Type BSS225 SIPMOS Small-Signal-Transistor Feature n-channel enhancement mode Logic level Product Summary 1) V DS 6 V R DS(on),max 45 Ω I D.9 A dv /dt rated Qualified according to AEC Q11 Halogen free according to IEC61249 2 21 SOT89 Type Package Pb-free Tape and Reel Information Marking BSS225 SOT89 Yes H6327: 3PCS/reel KD Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D T A =25 C.9 A T A =7 C.73 Pulsed drain current I D,pulse T A =25 C.36 Reverse diode dv /dt dv /dt I D =.9 A, V DS =48 V, di /dt =2 A/µs, T j,max =15 C 6 kv/µs Gate source voltage V GS ±2 V ESD Class JESD22 A114 HBM Class 1a Power dissipation P tot T A =25 C 1. W Operating and storage temperature T j, T stg -55... 15 C IEC climatic category; DIN IEC 68-1 55/15/56 Rev. 1.28 page 1 215-2-23
Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - minimal footprint R thja - - 125 K/W Electrical characteristics, at T j =25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage 1) V (BR)DSS V GS = V, I D =25 µa 6 - - V Gate threshold voltage V GS(th) V DS =V GS ; ID=94 µa 1.3 1.9 2.3 Drain-source leakage current I D (off) V DS =6 V, V GS = V, T j =25 C V DS =6 V, V GS = V, T j =15 C - -.1 µa - - 5 Gate-source leakage current I GSS V GS =2 V, V DS = V - 1 1 na Drain-source on-state resistance R DS(on) V GS =4.5 V, I D =.9 A - 3 45 W V GS =1 V, I D =.9 A - 28 45 Transconductance g fs V DS >2 I D R DS(on)max, I D =.75 A.5.14 - S 1) V DS is zero-hour rated, see note at p.8 Rev. 1.28 page 2 215-2-23
Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 99 131 pf Output capacitance C oss V GS = V, V DS =25 V, f =1 MHz - 7.6 11 Reverse transfer capacitance C rss - 3.1 4.4 Turn-on delay time t d(on) - 14. 2. ns Rise time t r V DD =3 V, V GS =1 V, I D =.9 A, - 38. 57. Turn-off delay time t d(off) R G =6 Ω - 62. 93 Fall time t f - 41. 62 Gate Charge Characteristics Gate to source charge Q gs -.32.43 nc Gate to drain charge Q gd V DD =4 V, - 1.4 2.1 I D =.9 A, Gate charge total Q g V GS = to 1 V - 3.9 5.8 Gate plateau voltage V plateau - 3.3 - V Reverse Diode Diode continous forward current I S - -.9 A T A =25 C Diode pulse current I S,pulse - -.36 Diode forward voltage V SD V GS = V, I F =.9 A, T j =25 C -.75 1.2 V Reverse recovery time t rr V R =3 V, I F =.9 A, - 246 37 ns Reverse recovery charge Q rr di F /dt =1 A/µs - 248 373 nc Rev. 1.28 page 3 215-2-23
1 Power dissipation 2 Drain current P tot =f(t A ) I D =f(t A ); V GS 1 V.1 1.8.75.6 P tot [W].5.4.25.2 4 8 12 16 4 8 12 16 T A [ C] T A [ C] 3 Safe operating area 4 Max. transient thermal impedance I D =f(v DS ); T A =25 C; D = Z thja =f(t p ) parameter: t p parameter: D =t p /T 1 1 3 2 µs limited by on-state resistance 1 µs 1 2.5 1-1 1 ms.2 1 ms Z thja [K/W] 1 1.1.5.2.1 1 DC single pulse 1-3 1 1 1 1 1-1 1-5 1-4 1-3 1-2 1-1 1 1 1 1 2 1 3 V DS [V] t p [s] Rev. 1.28 page 4 215-2-23
5 Typ. output characteristics 6 Typ. drain-source on resistance I D =f(v DS ); T j =25 C R DS(on) =f(i D ); T j =25 C parameter: V GS parameter: V GS.3 V 1 V 5 4 2.6 V3 V 3.2 V 3.6 V 3.8 V 4 V 38 5 V.25 V 4 36.2 V 3.8 34 1 V.15 V 3.6 R DS(on) [Ω] 32 3 28.1 V 3.2 26.5 V 3 24 22 V 2.6 1 2 3 4 5 6 7 8 9 1 V DS [V] 2.1.2.3.4 7 Typ. transfer characteristics 8 Typ. forward transconductance I D =f(v GS ); V DS >2 I D R DS(on)max g fs =f(i D ); T j =25 C.3.3.25.2.2 g fs [S].15.1.1.5 1 2 3 4 V GS [V]..1.2.3 Rev. 1.28 page 5 215-2-23
9 Drain-source on-state resistance 1 Typ. gate threshold voltage R DS(on) =f(t j ); I D =.1 A; V GS =1 V V GS(th) =f(t j ); V DS =V GS ; I D =94 µa parameter: I D 13 2.8 12 11 2.4 %98 1 9 2 R DS(on) [Ω] 8 7 6 5 %98 V GS(th) [V] 1.6 1.2 typ %2 4 3 2 1 typ.8.4-6 -2 2 6 1 14 T j [ C] -6-2 2 6 1 14 T j [ C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(v DS ); V GS = V; f =1 MHz; T j =25 C I F =f(v SD ) parameter: T j 1 3 1 15 C 25 C 15 C, 98% 1 2 Ciss 1-1 C [pf] I F [A] 25 C, 98% 1 1 1-2 Coss Crss 1 1 2 3 4 5 1-3.4.8 1.2 1.6 2 2.4 2.8 V DS [V] V SD [V] Rev. 1.28 page 6 215-2-23
13 Typ. gate charge 14 Drain-source breakdown voltage V GS =f(q gate ); I D =.1 A pulsed V BR(DSS) =f(t j ); I D =25 µa parameter: V DD 12 7 1 3 V 68 66 8 64 V GS [V] 6 12 V 48 V V BR(DSS) [V] 62 6 58 4 56 2 54 52.5 1 1.5 2 2.5 3 3.5 4 Q gate [nc] 5-6 -2 2 6 1 14 T j [ C] Rev. 1.28 page 7 215-2-23
Package Outline: Footprint: Packaging: Dimensions in mm note: Due to small size of the package, creeping currents between leads external to the package can occur in the application. Extra protection from contamination for the package (i.e. protective laquer) is necessary to maintain the values, specified in this document. Values given in this document are only valid for hour lifetime, if no suitable external protection is applied. Rev. 1.28 page 8 215-2-23
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