BSZ5DCKD H OptiMOS + OptiMOS -P Small Signal Transistor Features Product Summary Complementary P + channel P Enhancement mode Super Logic level (.5V rated) Common drain Avalanche rated V DS - V R DS(on),max V GS =±.5 V 5 55 mw V GS =±.5 V 95 I D -. 5. A 75 C operating temperature Qualified according to AEC Q % lead-free; RoHS compliant Halogen-free according to IEC66- Type Package Marking Lead Free Halogen Free Packing BSZ5DCKD H PG-TSDSO-8 5DCKD Yes Yes on dry Maximum ratings, at T j =5 C, unless otherwise specified ) Parameter Symbol Conditions Value Unit P Continuous drain current I D T A =5 C -. 5. A T A = C -..6 Pulsed drain current I D,pulse T A =5 C - Avalanche energy, single pulse E AS : I D =5. A, P: I D =-. A, R GS =5 W mj Gate source voltage V GS ± V ) Power dissipation P tot T A =5 C.5 W Operating and storage temperature T j, T stg -55... 75 C ESD class JESD-A-HBM (<5V) Soldering temperature T solder 6 C IEC climatic category; DI IEC 68-55/75/56 ) Remark: only one of both transistors active Rev. page -8-8
BSZ5DCKD H Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case P R thjc - - 8 K/W Device on PCB R thja 6 cm cooling area ) - - 6 K/W Electrical characteristics, at T j =5 C, unless otherwise specified Static characteristics Drain-source breakdown voltage P V (BR)DSS V GS = V, I D =-5 µa - - - V V GS = V, I D =5 µa - - Gate threshold voltage P V GS(th) V DS =V GS, I D =- µa -. -. -.7 V DS =V GS, I D = µa.8.. Zero gate voltage drain current P I DSS V DS =- V, V GS = V, T j =5 C - - -. µa V DS = V, V GS = V, T j =5 C - -. Gate-source leakage current P P V DS =- V, V GS = V, T j =75 C V DS = V, V GS = V, T j =75 C - - -5 - - 5 I GSS V GS =± V, V DS = V - - ± na Drain-source on-state resistance P R DS(on) V GS =-.5 V, I D =. A - 6 mw V GS =.5 V, I D =.9 A - 6 95 P V GS =-.5 V, I D =-. A - 97 5 V GS =.5 V, I D =5. A - 55 Transconductance P g fs V DS > I D R DS(on)max, I D =-. A. 6.9 - S V DS > I D R DS(on)max, I D =.6 A 5.5 - ) Device on mm x mm x.5 mm epoxy PCB FR with 6 cm (one layer, 7 μm thick) copper area for drain connection. PCB is vertical in still air. Rev. page -8-8
BSZ5DCKD H Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance P C iss - 7 6 pf - 5 9 Output capacitance P C oss V GS = V, P: V DS =- V, - 5 : V DS = V, f = MHz - 5 Reverse transfer capacitance P C rss - 9-6 Turn-on delay time P t d(on) - 7. - ns -.9 - Rise time P t r P: V DD =- V, V GS =-.5 V, R G =6 W, -.7 - I D =-. A -. - Turn-off delay time P t d(off) : V DD = V, -. - V GS =.5 V, R G =6 W, I D =5. A -. - Fall time P t f -.7 - -. - Gate Charge Characteristics Gate to source charge P Q gs - -.59 -.8 nc Gate to drain charge Q gd V DD =- V, I D =-. A, - -. -.8 Switching charge Q g V GS = to -.5 V - -. -.5 Gate plateau voltage V plateau - -. - Gate to source charge Q gs -.7. Gate to drain charge Q gd V DD = V, I D =5. A, -. - Switching charge Q g V GS = to.5 V..8 Gate plateau voltage V plateau. Rev. page -8-8
BSZ5DCKD H Parameter Symbol Conditions Values Unit min. typ. max. Reverse Diode Diode continuous forward current P I S - - -. A T C =5 C. Diode pulse current P I S,pulse - - - Diode forward voltage P V SD V GS = V, I F =. A, T j =5 C - -.98 -. V V GS = V, I F =5. A, T j =5 C -.9. Reverse recovery time P t rr. ns V R =± V, I F =I S, -.9 - Reverse recovery charge P Q di F /dt = A/µs rr.6 nc -. - Rev. page -8-8
-I D [A] I D [A] P tot [W] P tot [W] BSZ5DCKD H Power dissipation (P) Power dissipation () P tot =f(t A ) P tot =f(t A ).5.5.5.5.5.5 8 6 8 6 T A [ C] T A [ C] Drain current (P) Drain current () I D =f(t A ) I D =f(t A ) parameter: V GS -.5 V parameter: V GS.5 V.5 5.5 5.5.5.5.5.5.5.5.5 8 6 8 6 T A [ C] T A [ C] Rev. page 5-8-8
Z thja [K/W] Z thja [K/W] -I D [A] I D [A] BSZ5DCKD H 5 Safe operating area (P) 6 Safe operating area () I D =f(v DS ); T A =5 C; D = I D =f(v DS ); T A =5 C; D = parameter: t p parameter: t p µs µs µs µs µs ms µs ms ms ms DC DC - - - - -V DS [V] - - V DS [V] 7 Max. transient thermal impedance (P) 8 Max. transient thermal impedance () Z thja =f(t p ) Z thja =f(t p ) parameter: D =t p /T parameter: D =t p /T.5.5.....5.5.... single pulse -5 - - - - t p [s] single pulse -5 - - - - t p [s] Rev. page 6-8-8
R DS(on) [mw] R DS(on) [mw] I D [A] ID [A] 9 Typ. output characteristics (P) Typ. output characteristics () I D =f(v DS ); T j =5 C I D =f(v DS ); T j =5 C BSZ5DCKD H parameter: V GS parameter: V GS 8 V.5 V 8 V.5 V.5 V V 6. V 6 V 8 8.5 V 6.5 V. V 6. V V.8 V V.8 V V DS [V] VDS [V] Typ. drain-source on resistance (P) Typ. drain-source on resistance () R DS(on) =f(i D ); T j =5 C R DS(on) =f(i D ); T j =5 C parameter: V GS 8 parameter: V GS V. V.5 V 8. V 6 V 6.5 V 8 6 V. V.5 V.5 V V.5 V 6 V 6 8 6 8 I D [A] I D [A] Rev. page 7-8-8
R DS(on) [mw] R DS(on) [mw] -I D [A] I D [A] Typ. transfer characteristics (P) Typ. transfer characteristics () BSZ5DCKD H I D =f(v GS ); V DS > I D R DS(on)max parameter: T j 6 I D =f(v GS ); V DS > I D R DS(on)max parameter: T j 6 5 5 75 C 5 C 75 C 5 C -V GS [V] V GS [V] 5 Drain-source on-state resistance (P) 6 Drain-source on-state resistance () R DS(on) =f(t j ); I D =-. A; V GS =-.5 V R DS(on) =f(t j ); I D =5.A; V GS =.5 V 9 8 6 max 7 6 max typ 5 typ 8-6 - 6 8 T j [ C] -6-6 8 T j [ C] Rev. page 8-8-8
C [pf] C [pf] -V GS(th) [V] V GS(th) [V] 7 Typ. gate threshold voltage (P) 8 Typ. gate threshold voltage () V GS(th) =f(t j ); V GS =V DS ; I D =- µa V GS(th) =f(t j ); V GS =V DS ; I D = µa BSZ5DCKD H.6.6 max max.. typ typ.8 min.8 min.. -6-6 8 T j [ C] -6-6 8 T j [ C] 9 Typ. capacitances (P) Typ. capacitances () C =f(v DS ); V GS = V; f = MHz C =f(v DS ); V GS = V; f = MHz Ciss Ciss Coss Coss Crss Crss 5 5 -V DS [V] V DS [V] Rev. page 9-8-8
-I AV [A] I AV [A] -I F [A] I F [A] BSZ5DCKD H Forward characteristics of reverse diode (P) Forward characteristics of reverse diode () I F =f(v SD ) I F =f(v SD ) parameter: T j parameter: T j 5 C 75 C 75 C 5 C max, 75 C - 75 C, max - max, 5 C 5 C, max -.5.5 -..8..6 -V SD [V] V SD [V] Avalanche characteristics (P) Avalanche characteristics () I AS =f(t AV ); R GS =5 W parameter: T j(start) I AS =f(t AV ); R GS =5 W parameter: T j(start) 5 C 5 C C C 5 C 5 C - t AV [µs] - t AV [µs] Rev. page -8-8
-V BR(DSS) [V] V BR(DSS) [V] -V GS [V] V GS [V] BSZ5DCKD H 5 Typ. gate charge (P) 6 Typ. gate charge () V GS =f(q gate ); I D =-.A pulsed parameter: V DD 6 V GS =f(q gate ); I D =5.A pulsed parameter: V DD 6 5 - V - V -6 V 5 V V 6 V 5.5.5.5 -Q gate [nc] Q gate [nc] 7 Drain-source breakdown voltage (P) 8 Drain-source breakdown voltage () V BR(DSS) =f(t j ); I D =-5 µa V BR(DSS) =f(t j ); I D =5 µa 5 5 9 9 8 8 7 7 6-6 - 6 8 T j [ C] 6-6 - 6 8 T j [ C] Rev. page -8-8
BSZ5DCKD H Package Outline PG-TSDSO-8 PG-TDSO-8: Outline Footprint Dimensions in mm Rev. page -8-8
BSZ5DCKD H Published by Infineon Technologies AG 876 Munich, Germany Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. page -8-8