S-57P1 S Series FOR AUTOMOTIVE 150 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC. Features. Applications.

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www.ablicinc.com FOR AUTOMOTIVE 150 C OPERATION HIGH-WITHSTAND VOLTAGE HIGH-SPEED BIPOLAR HALL EFFECT LATCH IC ABLIC Inc., 2015-2017 This IC, developed by CMOS technology, is a high-accuracy Hall effect latch IC that operates with high temperature and high-withstand voltage. The output voltage changes when this IC detects the intensity level of magnetic flux density and a polarity change. Using this IC with a magnet makes it possible to detect the rotation status in various devices. This IC includes a reverse voltage protection circuit and an output current limit circuit. High-density mounting is possible by using the small SOT-23-3S package. Due to its high-accuracy magnetic characteristics, this IC enables the user to reduce the operational variation in the system. ABLIC Inc. offers a "magnetic simulation service" that provides the ideal combination of magnets and our Hall effect ICs for customer systems. Our magnetic simulation service will reduce prototype production, development period and development costs. In addition, it will contribute to optimization of parts to realize high cost performance. For more information regarding our magnetic simulation service, contact our sales office. Caution This product can be used in vehicle equipment and in-vehicle equipment. Before using the product in the purpose, contact to ABLIC Inc. is indispensable. Features Pole detection: Output logic *1 : Output form: Magnetic sensitivity *1 : Chopping frequency: Output delay time: Power supply voltage range: Built-in regulator Built-in reverse voltage protection circuit Built-in output current limit circuit Operation temperature range: Lead-free (Sn 100%), halogen-free AEC-Q100 qualified *2 Bipolar latch V OUT = "L" at S pole detection V OUT = "H" at S pole detection Nch open-drain output B OP = 0.5 mt typ. B OP = 1.5 mt typ. B OP = 2.2 mt typ. B OP = 3.0 mt typ. f C = 500 khz typ. t D = 8.0 s typ. V DD = 2.7 V to 26.0 V Ta = 40C to 150C *1. The option can be selected. *2. Contact our sales office for details. Applications Automobile equipment Home appliance DC brushless motor Housing equipment Industrial equipment Package SOT-23-3S 1

Block Diagrams VDD Reverse voltage protection circuit OUT Regulator Chopping stabilized amplifier *1 VSS Output current limit circuit *1. Parasitic diode Figure 1 2

AEC-Q100 Qualified This IC supports AEC-Q100 for operation temperature grade 0. Contact our sales office for details of AEC-Q100 reliability specification. Product Name Structure 1. Product name S-57P1 N B x x S - M3T4 U Environmental code U: Lead-free (Sn 100%), halogen-free Package abbreviation and IC packing specifications *1 M3T4: SOT-23-3S, Tape Operation temperature S: Ta = 40C to 150C Magnetic sensitivity 9: B OP = 0.5 mt typ. 0: B OP = 1.5 mt typ. 8: B OP = 2.2 mt typ. 1: B OP = 3.0 mt typ. Output logic L: V OUT = "L" at S pole detection H: V OUT = "H" at S pole detection Pole detection B: Bipolar latch *1. Refer to the tape drawing. Output form N: Nch open-drain output 2. Package Table 1 Package Drawing Codes Package Name Dimension Tape Reel SOT-23-3S MP003-D-P-SD MP003-D-C-SD MP003-D-R-SD 3. Product name list Table 2 Product Name Output Form Pole Detection Output Logic Magnetic Sensitivity (B OP ) S-57P1NBL9S-M3T4U Nch open-drain output Bipolar latch V OUT = "L" at S pole detection 0.5 mt typ. S-57P1NBL0S-M3T4U Nch open-drain output Bipolar latch V OUT = "L" at S pole detection 1.5 mt typ. S-57P1NBL8S-M3T4U Nch open-drain output Bipolar latch V OUT = "L" at S pole detection 2.2 mt typ. S-57P1NBL1S-M3T4U Nch open-drain output Bipolar latch V OUT = "L" at S pole detection 3.0 mt typ. S-57P1NBH9S-M3T4U Nch open-drain output Bipolar latch V OUT = "H" at S pole detection 0.5 mt typ. S-57P1NBH0S-M3T4U Nch open-drain output Bipolar latch V OUT = "H" at S pole detection 1.5 mt typ. S-57P1NBH1S-M3T4U Nch open-drain output Bipolar latch V OUT = "H" at S pole detection 3.0 mt typ. Remark Please contact our sales office for products other than the above. 3

Pin Configuration 1. SOT-23-3S Top view 1 2 3 Table 3 Pin No. Symbol Description 1 VSS GND pin 2 VDD Power supply pin 3 OUT Output pin Figure 2 Absolute Maximum Ratings Table 4 (Ta = 25C unless otherwise specified) Item Symbol Absolute Maximum Rating Unit Power supply voltage V DD V SS 28.0 to V SS 28.0 V Output current I OUT 20 ma Output voltage V OUT V SS 0.3 to V SS 28.0 V Junction temperature T j 40 to 170 C Operation ambient temperature T opr 40 to 150 C Storage temperature T stg 40 to 170 C Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical damage. These values must therefore not be exceeded under any conditions. Thermal Resistance Value Table 5 Item Symbol Condition Min. Typ. Max. Unit Junction-to-ambient thermal resistance *1 ja SOT-23-3S *1. Test environment: compliance with JEDEC STANDARD JESD51-2A Remark Refer to " Power Dissipation" and "Test Board" for details. Board A 200 C/W Board B 165 C/W Board C C/W Board D C/W Board E C/W 4

Electrical Characteristics Table 6 (Ta = 25C, V DD = 12.0 V, V SS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Power supply voltage V DD 2.7 12.0 26.0 V Current consumption I DD Average value 3.0 4.0 ma 1 Current consumption during reverse connection I DDREV V DD = 26.0 V 0.1 ma 1 Output voltage V OUT I OUT = 10 ma 0.4 V 2 Leakage current I LEAK Output transistor Nch, V OUT = 26.0 V 1 A 3 Output limit current I OM V OUT = 12.0 V 22 70 ma 3 Output delay time t D 8.0 s Chopping frequency f C 500 khz Start up time t PON 20 s 4 Output rise time t R C = 20 pf, R = 820 2.0 s 5 Output fall time t F C = 20 pf, R = 820 2.0 s 5 S pole Magnetic flux density applied to this IC (B) B OP 0 B RP N pole t D t F t D t R Output voltage (V OUT ) (Product with V OUT = "L" at S pole detection) 90% 10% t D t R t D t F Output voltage (V OUT ) (Product with V OUT = "H" at S pole detection) 90% 10% Figure 3 Operation Timing 5

Magnetic Characteristics 1. Product with B OP = 0.5 mt typ. Table 7 (Ta = 25C, V DD = 12.0 V, V SS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Operation point *1 S pole B OP 0.5 0.5 1.5 mt 4 Release point *2 N pole B RP 1.5 0.5 0.5 mt 4 Hysteresis width *3 B HYS B HYS = B OP B RP 1.0 mt 4 2. Product with B OP = 1.5 mt typ. Table 8 (Ta = 25C, V DD = 12.0 V, V SS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Operation point *1 S pole B OP 0.5 1.5 2.5 mt 4 Release point *2 N pole B RP 2.5 1.5 0.5 mt 4 Hysteresis width *3 B HYS B HYS = B OP B RP 3.0 mt 4 3. Product with B OP = 2.2 mt typ. Table 9 (Ta = 25C, V DD = 12.0 V, V SS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Operation point *1 S pole B OP 1.2 2.2 3.2 mt 4 Release point *2 N pole B RP 3.2 2.2 1.2 mt 4 Hysteresis width *3 B HYS B HYS = B OP B RP 4.4 mt 4 4. Product with B OP = 3.0 mt typ. Table 10 (Ta = 25C, V DD = 12.0 V, V SS = 0 V unless otherwise specified) Item Symbol Condition Min. Typ. Max. Unit Test Circuit Operation point *1 S pole B OP 2.0 3.0 4.0 mt 4 Release point *2 N pole B RP 4.0 3.0 2.0 mt 4 Hysteresis width *3 B HYS B HYS = B OP B RP 6.0 mt 4 *1. B OP : Operation point B OP is the value of magnetic flux density when the output voltage (V OUT ) changes after the magnetic flux density applied to this IC by the magnet (S pole) is increased (by moving the magnet closer). V OUT retains the status until a magnetic flux density of the N pole higher than B RP is applied. *2. B RP : Release point B RP is the value of magnetic flux density when the output voltage (V OUT ) changes after the magnetic flux density applied to this IC by the magnet (N pole) is increased (by moving the magnet closer). V OUT retains the status until a magnetic flux density of the S pole higher than B OP is applied. *3. B HYS : Hysteresis width B HYS is the difference of magnetic flux density between B OP and B RP. Remark The unit of magnetic density mt can be converted by using the formula 1 mt = 10 Gauss. 6

Test Circuits A VDD R 820 VDD S-57P1 OUT S Series VSS S-57P1 OUT S Series VSS V A Figure 4 Test Circuit 1 Figure 5 Test Circuit 2 VDD VDD R 820 S-57P1 OUT S Series VSS V A S-57P1 OUT S Series VSS V Figure 6 Test Circuit 3 Figure 7 Test Circuit 4 VDD S-57P1 OUT S Series VSS R 820 C 20 pf V Figure 8 Test Circuit 5 7

Standard Circuit C IN 0.1 F VDD S-57P1 S Series OUT VSS R 820 Figure 9 Caution The above connection diagram and constant will not guarantee successful operation. Perform thorough evaluation using the actual application to set the constant. 8

Operation 1. Direction of applied magnetic flux This IC detects the magnetic flux density which is vertical to the marking surface. Figure 10 shows the direction in which magnetic flux is being applied. N S Marking surface 2. Position of Hall sensor Figure 10 Figure 11 shows the position of Hall sensor. The center of this Hall sensor is located in the area indicated by a circle, which is in the center of a package as described below. The following also shows the distance (typ. value) between the marking surface and the chip surface of a package. Top view 1 The center of Hall sensor, in this 0.3 mm 2 3 0.315 mm (typ.) Figure 11 9

3. Basic operation This IC changes the output voltage (V OUT ) according to the level of the magnetic flux density (N pole or S pole) and a polarity change applied by a magnet. 3. 1 Product with V OUT = "L" at S pole detection When the magnetic flux density of the S pole perpendicular to the marking surface exceeds the operation point (B OP ) after the S pole of a magnet is moved closer to the marking surface of this IC, V OUT changes from "H" to "L". When the N pole of a magnet is moved closer to the marking surface of this IC and the magnetic flux density of the N pole is higher than the release point (B RP ), V OUT changes from "L" to "H". In case of B RP B B OP, V OUT retains the status. Figure 12 shows the relationship between the magnetic flux density and V OUT. V OUT B HYS H N pole B RP 0 B OP L S pole 3. 2 Product with V OUT = "H" at S pole detection Magnetic flux density (B) Figure 12 When the magnetic flux density of the S pole perpendicular to the marking surface exceeds B OP after the S pole of a magnet is moved closer to the marking surface of this IC, V OUT changes from "L" to "H". When the N pole of a magnet is moved closer to the marking surface of this IC and the magnetic flux density of the N pole is higher than B RP, V OUT changes from "H" to "L". In case of B RP B B OP, V OUT retains the status. Figure 13 shows the relationship between the magnetic flux density and V OUT. V OUT B HYS H N pole B RP 0 B OP L S pole Magnetic flux density (B) Figure 13 10

Precautions If the impedance of the power supply is high, the IC may malfunction due to a supply voltage drop caused by feedthrough current. Take care with the pattern wiring to ensure that the impedance of the power supply is low. Note that the IC may malfunction if the power supply voltage rapidly changes. When the IC is used under the environment where the power supply voltage rapidly changes, it is recommended to judge the output voltage of the IC by reading it multiple times. Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit. Although this IC has a built-in output current limit circuit, it may suffer physical damage such as product deterioration under the environment where the absolute maximum ratings are exceeded. Although this IC has a built-in reverse voltage protection circuit, it may suffer physical damage such as product deterioration under the environment where the absolute maximum ratings are exceeded. The application conditions for the power supply voltage, the pull-up voltage, and the pull-up resistor should not exceed the power dissipation. Large stress on this IC may affect on the magnetic characteristics. Avoid large stress which is caused by the handling during or after mounting the IC on a board. ABLIC Inc. claims no responsibility for any disputes arising out of or in connection with any infringement by products including this IC of patents owned by a third party. 11

Power Dissipation SOT-23-3S 1.0 Tj = 170C max. Power dissipation (PD) [W] 0.8 0.6 0.4 0.2 B A 0.0 0 25 50 75 100 125 150 175 Ambient temperature (Ta) [C] Board Power Dissipation (P D ) A 0.73 W B 0.88 W C D E 12

SOT-23-3/3S/5/6 Test Board (1) Board A IC Mount Area Item Specification Size [mm] 114.3 x 76.2 x t1.6 Material FR-4 Number of copper foil layer 2 1 Land pattern and wiring for testing: t0.070 2 - Copper foil layer [mm] 3-4 74.2 x 74.2 x t0.070 Thermal via - (2) Board B Item Specification Size [mm] 114.3 x 76.2 x t1.6 Material FR-4 Number of copper foil layer 4 1 Land pattern and wiring for testing: t0.070 2 74.2 x 74.2 x t0.035 Copper foil layer [mm] 3 74.2 x 74.2 x t0.035 4 74.2 x 74.2 x t0.070 Thermal via - No. SOT23x-A-Board-SD-2.0 ABLIC Inc.

Disclaimers (Handling Precautions) 1. All the information described herein (product data, specifications, figures, tables, programs, algorithms and application circuit examples, etc.) is current as of publishing date of this document and is subject to change without notice. 2. The circuit examples and the usages described herein are for reference only, and do not guarantee the success of any specific mass-production design. ABLIC Inc. is not responsible for damages caused by the reasons other than the products described herein (hereinafter "the products") or infringement of third-party intellectual property right and any other right due to the use of the information described herein. 3. ABLIC Inc. is not responsible for damages caused by the incorrect information described herein. 4. Be careful to use the products within their specified ranges. Pay special attention to the absolute maximum ratings, operation voltage range and electrical characteristics, etc. ABLIC Inc. is not responsible for damages caused by failures and / or accidents, etc. that occur due to the use of the products outside their specified ranges. 5. When using the products, confirm their applications, and the laws and regulations of the region or country where they are used and verify suitability, safety and other factors for the intended use. 6. When exporting the products, comply with the Foreign Exchange and Foreign Trade Act and all other export-related laws, and follow the required procedures. 7. The products must not be used or provided (exported) for the purposes of the development of weapons of mass destruction or military use. ABLIC Inc. is not responsible for any provision (export) to those whose purpose is to develop, manufacture, use or store nuclear, biological or chemical weapons, missiles, or other military use. 8. The products are not designed to be used as part of any device or equipment that may affect the human body, human life, or assets (such as medical equipment, disaster prevention systems, security systems, combustion control systems, infrastructure control systems, vehicle equipment, traffic systems, in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment), excluding when specified for in-vehicle use or other uses. Do not apply the products to the above listed devices and equipments without prior written permission by ABLIC Inc. Especially, the products cannot be used for life support devices, devices implanted in the human body and devices that directly affect human life, etc. Prior consultation with our sales office is required when considering the above uses. ABLIC Inc. is not responsible for damages caused by unauthorized or unspecified use of our products. 9. Semiconductor products may fail or malfunction with some probability. The user of the products should therefore take responsibility to give thorough consideration to safety design including redundancy, fire spread prevention measures, and malfunction prevention to prevent accidents causing injury or death, fires and social damage, etc. that may ensue from the products' failure or malfunction. The entire system must be sufficiently evaluated and applied on customer's own responsibility. 10. The products are not designed to be radiation-proof. The necessary radiation measures should be taken in the product design by the customer depending on the intended use. 11. The products do not affect human health under normal use. However, they contain chemical substances and heavy metals and should therefore not be put in the mouth. The fracture surfaces of wafers and chips may be sharp. Be careful when handling these with the bare hands to prevent injuries, etc. 12. When disposing of the products, comply with the laws and ordinances of the country or region where they are used. 13. The information described herein contains copyright information and know-how of ABLIC Inc. The information described herein does not convey any license under any intellectual property rights or any other rights belonging to ABLIC Inc. or a third party. Reproduction or copying of the information from this document or any part of this document described herein for the purpose of disclosing it to a third-party without the express permission of ABLIC Inc. is strictly prohibited. 14. For more details on the information described herein, contact our sales office. 2.0-2018.01 www.ablicinc.com