In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

Important notice Dear Customer, On 7 February 217 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/, use http://www.nexperia.com Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use salesaddresses@nexperia.com (email) Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on the version, as shown below: - NXP N.V. (year). All rights reserved or Koninklijke Philips Electronics N.V. (year). All rights reserved Should be replaced with: - Nexperia B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or telephone (details via salesaddresses@nexperia.com). Thank you for your cooperation and understanding, Kind regards, Team Nexperia

DISCRETE SEMICONDUCTORS DATA SHEET age M3D87 Supersedes data of 1997 Jun 23 21 Dec 11

FEATURES PINNING - SOT223 Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS PIN 1 gate 2 drain 3 source 4 drain DESCRIPTION Line current interruptor in telephone sets Relay, high-speed and line transformer drivers. 4 d DESCRIPTION in a SOT223 package. g 1 2 3 Top view MAM54 s Marking code. Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS drain-source voltage (DC) 3 V I D drain current (DC) 35 ma P tot total power dissipation T amb 25 C 1.5 W V GSO gate-source voltage open drain ±2 V R DSon drain-source on-state I D = 25 ma; V GS =1V 6 Ω resistance V GSoff gate-source cut-off voltage I D = 1 ma; V DS =V GS.8 2 V LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 6134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V DS drain-source voltage (DC) 3 V V GSO gate-source voltage (DC) open drain ±2 V I D drain current (DC) 35 ma I DM peak drain current 1.4 A P tot total power dissipation T amb 25 C; note 1 1.5 W T stg storage temperature 55 +15 C T j junction temperature 15 C Note 1. Device mounted on an epoxy printed-circuit board, 4 x 4 x 1.5 mm, mounting pad for the drain tab minimum 6 cm 2. 21 Dec 11 2

THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT R th j-a thermal resistance from junction to ambient; note 1 83.3 K/W Note 1. Device mounted on an epoxy printed-circuit board, 4 x 4 x 1.5 mm, mounting pad for the drain tab minimum 6 cm 2. STATIC CHARACTERISTICS T j = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V (BR)DSS drain-source breakdown voltage I D =1µA; V GS = 3 V I GSS gate-source leakage current V GS = ±2 V; V DS = ±1 na V GSth gate-source threshold voltage I D = 1 ma; V DS =V GS.8 2 V R DSon drain-source on-state resistance I D = 2 ma; V GS = 2.4 V 4.8 1 Ω I D = 25 ma; V GS =1V 3.7 6 Ω I DSS drain-source leakage current V DS = 24 V; V GS = 1 na Y fs transfer admittance I D = 25 ma; V DS = 25 V 2 69 ms C iss input capacitance V DS = 25 V; V GS = ; f = 1 MHz 1 12 pf C oss output capacitance V DS = 25 V; V GS = ; f = 1 MHz 21 3 pf C rss feedback capacitance V DS = 25 V; V GS = ; f = 1 MHz 1 15 pf Switching times (see Figs 2 and 3) t on turn-on time I D = 25 ma; V DD =5V; 6 1 ns V GS =to1v t off turn-off time I D = 25 ma; V DD = 5 V; V GS = 1 to V 46 6 ns 21 Dec 11 3

V DD = 5 V INPUT 9 % 1 % 9 % 1 V V 5 Ω I D OUTPUT 1 % MBB691 t on t off MBB692 Fig.2 Switching times test circuit. Fig.3 Input and output waveforms. 2 P tot (W) 1.5 MRC218 25 C (pf) 2 MLD765 15 1 1 C iss.5 5 5 1 15 2 T j ( C) C oss C rss 1 2 3 V DS (V) V GS = ; f = 1 MHz; T j =25 C. Fig.4 Power derating curve. Fig.5 Capacitance as a function of drain-source voltage; typical values. 21 Dec 11 4

1.2 V GS = 1 V I D (A) 5 V 4 V 3.5 V MLD766 1.2 I D (A) MLD767.8 3 V.8.4 2.5 V.4 2 V 4 8 12 V DS (V) 2 4 6 8 1 V GS (V) T j =25 C. V DS = 1 V; T j =25 C. Fig.6 Typical output characteristics. Fig.7 Typical transfer characteristics. 3 R DSon (Ω) V GS = 2 V 2.5 V 3 V 3.5 V MLD768 2 R DSon (Ω) 15 MLD769 2 1 1 4 V 5 V 1 V 1 1 1 I D (A) 1 5 2 4 6 8 1 V GS (V) T j =25 C. V DS = 1 mv; T j =25 C. Fig.8 Drain-source on-state resistance as a function of drain current; typical values. Fig.9 Drain-source on-state resistance as a function of gate-source voltage; typical values. 21 Dec 11 5

1 2 handbook, full pagewidth δ =.75 R th j-a (K/W).5.2 MRC221 1.1.5.2 1.1 P t p δ = T 1 1 1 5 1 4 1 3 1 2 1 1 1 t p T 1 1 2 1 3 t p (s) t Fig.1 Transient thermal resistance from junction to ambient as a function of pulse time. 1 I D (A) 1 1 1 1 2 P (1) DC t p δ = T MLD773 t p = 1 µs 1 µs 1 ms 1 ms 1 ms 1s 1 3 1 t p T t 1 1 2 V DS (V) 1 3 δ =.1; T amb =25 C. (1) R DSon limitation. Fig.11 SOAR curve. 21 Dec 11 6

2 k 1.5 (1) (2) MLD771 1.25 k 1 MLD772.75 1.5.5.25 5 5 1 15 T j ( C) -5 5 1 15 T j ( C) k R DS(on) at T = j ----------------------------------------- R DS(on) at 25 C Typical R DSon ; (1) I D = 25 ma; V GS =1V. (2) I D = 2 ma; V GS = 2.4 V. V GS( th) at T j k = -------------------------------------------. V GS( th) at 25 C Typical V GSth at 1 ma. Fig.12 Temperature coefficient of drain-source on-state resistance; typical values. Fig.13 Temperature coefficient of gate-source threshold voltage; typical values. 21 Dec 11 7

PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 4 leads SOT223 D B E A X c y H E v M A b 1 4 Q A A 1 1 2 3 L p e 1 b p w M B detail X e 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A 1 b p b 1 c D E e e 1 H E L p Q v w y mm 1.8 1.5.1.1.8.6 3.1 2.9.32.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1.7.95.85.2.1.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE SOT223 SC-73 97-2-28 99-9-13 21 Dec 11 8

DATA SHEET STATUS DATA SHEET STATUS (1) PRODUCT STATUS (2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-65A. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 6134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 21 Dec 11 9

NOTES 21 Dec 11 1

NOTES 21 Dec 11 11

a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 4 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. Koninklijke Philips Electronics N.V. 21 SCA73 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 61351/3/pp12 Date of release: 21 Dec 11 Document order number: 9397 75 964

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