In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Similar documents
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DATA SHEET. BC817DPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Aug 09.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DISCRETE SEMICONDUCTORS DATA SHEET. ok, halfpage M3D302. PMEM4020ND NPN transistor/schottky-diode module. Product data sheet 2003 Nov 10

DATA SHEET. PMEM4010ND NPN transistor/schottky diode module DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Oct 28.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DATA SHEET. PBSS4540Z 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 14.

DATA SHEET. PBSS5350D 50 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 13.

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 12

DATA SHEET. BC369 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Nov 20.

DATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01.

DATA SHEET. BCP69 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Nov 15.

DATA SHEET. BC846; BC847; BC848 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Feb 04

DATA SHEET. BC846W; BC847W; BC848W NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 23

DATA SHEET. PEMD48; PUMD48 NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS

DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Apr 09

DATA SHEET. PBSS4250X 50 V, 2 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Jun 17

65 V, 100 ma NPN/PNP general-purpose transistor. Table 1. Product overview Type number Package NPN/NPN PNP/PNP Nexperia JEITA

150 V, 2 A NPN high-voltage low V CEsat (BISS) transistor

DATA SHEET. PBSS4480X 80 V, 4 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2004 Aug 5

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

NPN/PNP transistor pair connected as push-pull driver in a SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

DATA SHEET. PH2369 NPN switching transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Oct 11.

DISCRETE SEMICONDUCTORS DATA SHEET. PMBT3906 PNP switching transistor. Product specification Supersedes data of 1999 Apr 27.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

BCM857BV; BCM857BS; BCM857DS

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DISCRETE SEMICONDUCTORS DATA SHEET. PMMT591A PNP BISS transistor. Product specification Supersedes data of 2001 Jun 11.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using

Silicon N-channel dual gate MOS-FET IMPORTANT NOTICE. use

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

60 V, 0.3 A N-channel Trench MOSFET

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

N-channel TrenchMOS logic level FET

PSMN004-60B. N-channel TrenchMOS SiliconMAX standard level FET. High frequency computer motherboard DC-to-DC convertors

PSMN B. N-channel TrenchMOS SiliconMAX standard level FET. High frequency computer motherboard DC-to-DC convertors

N-channel TrenchMOS standard level FET. Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance

PHD/PHP36N03LT. 1. Product profile. 2. Pinning information. N-channel TrenchMOS logic level FET. 1.1 General description. 1.

DISCRETE SEMICONDUCTORS DATA SHEET M3D071. BAT74 Schottky barrier double diode. Product specification Supersedes data of 1996 Mar 19.

PSMN005-75B. N-channel TrenchMOS SiliconMAX standard level FET. High frequency computer motherboard DC-to-DC convertors

N-channel TrenchMOS standard level FET. High noise immunity due to high gate threshold voltage

DATA SHEET. BSS192 P-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jun 20

N-channel TrenchMOS standard level FET. Higher operating power due to low thermal resistance Low conduction losses due to low on-state resistance

PHB108NQ03LT. N-channel TrenchMOS logic level FET

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.

PSMN006-20K. N-channel TrenchMOS SiliconMAX ultra low level FET

DATA SHEET. BSN254; BSN254A N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

PHP110NQ08T. N-channel TrenchMOS standard level FET

DATA SHEET. BSN304 N-channel enhancement mode vertical D-MOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jun 17

N-channel TrenchMOS logic level FET

BUK B. N-channel TrenchMOS logic level FET

PSMN4R3-30PL. N-channel 30 V 4.3 mω logic level MOSFET. High efficiency due to low switching and conduction losses

N-channel TrenchMOS ultra low level FET. Higher operating power due to low thermal resistance Interfaces directly with low voltage gate drivers

BUK A. N-channel TrenchMOS standard level FET

2N7002T. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.

PSMN4R5-40PS. N-channel 40 V 4.6 mω standard level MOSFET. High efficiency due to low switching and conduction losses

Dual rugged ultrafast rectifier diode, 20 A, 150 V. Ultrafast dual epitaxial rectifier diode in a SOT78 (TO-220AB) plastic package.

BUK B. N-channel TrenchMOS standard level FET

2N7002F. 1. Product profile. 2. Pinning information. N-channel TrenchMOS FET. 1.1 General description. 1.2 Features. 1.

PHT6N06T. 1. Product profile. 2. Pinning information. TrenchMOS standard level FET. 1.1 Description. 1.2 Features. 1.

DATA SHEET. PDTA114E series PNP resistor-equipped transistors; R1 = 10 kω, R2 = 10 kω DISCRETE SEMICONDUCTORS

N-channel TrenchMOS logic level FET

BUK9Y53-100B. N-channel TrenchMOS logic level FET. Table 1. Pinning Pin Description Simplified outline Symbol 1, 2, 3 source (S) 4 gate (G)

N-channel TrenchMOS standard level FET

BF545A; BF545B; BF545C

PSMN013-80YS. N-channel LFPAK 80 V 12.9 mω standard level MOSFET

PMV65XP. 1. Product profile. 2. Pinning information. P-channel TrenchMOS extremely low level FET. 1.1 General description. 1.

2-input EXCLUSIVE-OR gate

Temperature range Name Description Version XC7SET32GW 40 C to +125 C TSSOP5 plastic thin shrink small outline package; 5 leads; body width 1.

PSMN8R3-40YS. N-channel LFPAK 40 V 8.6 mω standard level MOSFET

PSMN2R6-40YS. N-channel LFPAK 40 V 2.8 mω standard level MOSFET

TrenchMOS ultra low level FET

74HC1G02; 74HCT1G02. The standard output currents are half those of the 74HC02 and 74HCT02.

74HC1GU04GV. 1. General description. 2. Features. 3. Ordering information. Marking. 5. Functional diagram. Inverter

74HC1G86; 74HCT1G86. 2-input EXCLUSIVE-OR gate. The standard output currents are half those of the 74HC/HCT86.

Transcription:

Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - NXP N.V. (year). All rights reserved or Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D32 PBSS424DPN 4 V low V CEsat NPN/PNP transistor 23 Feb 2

FEATURES Low collector-emitter saturation voltage V CEsat High collector current capability I C and I CM High collector current gain h FE at high I C High efficiency leading to reduced heat generation Reduced printed-circuit board area requirements. APPLICATIONS Power management: Complementary MOSFET driver Dual supply line switching. Peripheral driver: Half and full bridge motor drivers Multi-phase stepper motor driver. DESCRIPTION NPN/PNP low V CEsat transistor pair in a SOT457 (SC-74) plastic package. QUICK REFERENCE DATA SYMBOL V CEO PINNING PARAMETER emitter-collector voltage PIN DESCRIPTION 1, 4 emitter TR1; TR2 2, 5 base TR1; TR2 6, 3 collector TR1; TR2 MAX. UNIT NPN PNP 4 4 V I C collector current (DC) 1.35 1.1 A I CRP repetitive peak 2 2 A collector current I CM peak collector current 3 3 A R CEsat equivalent 2 26 mω on-resistance MARKING 6 5 4 6 5 4 TYPE NUMBER MARKING CODE PBSS424DPN M3 TR1 TR2 1 2 3 Top view MAM445 1 2 3 Fig.1 Simplified outline SOT457 (SC-74) and symbol. 23 Feb 2 2

LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 6134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor unless otherwise specified; for the PNP transistor with negative polarity V CBO collector-base voltage open emitter 4 V V CEO collector-emitter voltage open base 4 V V EBO emitter-base voltage open collector 5 V I C collector current (DC) NPN 1.35 A PNP 1.1 A I CRP repetitive peak collector current note 1 2 A I CM peak collector current single peak 3 A I B base current (DC) 3 ma I BM peak base current 1 A P tot total power dissipation T amb 25 C; note 2 37 mw Notes T amb 25 C; note 3 31 mw T amb 25 C; note 1 1.1 W T stg storage temperature 65 +15 C T j junction temperature 15 C T amb operating ambient temperature 65 +15 C Per device P tot total power dissipation T amb 25 C; note 2 6 mw 1. Operated under pulsed conditions: duty cycle δ 2%; pulse width tp 1 ms; mounting pad for collector standard footprint. 2. Device mounted on a printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm 2. 3. Device mounted on a printed-circuit board; single-sided copper; tinplated; standard footprint. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Per transistor R th j-a thermal resistance from junction to ambient in free air; note 1 34 K/W in free air; note 2 11 K/W Notes 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm 2. 2. Operated under pulsed conditions: pulse width t p 1 ms; duty cycle δ.2; mounting pad for collector standard footprint. 23 Feb 2 3

CHARACTERISTICS T amb = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor unless otherwise specified; for the PNP transistor with negative polarity I CBO collector-base cut-off current V CB = 4 V; I E = 1 na Note 1. Pulse test: t p 3 μs; δ.2. V CB = 4 V; I E = ; T j = 15 C 5 μa I CEO collector-emitter cut-off current V CE = 3 V; I B = 1 na I EBO emitter-base cut-off current V EB = 5 V; I C = 1 na h FE DC current gain V CE = 5 V; I C = 1 ma 3 f T transition frequency I C = 5 ma; V CE = 1 V; 15 MHz f = 1 MHz C c collector capacitance V CB = 1 V; I E = I e = ; f = 1 MHz 12 pf TR1 (NPN) h FE DC current gain V CE = 5 V; I C = 5 ma 3 9 V CE = 5 V; I C = 1 A 2 V CE = 5 V; I C = 2 A; note 1 75 V CEsat collector-emitter saturation voltage I C = 1 ma; I B = 1 ma 6 75 mv I C = 5 ma; I B = 5 ma 8 1 mv I C = 1 A; I B = 1 ma 15 2 mv I C = 2 A; I B = 2 ma; note 1 3 4 mv V BEsat base-emitter saturation voltage I C = 1 A; I B = 1 ma 1.2 V V BEon base-emitter turn-on voltage V CE = 5 V; I C = 1 A 1.1 V R CEsat equivalent on-resistance I C = 1 A; I B = 1 ma 2 mω TR2 (PNP) h FE DC current gain V CE = 5 V; I C = 1 ma 3 8 V CE = 5 V; I C = 5 ma 25 V CE = 5 V; I C = 1 A 16 V CE = 5 V; I C = 2 A; note 1 5 V CEsat saturation voltage I C = 1 ma; I B = 1 ma 9 12 mv I C = 5 ma; I B = 5 ma 1 145 mv I C = 1 A; I B = 1 ma 18 26 mv I C = 2 A; I B = 2 ma; note 1 4 53 mv V BEsat saturation voltage I C = 1 A; I B = 5 ma 1.1 V V BEon base-emitter turn-on voltage V CE = 5 V; I C = 1 A 1 V R CEsat equivalent on-resistance I C = 1 A; I B = 1 ma; note 1 26 mω 23 Feb 2 4

8 MHC471 1.2 MHC472 h FE 6 V BE (V).8 4 2.4 1 1 1 1 1 2 1 3 1 4 1 1 1 1 1 2 1 3 1 4 TR1 (NPN); V CE = 5 V. T amb = 15 C. T amb = 25 C. T amb = 55 C. TR1 (NPN); V CE = 5 V. T amb = 55 C. T amb = 25 C. T amb = 15 C. Fig.2 DC current gain as a function of collector current; typical values. Fig.3 Base-emitter voltage as a function of collector current; typical values. 1 3 MHC473 V CEsat (mv) 1.2 V BEsat (V) 1 MHC474 1 2.8.6.4 1 1 1 1 1 1 2 1 3 1 4 TR1 (NPN); I C /I B = 2. T amb = 15 C. T amb = 25 C. T amb = 55 C..2 1 1 1 1 TR1 (NPN); I C /I B = 2. T amb = 55 C. T amb = 25 C. T amb = 15 C. 1 2 1 3 1 4 Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.5 Base-emitter saturation voltage as a function of collector current; typical values. 23 Feb 2 5

2 I C (A) 1.6 1.2 (4) (5) (6) (7) (8) MHC475 1 3 R CEsat (Ω) 1 2 MHC476 (9) 1.8 (1).4 1.4.8 1.2 1.6 2 V CE (V) 1 1 1 1 1 1 1 2 1 3 1 4 TR1 (NPN); T amb = 25 C. I B = 3 ma. I B = 27 ma. I B = 24 ma. (4) I B = 21 ma. Fig.6 (5) I B = 18 ma. (6) I B = 15 ma. (7) I B = 12 ma. (8) I B = 9 ma. (9) I B = 6 ma. (1) I B = 3 ma. Collector current as a function of collector-emitter voltage; typical values. TR1 (NPN); I C /I B = 2. T amb = 15 C. T amb = 25 C. T amb = 55 C. Fig.7 Collector-emitter equivalent on-resistance as a function of collector current; typical values. 23 Feb 2 6

1 MHC464 1.2 MHC465 h FE 8 6 V BE (V).8 4.4 2 1 1 1 1 1 2 1 3 1 4 1 1 1 1 1 2 1 3 1 4 TR2 (PNP); V CE = 5 V. T amb = 15 C. T amb = 25 C. T amb = 55 C. TR2 (PNP); V CE = 5 V. T amb = 55 C. T amb = 25 C. T amb = 15 C. Fig.8 DC current gain as a function of collector current; typical values. Fig.9 Base-emitter voltage as a function of collector current; typical values. 1 3 V CEsat (mv) MHC466 1.2 V BEsat (V) 1 MHC467 1 2.8 1.6.4 1 1 1 1 1 1 2 1 3 1 4.2 1 1 1 1 1 2 1 3 1 4 TR2 (PNP); I C /I B = 2. T amb = 15 C. T amb = 25 C. T amb = 55 C. TR2 (PNP); I C /I B = 2. T amb = 55 C. T amb = 25 C. T amb = 15 C. Fig.1 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.11 Base-emitter saturation voltage as a function of collector current; typical values. 23 Feb 2 7

1.2 I C (A) (4) MHC468 2.4 I C (A) 2 (4) (5) MHC469.8 (5) (6) (7) (8) 1.6 1.2 (6) (7) (8) (9).4 (9).8 (1) (1).4.4.8 1.2 1.4 2 V CE (V).4.8 1.2 1.6 2 V CE (V) TR2 (PNP); T amb = 25 C. TR2 (PNP); T amb = 25 C. I B = 7 ma. I B = 6.3 ma. I B = 5.6 ma. (4) I B = 4.9 ma. (5) I B = 4.2 ma. (6) I B = 3.5 ma. (7) I B = 2.8 ma. (8) I B = 2.1 ma. (9) I B = 1.4 ma. (1) I B =.7 ma. I B = 5 ma. I B = 45 ma. I B = 4 ma. (4) I B = 35 ma. (5) I B = 3 ma. (6) I B = 25 ma. (7) I B = 2 ma. (8) I B = 15 ma. (9) I B = 1 ma. (1) I B = 5 ma. Fig.12 Collector current as a function of collector-emitter voltage; typical values. Fig.13 Collector current as a function of collector-emitter voltage; typical values. 23 Feb 2 8

1 3 R CEsat (Ω) MHC47 1 2 1 1 1 1 1 1 1 1 1 2 1 3 1 4 TR2 (PNP); I C /I B = 2. T amb = 15 C. T amb = 25 C. T amb = 55 C. Fig.14 Collector-emitter equivalent on-resistance as a function of collector current; typical values. 23 Feb 2 9

PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT457 D B E A X y H E v M A 6 5 4 Q pin 1 index A 1 2 3 A 1 c L p e b p w M B detail X 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e H E Lp Q v w y mm 1.1.9.1.13.4.25.26.1 3.1 2.7 1.7 1.3.95 3. 2.5.6.2.33.23.2.2.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT457 SC-74 97-2-28 1-5-4 23 Feb 2 1

DATA SHEET STATUS Notes DOCUMENT STATUS PRODUCT STATUS DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Production This document contains the product specification. 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 6134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 23 Feb 2 11

Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com NXP B.V. 29 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/1/pp12 Date of release: 23 Feb 2 Document order number: 9397 75 1783

2024 © sciencedocbox.com Privacy Policy | Terms of Service | Feedback