Product Family Data Sheet Rev. 2. 216.6.3 1# High Voltage LED Series Chip on Board LC19D High efficacy COB LED package well-suited for use in spotlight applications Features & Benefits Chip on Board (COB) solution makes it easy to design in Simple assembly reduces manufacturing cost Low thermal resistance InGaN/GaN MQW LED with long time reliability Applications Spotlight / Downlight LED Retrofit Bulbs Outdoor Illumination
2 Table of Contents 1. Characteristics ----------------------- 3 2. Product Code Information ----------------------- 5 3. Typical Characteristics Graphs ----------------------- 9 4. Outline Drawing & Dimension ----------------------- 12 5. Reliability Test Items & Conditions ----------------------- 13 6. Label Structure ----------------------- 14 7. Packing Structure ----------------------- 15 8. Precautions in Handling & Use ----------------------- 17
3 1. Characteristics a) Absolute Maximum Rating Item Symbol Rating Unit Condition Ambient / Operating Temperature T a -4 ~ +15 ºC - Storage Temperature T stg -4 ~ +12 ºC - LED Junction Temperature T J 14 ºC - Case Temperature Tc 15 ºC Forward Current I F 138 ma - Power Dissipation P D 51.8 W - ESD (HBM) - ±2 kv - ESD (MM) - ±.5 kv - b) Electro-optical Characteristics (I F = 54 ma, T J = 85 ºC) Item Unit Rank Min. Typ. Max. Forward Voltage (V F) V YZ 31.8 34.6 37.5 Color Rendering Index (R a) - 5 8 - - 7 9 Thermal Resistance (junction to chip point) ºC/W - 1. - Beam Angle º - 115 - Nominal Power W 2.3 Notes: 1) The COB is tested in pulsed condition at rated test current (1 ms pulse width) and rated temperature (T J = T C = T a = 85 C) 2) Samsung maintains measurement tolerance of: forward voltage = ±5 %, CRI = ±1 3) Refer to the derating curve, 3. Typical Characteristics Graph designed within the range.
4 c) Luminous Flux Characteristics (I F = 54 ma) CRI (R a) Min. Nominal CCT (K) Flux Rank Flux @ T J = 85 C (lm) Min. Typ. Max. 27 J3 2335 2458 - D1 2458 2581-3 J4 2462 2592 - D1 2592 2722-35 J5 2538 2672 - D1 2672 285-8 4 J5 259 2726 - D1 2726 2863-5 J6 2618 2756 - D1 2756 2894-57 J6 2618 2756 - D1 2756 2894-65 J5 259 2726 - D1 2726 2863 - CRI (R a) Min. Nominal CCT (K) Flux Rank Flux @ T J = 85 C (lm) Min. Typ. Max. 27 H9 1999 214 - D1 214 221-9 3 35 J 296 227 - D1 227 2317 - J1 2173 2287 - D1 2287 242-4 J2 222 2337 - D1 2337 2454 - Notes: 1) The COB is tested in pulsed operating condition at rated test current (1 ms pulse width) and rated temperature (T J = T C = 85 C). 2) Samsung maintains measurement tolerance of: Luminous flux = ±7 %, CRI = ±1
5 2. Product Code Information 1 2 3 4 5 6 7 8 9 1 11 12 13 14 15 16 17 18 S P H W H A H D N F 2 5 Y Z W 3 J 3 Digit PKG Information Code Specification 1 2 3 Samsung Package High Power SPH 4 5 Color WH White 6 Product Version A 7 8 Form Factor HD COB 9 Lens Type N No lens 1 Wattage or Model F LC19D 11 Internal Code 2 12 CRI & Sorting Temperature 5 Min. 8 (85 ) 7 Min. 9 (85 ) 13 14 Forward Voltage (V) YZ 31.8~37.5 15 CCT (K) W V U T R Q P 27K 3K 35K 4K 5K 57K 65K 16 MacAdam Step 17 18 Luminous Flux 2 MacAdam 2-step 3 MacAdam 3-step H9 Min. 19 J Min. 2 J1 Min. 21 J2 Min. 22 J3 Min.23 J4 Min. 24 J5 Min. 25 J6 Min. 26
6 a) Binning Structure (I F = 54 ma, T J = 85 ºC) CRI (R a) Min. Nominal CCT (K) Product Code V F Rank Color Rank Flux Rank Flux Range (Φ v, lm) 27 SPHWHAHDNF25YZW2J3 SPHWHAHDNF25YZW3J3 SPHWHAHDNF25YZW2D1 SPHWHAHDNF25YZW3D1 YZ W2 W3 W2 W3 J3 2335 ~ D1 2458 ~ 3 SPHWHAHDNF25YZV24 SPHWHAHDNF25YZV3J4 SPHWHAHDNF25YZV2D1 SPHWHAHDNF25YZV3D1 YZ V2 V3 V2 V3 J4 2462 ~ D1 2592 ~ 8 35 SPHWHAHDNF25YZU25 SPHWHAHDNF25YZU3J5 SPHWHAHDNF25YZU2D1 SPHWHAHDNF25YZU3D1 YZ U2 U3 U2 U3 J5 2538 ~ D1 2672 ~ 4 SPHWHAHDNF25YZT25 SPHWHAHDNF25YZT3J5 SPHWHAHDNF25YZT2D1 SPHWHAHDNF25YZT3D1 YZ T2 T3 T2 T3 J5 259 ~ D1 2726 ~ 5 SPHWHAHDNF25YZR3J6 J6 2618 ~ YZ R3 SPHWHAHDNF25YZR3D1 D1 2756 ~ 57 SPHWHAHDNF25YZQ3J6 J6 2618 ~ YZ Q3 SPHWHAHDNF25YZQ3D1 D1 2756 ~ 65 SPHWHAHDNF25YZP3J5 J5 259 ~ YZ P3 SPHWHAHDNF25YZP3D1 D1 2726 ~
7 CRI (R a) Min. Nominal CCT (K) Product Code V F Rank Color Rank Flux Rank Flux Range (Φ v, lm) 27 SPHWHAHDNF27YZW2H9 SPHWHAHDNF27YZW3H9 SPHWHAHDNF27YZW2D1 SPHWHAHDNF27YZW3D1 YZ W2 W2 W2 W2 H9 1999 ~ D1 214 ~ 9 3 35 SPHWHAHDNF27YZV2J SPHWHAHDNF27YZV3J SPHWHAHDNF27YZV2D1 SPHWHAHDNF27YZV3D1 SPHWHAHDNF27YZU2J1 SPHWHAHDNF27YZU3J1 SPHWHAHDNF27YZU2D1 SPHWHAHDNF27YZU3D1 YZ YZ V2 V3 V2 V3 U2 U3 U2 U3 J 296 ~ D1 227 ~ J1 2173 ~ D1 2287 ~ `4 SPHWHAHDNF27YZT2J2 SPHWHAHDNF27YZT3J2 SPHWHAHDNF27YZT2D1 SPHWHAHDNF27YZT3D1 YZ T2 T3 T2 T3 J2 222 ~ D1 2337 ~
8 b) Chromaticity Region & Coordinates (I F = 54 ma, T J = 85 ºC) θ CIE x,y MacAdam Ellipse (W2, W3) MacAdam Ellipse (V2, V3) Step CIE x CIE y θ a b Step CIE x CIE y θ a b 2-step.4578.411 53.7.54.28 2-step.4338.43 53.22.56.27 3-step.4578.411 53.7.81.42 3-step.4338.43 53.22.83.41 MacAdam Ellipse (U2, U3) MacAdam Ellipse (T2, T3) Step CIE x CIE y θ a b Step CIE x CIE y θ a b 2-step.473.3917 54..62.28 2-step.3818.3797 53.72.63.27 3-step.473.3917 54..93.41 3-step.3818.3797 53.72.94.4 MacAdam Ellipse (R3) MacAdam Ellipse (Q3) Step CIE x CIE y θ a b Step CIE x CIE y θ a b 3-step.3447.3553 59.62.82.35 3-step.3287.3417 59.95.75.32 MacAdam Ellipse (P3) Step CIE x CIE y θ a b 3-step.3123.3282 58.57.67.29 Note: Samsung maintains measurement tolerance of: Cx, Cy = ±.5
9 3. Typical Characteristics Graphs a) Spectrum Distribution (I F = 54 ma, T J = 85 ºC) CCT: 27 K (8 CRI) CCT: 3 K (8 CRI) Relative Intensity vs. Wavelength Relative Intensity vs. Wavelength Relative Emission Intensity(%) 1 8 6 4 2 4 5 6 7 8 Wavelength Relative Emission Intensity(%) 1 8 6 4 2 4 5 6 7 8 Wavelength(nm) CCT: 35 K (8 CRI) CCT: 4 K (8 CRI) Relative Intensity vs. Wavelength Relative Intensity vs. Wavelength Relative Emission Intensity(%) 1 8 6 4 2 4 5 6 7 8 Wavelength Relative Emission Intensity(%) 1 8 6 4 2 4 5 6 7 8 Wavelength CCT: 5 K (8 CRI) CCT: 57 K (8 CRI) Relative Intensity vs. Wavelength Relative Intensity vs. Wavelength Relative Emission Intensity(%) 1 8 6 4 2 4 5 6 7 8 Wavelength Relative Emission Intensity(%) 1 8 6 4 2 4 5 6 7 8 Wavelength
1 CCT: 65 K (8 CRI) Relative Emission Intensity(%) Relative Intensity vs. Wavelength 1 8 6 4 2 4 5 6 7 8 Wavelength b) Forward Current Characteristics (T J = 85 ºC) Relative luminous Flux vs. Forward Current Forward Voltage vs. Forward Current Relative Luminous Flux(%) 4 3 2 1.3.6.9 1.2 Forward Voltage(%) 45 4 35 3.3.6.9 1.2 Forward Current(A) Forward Current(A) C) Temperature Characteristics (I F = 54mA) Relative Luminous Flux vs. Temperature Forward Voltage vs. Temperature Relative Luminous Flux(%) 15 1 95 9 85 8 2 4 6 8 1 Forward Voltage(V) 36.5 36. 35.5 35. 34.5 34. 33.5 33. 2 4 6 8 1 Tc( ) Tc( )
11 d) Color Shift Characteristics (T J = 85 ºC, I F = 54mA, CRI8+) CIE x, CIE y vs. Forward Current CIEx, CIEy vs. Temperature CIE x, CIE y -.1 -.2 -.3 -.4 CIE x CIE y CIE x, CIE y -.1 -.2 -.3 -.4 ΔCIE x ΔCIE y -.5..35.7 1.5 1.4 Forward Current(A) -.5 2 4 6 8 1 Tc( ) e) Beam Angle Characteristics (I F = 54 ma, T J = 85 ºC) Relative Luminous Intensity 1.2 1.8.6.4.2-1 -8-6 -4-2 2 4 6 8 1 Angle( ) f) Derating Characteristics 15 Derating Curve If [ ma ] 1 5 2 4 6 8 1 12 Tc [ ]
12 4. Outline Drawing & Dimension T C 1. Unit: mm 2. Tolerance: ±.3 mm Item Dimension Tolerance Unit Length 19. ±.15 mm Width 19. ±.15 mm Height 1.5 ±.3 mm Light Emitting Surface (LES) Diameter 14.5 ±.3 mm Note: Denoted product information above is only an example ( LC19D, CRI8+, 3K )
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14 5. Reliability Test Items & Conditions a) Test Items Test Item Test Condition Test Hour / Cycle High Temperature Humidity Life Test High Temperature Life Test Low Temperature Life Test 6 ºC, 9 % RH,, DC Derating, I F 1 h 85 ºC, DC Derating, I F 1 h -4 ºC, DC, I F = 97 ma 1 h Pulsed Operating Life Test 55, Pulse width 1 μs, duty cycle 3 % 1 h High Temperature Storage Low Temperature Storage Temperature Humidity Storage 12 ºC 1 h -4 ºC 1 h 6 ºC, 9% RH 1h Temperature Cycle On/Off Test ESD (HBM) -4 ºC / 85 ºC each 2 min, 3 min transfer power on/off each 5 min, DC Derating, I F = max R 1: 1 MΩ R 2: 1.5 kω C: 1 pf V: ±2 kv 1 cycles 5 times ESD (MM) R 1: 1 MΩ R 2: kω C: 2 pf V: ±.2 kv 5 times Vibration Test 2 ~ 8 Hz (displacement:.6 inch, max. 2 g) 8 ~ 2 khz (max. 2 g) min. frequency max. frequency 4 min transfer 4 times Mechanical Shock Test 15 g,.5 ms each of the 6 surfaces (3 axis x 2 sides) 5 times Sulfur Resistance 25 C, 75%, H2S 15 ppm 54h b) Criteria for Judging the Damage Item Symbol Test Condition (T c = 25 ºC) Min. Limit Max. Forward Voltage V F I F = 54 ma L.S.L. *.9 U.S.L. * 1.1 Luminous Flux Φ v I F = 54 ma L.S.L *.7 U.S.L * 1.3 6. Label Structure
15 a) Label Structure abcdef YZW3J3 SPHWHAHDNF25YZW3J3 YZW3J3 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII G4AZC41 / 11 / xxxx pcs IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Lot Number Bin Code Product Code Note: Denoted bin code and product code above is only an example (see description on page 5) Bin Code: ab: Forward Voltage bin (refer to page 11) cd: Chromaticity bin (refer to page 9-1) ef: Luminous Flux bin (refer to page 6) b) Lot Number The lot number is composed of the following characters: YZW3J3 SPHWHAHDNF25YZW3J3 YZW3J3 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 123456789/1abc/ xxxx pcs IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 1 3456789 / 1abc / xxxx pcs 1 2 3 4 : Production site (S: Giheung, Korea, G: Tianjin, China) : 4 (LED) : Product state (A: Normal, B: Bulk, C: First Production, R: Reproduction, S: Sample) : Year (Z: 215, A: 216, B: 217 ) 5 : Month (1~9, A, B, C) 6789 : Day (1~9, A, B~V) abc : Product serial number (1 ~ 999)
16 6. Packing Structure Max. quantity Dimension(mm) Packing material in pcs of COB Length Width Height Tolerance Tray 2 16 18 1 1. Aluminum Bag 4(2 trays) 21 241 1 Inner Box 16 23 84 26 2 Outer Box 16 476 445 272 5 a) Packing Structure Label Label
17 b) Tray 1 Cover 2 Body c) Aluminum Vinyl Packing Bag
18 8. Precautions in Handling & Use 1) This device should not be used in any type of fluid such as water, oil, organic solvent, etc. When cleaning is required, IPA is recommended as the cleaning agent. Some solvent-based cleaning agent may damage the silicone resins used in the device. 2) LEDs must be stored in a clean environment. If the LEDs are to be stored for three months or more after being shipped from Samsung, they should be packed with a nitrogen-filled container (shelf life of sealed bags is 12 months at temperature ~4 ºC, ~9 % RH). 3) After storage bag is opened, device subjected to soldering, solder reflow, or other high temperature processes must be: a. Mounted within 672 hours (28 days) at an assembly line with a condition of no more than 3 ºC / 6 % RH, or b. Stored at <1 % RH 4) Repack unused products with anti-moisture packing, fold to close any opening and then store in a dry place. 5) Devices require baking before mounting, if humidity card reading is >6 % at 23 ± 5 ºC. 6) Devices must be baked for 1 hour at 6 ± 5 ºC, if baking is required. 7) The LEDs are sensitive to the static electricity and surge current. It is recommended to use a wrist band or antielectrostatic glove when handling the LEDs. If voltage exceeding the absolute maximum rating is applied to LEDs, it may cause damage or even destruction to LED devices. Damaged LEDs may show some unusual characteristics such as increase in leakage current, lowered turn-on voltage, or abnormal lighting of LEDs at low current. 8) VOCs (Volatile Organic Compounds) can be generated from adhesives, flux, hardener or organic additives used in luminaires (fixtures). Transparent LED silicone encapsulant is permeable to those chemicals and they may lead to a discoloration of encapsulant when they exposed to heat or light. This phenomenon can cause a significant loss of light emitted (output) from the luminaires. In order to prevent these problems, we recommend users to know the physical properties of materials used in luminaires and they must be carefully selected. 9) The resin area is very sensitive, please do not handle, press, touch, rub, clean, or pick by with tweezers on it. Instead, please pick at the handling area as indicated below.
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