Generalized SiGe HBT Event Rate Predictions Using MRED

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Generalized SiGe HBT Event Rate Predictions Using MRED Jonathan A. Pellish, R. A. Reed, A. K. Sutton, R.!A.!Weller, M. A. Carts, P. W. Marshall, C.!J.!Marshall, R. Krithivasan, J. D. Cressler, M.!H.!Mendenhall, R. D. Schrimpf, K. M. Warren, B.!D.!Sierawski, and G.!F.!Niu jonathan.a.pellish@vanderbilt.edu

Preview Background Review radiation response in behavior in SiGe HBTs NASA NEPP Review 15 NOV 2007 2

Preview Background Review radiation response in behavior in SiGe HBTs Modeling Use physical device structures from broadbeam tests Develop generalized radiation response model Broadbeam data, microbeam data, TCAD simulations Employ MRED to calculate energy deposition NASA NEPP Review 15 NOV 2007 3

Preview Background Review radiation response in behavior in SiGe HBTs Modeling Use physical device structures from broadbeam tests Develop generalized radiation response model Broadbeam data, microbeam data, TCAD simulations Employ MRED to calculate energy deposition Results Calibrated to event cross section data (! 1 Gbit/s) Calculated event rates for GEO and LEO orbits NASA NEPP Review 15 NOV 2007 4

Errors in High-Speed Digital Devices R. Krithivasan, et al., IEEE Trans. Nucl. Sci., vol. 50, p. 2126, Dec. 2003. Error Intervals (Events) Bit Errors " SEU = # Error Intervals # Error intervals used for SEU cross section calculation NASA NEPP Review 15 NOV 2007 5

Device and Data Highlights Typical bulk SiGe HBT SEE-critical features Deep trench isolation Subcollector junction Substrate doping Observed non-irpp response at low LET Decreasing! SEU with increasing LET EFF Emitter Base Collector 7 µm p-type substrate: 8-10 "#cm TCAD Model: IBM 5AM SiGe HBT NASA NEPP Review 15 NOV 2007 6

Device and Data Highlights Typical bulk SiGe HBT SEE-critical features Deep trench isolation Subcollector junction Substrate doping Observed non-irpp response at low LET Decreasing! SEU with increasing LET EFF $ 1 Gbit/s RPP breakdown Data after P. W. Marshall, et al., IEEE Trans. Nucl. Sci., vol. 52, p. 2446, Dec. 2005. Geometry affects the SEU response of these devices NASA NEPP Review 15 NOV 2007 7

Ion-Deep-Trench Interaction Volts! 330 MeV 22 Ne 0.028 pc/µm 0 strike through emitter NASA NEPP Review 15 NOV 2007 8

Ion-Deep-Trench Interaction Volts 0.028 pc/µm! 330 MeV 22 Ne 0 strike through emitter! 330 MeV 22 Ne 0.028 pc/µm 60 strike right-to-left At grazing angles deep trench mitigates SEU response at larger values of Q crit important for RHBD devices NASA NEPP Review 15 NOV 2007 9

SiGe HBT SEU Data Redefined Shift register data Baseline design A E = 0.5 % 1.0 µm 2 RHBD design A E = 0.5 % 2.5 µm 2 Removed RPP corrections cos(") Normal-incident LETs of 2.8, 8.3, and 53!MeV#cm 2 /mg Open = Baseline Solid = RHBD Data after P. W. Marshall, et al., IEEE Trans. Nucl. Sci., vol. 52, p. 2446, Dec. 2005. Decreasing trend at low LET not accounted for by IRPP model NASA NEPP Review 15 NOV 2007 10

Transition from GDSII to 3-D Use Synopsys TCAD tool suite to convert layout Directly imported into MRED for event generation All subsequent simulations use real GDSII layout information NASA NEPP Review 15 NOV 2007 11

Generalized SiGe HBT Model Model provides good approximation to initial conditions, time-evolution Total charge collected is weighted sum Q coll = # i " i Q DL Area =! broadbeam K. M. Warren, et al., IEEE Electron Device Lett., vol. 28, p.!180, Feb. 2007. Same volume structure works for all SiGe HBT technologies simulated Area =! broadbeam Area =! broadbeam 3-Step Process NASA NEPP Review 15 NOV 2007 12

Generalized SiGe HBT Model Model provides good approximation to initial conditions, time-evolution Total charge collected is weighted sum Note: No overlaps Q coll = # i " i Q DL & 0.75 K. M. Warren, et al., IEEE Electron Device Lett., vol. 28, p.!180, Feb. 2007. Same volume structure works for all SiGe HBT technologies simulated & 0.05 & 0.3 Assign weights to volumes NASA NEPP Review 15 NOV 2007 13

Generalized SiGe HBT Model Model provides good approximation to initial conditions, time-evolution Total charge collected is weighted sum Q coll = # i " i Q DL K. M. Warren, et al., IEEE Electron Device Lett., vol. 28, p.!180, Feb. 2007. Same volume structure works for all SiGe HBT technologies simulated Note: No overlaps & 0.05 & 0.3 & 0.75 Area =! broadbeam Adjust Thickness NASA NEPP Review 15 NOV 2007 14

Calibrate to Heavy Ion Data Open = Data Solid = Simulation Q crit = 0.13 pc IBM 5AM SiGe HBT Baseline Design Data after P. W. Marshall, et al., IEEE Trans. Nucl. Sci., vol. 52, p. 2446, Dec. 2005. NASA NEPP Review 15 NOV 2007 15

Calibrate to Heavy Ion Data Open = Data Solid = Simulation Open = Data Solid = Simulation Q crit = 0.13 pc Q crit = 0.26 pc IBM 5AM SiGe HBT Baseline Design IBM 5AM SiGe HBT RHBD Design Data after P. W. Marshall, et al., IEEE Trans. Nucl. Sci., vol. 52, p. 2446, Dec. 2005. Same sensitive volume model produces required trends NASA NEPP Review 15 NOV 2007 16

Simulation Compared to Proton Data No adjustable parameters Change particle, energy Different mechanism Direct ionization Nuclear reactions New Experimental Data Open = Data Solid = Simulation Basis for LEO rate calculation in addition to GCR rate calculation Large proton flux component For protons, no further calibration necessary NASA NEPP Review 15 NOV 2007 17

Rate Calculations GCR CREME96 spectra Reverse-integrated rate curve (") Evaluated at Q crit from broadbeam calibration Baseline = 0.13 pc RHBD = 0.26 pc Rate curve for RHBD higher than baseline Lower evaluated rate due to # Q crit Larger size of RHBD device defeats hardening in GCR NASA NEPP Review 15 NOV 2007 18

Rate Calculations LEO CREME96 spectra Reverse-integrated rate curve (") Evaluated at Q crit from broadbeam calibration Baseline = 0.13 pc RHBD = 0.26 pc Rate curve for RHBD higher than baseline Lower evaluated rate due to # Q crit Due to reduced heavy ion flux at LEO, better benefits with RHBD NASA NEPP Review 15 NOV 2007 19

Conclusions Ion interactions with deep trench isolation result in! SEU rolloff for devices with high Q crit Well-studied technology used to develop generalized approach and provide event rates Linear combination of weighted sensitive volumes User-defined orbits No well-behaved data, no Weibull, no CREME96 Approach works for CMOS too (already done) Shortfalls: 1.) model cannot predict burst errors, and 2.) event rates are time-independent NASA NEPP Review 15 NOV 2007 20

Present Status and Future Work This work presented at 2007 NSREC SiGe HBT event rate calculations to appear in December 2007 TNS NASA NEPP Review 15 NOV 2007 21

Present Status and Future Work This work presented at 2007 NSREC SiGe HBT event rate calculations to appear in December 2007 TNS TCAD simulation transient calibration Look for more details in afternoon presentation Moving Single-Event Mechanism Testing and Analysis into the Time-Domain Continued utilization of previous SiGe HBT data IBM Ph.D. Fellowship support Complete Ph.D. fall 2008 NASA NEPP Review 15 NOV 2007 22

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