IAP accelerator based facility for simulation and studies of radiation induced defects in materials V.Storizhko Institute of Applied Physics, National Academy of Sciences of Ukraine IAEA Technical Meeting Accelerator Simulation and Theoretical Modelling of Radiation Effects Kharkov, 9-13 June 2008
Radiation damage is inherently multiscale with interacting phenomena ranging from ps to decades and nm to m B.D.Wirth, UC-Brkeley
2 MeV scanning ion microprobe
2 MV electrostatic accelerator
Element Hydrogen Lithium Boron Carbon Тable 1 Detection limits and lateral resolution some resonant nuclear reactions Nuclear reaction 1 H( 15 N,αγ) 15 C 1 H( 19 F,αγ) 16 O 7 Li(p,γ) 8 Be 10 B(α.p) 13 C 11 B(p,γ) 12 C 11 B(p,α) 8 Be 12 C(p,γ) 13 N 13 C(p,γ) 14 N Resonance energy (kev) 6385 6421 441 1507 163 660 457 1748 Resonance width (ev) 6000 45000 12200 18000 5200 300000 31700 135 Resolution (nm) 4 23 220 30 130 50 650 330 Detection limits (1:10 6 ) 30 100 0,15 5000 50 100 Nitrogen 14 N(α,γ) 18 F 1531 600 2 Oxygen 18 O(p,γ) 15 N 898 633 2200 2100 5 20 5 Fluorine 19 F(p,γ) 16 O 340 2300 25 0,1 Natrium 23 Na(p,γ) 20 Ne 592 600 15 0,5 Magnesium 24 Mg(p,γ) 25 Al 223 <32 0,6 Aluminium 27 Al(p,γ) 28 Si 405 992 87 105 1,1 10 100 Phosphorus 31 P(p,γ) 28 Si 31 P(p,γ) 32 S 1018 1147 <300 <160 10 100 50 Аrgon 40 Ar(p,γ) 41 K 1102 90 7 2000 Тitanium 48 Ti(p,γ) 49 V 1361 50 10 20 Chrome 52 Cr(p,γ) 53 Mn 1005 9 100
First tests of the scanning nuclear microprobe with a gauging grid electron microscopy data nuclear microprobe data
High-sensitivity HVEE isotope mass-spectrometer to be shipped to Ukraine in 2008. Commissioning is scheduled for 2008
Pelletron-6 accelerator-based system by NEC, USA Methods Type Ions Application Sensitivity Resolution RBS Standard 1-2 Mev He med., heavy 10 atppm 10nm Special med., heavy 0.1 atppm 50nm Special med., heavy 1000 atppm 0.1nm ERDA Standard 3 Mev He H 10 atppm 100nm Special 4.5 Mev Ne H 1000 atppm 0.5nm Special 1.5 Mev Ar Light atoms 1000 atppm 0.2nm NRA Standard p, d, 3He Light atoms 10-1000 atppm 100nm PIXE Standard 3MeV p, He No light atoms 1-10 atppm none
5 MeV ion/positron accelerator-based analytical facility of NEC manufacture, USA, transferred to IAP NASU from Max-Planck Institute (Stuttgart, Germany). Construction of the laboratory building and facility commissioning trials are scheduled for 2007-2008
Laser isotope mass-spectrometer with coordinate-sensitive detector Інтенсивність Интенсивность Intensity 300 250 Образец Sample Зразок M М161,часть M spectrum частина спектра of спектру Sn+ олова and Sn и Sb+ сурьмы + та isotopes Sb + ізотопів 120Sn+ 200 150 100 122Sn+ 50 0 119Sn+ 121Sb+ 123Sb+ 124Sn+ 0 100 200 300 400 С(Sn)=0,08%, C(Sb)=0,0024%, С(121Sb)=0,0014% канал channel
High-dose ion implanter Ion implanter of standard design is a DC accelerator with stepwise adjustment of the ion energy from 10 tо 170 кеv. Implanter performance data Ion beam energy -- 10-170 кеv Ion beam formation voltage-- 0-20 кv Accelerating voltage range -- 0-150 кv Beam current in the acceptance chamber < 4 ма Accelerated ion masses -- 1-120 а.о.м. Removable ion sources - (gas source, metal-vapour source) Vacuum in acceptance chamber ~ 10-4 Pа Ion source life ~ 50 hours Power consumption ~ 20 кwt. Table 2. Ion current in acceptance chamber Ions H + He + N + N 2 + O + O 2 + Ar + 11 B + F + Ion current 1mA 0.5 ma 0.5 ma 0.5 ma 0.5 ma 0.5 ma 0.6 ma 200 mka 50 mka
High-intensity ion source testing equipment Performance data - ion energy - 60 kev - ion current - 400 ma - vacuum in the chamber - 10-4 Pa - evacuation rate 1000 l/s The testing equipment is provided with multiwatt power supplies of the ion source, high-voltage terminal water-cooling system, diagnostics facilities.
High-frequency magnetron sputtering facility Experiments Experiments are performed on a synthesis of metal, oxide and nitride coatings used as targets for incident ion beams and in ion-implantation doping. A technology has been developed and used for the preparation of ZnO 0,2 0,6 µm thick films on sapphire substrates by high-frequency reactive sputtering of a Zn target. The film exhibit one peak (002) in XRD spectra and 85 % transparency in the 0,2 0,6 µm spectrum range. The films have the grain size of ~60 nm and surface roughness 5 nm.
EL-60 based facility for electron beam deposition Performance data - electron energy - 60 kev - electron current - 1-1000 ma - vacuum in the chamber - 10-4 Pa - evacuation rate 2500 l/s
Physical characteristics of some existing pulsed H-injectors and H-sources Martin Stockli / The Development of High-Current and High Duty-Factor H-Injectors // Presented LINAC-06, Knoxville, TN, August 2006. Facility Source type Current (ma) Pulse length (ms) Rep Rate (Hz) Extraction Aperture Ø (mm) Normalized Emittance (rms) Cs Energy (kev) DESY RF Multicusp ext. RF 30 40 0.15 8 6.5 0.26 (90%) 0.43 (90%) No 38 Fermi magnetron ~ 60 0.1 15 0.9 x 10 0.2 / 0.3 Yes ~ 20 BNL magnetron ~ 100 0.6 6.66 10 2 ~ 0.4 Yes 35 ISIS Penning ~ 60 ~ 35 0.5 50 0.6 x 10 ~ 1 ~ 0.15 / 0.29 Yes 35 LANSCE Surface converter ~ 18 {40} 1 120 10 {8} ~ 0.14 (98%) { ~0.3 (98%)} Yes 80 SNS Multicusp Int. RF 33 41 1.23 60 10 7 0.18 / 0.26(100%) 0.25/0.31(100%) Yes 65 JEARI Multicusp 60 72 1 50 8 ~ 0.21 (100%) Yes 70 SUMY Inverse magnetron ~ 50 0.1-1 1-10 5.4 No ~ 60