Fast Switching Diode Features 600V Emitter Controlled technology Fast recovery Soft switching Low reverse recovery charge Low forward voltage Easy paralleling Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Qualified according to JEDEC for target applications Product Summary V RRM 600 V I F 45 V F 1.5 V T jmax 175 C Type Package Ordering Code IDP45E60 PG-TO220-2 - Marking D45E60 Pin 1 PIN 2 PIN 3 C - Maximum Ratings, at T j = 25 C, unless otherwise specified Parameter Symbol Value Unit Repetitive peak peak reverse reverse voltage voltage V RRM V R R M 600 600 V V Continuous Continous forward current current I F T C = =25 C 25 C T C = =90 C 90 C I F 71 71 47 47 Surge non repetitive forward current Surge non repetitive forward current T C = 25 C, t p = ms, sine halfwave I FSM I F S M 162 162 T C =25 C, t p = ms, sine halfwave Maximum repetitive forward current T Maximum repetitive forward current C = 25 C, t p limited by t j,max, D = 0.5 T C =25 C, t p limited by T jmax, D=0.5 Power dissipation TPower C = 25 C dissipation T C = 90 C T C =25 C I FRM I F R M 111.5 111.5 P tot P t o t 187 W 187 6 Operating T C =90 C junction temperature T j -40 +175 6 Storage Operating temperature and storage temperature T j, T s t g stg -55...+175-55...+150 C C Soldering temperature T S T 260 C 1.6mm wavesoldering, (0.063 in.) 1.6mm from (0.063 case for in.) from s S 260 case for s Rev.2.5 Page 1
Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case R thjc - - 0.8 K/W Thermal resistance, junction - ambient, leaded R thj - - 62 SMD version, device on PCB: @ min. footprint R thj - - 62 @ 6 cm 2 cooling area 1) - 35 - Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Reverse leakage current I R μ V R =600V, T j =25 C - - 50 V R =600V, T j =150 C Forward voltage drop I F =45, T j =25 C I F =45, T j =150 C V F - - 3000 V - 1.5 2-1.5-1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 μm thick) copper area for drain connection. PCB is vertical without blown air. Rev.2.5 Page 2
Electrical Characteristics, at T j = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Reverse recovery time t rr ns V R =400V, I F =45, di F /dt=00/μs, T j =25 C - 140 - V R =400V, I F =45, di F /dt=00/μs, T j =125 C V R =400V, I F =45, di F /dt=00/μs, T j =150 C Peak reverse current V R =400V, I F = 45, di F /dt=00/μs, T j =25 C V R =400V, I F =45, di F /dt=00/μs, T j =125 C V R =400V, I F =45, di F /dt=00/μs, T j =150 C Reverse recovery charge V R =400V, I F =45, di F /dt=00/μs, T j =25 C V R =400V, I F =45, di F /dt=00/μs, T j =125 C V R =400V, I F =45, di F /dt=00/μs, T j =150 C Reverse recovery softness factor V R =400V, I F =45, di F /dt=00/μs, T j =25 C V R =400V, I F =45, di F /dt=00/μs, T j =125 C V R =400V, I F =45, di F /dt=00/μs, T j =150 C - - 185 195 - - - 23 - - 28.1 - - 29 - nc - 1400 - - 2650 - - 2900 - S - 3.1 - - 4.2 - - 4.4 - Rev.2.5 Page 3
1 Power dissipation P tot = f (T C ) parameter: T j 175 C 195 W 165 2 Diode forward current I F = f(t C ) parameter: T j 175 C 80 Ptot 150 135 120 IF 60 50 5 90 40 75 30 60 45 20 30 15 0 25 50 75 0 125 C 175 0 25 50 75 0 125 C 175 T C T C 3 Typ. diode forward current I F = f (V F ) 4 Typ. diode forward voltage V F = f (T j ) 140 2.4 0-55 C 25 C 0 C 150 C V 2 90 IF VF 80 1.8 60 1.6 45 40 20 1.4 1.2 22,5 0 0 0.5 1 1.5 V 2.5 V F Rev.2.5 Page 4 1-60 -20 20 60 0 C 160 T j
5 Typ. reverse recovery time t rr = f (di F /dt) parameter: V R = 400V, T j = 125 C 450 6 Typ. reverse recovery charge Q rr =f(di F /dt) parameter: V R = 400V, T j = 125 C 4000 trr ns 350 300 90 45 22.5 Qrr nc 3000 2500 90 45 250 200 2000 22,5 150 1500 0 200 300 400 500 600 700 800 /μs 00 di F /dt 7 Typ. reverse recovery current I rr = f (di F /dt) parameter: V R = 400V, T j = 125 C 35 00 200 300 400 500 600 700 800 /μs 00 di F /dt 8 Typ. reverse recovery softness factor S = f(di F /dt) parameter: V R = 400V, T j = 125 C 8 Irr 25 90 45 22.5 S 7 6.5 6 90 20 5.5 45 15 5 4.5 22,5 4 3.5 5 200 300 400 500 600 700 800 /μs 00 di F /dt Rev.2.5 Page 5 3 200 300 400 500 600 700 800 /μs 00 di F /dt
9 Max. transient thermal impedance Z thjc = f (t p ) parameter : D = t p /T 1 K/W IDP45E60 0 ZthJC -1-2 -3 single pulse D = 0.50 0.20 0. 0.05 0.02 0.01-4 -7-6 -5-4 -3-2 s 0 t p Rev.2.5 Page 6
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Published by Infineon Technologies G 81726 Munich, Germany 81726 München, Germany 2009 Infineon Technologies G ll Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev.2.5 Page 8