DISCRETE SEMICONDUCTORS DATA SHEET 1/3 page (Datasheet) M3D054 Supersedes data of April 1996 1996 Sep 17
FEATURES Small hermetically sealed glass SMD package Switching speed: max. 50 ns General application Continuous reverse voltage: max. 50 V, 100 V, 150 V and 200 V respectively Repetitive peak reverse voltage: max. 60 V, 120 V, 200 V and 250 V respectively Repetitive peak forward current: max. 625 ma. DESCRIPTION The are switching diodes fabricated in planar technology, and encapsulated in small hermetically sealed glass SOD80C SMD packages. handbook, 4 columns k a MAM061 APPLICATIONS Switching in industrial equipment e.g. oscilloscopes, digital voltmeters and video output stages in colour television. Cathode indicated by green band. Fig.1 Simplified outline (SOD80C) and symbol. 1996 Sep 17 2
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V RRM repetitive peak reverse voltage BAV100 60 V BAV101 120 V BAV102 200 V BAV103 250 V V R continuous reverse voltage BAV100 50 V BAV101 100 V BAV102 150 V BAV103 200 V I F continuous forward current see Fig.2; note 1 250 ma I FRM repetitive peak forward current 625 ma I FSM non-repetitive peak forward current square wave; T j =25 C prior to surge; see Fig.4 t=1µs 9 A t = 100 µs 3 A t=1s 1 A P tot total power dissipation T amb =25 C; note 1 400 mw T stg storage temperature 65 +175 C T j junction temperature 175 C Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 17 3
ELECTRICAL CHARACTERISTICS T j =25 C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V F forward voltage see Fig.3 I F = 100 ma 1.0 V I F = 200 ma 1.25 V I R reverse current see Fig.5 BAV100 V R =50V 100 na V R = 50 V; T j = 150 C 100 µa BAV101 V R = 100 V 100 na V R = 100 V; T j = 150 C 100 µa BAV102 V R = 150 V 100 na V R = 150 V; T j = 150 C 100 µa BAV103 V R = 200 V 100 na V R = 200 V; T j = 150 C 100 µa C d diode capacitance f = 1 MHz; V R = 0; see Fig.6 5 pf t rr reverse recovery time when switched from I F = 30 ma to I R = 30 ma; R L = 100 Ω; measured at I R = 3 ma; see Fig.8 50 ns THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT R th j-tp thermal resistance from junction to tie-point 300 K/W R th j-a thermal resistance from junction to ambient note 1 375 K/W Note 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 17 4
GRAPHICAL DATA 300 MBH278 600 MBG459 I F (ma) I F (ma) 200 400 (1) (2) (3) 100 200 Device mounted on an FR4 printed-circuit board. Fig.2 0 0 100 T 200 amb ( o C) Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 0 0 1 V 2 F (V) (1) T j = 150 C; typical values. (2) T j =25 C; typical values. (3) T j =25 C; maximum values. Forward current as a function of forward voltage. 10 2 handbook, full pagewidth MBG703 I FSM (A) 10 1 10 1 1 10 10 2 10 3 t p (µs) 10 4 Based on square wave currents. T j =25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 17 5
10 3 I R (µa) 10 2 MGD009 1.6 C d (pf) 1.4 MGD005 10 1.2 1 10 1 1.0 10 2 0 100 T j ( o C) 200 0.8 0 10 20 V R (V) V R =V Rmax. Solid line; maximum values. Dotted line; typical values. f = 1 MHz; T j =25 C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 300 MBG700 V R (V) 200 (1) (2) 100 (3) (4) 0 0 100 T amb ( o C) 200 (1) BAV103. (2) BAV102. (3) BAV101. (4) BAV100. Fig.7 Maximum permissible continuous reverse voltage as a function of ambient temperature. 1996 Sep 17 6
handbook, full pagewidth R S = 50 Ω I F D.U.T. SAMPLING OSCILLOSCOPE tr 10% t p t I F t rr t V = V R I F x R S R i = 50 Ω MGA881 V R 90% (1) input signal output signal (1) I R = 1 ma. Fig.8 Reverse recovery voltage test circuit and waveforms. 1996 Sep 17 7
PACKAGE OUTLINE handbook, full pagewidth 1.60 O 1.45 0.3 0.3 3.7 3.3 MBA390-2 Dimensions in mm. Fig.9 SOD80C. DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Sep 17 8