Date:- 3 th April, 15 Data Sheet Issue:- 3 Phase Control Thyristor Types Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM Repetitive peak off-state voltage, (note 1) 18 V V DSM Non-repetitive peak off-state voltage, (note 1) 19 V V RRM Repetitive peak reverse voltage, (note 1) 18 V V RSM Non-repetitive peak reverse voltage, (note 1) 19 V UNITS OTHER RATINGS MAXIMUM LIMITS I T(AV)M Maximum average on-state current, T sink =55 C, (note ) 14 A I T(AV)M Maximum average on-state current. T sink =85 C, (note ) 88 A I T(AV)M Maximum average on-state current. T sink =85 C, (note 3) 535 A I T(RMS)M Nominal RMS on-state current, T sink =5 C, (note ) 415 A I T(d.c.) D.C. on-state current, T sink =5 C, (note 4) 95 A I TSM Peak non-repetitive surge t p =1ms, V rm =6%V RRM, (note 5) 1575 A I TSM Peak non-repetitive surge t p =1ms, V rm 1V, (note 5) 175 A I t I t capacity for fusing t p =1ms, V rm =6%V RRM, (note 5) 1.4 1 6 A s I t I t capacity for fusing t p =1ms, V rm 1V, (note 5) 1.53 1 6 A s (di/dt) cr Critical rate of rise of on-state current (note 6) (continuous, 5Hz) (non-repetitive) 4 V RGM Peak reverse gate voltage 5 V P G(AV) Mean forward gate power 3 W P GM Peak forward gate power 3 W T j op Operating temperature range -6 to +13 C T stg Storage temperature range -6 to +13 C Notes:- 1) De-rating factor of.13% per C is applicable for T j below 5 C. ) Double side cooled, single phase; 5Hz, 18 half-sinewave. 3) Single side cooled, single phase; 5Hz, 18 half-sinewave. 4) Double side cooled. 5) Half-sinewave, 15 C T j initial. 6) V D =67% V DRM, I TM =16A, I FG =A, t r.5µs, T case =13 C. UNITS A/µs Data Sheet. Types Page 1 of 11 April, 15
Phase Control Thyristor Types Characteristics PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS V TM Maximum peak on-state voltage - - 1.4 I TM =17A V V TM Maximum peak on-state voltage - -. I TM =37A V V T Threshold voltage - -.85 V r T Slope resistance - -.3 mω (dv/dt) cr Critical rate of rise of off-state voltage 1 - - V D =67% V DRM, linear ramp, gate o/c V/µs I DRM Peak off-state current - - 1 Rated V DRM ma I RRM Peak reverse current - - 1 Rated V RRM ma V GT Gate trigger voltage - -.5 V T j =5 C V D =1V, I T =3A I GT Gate trigger current - - 5 ma V GD Gate non-trigger voltage - -.5 Rated V DRM V I H Holding current - - 3 T j =5 C ma t gd Gate-controlled turn-on delay time - -. V D =67% V DRM, I T =8A, di/dt=1a/µs, I FG =A, t r =.5µs, T j =5 C Q rr Recovered charge - 13 14 µc Q ra Recovered charge, 5% Chord - 95 - I TM =1A, t p =1µs, di/dt=1a/µs, µc I rr Reverse recovery current - 15 - V r =1V A t rr Reverse recovery time - 15 - t q R thjk Turn-off time Thermal resistance, junction to heatsink - 1 3-18 33 I TM =1A, t p =1µs, di/dt=1a/µs, V r =1V, V dr =67%V DRM, dv dr /dt=v/µs I TM =1A, t p =1µs, di/dt=1a/µs, V r =1V, V dr =67%V DRM, dv dr /dt=v/µs - -.33 Double side cooled K/W - -.66 Single side cooled K/W F Mounting force 14-16 Note. kn W t Weight - 8 - g µs µs µs µs Notes:- 1) Unless otherwise indicated T j =13 C. ) For other clamp forces, please consult factory. Data Sheet. Types Page of 11 April, 15
Phase Control Thyristor Types Notes on Ratings and Characteristics 1. Voltage Grade Table V Voltage Grade DRM V RRM V DSM V RSM V D V R V V DC V 18 18 19 135. Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production. 3. De-rating Factor A blocking voltage de-rating factor of.13%/ C is applicable to this device for T j below 5 C. 4. Repetitive dv/dt Standard dv/dt is 1V/µs. 5. Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 6. Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 4A/µs at any time during turnon on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network. 7. Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 3V is assumed. This gate drive must be applied when using the full di/dt capability of the device. I GM 4A/µs I G t p1 The magnitude of I GM should be between five and ten times I GT, which is shown on page. Its duration (t p1 ) should be µs or sufficient to allow the anode current to reach ten times I L, whichever is greater. Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The back-porch current I G should remain flowing for the same duration as the anode current and have a magnitude in the order of 1.5 times I GT. Data Sheet. Types Page 3 of 11 April, 15
Phase Control Thyristor Types 8. Computer Modelling Parameters I 8.1 Device Dissipation Calculations VT + VT + 4 AV = ff ff r T r T W AV and: Where V T =.85V, r T =.3mΩ, R th = Supplementary thermal impedance, see table below and ff = Form factor, see table below. W AV T = R T = T th j max T K Supplementary Thermal Impedance Conduction Angle 3 6 9 1 18 7 d.c. Square wave Double Side Cooled.41.399.383.371.355.339.33 Square wave Anode Side Cooled.746.7.76.696.683.671.66 Sine wave Double Side Cooled.41.377.363.353.331 Sine wave Anode Side Cooled.718.695.685.678.664 Form Factors Conduction Angle 3 6 9 1 18 7 d.c. Square wave 3.46.45 1.73 1.41 1.15 1 Sine wave 3.98.78. 1.88 1.57 8. Calculating V T using ABCD Coefficients The on-state characteristic I T vs. V T, on page 6 is represented in two ways; (i) the well established V T and r T tangent used for rating purposes and (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for V T in terms of I T given below: V T = A + B ln ( IT ) + C IT + D IT The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The resulting values for V T agree with the true device characteristic over a current range, which is limited to that plotted. 5 C Coefficients 13 C Coefficients A.9375198 A.65115 B.5873 B.3458985 C.56656 1-4 C.864584 1-4 D 6.8693 1-4 D 7.59681 1-4 Data Sheet. Types Page 4 of 11 April, 15
Phase Control Thyristor Types 8.3 D.C. Thermal Impedance Calculation p = n t = p= 1 r r p 1 e t τ p Where p = 1 to n, n is the number of terms in the series and: t = Duration of heating pulse in seconds. r t = Thermal resistance at time t. r p = Amplitude of p th term. τ p = Time Constant of r th term. The coefficients for this device are shown in the tables below: D.C. Double Side Cooled, junction to heatsink Term 1 3 4 r p.197478 9.98339 1-3.9716 1-3 1.6573 1-3 τ p.81566.7719755.563659.774668 1-3 D.C. Single Side Cooled, junction to heatsink Term 1 3 4 5 r p.4715 4.47658 1-3 8.975167 1-3 4.84951 1-3 7.67798 1-4 τ p 4.69636.5955.9719.8949 1.41586 1-3 9. Reverse recovery ratings (i) Q ra is based on 5% I rm chord as shown in Diagram 1 Diagram 1 (ii) Q rr is based on a 15µs integration time i.e. (iii) K Factor = t t 1 Q rr = 15µ s i rr. dt Data Sheet. Types Page 5 of 11 April, 15
Phase Control Thyristor Types Curves Figure 1 On-state characteristics of Limit device Figure Transient thermal impedance junction to heatsink 1.1 SSC DSC Instantaneous On-state current - I TM (A) 1 T j = 13 C T j = 5 C Thermal impedance (K/W).1.1 1.5 1 1.5.5 3 Instantaneous On-state voltage - V TM (V).1.1.1.1.1 1 1 1 Time (s) Figure 3 Gate Characteristics Trigger limits Figure 4 Gate Characteristics Power Curves 8 1 7 T j =5 C T j =5 C 1 Max V G dc 6 Gate Trigger Voltage - V GT (V) 5 4 3 I GT, V GT Max V G dc Gate Trigger Voltage - V GT (V) 8 6 4 P GM Max 3W dc 15 C 5 C -6 C P G(AV) 4W dc 1 Min V G dc I GD, V Min V G dc GD..4.6.8 1 Gate Trigger Current - I GT (A) 4 6 Gate Trigger Current - I GT (A) 8 Data Sheet. Types Page 6 of 11 April, 15
Phase Control Thyristor Types Figure 5 Total Recovered Charge, Q rr Figure 6 Recovered Charge, Q ra (5% chord) 1 T j =13 C 1 T j =13 C Recovered charge - Q rr (µc) A 15A 1A 5A Recovered charge - Q ra, 5% chord (µc) A 15A 1A 5A 1 1 1 1 1 di/dt (A/µs) 1 1 1 1 1 di/dt (A/µs) Figure 7 Peak Reverse Recovery Current, I rm Figure 8 Maximum Recovery Time, t rr (5% chord) 1 T j =13 C A 15A 1A 5A 1 T j =13 C Reverse recovery current - I rm (A) 1 Reverse recovery time - t rr, 5% chord (µs) 1 A 15A 1A 5A 1 1 1 1 1 di/dt (A/µs) 1 1 1 1 1 di/dt (A/µs) Data Sheet. Types Page 7 of 11 April, 15
Phase Control Thyristor Types Figure 9 On-state current vs. Power dissipation Double Side Cooled (Sine wave) Figure 1 On-state current vs. Case temperature Double Side Cooled (Sine wave) 35 18 15 3 6 9 1 15 3 Maximum forward dissipation (W) 5 15 1 Maximum permissable case temperature ( C) 1 75 5 5 5 3 6 9 1 18 5 1 15 Mean forward current (A) (Whole cycle averaged) 5 1 15 Mean forward current (A) (Whole cycle averaged) Figure 11 On-state current vs. Power dissipation Double Side Cooled (Square wave) Figure 1 On-state current vs. Case temperature Double Side Cooled (Square wave) 35 d.c. 7 15 3 1 9 6 18 15 Maximum forward dissipation (W) 5 15 1 3 Maximum permissible case temperature ( C) 1 75 5 3 6 9 1 18 7 d.c. 5 5 5 1 15 5 Mean Forward Current (A) (Whole Cycle Averaged) 5 1 15 5 Mean Forward Current (A) (Whole Cycle Averaged) Data Sheet. Types Page 8 of 11 April, 15
Phase Control Thyristor Types Figure 13 On-state current vs. Power dissipation Single Side Cooled (Sine wave) Figure 14 On-state current vs. Case temperature Single Side Cooled (Sine wave) 18 15 16 3 6 9 1 18 15 14 Maximum forward dissipation (W) 1 1 8 6 Maximum permissable case temperature ( C) 1 75 5 4 5 3 6 9 1 18 4 6 8 1 1 Mean forward current (A) (Whole cycle averaged) 4 6 8 1 1 Mean forward current (A) (Whole cycle averaged) Figure 15 On-state current vs. Power dissipation Single Side Cooled (Square wave) Figure 16 On-state current vs. Case temperature Single Side Cooled (Square wave) 18 15 16 15 14 Maximum forward dissipation (W) 1 1 8 6 d.c. 7 18 1 9 6 3 Maximum permissible case temperature ( C) 1 75 5 3 6 9 1 18 7 d.c. 4 5 4 6 8 1 1 14 Mean Forward Current (A) (Whole Cycle Averaged) 4 6 8 1 1 14 Mean Forward Current (A) (Whole Cycle Averaged) Data Sheet. Types Page 9 of 11 April, 15
Phase Control Thyristor Types Figure 17 Maximum surge and I t Ratings 1 T j (initial) = 13 C Gate may temporarily lose control of conduction angle 1.E+8 Total peak half sine surge current (A) 1 1 I t: V RRM 1V I t: 6% V RRM I TSM : V RRM 1V 1.E+7 1.E+6 Maximum I t (A s) I TSM : 6% V RRM 1 1 3 5 1 1 5 1 5 1 Duration of surge (ms) Duration of surge (cycles @ 5Hz) 1.E+5 Data Sheet. Types Page 1 of 11 April, 15
Phase Control Thyristor Types Outline Drawing & Ordering Information 11A47 ORDERING INFORMATION (Please quote 1 digit code as below) N175 LN 18 Fixed Type Code Fixed outline code Order code: 18V V DRM, V RRM, 6mm clamp height capsule. Voltage code V DRM /1 18 Fixed turn-off time code IXYS Semiconductor GmbH Edisonstraße 15 D-6863 Lampertheim Tel: +49 66 53- Fax: +49 66 53-67 E-mail: marcom@ixys.de IXYS UK Westcode Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 ()149 44454 Fax: +44 ()149 659448 E-mail: sales@ixysuk.com IXYS Corporation 159 Buckeye Drive Milpitas CA 9535-7418 Tel: +1 (48) 457 9 Fax: +1 (48) 496 67 E-mail: sales@ixys.net www.ixysuk.com www.ixys.com IXYS Long Beach IXYS Long Beach, Inc 5 Mira Mar Ave, Long Beach CA 9815 Tel: +1 (56) 96 6584 Fax: +1 (56) 96 6585 E-mail: service@ixyslongbeach.com The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd. IXYS UK Westcode Ltd. In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without prior notice. Devices with a suffix code (-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Data Sheet. Types Page 11 of 11 April, 15