CoolMOS Power Transistor Features Lowest figure-of-merit R ON x Q g Extreme dv/dt rated High peak current capability Product Summary V DS @ T J =25 C 9 V R DS(on),max @ T J = 25 C.5 Ω Q g,typ 68 nc Qualified according to JEDEC 1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge PG-TO262 CoolMOS 9V is designed for: Quasi Resonant Flyback / Forward topologies PC Silverbox and consumer applications Industrial SMPS Type Package Marking IPI9R5C3 PG-TO262 9R5C Maximum ratings, at T J =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D T C =25 C 11 A T C =1 C Pulsed drain current 2) I D,pulse T C =25 C 6.8 24 Avalanche energy, single pulse E AS I D =2.2 A, V DD =5 V 388 mj Avalanche energy, repetitive t AR 2),3) E AR I D =2.2 A, V DD =5 V.74 2),3) Avalanche current, repetitive t AR I AR 2.2 A MOSFET dv /dt ruggedness dv /dt V DS =...4 V 5 V/ns Gate source voltage V GS static ±2 V AC (f>1 Hz) ±3 Power dissipation P tot T C =25 C 156 W Operating and storage temperature T J, T stg -55... 15 C Rev. 1. page 1 28-7-29
Maximum ratings, at T J =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous diode forward current I S 6.6 A T C =25 C Diode pulse current 2) I S,pulse 23 Reverse diode dv /dt 4) dv /dt 4 V/ns Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thjc - -.8 K/W Thermal resistance, junction - ambient R thja leaded - - 62 Soldering temperature, wavesoldering only allowed at leads T sold 1.6 mm (.63 in.) from case for 1 s - - 26 C Electrical characteristics, at T J =25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS = V, I D =25 µa 9 - - V Gate threshold voltage V GS(th) V DS =V GS, I D =.74 ma 2.5 3 3.5 Zero gate voltage drain current I DSS V DS =9 V, V GS = V, T j =25 C - - 1 µa V DS =9 V, V GS = V, T j =15 C - 1 - Gate-source leakage current I GSS V GS =2 V, V DS = V - - 1 na Drain-source on-state resistance R DS(on) V GS =1 V, I D =6.6 A, T j =25 C -.39.5 Ω V GS =1 V, I D =6.6 A, T j =15 C - 1.1 - Gate resistance R G f =1 MHz, open drain - 1.3 - Ω Rev. 1. page 2 28-7-29
Parameter Symbol Conditions Values Unit Dynamic characteristics min. typ. max. Input capacitance C iss V GS = V, V DS =1 V, - 17 - pf Output capacitance C oss f =1 MHz - 83 - Effective output capacitance, energy related 5) C o(er) V GS = V, V DS = V - 52 - to 5 V Effective output capacitance, time related 6) C o(tr) - 2 - Turn-on delay time t d(on) - 7 - ns Rise time t r V DD =4 V, V GS =1 V, I D =6.6 A, - 2 - Turn-off delay time t d(off) R G =3.9 Ω - 4 - Fall time t f - 25 - Gate Charge Characteristics Gate to source charge Q gs - 8 - nc Gate to drain charge Q gd V DD =4 V, I D =6.6 A, - 29 - Gate charge total Q g V GS = to 1 V - 68 tbd Gate plateau voltage V plateau - 4.6 - V Reverse Diode Diode forward voltage V SD V GS = V, I F =6.6 A, T j =25 C -.8 1.2 V Reverse recovery time t rr - 48 - ns Reverse recovery charge Q rr V R =4 V, I F =I S, di F /dt =1 A/µs - 8.5 - µc Peak reverse recovery current I rrm - 31 - A 1) J-STD2 and JESD22 2) Pulse width t p limited by T J,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV =E AR *f. 4) I SD I D, di/dt 2 A/µs, V DClink =4V, V peak <V (BR)DSS, T J <T J,max, identical low side and high side switch 5) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from to 5% V DSS. 6) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 5% V DSS. Rev. 1. page 3 28-7-29
1 Power dissipation 2 Safe operating area P tot =f(t C ) I D =f(v DS ); T C =25 C; D = parameter: t p 16 14 1 2 limited by on-state resistance 12 1 1 1 1 ms 1 µs 1 µs 1 µs P tot [W] 8 I D [A] 1 ms DC 6 1 4 2 25 5 75 1 125 15 T C [ C] 1-1 1 1 1 1 V DS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics Z thjc =f(t P ) I D =f(v DS ); T J =25 C parameter: D=t p /T parameter: V GS 1 35 2 V.5 3 1 V 8 V 25 6 V Z thjc [K/W] 1-1.2.1.5 I D [A] 2 15 5.5 V.2 5 V.1 1 single pulse 5 4.5 V 4 V 1-2 1-5 1-4 1-3 1-2 1-1 5 1 15 2 25 t p [s] V DS [V] Rev. 1. page 4 28-7-29
5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D =f(v DS ); T J =15 C R DS(on) =f(i D ); T J =15 C IPI9R5C3 parameter: V GS parameter: V GS 15 2 V 1 1 V 8 V 5 V 6 V 8 1 4.5 V I D [A] 5 4 V R DS(on) [Ω] 6 4 1 V 2 4 V 4.5 V 4.8 V 5 V 5 1 15 2 25 V DS [V] 5 1 15 2 25 I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on) =f(t J ); I D =6.6 A; V GS =1 V I D =f(v GS ); V DS =2V parameter: T J 1.5 35 3 25 C 1.2 25 R DS(on) [Ω].9.6 98 % I D [A] 2 15 15 C typ 1.3 5-6 -2 2 6 1 14 18 T J [ C] 2 4 6 8 1 V GS [V] Rev. 1. page 5 28-7-29
9 Typ. gate charge 1 Forward characteristics of reverse diode V GS =f(q gate ); I D =6.6 A pulsed I F =f(v SD ) parameter: V DD 1 parameter: T J 1 2 8 25 C, 98% 1 1 15 C, 98% 6 V GS [V] 4 V 72 V I F [A] 25 C 4 15 C 1 2 2 4 6 8 Q gate [nc] 1-1.5 1 1.5 2 V SD [V] 11 Avalanche energy 12 Drain-source breakdown voltage E AS =f(t J ); I D =2.2 A; V DD =5 V V BR(DSS) =f(t J ); I D =.25 ma 4 15 3 1 E AS [mj] 2 V BR(DSS) [V] 95 9 1 85 25 5 75 1 125 15 T J [ C] 8-6 -2 2 6 1 14 18 T J [ C] Rev. 1. page 6 28-7-29
13 Typ. capacitances 14 Typ. C oss stored energy C =f(v DS ); V GS = V; f =1 MHz E oss = f(v DS ) 1 8 Ciss 1 6 C [pf] 1 Coss E oss [µj] 4 1 2 Crss 1 1 2 3 4 5 6 V DS [V] 1 2 3 4 5 6 V DS [V] Rev. 1. page 7 28-7-29
Definition of diode switching characteristics Rev. 1. page 8 28-7-29
PG-TO262 Outlines Dimensions in mm/inches Rev. 1. page 9 28-7-29
Published by Infineon Technologies AG 81726 Munich, Germany 28 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1. page 1 28-7-29