA8107-H 4± ± M A .0±.0± 0.15± ± ± ± ± ± 4.25±0.2 5±0. 3. Maximum Ratings (Ta 25 C)

TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type. (P Channel U MOS IV/N Channel U-MOS III) TPC8405. Rating P Channel N Channel

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3667

TPC8203 TPC8203. Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs. Maximum Ratings (Ta = 25 C) Circuit Configuration

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) TPCA8103

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-speed U-MOSIII) TPCA8011-H

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3567

TC74LCX244F,TC74LCX244FW,TC74LCX244FT,TC74LCX244FK

GT10Q301 GT10Q301. High Power Switching Applications Motor Control Applications. Maximum Ratings (Ta = 25 C) Equivalent Circuit. Marking

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosvi) 2SK3767

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS ) TK15J60U

2SC5748 2SC5748. Horizontal Deflection Output for HDTV&Digital TV. Maximum Ratings (Tc 25 C) Electrical Characteristics (Tc 25 C)

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosiv) 2SK3565

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) TK30A06J3

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) TPC8028

TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U MOSIII) 2SJ668

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅣ) 2SK4013

IS2805 DESCRIPTION FEATURES

TC74VHCT573AF,TC74VHCT573AFW,TC74VHCT573AFT

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L 2 π MOSV) 2SK2385

TPCS8209 查询 TPCS8209 供应商 TPCS8209. Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools. Maximum Ratings (Ta = 25 C)

TPCP8402 TPCP8402. Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C)

MP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C)

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPC8037-H

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS) TK40J60T

TA7262P,TA7262P(LB),TA7262F

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK2996

TC4066BP,TC4066BF,TC4066BFN,TC4066BFT

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosⅦ) TK12A50D

TC74HC148AP,TC74HC148AF

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) 2SK3236

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-mosv) 2SK3538

TC4511BP,TC4511BF TC4511BP/BF. TC4511B BCD-to-Seven Segment Latch/Decoder/Driver. Pin Assignment. Display

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSIII) TPC8017-H

TC74HC373AP,TC74HC373AF,TC74HC373AFW

IS181 DESCRIPTION FEATURES

TC74HC74AP,TC74HC74AF,TC74HC74AFN

TC74HC7292AP,TC74HC7292AF

TOSHIBA Photo IC Silicon Epitaxial Planar TPS859

TOSHIBA Photo-IC Silicon Epitaxial Planar TPS856

TPCF8402 F6B TPCF8402. Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications. Maximum Ratings (Ta = 25 C)

TA78033AS, TA7804AS, TA7805AS, TA7807AS, TA7808AS, TA7809AS

TC74HC4051AP,TC74HC4051AF,TC74HC4051AFT TC74HC4052AP,TC74HC4052AF,TC74HC4052AFT TC74HC4053AP,TC74HC4053AF,TC74HC4053AFN,TC74HC4053AFT

TC74VHC164F,TC74VHC164FN,TC74VHC164FT,TC74VHC164FK

TLP250 TLP250. Transistor Inverter Inverter For Air Conditioner IGBT Gate Drive Power MOS FET Gate Drive. Truth Table

TC74VHC573F,TC74VHC573FW,TC74VHC573FT,TC74VHC573FK

TC74VHC574F,TC74VHC574FW,TC74VHC574FT,TC74VHC574FK

GREEN-RED SMD LED VPSGR5450-VMS. Specification for ViTron LED SMD 5450 [VMS] Revision No. : Ver 1.0. Date : Aug. 7, VISSEM Electronics Co., Ltd.

SMD B EASV1003WA1. Applications Telecommunication: indicator and backlighting in telephone and fax. Flat backlight for LCD, switch and symbol.

SMD 2121 [Full Color]

Technical Data Sheet. Pb Free. Specification GR101 SSC. Customer. Rev. 02 January 서식번호 : SSC- QP (Rev.0.

LITE-ON TECHNOLOGY CORPORATION

SMD 3528 [Full Color]

SMD 3528 [Full Color]

LAMP UTW/S400-X9/T10(WS)

SPECIFICATION WHITE SIDE VIEW LED. Customer. Approved by Approved by Approved by / / / Supplier. Drawn by Checked by Approved by / / /

Display Surface-mount ELSS-406SURWA/S530-A3/S290

TOL-CFcPGKC. Lamp LED. Features. Dimensions. Chip Lens Color. Part Number. TOL-CFcPGKC AlGaInP Pure Green Water clear

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N15FE

1. Automotive : Dashboards, stop lamps, turn signals. 2. Backlighting : LCDs, Key pads advertising. 3. Status indicators : Comsumer & industrial

Specification YGHR411-H

Display Surface-mount ELSS-511UBWA/C470

Specification KWT803-S

3mm Phototransistor PT204-6C

Display Surface-mount ELSS-205SYGWA/S530-E2/S290

CL-L102-C7D. 1. Scope of Application. These specifications apply to LED package, model CL-L102-C7D. 2. Part code

SMD Top View LEDs EAPL4014WA1

Surface Mount UV LED. NUVA33 Series PART NUMBERING SYSTEM. WAVELENGTH CODES Code Nominal Wavelength

SPECIFICATION. Product : Topview 3528 White SMD LED. Proposed By Checked By Checked By Checked By Approval

EVERLIGHT ELECTRONICS CO., LTD.

1. Automotive : Dashboards, stop lamps, turn signals. 2. Backlighting : LCDs, Key pads advertising.

SPECIFICATION. Product : Topview 3528 Green SMD LED. Proposed By Checked By Checked By Checked By Approval

SPECIFICATION. Product : Topview 3528 Blue SMD LED. Proposed By Checked By Checked By Checked By Approval

EAPL4040WA1. SMD Side View LEDs PRELIMINARY. Features. Applications.

LAMP /X1C2-1UWA

LAMP /T2C1-4WYC

Specification LR530. Drawn Approval Approval. Rev. 08 December Document No. : SSC-QP (Rev.00)

EVERLIGHT ELECTRONICS CO., LTD.

EVERLIGHT ELECTRONICS CO.,LTD.

PRELIMINARY SPECIFICATIONS

Automotive: Dashboards, stop lamps, turn signals. 2. Backlighting: LCDs, Key pads advertising.

Transcription:

TL(RE,SE,OE,YE,PYE,GE,FGE,PGE)02A(T02) TOSHIBA LED Lamps TLRE02A(T02), TLSE02A(T02), TLOE02A(T02), TLYE02A(T02), TLPYE02A(T02), TLGE02A(T02), TLFGE02A(T02), TLPGE02A(T02) Panel Circuit Indicator Unit: mm Surface-mount devices 2.0 (L).2 (W). (H) mm InGaAlP LEDs It can be manufactured high-luminosity of equipment or reduce of electric power consumption by change in the high-luminosity LED from general-luminosity one. Colors: red, orange, yellow, pure yellow, green, pure green Pb-free reflow soldering is possible Applications: Backlighting source for battery-powered equipment Pilot light for compact equipment Low-power electronic equipment, etc. Standard embossed tape packing: T02 (000/reel) 8-mm tape reel JEDEC Color and Material Product Name Color Material JEITA TOSHIBA 4-D Weight: 0.002 g TLRE02A TLSE02A TLOE02A TLYE02A TLPYE02A TLGE02A TLFGE02A TLPGE02A Red Red Orange Yellow Pure Yellow Green Green Pure Green InGaAlP 2006-06-

TL(RE,SE,OE,YE,PYE,GE,FGE,PGE)02A(T02) Maximum Ratings () Product Name TLRE02A TLSE02A TLOE02A TLYE02A TLPYE02A TLGE02A TLFGE02A TLPGE02A Forward Current I F (ma) Please see Note Reverse Voltage V R (V) Power Dissipation P D (mw) Operation Temperature T opr ( C) Storage Temperature T stg ( C) 2 4 60 40~8 40~0 Note : Forward current derating 40 I F Ta Allowable forward current IF (ma) 0 20 0 0 20 40 60 80 0 Ambient temperature Ta ( C) Electrical Characteristics () Product Name Forward Voltage V F Reverse Current I R Min Typ. Min I F Max V R TLRE02A.6.9 2.4 TLSE02A.6.9 2.4 TLOE02A.6 2.0 2.4 TLYE02A.6 2.0 2.4 20 0 4 TLPYE02A.6 2.0 2.4 TLGE02A.6 2.0 2.4 TLFGE02A.6 2.0 2.4 TLPGE02A.6 2. 2.4 Unit V ma µa V 2 2006-06-

Optical Characteristics () Product Name Luminous Intensity I V Available Iv rank Min Typ. Max I F Please see Note 2 TLRE02A 27.2 70 20 L / M / N / P TLSE02A 47.6 40 20 M / N / P / Q TLOE02A 47.6 80 20 M / N / P / Q TLYE02A 27.2 20 L / M / N / P TLPYE02A 27.2 70 20 L / M / N / P TLGE02A 27.2 70 20 L / M / N / P TLFGE02A 8. 2 20 J / K / L / M TLPGE02A 4.76 8 20 H / J / K / L Unit mcd mcd mcd ma TL(RE,SE,OE,YE,PYE,GE,FGE,PGE)02A(T02) Note 2: The specification on the above table is used for Iv classification of LEDs in Toshiba facility. Each reel includes the same rank LEDs. Let the delivery ratio of each rank be unquestioned. Rank Luminous Intensity I V Min Max H 4.76 2.9 J 8. 2 K. 4.4 L 27.2 7.6 M 47.6 29 N 8 20 P 44 Q 272 76 Unit mcd mcd Optical Characteristics 2 () Product Name Emission Spectrum Peak Emission λ Dominant Wavelength λ Wavelength λ d p Min Typ. Max Typ. Min Typ. Max TLRE02A 644 8 624 60 68 TLSE02A 62 7 607 6 62 TLOE02A 62 99 60 6 TLYE02A 90 8 87 9 TLPYE02A 8 74 80 86 TLGE02A 74 6 7 76 TLFGE02A 68 9 6 7 TLPGE02A 62 8 64 The cautions Unit nm nm nm ma This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by the IR light. This product is designed as a general display light source usage, and it has applied the measurement standard that matched with the sensitivity of human's eyes. Therefore, it is not intended for usage of functional application (ex. Light source for sensor, optical communication and etc) except general display light source. I F 20 2006-06-

TL(RE,SE,OE,YE,PYE,GE,FGE,PGE)02A(T02) TLRE02A Forward current IF (ma) 0 0 I F V F Luminous intensity IV (mcd) 0 0 0 I V I F.6.7.8.9 2.0 2. 2.2 0 0 0 Forward voltage V F (V) Forward current I F (ma) Relative luminous intensity IV 0. 0. I V Tc Relative luminous intensity.0 0.8 0.6 0.4 0.2 Wavelength characteristic IF = 20 ma 0. 20 0 20 40 60 80 0 Case temperature Tc ( C) 0 80 600 620 640 660 680 700 Wavelength λ (nm) 4 2006-06-

TL(RE,SE,OE,YE,PYE,GE,FGE,PGE)02A(T02) TLSE02A Forward current IF (ma) 0 0 0 I F V F Luminous intensity IV (mcd) 00 0 0 0 I V I F.6.7.8.9 2.0 2. 2.2 0 0 0 Forward voltage V F (V) Forward current I F (ma) Relative luminous intensity IV 0. 0. I V Tc Relative luminous intensity.0 0.8 0.6 0.4 0.2 Wavelength characteristic IF = 20 ma 0. 20 0 20 40 60 80 0 Case temperature Tc ( C) 0 80 600 620 640 660 680 700 Wavelength λ (nm) 2006-06-

TL(RE,SE,OE,YE,PYE,GE,FGE,PGE)02A(T02) TLOE02A Forward current IF (ma) 0 0 0 I F V F Luminous intensity IV (mcd) 00 0 0 0 I V I F.7.8.9 2.0 2. 2.2 2. 0 0 0 Forward voltage V F (V) Forward current I F (ma) Relative luminous intensity IV 0. 0. I V Tc Relative luminous intensity.0 0.8 0.6 0.4 0.2 Wavelength characteristic IF = 20 ma 0. 20 0 20 40 60 80 0 0 40 60 80 600 620 640 660 Case temperature Tc ( C) Wavelength λ (nm) 6 2006-06-

TL(RE,SE,OE,YE,PYE,GE,FGE,PGE)02A(T02) TLYE02A Forward current IF (ma) 0 0 0 I F V F Luminous intensity IV (mcd) 00 0 0 0 I V I F.7.8.9 2.0 2. 2.2 2. 0 0 0 Forward voltage V F (V) Forward current I F (ma) Relative luminous intensity IV 0. 0. I V Tc Relative luminous intensity.0 0.8 0.6 0.4 0.2 Wavelength characteristic IF = 20 ma 0. 20 0 20 40 60 80 0 0 40 60 80 600 620 640 660 Case temperature Tc ( C) Wavelength λ (nm) 7 2006-06-

TL(RE,SE,OE,YE,PYE,GE,FGE,PGE)02A(T02) TLPYE02A Forward current IF (ma) 0 0 0 I F V F Luminous intensity IV (mcd) 00 0 0 0 I V I F.7.8.9 2.0 2. 2.2 2. 0 0 0 Forward voltage V F (V) Forward current I F (ma) Relative luminous intensity IV 0. 0. I V Tc Relative luminous intensity.0 0.8 0.6 0.4 0.2 Wavelength characteristic IF = 20 ma 0. 20 0 20 40 60 80 0 0 40 60 80 600 620 640 660 Case temperature Tc ( C) Wavelength λ (nm) 8 2006-06-

TL(RE,SE,OE,YE,PYE,GE,FGE,PGE)02A(T02) TLGE02A Forward current IF (ma) 0 0 0 I F V F Luminous intensity IV (mcd) 00 0 0 0 I V I F.7.8.9 2.0 2. 2.2 2. 0 0 0 Forward voltage V F (V) Forward current I F (ma) Relative luminous intensity IV 0. 0. I V Tc Relative luminous intensity.0 0.8 0.6 0.4 0.2 Wavelength characteristic IF = 20 ma 0. 20 0 20 40 60 80 0 0 40 60 80 600 620 Case temperature Tc ( C) Wavelength λ (nm) 9 2006-06-

TL(RE,SE,OE,YE,PYE,GE,FGE,PGE)02A(T02) TLFGE02A Forward current IF (ma) 0 0 0 I F V F Luminous intensity IV (mcd) 0 0. I V I F.7.8.9 2.0 2. 2.2 2. 0. 0 0 0 Forward voltage V F (V) Forward current I F (ma) Relative luminous intensity IV 0. 0. I V Tc Relative luminous intensity.0 0.8 0.6 0.4 0.2 IF = 20 ma Wavelength characteristic 0. 20 0 20 40 60 80 0 0 20 40 60 80 600 Case temperature Tc ( C) Wavelength λ (nm) 2006-06-

TL(RE,SE,OE,YE,PYE,GE,FGE,PGE)02A(T02) TLPGE02A Forward current IF (ma) 0 0 0 I F V F Luminous intensity IV (mcd) 0 0. I V I F.7.8.9 2.0 2. 2.2 2. 0. 0 0 0 Forward voltage V F (V) Forward current I F (ma) Relative luminous intensity IV 0. 0. I V Tc Relative luminous intensity.0 0.8 0.6 0.4 0.2 Wavelength characteristic IF = 20 ma 0. 20 0 20 40 60 80 0 0 20 40 60 80 600 Case temperature Tc ( C) Wavelength λ (nm) 2006-06-

TL(RE,SE,OE,YE,PYE,GE,FGE,PGE)02A(T02) Radiation Pattern Vertical to polarity Horizontal to polarity Ta=2 40 0 20 0 20 0 40 40 0 20 0 20 0 40 0 0 0 0 60 60 60 60 70 70 70 70 80 80 80 80 90 0 0.2 0.4 0.6 0.8 90.0 90 0 0.2 0.4 0.6 0.8 90.0 2 2006-06-

TL(RE,SE,OE,YE,PYE,GE,FGE,PGE)02A(T02) Packaging These LED devices are packed in an aluminum envelope with a silica gel and a moisture indicator to avoid moisture absorption. The optical characteristics of the devices may be affected by exposure to moisture in the air before soldering and they should therefore be stored under the following conditions:. This moisture proof bag may be stored unopened within 2 months at the following conditions. Temperature: C~0 C Humidity: 90% (max) 2. After opening the moisture proof bag, the devices should be assembled within 68 hours in an environment of C to 0 C/70% RH or below. When performing lead(pb)-free soldering, the devices should be assembled within 72 hours in an environment of C to 0 C/70% RH or below.. If upon opening, the moisture indicator card shows humidity 0% or above (Color of indication changes to pink) or the expiration date has passed, the devices should be baked in taping with reel. After baking, use the baked devices within 72 hours, but perform baking only once. Baking conditions: 60± C, for 2 to 24 hours. Expiration date: 2 months from sealing date, which is imprinted on the same side as this label affixed. 4. Repeated baking can cause the peeling strength of the taping to change, then leads to trouble in mounting. Furthermore, prevent the devices from being destructed against static electricity for baking of it.. If the packing material of laminate would be broken, the air tightness would deteriorate. Therefore, do not throw or drop the packed devices. Mounting Method Soldering Reflow soldering (example) Temperature profile for Pb soldering (example) Package surface temperature ( C) s max(*) 240 C max (*) 40~60 C max(*) 4 C/s max (*) 4 C/s max(*) 60~20 s max(*) Time (s) The products are evaluated using above reflow soldering conditions. No additional test is performed exceed the condition (i.e. the condition more than (*)MAX values) as a evaluation. Please perform reflow soldering under the above conditions. Please perform the first reflow soldering with reference to the above temperature profile and within 68 h of opening the package. Second reflow soldering In case of second reflow soldering should be performed within 68 h of the first reflow under the above conditions. Storage conditions before the second reflow soldering: 0 C, 70% RH (max) Make any necessary soldering corrections manually. (only once at each soldering point) Soldering iron : 2 W Temperature : 00 C or less Time : within s Do not perform wave soldering. 2006-06-

TL(RE,SE,OE,YE,PYE,GE,FGE,PGE)02A(T02) Reflow soldering (example) Temperature profile for Pb-free soldering (example) s max(*) Package surface temperature ( C) 260 C max(*) 4 C/s max(*) (*) 0~80 C max 20 C 4 C/s max(*) (*) 60~20 s max 0~0 s max(*) Time (s) The products are evaluated using above reflow soldering conditions. No additional test is performed exceed the condition (i.e. the condition more than (*)MAX values) as a evaluation. Please perform reflow soldering under the above conditions. Please perform the first reflow soldering with reference to the above temperature profile and within 72 h of opening the package. Second reflow soldering In case of second reflow soldering should be performed within 72 h of the first reflow under the above conditions. Storage conditions before the second reflow soldering: 0 C, 70% RH (max) Make any necessary soldering corrections manually. (only once at each soldering point) Soldering iron : 2 W Temperature : 00 C or less Time : within s Do not perform wave soldering. Recommended soldering pattern.2.0.2 Unit: mm (.2) Cleaning When cleaning is required after soldering, Toshiba recommends the following cleaning solvents. It is confirmed that these solvents have no effect on semiconductor devices in our dipping test (under the recommended conditions). In selecting the one for your actual usage, please perform sufficient review on washing condition, using condition and etc. ASAHI CLEAN AK-22AES KAO CLEAN TROUGH 70H PINE ALPHA ST-0S TOSHIBA TECHNOCARE (FRW-7, FRW-, FRV-0) : (made by ASAHI GLASS) : (made by KAO) : (made by ARAKAWA CHEMICAL) : (made by GE TOSHIBA SILICONES) Precaution when mounting Do not apply force to the plastic part of the LED under high-temperature conditions. To avoid damaging the LED plastic, do not apply friction using a hard material. When installing the PCB in a product, ensure that the device does not come into contact with other cmponents. 4 2006-06-

TL(RE,SE,OE,YE,PYE,GE,FGE,PGE)02A(T02) Tape Specifications. Product number format The type of package used for shipment is denoted by a symbol suffix after the product number. The method of classification is as below. (However, this method does not apply to products whose electrical/optical characteristics differ from standard Toshiba specifications) () Tape Type: T02 (4-mm pitch) (2) Example TLRE02A (T02) Tape type Toshiba product No. 2. Handling precautions Tape material protected against static electricity. However, static electricity may occur depending on quantity of charged static electricity and a device may attach to a tape, or a device may be unstable when peeling a tape cover. (a) Since tape materials may accumulate an electrostatic charge, use an ionizer to neutralize the ambient air. (b) For transport and temporary storage of devices, use containers (boxes and bags) and jigs that are made of anti-static materials or of materials which dissipate electrostatic charge.. Tape dimensions Unit: mm Symbol Value Tolerance Symbol Value Tolerance D.0 +0./ 0 P 2 2.00 ±0.0 E.7 ±0. W 8.00 ±0. P 0 4.00 ±0. P 4.00 ±0. t 0.20 ±0.0 A 0.4 ±0. F.0 ±0.0 B 0 2.2 ±0. D. ±0. K 0.0 ±0.0 P 0 K 0 D P 2 t E F W B 0 P D Polarity A 0 2006-06-

TL(RE,SE,OE,YE,PYE,GE,FGE,PGE)02A(T02) 4. Reel dimensions Unit: mm φ80 +0 4.4 ± 9 ± 0. φ2 ± 0.8 φ ± 0. φ60 2 ± 0.. Leader and trailer section of tape 40 mm or more (Note ) 40 mm or more (Note 2) Leading part 90 mm (min) Note : Empty trailer section Note 2: Empty leader section 6 2006-06-

TL(RE,SE,OE,YE,PYE,GE,FGE,PGE)02A(T02) 6. Packing display () Packing quantity Reel Carton,000 pcs,000 pcs (2) Package form: Each reel is sealed in an aluminum pack with silica gel. 7. Label format () Example: TLRE02A (T02) P/N: TYPE TLRE02A TOSHIBA ADDC (T02) Q TY,000 pcs Lot Number Key code for TSB 2C 000 (RANK SYMBOL) Use under -0degC/70%RH within 72h SEAL DATE: [[G]]/RoHS COMPATIBLE DIFFUSED IN ***** *Y804xxxxxxxxxxxxxxxxx* ASSEMBLED IN ***** (2) Label location Reel Carton Tape reel direction Label position Label position The aluminum package in which the reel is supplied also has a copy of the label attached to center of one side. 7 2006-06-

TL(RE,SE,OE,YE,PYE,GE,FGE,PGE)02A(T02) RESTRICTIONS ON PRODUCT USE The information contained herein is subject to change without notice. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. 8 2006-06-