Small Signal Fast Switching Diode MECHANICAL DATA Case: SOD- Weight: approx.. mg Packaging codes/options: 8/K per " reel (8 mm tape), K/box 08/K per 7" reel (8 mm tape), K/box FEATURES Silicon epitaxial planar diode Fast switching diodes AEC-Q qualified Base P/N-E - RoHS-compliant, commercial grade Base P/N-HE - RoHS-compliant, AEC-Q qualified Material categorization: For definitions of compliance please see www.vishay.com/doc?999 PARTS TABLE PART ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS -E-08 or -E-8 -HE-08 or -HE-8 A Single diode Tape and reel ABSOLUTE MAXIMUM RATINGS (T amb = C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage V R 7 V Repetitive peak reverse voltage V RRM 0 V Average rectified current half wave rectification with resistive load () f 0 Hz I F(AV) ma t p < s I FSM 00 ma Surge forward current t p = μs I FSM A Power dissipation () P tot 0 mw THERMAL CHARACTERISTICS (T amb = C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air () R thja 7 K/W Junction temperature T j C Storage temperature range T stg - 6 to + C Operating temperature range T op - to + C Note () Valid provided that electrodes are kept at ambient temperature. Rev..7, 08-May- Document Number: 878 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?900
ELECTRICAL CHARACTERISTICS (T amb = C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage I F = ma V F V I F = 0 ma V F. V V R = 0 V I R na Leakage current V R = 7 V I R μa V R = 0 V I R 0 μa V R = 0 V, T J = C I R 0 μa Diode capacitance V F = V R = 0 V C D pf Voltage rise when switching ON Reverse recovery time Tested with 0 ma pulses, t p = 0. μs, rise time < 0 ns, f p = ( to 0) khz I F = ma, i R = ma, V R = 6 V, R L = 0 V fr. V t rr ns TYPICAL CHARACTERISTICS (T amb = C, unless otherwise specified) I F (ma) T j = 0 C T j = C - - 0 77 V F (V) P tot - Power Dissipation (mw) 0809 00 0 00 0 00 0 00 0 0 0 0 0 0 T amb - Ambient Temperature ( C) Fig. - Forward Characteristics Fig. - Admissible Power Dissipation vs. Ambient Temperature T j = C f = khz. T j = C f = MHz.0 R f (Ω) C D (V R ) C D (0 V) 0.9 0.8 0.7 78 - - I F (ma) 0 6 8 70 V R (V) Fig. - Dynamic Forward Resistance vs. Forward Current Fig. - Relative Capacitance vs. Reverse Voltage Rev..7, 08-May- Document Number: 878 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?900
I R (na) 7 0 T j ( C) V R = 0 V 0 00 Fig. - Leakage Current vs. Junction Temperature t P n = 0 T t 0. 0. 0. 0. - - - - - 7 t P (s) Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration I FRM (A) 0 I n = t P /T T = /f P I FRM Rev..7, 08-May- Document Number: 878 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?900
PACKAGE DIMENSIONS in millimeters (inches): SOD-. (0.0) (0.09) 0. (0.00) max. 0. (0.008) 0. (0.08) 0. (0.0) 0 to 8 0. (0.006) 0. (0.00) 0. (0.00) ref. Cathode bar Mounting Pad Layout.8 (0.). (0.0) 0.8 (0.0) 0.8 (0.0) 0.6 (0.06) 0. (0.08).8 (0.). (0.0).7 (0.067).0 (0.0). (0.098) 0.8 (0.0) Rev. - Date:. Sep. 009 Document no.: S8-V-9.0-00 () 7 Rev..7, 08-May- Document Number: 878 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?900
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