Type OptiMOS TM 3 Power-Transistor Features Optimized for dc-dc conversion N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Low on-resistance R DS(on) 15 C operating temperature BSZ12DN2NS3 G Product Summary V DS 2 V R DS(on),max 125 mw I D 11.3 A PG-TSDSON-8 Pb-free lead plating; RoHS compliant Qualified according to JEDEC 1) for target application Halogen-free according to IEC61249-2-21 Type Package Marking BSZ12DN2NS3 G PG-TSDSON-8 12DN2N Maximum ratings, at T j =25 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D T C =25 C 11.3 A T C =1 C 8. Pulsed drain current 2) I D,pulse T C =25 C 45 Avalanche energy, single pulse E AS I D =5.7 A, R GS =25 W 6 mj Reverse diode dv /dt dv /dt 1 kv/µs Gate source voltage V GS ±2 V Power dissipation P tot T C =25 C 5 W Operating and storage temperature T j, T stg -55... 15 C IEC climatic category; DIN IEC 68-1 55/15/56 1) J-STD2 and JESD22 2) see figure 3 Rev. 2.2 page 1 211-7-14
BSZ12DN2NS3 G Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thjc - - 2.5 K/W Thermal resistance, junction - ambient R thja 6 cm 2 cooling area 3) - - 6 Electrical characteristics, at T j =25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS = V, I D =1 ma 2 - - V Gate threshold voltage V GS(th) V DS =V GS, I D =25 µa 2 3 4 Zero gate voltage drain current I DSS V DS =16 V, V GS = V, T j =25 C V DS =16 V, V GS = V, T j =125 C -.1 1 µa - 1 1 Gate-source leakage current I GSS V GS =2 V, V DS = V - 1 1 na Drain-source on-state resistance R DS(on) V GS =1 V, I D =5.7 A - 18 125 mw Gate resistance R G - 1.9 - W Transconductance g fs V DS >2 I D R DS(on)max, I D =5.7 A 6 12 - S 3) Device on 4 mm x 4 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 7 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.2 page 2 211-7-14
BSZ12DN2NS3 G Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 51 68 pf Output capacitance C oss V GS = V, V DS =1 V, f =1 MHz - 39 52 Reverse transfer capacitance C rss - 5.1 - Turn-on delay time t d(on) - 6 - ns Rise time t r V DD =1 V, V GS =1 V, I D =5.7 A, - 4 - Turn-off delay time t d(off) R G =1.6 W - 1 - Fall time t f - 3 - Gate Charge Characteristics 4) Gate to source charge Q gs - 2.3 - nc Gate to drain charge Q gd - 1.1 - Switching charge Q sw V DD =1 V, I D =5.7 A, V GS = to 1 V - 1.8 - Gate charge total Q g - 6.5 8.7 Gate plateau voltage V plateau - 4.5 - V Output charge Q oss V DD =1 V, V GS = V - 14 19 nc Reverse Diode Diode continous forward current I S T C =25 C - - 11.3 A Diode pulse current I S,pulse - - 45 Diode forward voltage V SD V GS = V, I F =11.3 A, T j =25 C - 1 1.2 V Reverse recovery time t rr V R =1 V, I F =I S, - 74 - ns Reverse recovery charge Q rr di F /dt =1 A/µs - 212 - nc 4) See figure 16 for gate charge parameter definition Rev. 2.2 page 3 211-7-14
I D [A] Z thjc [K/W] P tot [W] I D [A] BSZ12DN2NS3 G 1 Power dissipation 2 Drain current P tot =f(t C ) I D =f(t C ); V GS 1 V 6 12 5 1 4 8 3 6 2 4 1 2 4 8 12 16 T C [ C] 4 8 12 16 T C [ C] 3 Safe operating area 4 Max. transient thermal impedance I D =f(v DS ); T C =25 C; D = Z thjc =f(t p ) parameter: t p parameter: D =t p /T 1 2 1 1 1 µs 1 µs 1 1 1 µs.5 1 ms 1.2 1 1 ms.1 DC.5.2.1 1-1 1-1 1 1 1 1 2 1 3 V DS [V] single pulse 1-1 1-5 1-4 1-3 1-2 1-1 1 t p [s] Rev. 2.2 page 4 211-7-14
I D [A] g fs [S] I D [A] R DS(on) [mw] 5 Typ. output characteristics 6 Typ. drain-source on resistance I D =f(v DS ); T j =25 C R DS(on) =f(i D ); T j =25 C BSZ12DN2NS3 G parameter: V GS 25 parameter: V GS 2 1 V 6 V 2 7 V 5.5 V 16 5 V 15 12 5.5 V 6 V 8 V 1 V 1 5 V 8 5 4.5 V 4 1 2 3 4 5 V DS [V] 4 8 12 16 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D =f(v GS ); V DS >2 I D R DS(on)max g fs =f(i D ); T j =25 C parameter: T j 25 2 2 16 15 12 1 8 5 15 C 4 25 C 2 4 6 8 V GS [V] 4 8 12 16 I D [A] Rev. 2.2 page 5 211-7-14
C [pf] I F [A] R DS(on) [mw] V GS(th) [V] 9 Drain-source on-state resistance 1 Typ. gate threshold voltage BSZ12DN2NS3 G R DS(on) =f(t j ); I D =5.7 A; V GS =1 V V GS(th) =f(t j ); V GS =V DS parameter: I D 35 4 3 3.5 25 2 3 2.5 25 µa 25 µa 2 15 98 % typ 1.5 1 1 5.5-6 -2 2 6 1 14 18 T j [ C] -6-2 2 6 1 14 18 T j [ C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(v DS ); V GS = V; f =1 MHz I F =f(v SD ) parameter: T j 1 3 1 Ciss Coss 25 C 1 2 1 15 C, 98% 1 1 1 15 C 25 C, 98% Crss 1 4 8 12 16 V DS [V].1.5 1 1.5 2 V SD [V] Rev. 2.2 page 6 211-7-14
V BR(DSS) [V] I AS [A] V GS [V] BSZ12DN2NS3 G 13 Avalanche characteristics 14 Typ. gate charge I AS =f(t AV ); R GS =25 W parameter: T j(start) 1 V GS =f(q gate ); I D =5.7 A pulsed parameter: V DD 1 16 V 25 C 8 1 V 1 C 6 1 125 C 4 V 4 2.1 1 1 1 1 t AV [µs] 1 2 3 4 5 6 7 8 Q gate [nc] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS) =f(t j ); I D =1 ma 23 V GS 22 Q g 21 2 V gs(th) 19 Q g(th) Q sw Q gate 18-6 -2 2 6 1 14 18 T j [ C] Q gs Q gd Rev. 2.2 page 7 211-7-14
BSZ12DN2NS3 G Package Outline:PG-TSDSON-8 Rev. 2.2 page 8 211-7-14
BSZ12DN2NS3 G Published by Infineon Technologies AG 81726 Munich, Germany 21 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain Rev. 2.2 page 9 211-7-14