OptiMOS -P2 Power-Transistor Product Summary V DS - V R DS(on),max.6 mw I D -5 A Features P-channel - Logic Level - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 26 C peak reflow 175 C operating temperature Green Product (RoHS compliant) % Avalanche tested Intended for reverse battery protection Type Package Marking IPD5P4P4L-11 PG-TO252-3-313 4P4L11 Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D T C =25 C, V GS =-V 1) -5 A T C = C, V GS =-V 2) - Pulsed drain current 2) I D,pulse T C =25 C - Avalanche energy, single pulse E AS I D = -25A 18 mj Avalanche current, single pulse I AS - -5 A Gate source voltage V GS - ±16 3) V Power dissipation P tot T C =25 C 58 W Operating and storage temperature T j, T stg - -55... +175 C IEC climatic category; DIN IEC 68-1 - - 55/175/56 Rev. 1. page 1 6.8.
Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics 2) Thermal resistance, junction - case R thjc - - - 2.6 K/W SMD version, device on PCB R thja minimal footprint - - 62 6 cm 2 cooling area 4) - - Electrical characteristics, at T j =25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS =V, I D = -1mA - - - V Gate threshold voltage V GS(th) V DS =V GS, I D =-85µA -1.2-1.7-2.2 Zero gate voltage drain current I DSS V DS =-32V, V GS =V, T j =25 C - -.3-1 µa V DS =-32V, V GS =V, T j =125 C 2) - -7-7 Gate-source leakage current I GSS V GS =-16V, V DS =V - - - na Drain-source on-state resistance R DS(on) V GS =-4.5V, I D =-3A - 12.3 17.2 mw V GS =-V, I D =-5A - 8.2.6 Rev. 1. page 2 6.8.
Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics 2) Input capacitance C iss - 3 39 pf Output capacitance C oss V GS =V, V DS =-25V, f =1MHz - 1 1 Reverse transfer capacitance C rss - 37 74 Turn-on delay time t d(on) - 12 - ns Rise time t r V DD =-V, V GS =-V, I D =-5A, - 9 - Turn-off delay time t d(off) R G =3.5W - 46 - Fall time t f - 39 - Gate Charge Characteristics 2) Gate to source charge Q gs - 11 14 nc Gate to drain charge Q gd V DD =-32V, I D =-5A, - 8 16 Gate charge total Q g V GS = to -V - 45 59 Gate plateau voltage V plateau - -3.6 - V Reverse Diode Diode continous forward current 2) I S T C =25 C - - -5 A Diode pulse current 2) I S,pulse - - - Diode forward voltage V SD V GS =V, I F =-5A, T j =25 C Reverse recovery time 2) t rr V R =-V, I F =5A, di F /dt =-A/µs - -1-1.3 V - - ns Reverse recovery charge 2) Q rr - - 32 - nc 1) Current is limited by bondwire; with an R thjc = 2.6K/W the chip is able to carry 6A at 25 C. 2) Specified by design. Not subject to production test. 3) V GS =+5V/-16V according AEC; V GS =+16V for max 168h at T J =175 C 4) Device on mm x mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1. page 3 6.8.
1 Power dissipation 2 Drain current P tot = f(t C ); V GS -6V I D = f(t C ); V GS -6V 7 6 6 5 5 P tot [W] 3 3 5 15 5 15 T C [ C] T C [ C] 3 Safe operating area 4 Max. transient thermal impedance I D = f(v DS ); T C = 25 C; D = Z thjc = f(t p ) parameter: t p parameter: D =t p /T 1 1 µs µs µs 1 ms Z thjc [K/W] -1.5.1.5.1-2 single pulse 1.1 1 -V DS [V] -3-6 -5-4 -3-2 -1 t p [s] Rev. 1. page 4 6.8.
5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D = f(v DS ); T j = 25 C R DS(on) = f(i D ); T j = 25 C parameter: V GS parameter: V GS 18 - V -5 V -4V 16-4.5V 1-4.5 V 15-5V 1 8-4 V R DS(on) [mw] 6-3.5 V -V -3 V 1 2 3 4 5 6 -V DS [V] 5 3 6 9 1 15 18 7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance I D = f(v GS ); V DS = -6V R DS(on) = f(t j ); I D = -5A; V GS = -V parameter: T j 16 14 1 13 1 12 8 6 R DS(on) [mw] 11 9 8 175 C 7 25 C -55 C 6 1 2 3 4 5 -V GS [V] 5-6 - 6 1 18 T j [ C] Rev. 1. page 5 6.8.
9 Typ. gate threshold voltage Typ. capacitances V GS(th) = f(t j ); V GS = V DS C = f(v DS ); V GS = V; f = 1 MHz parameter: I D 2.5 4 2.25 Ciss 2 Coss -V GS(th) [V] 1.75 1.5-85µA -85µA C [pf] 3 1.25 2 1 Crss.75.5-6 - 6 1 18 T j [ C] 1 5 15 25 3 -V DS [V] 11 Typical forward diode characteristicis 12 Drain-source breakdown voltage IF = f(v SD ) V BR(DSS) = f(t j ); I D = -1mA parameter: T j 3 45 44 43 2 42 -I F [A] -V BR(DSS) [V] 41 39 1 175 C25 C 38 37 36.2.4.6.8 1 1.2 1.4 1.6 -V SD [V] 35-6 - 6 1 18 T j [ C] Rev. 1. page 6 6.8.
13 Typ. gate charge 14 Gate charge waveforms V GS = f(q gate ); I D = -5A pulsed parameter: V DD 9 8 V GS Q g 7 8V 32V 6 -V GS [V] 5 4 V gs(th) 3 2 1 Q g(th) Q sw Q gate 3 5 Q gs Q gd Q gate [nc] Rev. 1. page 7 6.8.
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Revision History Version Revision 1. Date Changes 6/8/ Final Data Sheet Rev. 1. page 9 6.8.