IPB2N25N3 G OptiMOS TM 3 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Product Summary V DS 25 V R DS(on),max 2 mw I D 64 A 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC 1) for target application Halogen-free according to IEC61249-2-21 Ideal for high-frequency switching and synchronous rectification Type IPB2N25N3 G Package PG-TO263-3 PG-TO22-3 PG-TO262-3 Marking 2N25N 2N25N 2N25N Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D T C =25 C 64 A T C =1 C 46 Pulsed drain current 2) I D,pulse T C =25 C 256 Avalanche energy, single pulse E AS I D =47 A, R GS =25 W 32 mj Reverse diode dv /dt dv /dt 1 kv/µs Gate source voltage V GS ±2 V Power dissipation P tot T C =25 C 3 W Operating and storage temperature T j, T stg -55... 175 C IEC climatic category; DIN IEC 68-1 55/175/56 1) J-STD2 and JESD22 2) See figure 3 Rev. 2.4 page 1 211-7-14
IPB2N25N3 G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thjc - -.5 K/W Thermal resistance, junction - ambient R thja minimal footprint - - 62 6 cm2 cooling area 3) - - 4 Electrical characteristics, at T j =25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS = V, I D =1 ma 25 - - V Gate threshold voltage V GS(th) V DS =V GS, I D =27 µa 2 3 4 Zero gate voltage drain current I DSS V DS =2 V, V GS = V, T j =25 C V DS =2 V, V GS = V, T j =125 C -.1 1 µa - 1 1 Gate-source leakage current I GSS V GS =2 V, V DS = V - 1 1 na Drain-source on-state resistance R DS(on) V GS =1 V, I D =64 A - 17.5 2 mw Gate resistance R G - 2.4 - W Transconductance g fs V DS >2 I D R DS(on)max, I D =64 A 61 122 - S 3) Device on 4 mm x 4 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.4 page 2 211-7-14
IPB2N25N3 G Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 534 71 pf Output capacitance C oss V GS = V, V DS =1 V, f =1 MHz - 297 395 Reverse transfer capacitance C rss - 4 - Turn-on delay time t d(on) - 18 - ns Rise time t r V DD =1 V, V GS =1 V, I D =25 A, - 2 - Turn-off delay time t d(off) R G =1.6 W - 45 - Fall time t f - 12 - Gate Charge Characteristics 4) Gate to source charge Q gs - 22 - nc Gate to drain charge Q gd - 7 - Switching charge Q sw V DD =1 V, I D =25 A, V GS = to 1 V - 13 - Gate charge total Q g - 64 86 Gate plateau voltage V plateau - 4.2 - V Output charge Q oss V DD =1 V, V GS = V - 135 179 nc Reverse Diode Diode continous forward current I S T C =25 C - - 64 A Diode pulse current I S,pulse - - 256 Diode forward voltage V SD V GS = V, I F =64 A, T j =25 C - 1 1.2 V Reverse recovery time t rr V R =1 V, I F =25 A, - 17 - ns Reverse recovery charge Q rr di F /dt =1 A/µs - 78 - nc 4) See figure 16 for gate charge parameter definition Rev. 2.4 page 3 211-7-14
I D [A] Z thjc [K/W] P tot [W] I D [A] IPB2N25N3 G 1 Power dissipation 2 Drain current P tot =f(t C ) I D =f(t C ); V GS 1 V 32 7 28 6 24 5 2 4 16 3 12 8 2 4 1 5 1 15 2 T C [ C] 5 1 15 2 T C [ C] 3 Safe operating area 4 Max. transient thermal impedance I D =f(v DS ); T C =25 C; D = Z thjc =f(t p ) parameter: t p parameter: D =t p /T 1 3 1 1 µs 1 2 1 µs 1 µs.5 1 ms 1 1 1-1.2 1 ms.1 DC.5 1.2.1 1-1 1-1 1 1 1 1 2 1 3 V DS [V] single pulse 1-2 1-5 1-4 1-3 1-2 1-1 1 t p [s] Rev. 2.4 page 4 211-7-14
I D [A] g fs [S] I D [A] R DS(on) [mw] IPB2N25N3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D =f(v DS ); T j =25 C R DS(on) =f(i D ); T j =25 C parameter: V GS parameter: V GS 15 1 V 3 125 7 V 25 4.5 V 5 V 1 2 5 V 7 V 1 V 75 15 5 4.5 V 1 25 5 1 2 3 4 5 V DS [V] 2 4 6 8 1 12 14 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D =f(v GS ); V DS >2 I D R DS(on)max g fs =f(i D ); T j =25 C parameter: T j 14 18 12 16 14 1 12 8 1 6 8 4 6 4 2 175 C 25 C 2 2 4 6 8 V GS [V] 25 5 75 1 125 I D [A] Rev. 2.4 page 5 211-7-14
C [pf] I F [A] R DS(on) [mw] V GS(th) [V] IPB2N25N3 G 9 Drain-source on-state resistance 1 Typ. gate threshold voltage R DS(on) =f(t j ); I D =64 A; V GS =1 V V GS(th) =f(t j ); V GS =V DS parameter: I D 7 4 6 3.5 5 3 27 µa 4 2.5 27 µa 2 3 2 98% typ 1.5 1 1.5-6 -2 2 6 1 14 18 T j [ C] -6-2 2 6 1 14 18 T j [ C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(v DS ); V GS = V; f =1 MHz I F =f(v SD ) parameter: T j 1 4 Ciss 1 3 1 3 Coss 1 2 175 C 1 2 25 C, 98% 175 C, 98% 1 1 Crss 1 1 25 C 1 4 8 12 16.5 1 1.5 2 V DS [V] V SD [V] Rev. 2.4 page 6 211-7-14
V BR(DSS) [V] I AS [A] V GS [V] IPB2N25N3 G 13 Avalanche characteristics 14 Typ. gate charge I AS =f(t AV ); R GS =25 W parameter: T j(start) 1 V GS =f(q gate ); I D =25 A pulsed parameter: V DD 1 8 25 C 2 V 1 C 6 125 V 1 125 C 5 V 4 2 1 1 1 1 1 t AV [µs] 2 4 6 8 Q gate [nc] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS) =f(t j ); I D =1 ma 29 V GS 28 Q g 27 26 25 V gs(th) 24 23 Q g(th) Q sw Q gate 22-6 -2 2 6 1 14 18 T j [ C] Q gs Q gd Rev. 2.4 page 7 211-7-14
IPB2N25N3 G PG-TO22-3: Outline Rev. 2.4 page 8 211-7-14
IPB2N25N3 G PG-TO263-3: Outline Rev. 2.4 page 9 211-7-14
IPB2N25N3 G PG-TO262-3: Outline Rev. 2.4 page 1 211-7-14
IPB2N25N3 G Published by Infineon Technologies AG 81726 Munich, Germany 29 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.4 page 11 211-7-14