74VHC08 Quad 2-Input AND Gate

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74VHC08 Quad 2-Input AND Gate Features High Speed: t PD = 4.3ns (Typ.) at T A = 25 C High noise immunity: V NIH = V NIL = 28% V CC (Min.) Power down protection is provided on all inputs Low power dissipation: I CC = 2µA (Max.) @ T A = 25 C Low noise: V OLP = 0.8V (Max.) Pin and function compatible with 74HC08 General Description The VHC08 is an advanced high speed CMOS 2 Input AND Gate fabricated with silicon gate CMOS technology. It achieves the high-speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 4 stages including buffer output, which provide high noise immunity and stable output. An input protection circuit insures that 0V to 7V can be applied to the input pins without regard to the supply voltage. This device can be used to interface 5V to 3V systems and two supply systems such as battery backup. This circuit prevents device destruction due to mismatched supply and input voltages. Ordering Information Order Number Package Number Package Description 74VHC08M M14A 14-Lead Small Outline Integrated Circuit (SOIC), JEDEC MS-012, 0.150" Narrow 74VHC08SJ M14D 14-Lead Small Outline Package (SOP), EIAJ TYPE II, 5.3mm Wide 74VHC08MTC MTC14 14-Lead Thin Shrink Small Outline Package (TSSOP), JEDEC MO-153, 4.4mm Wide Device also available in Tape and Reel. Specify by appending suffix letter X to the ordering number. All packages are lead free per JEDEC: J-STD-020B standard. 1992 Semiconductor Components Industries, LLC. August-2017, Rev. 2 Publication Order Number: 74VHC08/D

Connection Diagram Pin Description Pin Names Description A n, B n Inputs O n Outputs Logic Symbol Truth Table IEEE/IEC A B O L L L L H L H L L H H H 2

Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Rating V CC Supply Voltage 0.5V to +7.0V V IN DC Input Voltage 0.5V to +7.0V V OUT DC Output Voltage 0.5V to V CC + 0.5V I IK Input Diode Current 20mA I OK Output Diode Current ±20mA I OUT DC Output Current ±25mA I CC DC V CC / GND Current ±50mA T STG Storage Temperature 65 C to +150 C T L Lead Temperature (Soldering, 10 seconds) 260 C Recommended Operating Conditions (1) The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. ON Semiconductor does not recommend exceeding them or designing to absolute maximum ratings. Symbol Parameter Rating V CC Supply Voltage 2.0V to +5.5V V IN Input Voltage 0V to +5.5V V OUT Output Voltage 0V to V CC T OPR Operating Temperature 40 C to +85 C t r, t f Input Rise and Fall Time, V CC = 3.3V ± 0.3V V CC = 5.0V ± 0.5V 0ns/V 100ns/V 0ns/V 20ns/V Note: 1. Unused inputs must be held HIGH or LOW. They may not float. 3

DC Electrical Characteristics T A = 40 C to T A = 25 C +85 C Symbol Parameter V CC (V) Conditions Min. Typ. Max. Min. Max. Units V IH HIGH Level Input 2.0 1.50 1.50 V Voltage 3.0 5.5 0.7 x V CC 0.7 x V CC V IL LOW Level Input 2.0 0.50 0.50 V Voltage 3.0 5.5 0.3 x V CC 0.3 x V CC V OH V OL I IN I CC HIGH Level Output Voltage LOW Level Output Voltage Input Leakage Current Quiescent Supply Current 0.1 0.1 2.0 V IN = V IH I OH = 50µA 1.9 2.0 1.9 V 3.0 or V IL 2.9 3.0 2.9 4.5 4.4 4.5 4.4 3.0 I OH = 4mA 2.58 2.48 4.5 I OH = 8mA 3.94 3.80 2.0 V IN = V IH I OL = 50µA 0.0 V 3.0 or V IL 0.0 0.1 0.1 4.5 0.0 0.1 0.1 3.0 I OL = 4mA 0.36 0.44 4.5 I OL = 8mA 0.36 0.44 0 5.5 V IN = 5.5V or GND ±0.1 ±1.0 µa 5.5 V IN = V CC or GND 2.0 20.0 µa Noise Characteristics T A = 25 C Symbol Parameter V CC (V) Conditions Typ. Limits Units V (2) OLP Quiet Output Maximum Dynamic V OL 5.0 C L = 50pF 0.3 0.8 V V OLV (2) V IHD (2) V ILD 2) Quiet Output Minimum Dynamic V OL 5.0 C L = 50pF 0.3 0.8 V Minimum HIGH Level 5.0 C L = 50pF 3.5 V Dynamic Input Voltage Maximum LOW Level 5.0 C L = 50pF 1.5 V Dynamic Input Voltage Note: 2. Parameter guaranteed by design. 4

AC Electrical Characteristics T A = 40 C T A = 25 C to +85 C Symbol Parameter V CC (V) Conditions Min. Typ. Max. Min. Max. Units t PHL, t PLH Propagation Delay 3.3 ± 0.3 C L = 15pF 6.2 8.8 1.0 10.5 ns C L = 50pF 8.7 12.3 1.0 14.0 5.0 ± 0.5 C L = 15pF 4.3 5.9 1.0 7.0 ns C L = 50pF 5.8 7.9 1.0 9.0 C IN Input Capacitance V CC = Open 4 10 10 pf C PD Power Dissipation Capacitance (3) 18 pf Note: 3. C PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: I CC (opr.) = C PD V CC f IN + I CC / 4 (per gate). 5

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