LIITK LTRONIS O.,LT. OUR IIT L ISPLY (0.39 Inch) Pb Lead-ree Parts L4K5/63HS-XX/S7-P T SHT O. NO : QW0905- L4K5/63HS-XX/S7-P RV. : T : 12 - ug. - 2006
LIITK LTRONIS O.,LT. PRT NO. L4K5/63HS-XX/S7-P Page 1/8 Package imensions L4K5/63HS-XX/S7-P IN RIN ORR T USTOMR P/N LPLIN 40.18(1.582") 7.0(0.276").0 (0.39") I.1 I.2 L1 L2 I.3 L3 I.4 12.8 (0.504") 6.5±0.3 12.7±0.3 1.2 90 ±5 Ø 0.51TYP 2.54*13=33.02 P PIN NO.1 Note : 1.ll dimension are in millimeters and (lnch) tolerance is ±0.25mm unless otherwise noted. 2.Specifications are subject to change without notice.
LIITK LTRONIS O.,LT. PRT NO. L4K5/63HS-XX/S7-P Page 2/8 Internal ircuit iagram L4K53HS-XX/S7-P L4K63HS-XX/S7-P 14 13 12 11 9 8 I.1 5 14 13 12 11 9 8 I.1 5 I.2 4 I.2 4 I.3 2 I.3 2 I.4 1 I.4 1 L1 L2 3 L1 L2 3
LIITK LTRONIS O.,LT. PRT NO. L4K5/63HS-XX/S7-P Page 3/8 lectrical onnection PIN NO.1 L4K53HS-XX/S7-P PIN NO.1 L4K63HS-XX/S7-P 1 ommon athode ig.4 1 ommon node ig.4 2 ommon athode ig.3 2 ommon node ig.3 3 athode L1,L2 3 node L1,L2 4 ommon athode ig.2 4 ommon node ig.2 5 ommon athode ig.1 5 ommon node ig.1 6 NO ONNT 6 NO ONNT 7 NO ONNT 7 NO ONNT 8 node 8 athode 9 node 9 athode node athode 11 node 11 athode 12 node 12 athode 13 node,l2 13 athode,l2 14 node,l1 14 athode,l1
LIITK LTRONIS O.,LT. PRT NO. L4K5/63HS-XX/S7-P Page 4/8 bsolute Maximum Ratings at Ta=25 Parameter Symbol Ratings HYS UNIT orward urrent Per hip I 30 m Peak orward urrent Per hip (uty 1/,0.1ms Pulse Width) IP 60 m Power issipation Per hip P 75 mw Reverse urrent Per ny hip Ir μ lectrostatic ischarge( * ) S 2000 V Operating Temperature Topr -25 ~ +85 Storage Temperature Tstg -25 ~ +85 Solder Temperature 1/16 Inch elow Seating Plane or 3 Seconds t 260 * Static lectricity or power surge will damage the L. Use of a conductive wrist band or anti-electrosatic glove is recommended when handing these L. ll devices, equipment and machinery must be properly grounded. Part Selection nd pplication Information(Ratings at 25 ) PRT NO Material HIP mitted common cathode or anode λ (nm) λ (nm) lectrical Vf(v) Iv(mcd) Min. Max. Min. Typ. IV-M L4K53HS-XX/S7-P ommon athode L4K63HS-XX/S7-P lainp Yellow ommon node 587 15 1.7 2.6 12.8 17.0 2:1 Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance.
LIITK LTRONIS O.,LT. PRT NO. L4K5/63HS-XX/S7-P Page 5/8 Test ondition or ach Parameter Parameter Symbol Unit Test ondition orward Voltage Per hip Vf volt If=20m Luminous Intensity Per hip Iv mcd If=m ominant Wavelength λ nm If=20m Spectral Line Half-Width λ nm If=20m Reverse urrent ny hip Ir μ Vr=5V Luminous Intensity Matching Ratio IV-M
LIITK LTRONIS O.,LT. PRT NO. L4K5/63HS-XX/S7-P Typical lectro-optical haracteristics urve HYS HIP Page6/8 ig.1 orward current vs. orward Voltage ig.2 Relative Intensity vs. orward urrent 00 3.0 orward urrent(m) 0 0.1 Relative Intensity Normalize @20m 2.5 2.0 1.5 0.5 0.0 1.5 2.0 2.5 3.0 orward Voltage(V) 0 00 orward urrent(m) ig.3 orward Voltage vs. Temperature ig.4 Relative Intensity vs. Temperature 1.2 3.0 orward Voltage@20m Normalize @25 1.1 0.9 0.8-40 -20 0 20 40 60 80 0 Relative Intensity@20m Normalize @25 2.5 2.0 1.5 0.5 0.0-40 -20 0 20 40 60 80 0 mbient Temperature( ) mbient Temperature( ) ig.5 Relative Intensity vs. Wavelength Relative Intensity@20m 0.5 0.0 500 550 600 650 Wavelength (nm)
LIITK LTRONIS O.,LT. PRT NO. L4K5/63HS-XX/S7-P Page 7/8 Soldering ondition(pb-ree) 1.Iron: Soldering Iron:30W Max Temperature 350 Max Soldering Time:3 Seconds Max(One Time) istance:solder Temperature 1/16 Inch elow Seating Plane or 3 Seconds t 260 2.Wave Soldering Profile ip Soldering Preheat: 120 Max Preheat time: 60seconds Max Ramp-up 2 /sec(max) Ramp-own:-5 /sec(max) Solder ath:260 Max ipping Time:3 seconds Max istance:solder Temperature 1/16 Inch elow Seating Plane or 3 Seconds t 260 Temp( ) 260 260 3sec Max 5 /sec max 120 25 0 0 2 /sec max Preheat 60 Seconds Max 50 0 150 Time(sec)
LIITK LTRONIS O.,LT. PRT NO. L4K5/63HS-XX/S7-P Page 8/8 Reliability Test: Test Item Test ondition escription Reference Standard Operating Life Test 1.Under Room Temperature 2.If=m 3.t=00 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resistance of a part in electrical and themal stressed. MIL-ST-750: 26 MIL-ST-883: 05 JIS 7021: -1 High Temperature Storage Test 1.Ta=5 ±5 2.t=00 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of high temperature for hours. MIL-ST-883:08 JIS 7021: - Low Temperature Storage Test 1.Ta=-40 ±5 2.t=00 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. JIS 7021: -12 High Temperature High Humidity Test 1.Ta=65 ±5 2.RH=90%~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hours. MIL-ST-202:3 JIS 7021: -11 Thermal Shock Test 1.Ta=5 ±5 &-40 ±5 (min) (min) 2.total cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-ST-202: 7 MIL-ST-750: 51 MIL-ST-883: 11 Solder Resistance Test 1.T.Sol=260 ±5 2.well time= ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-ST-202: 2 MIL-ST-750: 2031 JIS 7021: -1 Solderability Test 1.T.Sol=230 ±5 2.well time=5 ±1sec This test intended to see soldering well performed or not. MIL-ST-202: 208 MIL-ST-750: 2026 MIL-ST-883: 2003 JIS 7021: -2