ESE319 Introduction to Microelectronics Bode Plot Review High Frequency BJT Model

Similar documents
CHAPTER.6 :TRANSISTOR FREQUENCY RESPONSE

ECE 255, Frequency Response

CE/CS Amplifier Response at High Frequencies

Refinements to Incremental Transistor Model

Homework Assignment 08

55:041 Electronic Circuits The University of Iowa Fall Exam 2

I. Frequency Response of Voltage Amplifiers

Assignment 3 ELEC 312/Winter 12 R.Raut, Ph.D.

ESE319 Introduction to Microelectronics. Feedback Basics

CHAPTER.4: Transistor at low frequencies

ESE319 Introduction to Microelectronics Common Emitter BJT Amplifier

Chapter 9 Frequency Response. PART C: High Frequency Response

EE105 Fall 2015 Microelectronic Devices and Circuits Frequency Response. Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH)

ECE-343 Test 2: Mar 21, :00-8:00, Closed Book. Name : SOLUTION

Multistage Amplifier Frequency Response

The Miller Approximation

Final Exam. 55:041 Electronic Circuits. The University of Iowa. Fall 2013.

ESE319 Introduction to Microelectronics. Feedback Basics

Electronic Circuits Summary

Frequency Response. Re ve jφ e jωt ( ) where v is the amplitude and φ is the phase of the sinusoidal signal v(t). ve jφ

Single-Time-Constant (STC) Circuits This lecture is given as a background that will be needed to determine the frequency response of the amplifiers.

KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 4 DC BIASING BJTS (CONT D II )

ECE 546 Lecture 11 MOS Amplifiers

ECE-342 Test 3: Nov 30, :00-8:00, Closed Book. Name : Solution

Electronics II. Midterm II

Electrical Circuits Lab Series RC Circuit Phasor Diagram

EE221 Circuits II. Chapter 14 Frequency Response

ECE-343 Test 1: Feb 10, :00-8:00pm, Closed Book. Name : SOLUTION

EE221 Circuits II. Chapter 14 Frequency Response

Frequency Dependent Aspects of Op-amps

Chapter 10 Feedback. PART C: Stability and Compensation

Homework Assignment 11

Basic Electronics. Introductory Lecture Course for. Technology and Instrumentation in Particle Physics Chicago, Illinois June 9-14, 2011

Solution: K m = R 1 = 10. From the original circuit, Z L1 = jωl 1 = j10 Ω. For the scaled circuit, L 1 = jk m ωl 1 = j10 10 = j100 Ω, Z L

Chapter 5. BJT AC Analysis

ECE137B Final Exam. Wednesday 6/8/2016, 7:30-10:30PM.

Exercise s = 1. cos 60 ± j sin 60 = 0.5 ± j 3/2. = s 2 + s + 1. (s + 1)(s 2 + s + 1) T(jω) = (1 + ω2 )(1 ω 2 ) 2 + ω 2 (1 + ω 2 )

IFB270 Advanced Electronic Circuits

Exact Analysis of a Common-Source MOSFET Amplifier

Sophomore Physics Laboratory (PH005/105)

CHAPTER 7 : BODE PLOTS AND GAIN ADJUSTMENTS COMPENSATION

ESE319 Introduction to Microelectronics. BJT Biasing Cont.

Electronic Circuits. Prof. Dr. Qiuting Huang Integrated Systems Laboratory

BJT Biasing Cont. & Small Signal Model

EE105 Fall 2014 Microelectronic Devices and Circuits

BJT Biasing Cont. & Small Signal Model

ECE3050 Assignment 7

Frequency Response part 2 (I&N Chap 12)

(Refer Slide Time: 1:41)

ECEN 326 Electronic Circuits

Homework Assignment 09

(Refer Slide Time: 1:49)

Bipolar junction transistors

Electronic Devices and Circuits Lecture 18 - Single Transistor Amplifier Stages - Outline Announcements. Notes on Single Transistor Amplifiers

Philadelphia University Faculty of Engineering Communication and Electronics Engineering

As light level increases, resistance decreases. As temperature increases, resistance decreases. Voltage across capacitor increases with time LDR

Chapter 10: Sinusoids and Phasors

55:041 Electronic Circuits The University of Iowa Fall Final Exam

MODULE-4 RESONANCE CIRCUITS

Biasing BJTs CHAPTER OBJECTIVES 4.1 INTRODUCTION

(amperes) = (coulombs) (3.1) (seconds) Time varying current. (volts) =

R. W. Erickson. Department of Electrical, Computer, and Energy Engineering University of Colorado, Boulder

Chapter 9: Controller design

Mod. Sim. Dyn. Sys. Amplifiers page 1

IMPERIAL COLLEGE OF SCIENCE, TECHNOLOGY AND MEDICINE UNIVERSITY OF LONDON DEPARTMENT OF ELECTRICAL AND ELECTRONIC ENGINEERING EXAMINATIONS 2010

EE 3120 Electric Energy Systems Study Guide for Prerequisite Test Wednesday, Jan 18, pm, Room TBA

(Refer Slide Time: 1:22)

Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati

ECE137B Final Exam. There are 5 problems on this exam and you have 3 hours There are pages 1-19 in the exam: please make sure all are there.

55:041 Electronic Circuits

Engineering 1620 Spring 2011 Answers to Homework # 4 Biasing and Small Signal Properties

R. W. Erickson. Department of Electrical, Computer, and Energy Engineering University of Colorado, Boulder

Sinusoidal Steady State Analysis (AC Analysis) Part I

Device Physics: The Bipolar Transistor

0-2 Operations with Complex Numbers

Chapter 13 Small-Signal Modeling and Linear Amplification

Designing Information Devices and Systems II Fall 2018 Elad Alon and Miki Lustig Discussion 5A

0-2 Operations with Complex Numbers

Chapter 2 - DC Biasing - BJTs

1. (50 points, BJT curves & equivalent) For the 2N3904 =(npn) and the 2N3906 =(pnp)

ECE 3050A, Spring 2004 Page 1. FINAL EXAMINATION - SOLUTIONS (Average score = 78/100) R 2 = R 1 =

General Purpose Transistors

DESIGN MICROELECTRONICS ELCT 703 (W17) LECTURE 3: OP-AMP CMOS CIRCUIT. Dr. Eman Azab Assistant Professor Office: C

Chapter 8: Converter Transfer Functions

Mod. Sim. Dyn. Sys. Amplifiers page 1

3. Basic building blocks. Analog Design for CMOS VLSI Systems Franco Maloberti

Chapter 10: Sinusoidal Steady-State Analysis

ENGN3227 Analogue Electronics. Problem Sets V1.0. Dr. Salman Durrani

OPERATIONAL AMPLIFIER APPLICATIONS

ECE 304: Design Issues for Voltage Follower as Output Stage S&S Chapter 14, pp

Microelectronic Circuit Design 4th Edition Errata - Updated 4/4/14

Tutorial #4: Bias Point Analysis in Multisim

Dynamic circuits: Frequency domain analysis

Single Phase Parallel AC Circuits

Quick Review. ESE319 Introduction to Microelectronics. and Q1 = Q2, what is the value of V O-dm. If R C1 = R C2. s.t. R C1. Let Q1 = Q2 and R C1

ECE 304: Bipolar Capacitances E B C. r b β I b r O

Lecture 37: Frequency response. Context

ELECTRONIC SYSTEMS. Basic operational amplifier circuits. Electronic Systems - C3 13/05/ DDC Storey 1

6.012 Electronic Devices and Circuits Spring 2005

ECE Networks & Systems

Transcription:

Bode Plot Review High Frequency BJT Model 1

Logarithmic Frequency Response Plots (Bode Plots) Generic form of frequency response rational polynomial, where we substitute jω for s: H s=k sm a m 1 s m 1 a 1 sa 0 s n b n 1 s n 1 b 1 sb 0 HH(jω) j can represent an impedance, an admittance, or a gain transfer function. If we are lucky, we can factor each of the polynomials as a product of first degree terms: H s=k sz 1sz 2 sz m s p 1 s p 2 s p n 2

Logarithmic Frequency Response Plots (Bode Plots) Determination of a frequency response requires evaluating the complex number expression: H j =K j z 1 j z 2 j z m j p 1 j p 2 j p n Bode's approach was to simplify the calculations, using polar representation of the factors: H j =K z j 1 e j 1 j 1 e j 2 j 1 e j m 1 z 2.. z m z 1 z 2 z m p 1 p 2.. p n j p 1 1 e j 1 j p 2 1 e j 2 j p n 1 e j n where j 1 = z [ j 1 j k z k z k 1]= 2 11 z k k =tan 1 z k 3

Bode Plot cont. z k j z k 1 1 j 1 = z [ j 1 j k z k z k 1]= 2 1 z k =z k j z k 1 =2 z k j z k 1 z k k =tan 1 z k z k tan 1 z k 0 o =z k tan 1 z k =45 o zk tan 1 z k 90 o 4

Bode Plots cont. Ge j =K j z 1 e j 1 j z 2 e j 2 j z m e j m j p 1 e j 1 j p2 e j 2 j pn e j n We can separate magnitude and phase angle calculations: G = H j =K = 1 2 m 1 2 n m 1 n 1 z i p i j z 1 1 j z 2 1 j z m 1 j p 1 1 j p 2 1 j p n 1 where k =tan 1 z k k =tan 1 p k 5

G= H j =K dc j Bode Plots K dc =K z 1 1 j z 2 1 j z m 1 j p 1 1 j p 2 1 j p n 1 Where we define the dc gain, the value of the magnitude of H at ω =0= 0, as: m 1 n 1 z i p i 6

Logarithmic Frequency Response Plots (Bode Plots) G= H j =K dc j z 1 1 j z 2 1 j z m 1 j p 1 1 j p 2 1 j p n 1 Another simplification converts the magnitude computation from multiplication to addition by working with its logarithm (in decibels): m G = db 1 20 log 10 j n 1 z i 1 20 log 10 j p i 1 7

Logarithmic Frequency Response Plots (Bode Plots) m G = db 1 20 log 10 j n 1 z i 1 20 log 10 j p i 1 Let's calculate the frequency response for a simple transfer function and make some observations: H j =10 j 1 1 j 10 1 8

Simple Example Working with logs: H j =10 j 1 1 2 1 1 j =10 10 1 2 10 1 H db =20 log 10 10 20 log 10 j 1 1 20 log 10 j 10 1 Note: 1. if the coefficient of j, i.e. 0.1, then j 1 1 and log 10 j 1 =0. a a a 2. If the coefficient of j, i.e. 10, then j 1 and log 10 j 1 =log. a a a 10 a a 3. When = a, j 1 =2 and log 10 j 1 =0.15. a a 9

Simple Example H db =20 log 10 K dc 20 log 10 j 1 1 20 log j 10 1 Applying the approximation on the previous slide: 1 H db =20 log 10 K dc 110 H db =20 log 10 K dc 20 log 10 1 10 H db =20log 10 K dc 20log 10 1 20log 10 10 10

Scilab Simulation Kdc=10; //Example Bode Plot KdB= 20*log10(Kdc); omegaz=1; fz=omegaz/(2*%pi); omegap=10; fp=omegap/(2*%pi); f=0.01:0.01:100; magnum=sqrt((f/fz)^2 + 1); magden=sqrt((f/fp)^2 + 1); FreqResp=KdB+20*(log10(magnum)-log10(magden)); plot(f,freqresp) term1=kdb*sign(f); //Create constant array of length len(f) term2=max(0,20*log10(f/fz)); //Zero for f < fz; term3=min(0,-20*log10(f/fp)); //Zero for f < fp; BodePlot=term1+term2+term3; plot(f,bodeplot); err=bodeplot-freqresp; plot(f,err); 11

Scilab Results Bode plot Actual freq. response Error 12

Observations The / ωω ratio changes by 20 db for each order of magnitude x a change in frequency (20log 10 (10) = 20). Our rule of 10 scheme for using either 1, or / ωω for x a magnitude estimation is quite accurate. This why the Bode plot is called an asymptotic plot. We can plot a system transfer function, then position straight line segments of ±x 20 db/decade on the Bode plot. The intersection of the lines occurs at the break frequencies. 13

Bode Plot Used to Estimate Zeros & Poles 14

Bode Plot Superposition Directly from the Bode Plot! H j = j 20 1 j 100 1 j 500 1 20 Hz 100 Hz 500 Hz 15

Gain of 10 Amplifier Non-ideal Transistor Gain starts dropping at about 1MHz. Why! Because of internal transistor capacitances that we have ignored in our models. 16

Sketch of Typical Voltage Gain Response for a CE Amplifier A v db Low Frequency Band Due to external blocking and bypass capacitors Midband ALL capacitances are neglected 20 log 10 A v db 3 db High Frequency Band Due to BJT parasitic capacitors C π and C µ f L BW = f H f L f H f H GBP= A v BW f Hz (log scale) 17

High Frequency Small-signal Model r x C C Two capacitors and a resistor added. A base to emitter capacitor, C π A base to collector capacitor, C µ A resistor, r x, representing the base terminal resistance (r x << r π ) C = C 0 1 V CB V 0c m C =C de C je 0 1 V BE V 0 e 18 m

High Frequency Small-signal Model The internal capacitors on the transistor have a strong effect on circuit high frequency performance! They attenuate base signals, decreasing v be since their reactance approaches zero (short circuit) as frequency increases. As we will see later C µ is the principal cause of this gain loss at high frequencies. At the base C µ looks like a capacitor of value k C µ connected between base and emitter, where k > 1 and may be >> 1. This phenomenon is called the Miller Effect. 19

Frequency-dependent beta h fe short-circuit current The relationship i c = βi b does not apply at high frequencies f > f H! Using the relationship i c = f(v π ) find the new relationship between i b and i c. For i b (using phasor notation (I x & V x ) for frequency domain analysis): @ node B': = I 1 b sc r sc V where r x 0 (ignore r x ) 20

Frequency-dependent h fe or beta The ratio of the two equations: = I 1 b sc r sc V @ node C: I c = g m sc V (ignore r o ) Leads to a new relationship between the I b and I c : h fe = I c I b = g m sc 1 s C r s C 21

Frequency Response of h fe h fe = g m sc 1 s C r s C multiply N&D by r π h fe = g j C r m 1 j C C r factor N to isolate g m 1 j C g g m r h fe = m 1 j C C r g m = I C V T For small ω s r = V T I C = low : low C g m 1 1 10 and: low C C r 1 1 10 Note: low C C r = low C C g m low C g m We have: h fe =g m r = 22

Frequency Response of h fe cont. 1 j C g g m r h fe = m = 1 j 1 j C C r z 1 j g mr 1 j = 1 f f z j f f C C r =C C g m C g m => f z f h fe db 20log 10 f f z f Hence, the lower break frequency or 3dB frequency is f β f = 1 2C C r = g m 2C C the upper: f z = 1 2C / g m = g m 2C where f z 10 f 23

Frequency Response of h fe cont. Using Bode plot concepts, for the range where: h fe =g m r = For the range where: f f f z s.t. 1 j f / f z 1 We consider the frequency-dependent numerator term to be 1 and focus on the response of the denominator: h fe = g m r f 1 j f = f 1 j f 24

Frequency Response of h fe cont. Neglecting numerator term: h fe = g m r f 1 j f = f 1 j f And for f / f >>1 (but < f / f z ): h fe f = f f f Unity gain bandwidth: h fe =1 f f =1 f T = f f T = T 2 = f BJT unity-gain frequency or GBP 25

Frequency Response of h fe cont. =100 r =2500 C =12 pf C =2 pf g m =40 10 3 S = 1 = 1012 10 3 C C r 122 2.5 =28.57 106 rps f = 2 = 28.57 6.28 106 Hz=4.55 MHz f T = f =455 MHz z = g m = 40 10 3 10 12 C 2 Hz=20 10 9 rps f z = z 2 =3.18 109 Hz=3180 MHz 26

Scilab f T Plot //ft Bode Plot Beta=100; KdB= 20*log10(Beta); fz=3180; fp=4.55; f= 1:1:10000; term1=kdb*sign(f); //Constant array of len(f) term2=max(0,20*log10(f/fz)); //Zero for f < fz; term3=min(0,-20*log10(f/fp)); //Zero for f < fp; BodePlot=term1+term2+term3; plot(f,bodeplot); 27

h fe Bode Plot (db) f T 28

Multisim Simulation v-pi I c I b ms v-pi Insert 1 ohm resistors we want to measure a current ratio. h fe = I c = g m s C I b 1 sc r C 29

Simulation Results Low frequency h fe Unity Gain frequency about 440 MHz. 30