BCM857BV; BCM857BS; BCM857DS

Similar documents
65 V, 100 ma NPN/PNP general-purpose transistor. Table 1. Product overview Type number Package NPN/NPN PNP/PNP Nexperia JEITA

NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

150 V, 2 A NPN high-voltage low V CEsat (BISS) transistor

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

60 V, 0.3 A N-channel Trench MOSFET

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DATA SHEET. BC817DPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Aug 09.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DATA SHEET. PEMD48; PUMD48 NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS

DISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D302. PMEM4020ND NPN transistor/schottky-diode module. Product data sheet 2003 Nov 10

DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Apr 09

PHD/PHP36N03LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 General description. 1.

DATA SHEET. BC846; BC847; BC848 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Feb 04

DATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DATA SHEET. PBSS4480X 80 V, 4 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2004 Aug 5

DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 12

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DATA SHEET. PBSS4250X 50 V, 2 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Jun 17

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DATA SHEET. BC369 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Nov 20.

Silicon N-channel dual gate MOS-FET IMPORTANT NOTICE. use

DISCRETE SEMICONDUCTORS DATA SHEET. PMBT3906 PNP switching transistor. Product specification Supersedes data of 1999 Apr 27.

DATA SHEET. BCP69 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Nov 15.

DATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01.

DATA SHEET. BC846W; BC847W; BC848W NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 23

Dual rugged ultrafast rectifier diode, 20 A, 150 V. Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package.

N-channel TrenchMOS standard level FET. Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance

PHB108NQ03LT. N-channel TrenchMOS logic level FET

N-channel TrenchMOS logic level FET

PSMN B. N-channel TrenchMOS SiliconMAX standard level FET. High frequency computer motherboard DC-to-DC convertors

PSMN005-75B. N-channel TrenchMOS SiliconMAX standard level FET. High frequency computer motherboard DC-to-DC convertors

DATA SHEET. PH2369 NPN switching transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Oct 11.

PSMN006-20K. N-channel TrenchMOS SiliconMAX ultra low level FET

PSMN004-60B. N-channel TrenchMOS SiliconMAX standard level FET. High frequency computer motherboard DC-to-DC convertors

N-channel TrenchMOS standard level FET. High noise immunity due to high gate threshold voltage

N-channel TrenchMOS standard level FET. Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance

N-channel TrenchMOS logic level FET

74HC1GU04GV. 1. General description. 2. Features. 3. Ordering information. Marking. 5. Functional diagram. Inverter

N-channel TrenchMOS ultra low level FET. Higher operating power due to low thermal resistance Interfaces directly with low voltage gate drivers

DATA SHEET. PBSS5350D 50 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 13.

BUK9Y53-100B. N-channel TrenchMOS logic level FET. Table 1. Pinning Pin Description Simplified outline Symbol 1, 2, 3 source (S) 4 gate (G)

Passivated ultra sensitive gate thyristor in a SOT54 plastic package. Earth leakage circuit breakers or Ground Fault Circuit Interrupters (GFCI)

BUK B. N-channel TrenchMOS standard level FET

PSMN4R5-40PS. N-channel 40 V 4.6 mω standard level MOSFET. High efficiency due to low switching and conduction losses

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20

DATA SHEET. PBSS4540Z 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 14.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PHP110NQ08T. N-channel TrenchMOS standard level FET

Dual 3-channel analog multiplexer/demultiplexer with supplementary switches

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DISCRETE SEMICONDUCTORS DATA SHEET. PMMT591A PNP BISS transistor. Product specification Supersedes data of 2001 Jun 11.

74HC1G02; 74HCT1G02. The standard output currents are half those of the 74HC02 and 74HCT02.

74HC2G34; 74HCT2G34. The 74HC2G34; 74HCT2G34 is a high-speed Si-gate CMOS device. The 74HC2G34; 74HCT2G34 provides two buffers.

DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.

74HC1G86; 74HCT1G86. 2-input EXCLUSIVE-OR gate. The standard output currents are half those of the 74HC/HCT86.

Temperature range Name Description Version XC7SET32GW 40 C to +125 C TSSOP5 plastic thin shrink small outline package; 5 leads; body width 1.

HEF4028B. 1. General description. 2. Features. 3. Applications. 4. Ordering information. BCD to decimal decoder

PSMN013-80YS. N-channel LFPAK 80 V 12.9 mω standard level MOSFET

PSMN4R3-30PL. N-channel 30 V 4.3 mω logic level MOSFET. High efficiency due to low switching and conduction losses

2-input EXCLUSIVE-OR gate

BUK B. N-channel TrenchMOS logic level FET

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PSMN8R3-40YS. N-channel LFPAK 40 V 8.6 mω standard level MOSFET

PSMN2R6-40YS. N-channel LFPAK 40 V 2.8 mω standard level MOSFET

2-input AND gate with open-drain output. The 74AHC1G09 is a high-speed Si-gate CMOS device.

BUK A. N-channel TrenchMOS standard level FET

Dual N-channel field-effect transistor. Two N-channel symmetrical junction field-effect transistors in a SOT363 package.

XC7SET General description. 2. Features. 3. Applications. Ordering information. Inverting Schmitt trigger

N-channel TrenchMOS logic level FET

N-channel TrenchMOS standard level FET

BF556A; BF556B; BF556C

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PSMN1R3-30YL. N-channel 30 V 1.3 mω logic level MOSFET in LFPAK

N-channel 30 V 1.3 mω logic level MOSFET in LFPAK

20 / 20 V, 800 / 550 ma N/P-channel Trench MOSFET

2N7002T. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.

The 74LV08 provides a quad 2-input AND function.

74AHC1G00; 74AHCT1G00

2N7002F. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.

20 V, complementary Trench MOSFET. Charging switch for portable devices DC-to-DC converters Small brushless DC motor drive

The 74LVC1G11 provides a single 3-input AND gate.

BF545A; BF545B; BF545C

The 74LVC1G02 provides the single 2-input NOR function.

DATA SHEET. PDTA114E series PNP resistor-equipped transistors; R1 = 10 kω, R2 = 10 kω DISCRETE SEMICONDUCTORS

5-stage Johnson decade counter

The 74LV32 provides a quad 2-input OR function.

Transcription:

BCM857BV; BCM857BS; BCM857DS Rev. 05 27 June 2006 Product data sheet 1. Product profile 1.1 General description in small Surface-Mounted Device (SMD) plastic packages. The transistors are fully isolated internally. Table 1. Product overview Type number Package NPN/NPN Matched version of Philips JEITA complement BCM857BV SOT666 - BCM847BV BC857BV BCM857BS SOT363 SC-88 BCM847BS BC857BS BCM857DS SOT457 SC-74 BCM847DS - 1.2 Features Current gain matching Base-emitter voltage matching Drop-in replacement for standard double transistors 1.3 Applications Current mirror Differential amplifier 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V CEO collector-emitter voltage open base - - 45 V I C collector current - - 100 ma h FE DC current gain V CE = 5 V; I C = 2 ma 200 290 450

2. Pinning information Table 2. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Per device h FE1 /h FE2 h FE matching V CE = 5 V; 0.9 1 - I C = 2 ma V BE1 V BE2 V BE matching V CE = 5 V; I C = 2 ma [2] - - 2 mv The smaller of the two values is taken as the numerator. [2] The smaller of the two values is subtracted from the larger value. Table 3. Pinning Pin Description Simplified outline Symbol 1 emitter TR1 2 base TR1 6 5 4 6 5 4 3 collector TR2 TR2 4 emitter TR2 TR1 5 base TR2 1 2 3 6 collector TR1 001aab555 1 2 3 sym018 3. Ordering information 4. Marking Table 4. Ordering information Type number Package Name Description Version BCM857BV - plastic surface-mounted package; 6 leads SOT666 BCM857BS SC-88 plastic surface-mounted package; 6 leads SOT363 BCM857DS SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457 Table 5. Marking codes Type number Marking code BCM857BV 3B BCM857BS A9* BCM857DS R8 * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China Product data sheet Rev. 05 27 June 2006 2 of 15

5. Limiting values 6. Thermal characteristics Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V CBO collector-base voltage open emitter - 50 V V CEO collector-emitter voltage open base - 45 V V EBO emitter-base voltage open collector - 5 V I C collector current - 100 ma I CM peak collector current single pulse; - 200 ma t p 1ms P tot total power dissipation T amb 25 C SOT666 [2] - 200 mw SOT363-200 mw SOT457-250 mw Per device P tot total power dissipation T amb 25 C SOT666 [2] - 300 mw SOT363-300 mw SOT457-380 mw T j junction temperature - 150 C T amb ambient temperature 65 +150 C T stg storage temperature 65 +150 C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. Table 7. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor R th(j-a) thermal resistance from junction to ambient in free air SOT666 [2] - - 625 K/W SOT363 - - 625 K/W SOT457 - - 500 K/W Product data sheet Rev. 05 27 June 2006 3 of 15

7. Characteristics Table 7. Thermal characteristics continued Symbol Parameter Conditions Min Typ Max Unit Per device R th(j-a) thermal resistance from junction to ambient in free air SOT666 [2] - - 416 K/W SOT363 - - 416 K/W SOT457 - - 328 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. Table 8. Characteristics T amb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit Per transistor I CBO I EBO collector-base cut-off current emitter-base cut-off current V CB = 30 V; I E =0A V CB = 30 V; I E =0A; T j = 150 C V EB = 5 V; I C =0A h FE DC current gain V CE = 5 V; I C = 10 µa V CE = 5 V; I C = 2 ma V CEsat V BEsat collector-emitter saturation voltage base-emitter saturation voltage I C = 10 ma; I B = 0.5 ma I C = 100 ma; I B = 5 ma I C = 10 ma; I B = 0.5 ma I C = 100 ma; I B = 5 ma V BE base-emitter voltage V CE = 5 V; I C = 2 ma V CE = 5 V; I C = 10 ma C c collector capacitance V CB = 10 V; I E =i e =0A; f=1mhz C e emitter capacitance V EB = 0.5 V; I C =i c =0A; f=1mhz - - 15 na - - 5 µa - - 100 na - 250-200 290 450-50 200 mv - 200 400 mv - 760 - mv - 920 - mv [2] 600 650 700 mv [2] - - 760 mv - - 2.2 pf - 10 - pf Product data sheet Rev. 05 27 June 2006 4 of 15

Table 8. Characteristics continued T amb =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit f T transition frequency V CE = 5 V; I C = 10 ma; f = 100 MHz 100 175 - MHz NF noise figure V CE = 5 V; I C = 0.2 ma; R S =2kΩ; f = 10 Hz to 15.7 khz V CE = 5 V; I C = 0.2 ma; R S =2kΩ; f = 1 khz; B = 200 Hz Per device h FE1 /h FE2 h FE matching V CE = 5 V; I C = 2 ma V BE1 V BE2 V BE matching V CE = 5 V; I C = 2 ma V BEsat decreases by about 1.7 mv/k with increasing temperature. [2] V BE decreases by about 2 mv/k with increasing temperature. [3] The smaller of the two values is taken as the numerator. [4] The smaller of the two values is subtracted from the larger value. - 1.6 - db - 3.1 - db [3] 0.9 1 - [4] - - 2 mv Product data sheet Rev. 05 27 June 2006 5 of 15

0.20 I C (A) 0.16 0.12 I B (ma) = 2.5 2.25 2.0 1.75 1.5 1.25 1.0 0.75 006aaa540 600 h FE 400 (1) (2) 006aaa541 0.08 0.04 0.5 0.25 200 (3) 0 0 2 4 6 8 10 V CE (V) 0 10 2 10 1 1 10 10 2 10 3 I C (ma) Fig 1. T amb =25 C Collector current as a function of collector-emitter voltage; typical values Fig 2. V CE = 5 V (1) T amb = 100 C (2) T amb =25 C (3) T amb = 55 C DC current gain as a function of collector current; typical values 1.3 V BEsat (V) 1.1 006aaa542 10 V CEsat (V) 006aaa543 0.9 (1) 1 0.7 (2) 0.5 (3) 10 1 (1) (2) (3) 0.3 Fig 3. 0.1 10 1 1 10 10 2 10 3 I C (ma) I C /I B =20 (1) T amb = 55 C (2) T amb =25 C (3) T amb = 100 C Base-emitter saturation voltage as a function of collector current; typical values Fig 4. 10 2 10 1 1 10 10 2 10 3 I C (ma) I C /I B =20 (1) T amb = 100 C (2) T amb =25 C (3) T amb = 55 C Collector-emitter saturation voltage as a function of collector current; typical values Product data sheet Rev. 05 27 June 2006 6 of 15

1 006aaa544 10 3 006aaa545 V BE (V) 0.8 f T (MHz) 10 2 0.6 0.4 10 1 1 10 10 2 10 3 I C (ma) 10 1 10 10 2 I C (ma) V CE = 5 V; T amb =25 C V CE = 5 V; T amb =25 C Fig 5. Base-emitter voltage as a function of collector current; typical values Fig 6. Transition frequency as a function of collector current; typical values 8 006aaa546 15 006aaa547 C c (pf) 6 C e (pf) 13 11 4 9 2 7 0 0 2 4 6 8 10 V CB (V) 5 0 2 4 6 V EB (V) f = 1 MHz; T amb =25 C f = 1 MHz; T amb =25 C Fig 7. Collector capacitance as a function of collector-base voltage; typical values Fig 8. Emitter capacitance as a function of emitter-base voltage; typical values Product data sheet Rev. 05 27 June 2006 7 of 15

8. Application information V V CC OUT1 OUT2 R1 IN1 TR1 TR2 IN2 l out TR1 TR2 V+ 006aaa524 006aaa526 Fig 9. Current mirror Fig 10. Differential amplifier 9. Package outline 1.7 1.5 0.6 0.5 2.2 1.8 1.1 0.8 6 5 4 6 5 4 0.45 0.15 1.7 1.5 1.3 1.1 pin 1 index 0.3 0.1 2.2 2.0 1.35 1.15 pin 1 index 1 2 3 0.5 1 0.27 0.17 0.18 0.08 Dimensions in mm 04-11-08 Dimensions in mm 1 2 3 0.3 0.65 0.2 1.3 0.25 0.10 04-11-08 Fig 11. Package outline SOT666 Fig 12. Package outline SOT363 (SC-88) 3.1 2.7 1.1 0.9 6 5 4 0.6 0.2 3.0 2.5 1.7 1.3 pin 1 index Dimensions in mm 1 2 3 0.95 1.9 0.40 0.25 0.26 0.10 04-11-08 Fig 13. Package outline SOT457 (SC-74) Product data sheet Rev. 05 27 June 2006 8 of 15

10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package Description Packing quantity 3000 4000 8000 10000 BCM857BV SOT666 2 mm pitch, 8 mm tape and reel - - -315-4 mm pitch, 8 mm tape and reel - -115 - - BCM857BS SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 - - -165 BCM857DS SOT457 4 mm pitch, 8 mm tape and reel; T1 [2] -115 - - -135 4 mm pitch, 8 mm tape and reel; T2 [3] -125 - - -165 For further information and the availability of packing methods, see Section 14. [2] T1: normal taping [3] T2: reverse taping Product data sheet Rev. 05 27 June 2006 9 of 15

11. Soldering 2.75 2.45 2.10 1.60 0.15 (4 ) 0.40 (6 ) 0.55 2.00 1.70 1.00 0.30 (2 ) (2 ) 0.375 (4 ) 1.20 2.20 2.50 0.075 solder lands solder resist placement area occupied area Dimensions in mm Reflow soldering is the only recommended soldering method. Fig 14. Reflow soldering footprint SOT666 2.65 0.60 (2 ) solder lands 2.35 0.40 (2 ) 0.90 2.10 solder paste solder resist 0.50 (4 ) occupied area Dimensions in mm 0.50 (4 ) 1.20 2.40 sot363 Fig 15. Reflow soldering footprint SOT363 (SC-88) Product data sheet Rev. 05 27 June 2006 10 of 15

5.25 4.50 0.30 1.00 4.00 solder lands solder resist occupied area 1.15 3.75 transport direction during soldering Dimensions in mm sot363 Fig 16. Wave soldering footprint SOT363 (SC-88) 3.45 1.95 3.30 0.95 2.825 0.45 0.55 solder lands solder resist occupied area solder paste 1.60 1.70 3.10 3.20 msc422 Dimensions in mm Fig 17. Reflow soldering footprint SOT457 (SC-74) Product data sheet Rev. 05 27 June 2006 11 of 15

5.30 solder lands solder resist 5.05 0.45 1.45 4.45 occupied area solder paste MSC423 1.40 4.30 Dimensions in mm Fig 18. Wave soldering footprint SOT457 (SC-74) Product data sheet Rev. 05 27 June 2006 12 of 15

12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes 20060627 Product data sheet - BCM857BS_DS_4 Modifications: Type number BCM857BV added Section 13 Legal information : updated BCM857BS_DS_4 20060216 Product data sheet - BCM857BS_DS_3 BCM857BS_DS_3 20060130 Product data sheet - BCM857BS_2 BCM857BS_2 20050411 Product data sheet - BCM857BS_1 BCM857BS_1 20040914 Product data sheet - - Product data sheet Rev. 05 27 June 2006 13 of 15

13. Legal information 13.1 Data sheet status Document status [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.semiconductors.philips.com. 13.2 Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. Philips Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local Philips Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General Information in this document is believed to be accurate and reliable. However, Philips Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes Philips Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use Philips Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a Philips Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. Philips Semiconductors accepts no liability for inclusion and/or use of Philips Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale Philips Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.semiconductors.philips.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by Philips Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com Product data sheet Rev. 05 27 June 2006 14 of 15

15. Contents 1 Product profile.......................... 1 1.1 General description...................... 1 1.2 Features.............................. 1 1.3 Applications........................... 1 1.4 Quick reference data..................... 1 2 Pinning information...................... 2 3 Ordering information..................... 2 4 Marking................................ 2 5 Limiting values.......................... 3 6 Thermal characteristics................... 3 7 Characteristics.......................... 4 8 Application information................... 8 9 Package outline......................... 8 10 Packing information...................... 9 11 Soldering............................. 10 12 Revision history........................ 13 13 Legal information....................... 14 13.1 Data sheet status...................... 14 13.2 Definitions............................ 14 13.3 Disclaimers........................... 14 13.4 Trademarks........................... 14 14 Contact information..................... 14 15 Contents.............................. 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. For more information, please visit: http://www.semiconductors.philips.com. For sales office addresses, email to: sales.addresses@www.semiconductors.philips.com. Date of release: 27 June 2006 Document identifier:

2024 © sciencedocbox.com Privacy Policy | Terms of Service | Feedback