Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Sensitive gate SCRs are easily triggered with microamps of current as furnished by sense coils, proximity switches, and microprocessors. Features & Benefits junctions to 6 V 2 A Main Features Symbol Value Unit I T(RMS) 1.5 A V DRM /V RRM 4 to 6 V Applications Typical applications are capacitive discharge systems for strobe lights and gas engine ignition. Also controls for power tools, home/brown goods and white goods appliances. I GT 2 μa Schematic Symbol A K 1.5A SCRs G Absolute Maximum Ratings Sensitive SCRs Symbol Parameter Test Conditions Value Unit I T(RMS) RMS on-state current T C = 4 C 1.5 A I TSM Peak non-repetitive surge current single half cycle; f = 5Hz; (initial) = 25 C single half cycle; f = 6Hz; (initial) = 25 C 2 I 2 t I 2 t Value for fusing t p = 8.3 ms 1.6 A 2 s di/dt Critical rate of rise of on-state current f = 6 Hz ; = 11 C 5 A/μs I GM Peak gate current = 11 C 1 A P G(AV) Average gate power dissipation = 11 C.1 W T stg Storage temperature range -4 to 15 C Operating junction temperature range -4 to 11 C 16 A 193
Electrical Characteristics ( = 25 C, unless otherwise specified) Symbol Test Conditions Value Unit I GT MAX. 2 μa V D = 6V; R L = V GT MAX..8 V dv/dt V D = V DRM ; R GK = 1kΩ 4V 4 MIN. 6V 3 V/μs V GD V D = V DRM ; R L = 3.3 k ; = 11 C MIN..25 V V GRM I GR = 1μA MIN. 6 V I H I T = 2mA (initial) MAX. 5 ma t q (1) MAX. 5 μs t gt I G = 2 x I GT ; PW = 15μs; I T = 3A TYP. 3.5 μs (1) I T =1A; t p =5μs; dv/dt=5v/μs; di/dt=-1a/μs Static Characteristics Symbol Test Conditions Value Unit V TM I T = 3A; t p = 38 μs MAX. 1.5 V I DRM / I RRM V DRM = V RRM = 25 C 4V 1 6V MAX. 2 μa = 11 C Thermal Resistances Symbol Parameter Value Unit R (J-C) Junction to case (AC) 5 C/W R (J-A) Junction to ambient 16 C/W 194
Figure 1: Normalized DC Gate Trigger Current vs. Junction Temperature Figure 2: Normalized DC Gate Trigger Voltage vs. Junction Temperature 4. 2. Ratio of I GT /I GT ( = 25 C) 3. 2. Ratio of V GT / V GT ( = 25 C) 1.5-4 -15 1 35 6 85 11 Junction Temperature ( ) -- ( C) -4-15 1 35 6 85 11 Junction Temperature ( ) -- ( C) Figure 3: Normalized DC Holding Current vs. Junction Temperature Figure 4: Normalized DC Latching Current vs. Junction Temperature 3. 3. Ratio of I H /I H ( = 25 C) 2.5 2. 1.5 Ratio of I L / I L ( = 25 C) 2.5 2. 1.5 1.5A SCRs -4-15 1 35 6 85 11 Junction Temperature ( ) -- ( C) -4-15 1 35 6 85 11 Junction Temperature ( ) -- ( C) Figure 5: On-State Current vs. On-State Voltage (Typical) Figure 6: Power Dissipation (Typical) vs. RMS On-State Current Instantaneous On-state Current (i T ) Amps 1 = 25 C 8 6 4 2.7.8.9 1.1 1.2 1.3 1.4 1.5 1.6 Instantaneous On-state Voltage (v T ) Volts Average On-State Power Dissipation [P D(AV) ] - (Watts) 1.5 1.5 RMS On-State Current [I T(RMS )] - (Amps) 195
Figure 7: Maximum Allowable Case Temperature vs. RMS On-State Current Figure 8: Maximum Allowable Case Temperature vs. Average On-State Current Maximum Allowable Case Temperature (T C ) - C 115 15 95 85 75 65 55 45 35 CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 18.2.4.6.8 1.2 1.4 1.6 1.8 RMS On-State Current [I T(RMS) ] - Amps Maximum Allowable Case Temperature (T C ) - C 115 15 95 85 75 65 55 45 35 CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 18.2.4.6.8 1.2 Average On-State Current [I T(AVE) ] - Amps Figure 9: Maximum Allowable Ambient Temperature vs. RMS On-State Current Figure 1: Maximum Allowable Ambient Temperature vs. Average On-State Current Maximum Allowable Ambient Temperature (T A ) - C 12 8 6 4 2 CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 18 FREE AIR RATING.2.4.6.8 RMS On-State Current [I T(RMS) ] - Amps Maximum Allowable Ambient Temperature (T A ) - C 12 8 6 4 2 CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: 18 FREE AIR RATING.1.2.3.4.6 Average On-State Current [I T(AVE) ] - Amps Figure 11: Peak Repetitive Capacitor Discharge Current Figure 12: Peak Repetitive Sinusoidal Pulse Current 18 18 16 14 12 8 6 4 2 1 1 16 14 12 8 6 4 2 1 1 196
Figure 13: Surge Peak On-State Current vs. Number of Cycles Peak Surge (Non-repetitive) On-state Current (I TSM ) Amps. 1 SUPPLY FREQUENCY: 6 Hz Sinusoidal LOAD: Resistive RMS On-State Current: [I T(RMS) ]: Maximum Rated Value at Specified Case Temperature Notes: 1. Gate control may be lost during and immediately following surge current interval. 2. Overload may not be repeated until junction temperature has returned to steady-state rated value..1 1 1 Surge Current Duration -- Full Cycles Figure 14: Simple Test Circuit for Gate Trigger Voltage and Current + 6V DC Reset Normally-closed Pushbutton V1 D.U.T. 1 k (1%) I GT I G IN41 V GT R1 Note: V1 V to 1 V dc meter V GT V to 1 V dc meter I G ma to 1 ma dc milliammeter R1 1 k potentiometer To measure gate trigger voltage and current, raise gate voltage (V GT ) until meter reading V1 drops from 6 V to 1 V. Gate trigger voltage is the reading on V GT just prior to V1 dropping. Gate trigger current I GT Can be computed from the relationship V GT IGT = I G - Amps 1.5A SCRs where I G is reading (in amperes) on meter just prior to V1 dropping Note: I GT may turn out to be a negative quantity (trigger current flows out from gate lead). If negative current occurs, I GT value is not a valid reading. Remove 1 k resistor and use I G as the more correct I GT value. This will occur on 12 μa gate products. 197
Temperature Teccor brand Thyristors Soldering Parameters Reflow Condition Pb Free assembly T P t P - Temperature Min (T s(min) ) 15 C Ramp-up Pre Heat - Temperature Max (T s(max) ) 2 C - Time (min to max) (t s ) 6 19 secs Average ramp up rate (Liquidus Temp) (T L ) to peak 5 C/second max T L T S(max) T S(min) Preheat t L Ramp-down T S(max) to T L - Ramp-up Rate 5 C/second max t S - Temperature (T L ) (Liquidus) 217 C Reflow - Temperature (t L ) 6 15 seconds Peak Temperature (T P ) 26 +/-5 C 25 time to peak temperature Time Time within 5 C of actual peak Temperature (t p ) 2 4 seconds Ramp-down Rate 5 C/second max Time 25 C to peak Temperature (T P ) 8 minutes Max. Do not exceed 28 C Physical Specifications Environmental Specifications Terminal Finish Body Material Lead Material Design Considerations % Matt Tin-plated/Pb-free Solder Dipped UL recognized epoxy meeting flammability classification 94V- Copper Alloy Careful selection of the correct device for the application s operating parameters and environment will go a long way toward extending the operating life of the Thyristor. Good design practice should limit the maximum continuous current through the main terminals to 75% of the device rating. Other ways to ensure long life for a power discrete semiconductor are proper heat sinking and selection of voltage ratings for worst case conditions. Overheating, overvoltage (including dv/dt), and surge currents are the main killers of semiconductors. Correct mounting, soldering, and forming of the leads also help protect against component damage. Test AC Blocking Temperature Cycling Temperature/ Humidity High Temp Storage Low-Temp Storage Thermal Shock Autoclave Resistance to Solder Heat Solderability Lead Bend Specifications and Conditions MIL-STD-75, M-14, Cond A Applied Peak AC voltage @ 11 C for 8 hours MIL-STD-75, M-151, cycles; -4 C to +15 C; 15-min dwell-time EIA / JEDEC, JESD22-A11 8 hours; 32V - DC: 85 C; 85% rel humidity MIL-STD-75, M-131, 8 hours; 15 C 8 hours; -4 C MIL-STD-75, M-156 1 cycles; C to C; 5-min dwelltime at each temperature; 1 sec (max) transfer time between temperature EIA / JEDEC, JESD22-A12 168 hours (121 C at 2 ATMs) and % R/H MIL-STD-75 Method 231 ANSI/J-STD-2, category 3, Test A MIL-STD-75, M-236 Cond E 198
Teccor brand Thyristors Dimensions TO-92 (E Package) Cathode / MT1 / PIN 1 Gate / PIN 2 E T C Measuring Point A B Anode / MT2 / PIN 3 Dimension Inches Millimeters Min Max Min Max A.176.196 4.47 4.98 B 12.7 D 95.15 2.41 2.67 E.15 3.81 F 46 54 1.16 1.37 G.135.145 3.43 3.68 H 88 96 2.23 2.44 J.176.186 4.47 4.73 K 88 96 2.23 2.44 L 13 19.33.48 M 13 17.33.43 M L F D K J H G All leads insulated from case. Case is electrically nonconductive. Product Selector Voltage Part Number 4V 6V 8V V Gate Sensitivity Type Package TCR22-6 X 2μA Sensitive SCR TO-92 TCR22-8 X 2μA Sensitive SCR TO-92 1.5A SCRs Note: x = Voltage Packing Options Part Number Marking Weight Packing Mode Base Quantity TCR22-x TCR22-x.19 g Bulk 2 TCR22-xRP TCR22-x.19 g Reel Pack 2 TCR22-xAP TCR22-x.19 g Ammo Pack 2 Note: x = Voltage Part Numbering System TCR 22 8 75 Part Marking System TO-92 (E Package) DEVICE TYPE TCR: SCR CURRENT RATING 22: 1.5A LEAD FORM DIMENSIONS xx: Lead Form Option VOLTAGE RATING 6: 4V 8: 6V TCR22-8 yxxxx 199
TO-92 (3-lead) Reel Pack (RP) Radial Leaded Specifications Meets all EIA-468-B 1994 Standards 1.6 (4).236 (6.) 2 () 98 (2.5) MAX 1.26 (32.).78 (18.).354 (9.) (12.7).1 (2.54) 14.17(36) MT1 / Cathode MT2 / Anode.2 (5.8) Gate.157 DIA (4.) Flat up 1.97 (5) Direction of Feed Dimensions are in inches (and millimeters). TO-92 (3-lead) Ammo Pack (AP) Radial Leaded Specifications Meets all EIA-468-B 1994 Standards 1.62 (41.2).78 (18.).236 (6.) 2 ().354 (9.) (12.7) Direction of Feed.1 (2.54) MT2 / Anode MT1 / Cathode.2 (5.8) Gate 98 (2.5) MAX.157 DIA (4.) Flat down 1.27 (32.2) 25 Devices per fold 1.85 (47.) 12.2 (31) 1.85 (47.) Dimensions are in inches (and millimeters). 13.3 (338.) 2