MMBV2101LT1 Series, MV2105, MV2101, MV2109, LV2209. Silicon Tuning Diodes pf, 30 VOLTS VOLTAGE VARIABLE CAPACITANCE DIODES

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MMBVLT Series, MV5, MV, MV9, LV9 Preferred evice Silicon Tuning iodes These devices are designed in popular plastic packages for the high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications. They provide solidstate reliability in replacement of mechanical tuning methods. Also available in a Surface Mount Package up to pf. Features High Q Controlled and Uniform Tuning Ratio Standard Capacitance Tolerance 0% Complete Typical esign Curves PbFree Packages are Available MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage V R Vdc Forward Current I F 0 madc Forward Power issipation @ MMBVxx erate above 5 C @ erate above 5 C MVxx LV9 P 5.8 80.8 mw mw/ C mw mw/ C Junction Temperature T J + C Storage Temperature Range T stg 55 to + C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS ( unless otherwise noted) Characteristic Symbol Min Typ Max Unit Reverse Breakdown Voltage (I R = 0 Adc) MMBVxx, MVxx LV9 Reverse Voltage Leakage Current (V R = 5 Vdc, ) iode Capacitance Temperature Coefficient (V R = 4.0 Vdc, f =.0 MHz) V (BR)R 5 Vdc I R 0. Adc TC C 80 ppm/ C 6.800 pf, VOLTS VOLTAGE VARIABLE CAPACITANCE IOES Cathode Cathode SOT TO9 SOT (TO6) CASE 808 STYLE 8 TO9 (TO6AC) CASE 8 STYLE Anode Anode yy yyyy AYWW yyyyyy = Specific evice Code A = Assembly Location Y = Year WW = Work Week = PbFree Package (Note: Microdot may be in either location) MARKING IAGRAMS xxx M xxx = Specific evice Code M = ate Code* = PbFree Package (Note: Microdot may be in either location) *ate Code orientation and/or overbar may vary depending upon manufacturing location. ORERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page of this data sheet. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 06 January, 06 Rev. 4 Publication Order Number: MMBVLT/

MMBVLT Series, MV5, MV, MV9, LV9 C T, iode Capacitance V R = 4.0 Vdc, f =.0 MHz pf Q, Figure of Merit V R = 4.0 Vdc, f = MHz TR, Tuning Ratio C /C f =.0 MHz evice Marking Package Shipping Min Nom Max Typ Min Typ Max MMBVLT M4G SOT,000 / Tape & Reel 6. 6.8 7.5 4.5.7. MMBVLTG M4G SOT,000 / Tape & Reel 6. 6.8 7.5 4.5.7. MMBVL M4G SOT Bulk (Note ) 6. 6.8 7.5 4.5.7. MV MV TO9,000 per Box 6. 6.8 7.5 4.5.7. MVG MV TO9,000 per Box 6. 6.8 7.5 4.5.7. MMBVLT 4H SOT,000 / Tape & Reel 9.0 0 400.5.9. MMBV5LT 4U SOT,000 / Tape & Reel.5 5 6.5 400.5.9. MMBV5LTG 4U SOT,000 / Tape & Reel.5 5 6.5 400.5.9. MMBV5L 4U SOT Bulk (Note ).5 5 6.5 400.5.9. MV5 MV5 TO9,000 per Box.5 5 6.5 400.5.9. MV5G MV5 TO9,000 per Box.5 5 6.5 400.5.9. MMBV7LT 4W SOT,000 / Tape & Reel 9.8 4..5.9. MMBV7LTG 4W SOT,000 / Tape & Reel 9.8 4..5.9. MMBV7L 4W SOT Bulk (Note ) 9.8 4..5.9. MMBV8LT 4X SOT,000 / Tape & Reel 4. 7 9.7 0.5.0. MMBV8LTG 4X SOT,000 / Tape & Reel 4. 7 9.7 0.5.0. LV9 LV9 TO9,000 per Box 9.7 6. 0.5.0. MMBV9LT 4J SOT,000 / Tape & Reel 9.7 6. 0.5.0. MMBV9LTG 4J SOT,000 / Tape & Reel 9.7 6. 0.5.0. MMBV9L 4J SOT Bulk (Note ) 9.7 6. 0.5.0. MV9 MV9 TO9,000 per Box 9.7 6. 0.5.0. MV9G MV9 TO9,000 per Box 9.7 6. 0.5.0. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BR80/.. MMBVLT, MMBV5LT, MMBV7LT thru MMBV9LT, are also available in bulk. Use the device title and drop the T suffix when ordering any of these devices in bulk. PARAMETER TEST METHOS. C T, IOE CAPACITANCE (C T = C C + C J ). C T is measured at.0 MHz using a capacitance bridge (Boonton Electronics Model 75A or equivalent).. TR, TUNING RATIO TR is the ratio of C T measured at.0 Vdc divided by C T measured at Vdc.. Q, FIGURE OF MERIT Q is calculated by taking the G and C readings of an admittance bridge at the specified frequency and substituting in the following equations: Q fc G (Boonton Electronics Model AS8 or equivalent). Use Lead Length /6. 4. TC C, IOE CAPACITANCE TEMPERATURE COEFFICIENT TC C is guaranteed by comparing C T at V R = 4.0 Vdc, f =.0 MHz, T A = 65 C with C T at V R = 4.0 Vdc, f =.0 MHz, T A = +85 C in the following equation, which defines TC C : TCC C T( 85 C) CT( 65 C) 0 6 85 65 C T (5 C) Accuracy limited by measurement of C T to ±0. pf.

I MMBVLT Series, MV5, MV, MV9, LV9 TYPICAL EVICE CHARACTERISTICS C T, IOE CAPACITANCE (pf) 000 0 0 00 0 5.0 MMBV9LT/MV9 MMBV5LT/MV5 MMBVLT/MV f =.0 MHz.0.0 0. 0. 0. 0.5.0.0.0 5.0 0 Figure. iode Capacitance versus Reverse Voltage NORMALIZE IOE CAPACITANCE.040.0.0.00.000 0.990 0.980 0.970 V R =.0 Vdc 0.960 75 5 0 +5 + +75 T J, JUNCTION TEMPERATURE ( C) V R = Vdc NORMALIZE TO C T at V R = (CURVE) V R = 4.0 Vdc +00 Figure. Normalized iode Capacitance versus Junction Temperature +5, REVERSE CURRENT (na) R 00 0 5.0.0.0 0. 0. 0.0 0.05 0.0 0.0 0 T A = 75 C 5.0 0 5 5 Figure. Reverse Current versus Reverse Bias Voltage Q, FIGURE OF MERIT 00 00 00 000 0 0 0 00 MMBV9LT MMBVLT/MV f = MHz 0.0.0.0 5.0 7.0 0 Figure 4. Figure of Merit versus Reverse Voltage Q, FIGURE OF MERIT 00 00 00 000 0 0 0 00 V R = 4.0 Vdc 0 0 70 00 0 f, FREQUENCY (MHz) MMBVLT/MV MMBV9LT/MV9 Figure 5. Figure of Merit versus Frequency

MMBVLT Series, MV5, MV, MV9, LV9 PACKAGE IMENSIONS SOT (TO6) CASE 808 ISSUE AN A E A e b HE SEE VIEW C L L VIEW C c 0.5 NOTES:. IMENSIONING AN TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING IMENSION: INCH.. MAXIMUM LEA THICKNESS INCLUES LEA FINISH THICKNESS. MINIMUM LEA THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 80 THRU 07 AN 09 OBSOLETE, NEW STANAR 808. MILLIMETERS INCHES IM MIN NOM MAX MIN NOM MAX A 0.89.00. 0.05 0.040 0.044 A 0.0 0.06 0.0 0.00 0.00 0.004 b 0.7 0.44 0. 0.05 0.08 0.0 c 0.09 0. 0.8 0.00 0.005 0.007.80.90.04 0.0 0.4 0. E...40 0.047 0.05 0.055 e.78.90.04 0.070 0.075 0.08 L 0.0 0. 0. 0.004 0.008 0.0 L 0.5 0.54 0.69 0.04 0.0 0.09 H E.0.40.64 0.08 0.094 0.04 STYLE 8: PIN. ANOE. NO CONNECTION. CATHOE 0.95 0.07 SOLERING FOOTPRINT* 0.95 0.07 0.9 0.05 0.8 0.0 SCALE 0:.0 0.079 mm inches *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLERRM/. 4

MMBVLT Series, MV5, MV, MV9, LV9 PACKAGE IMENSIONS TO9 (TO6AC) CASE 806 ISSUE L SEATING PLANE P R X X H G A V N L K B C ÉÉJ SECTION XX NOTES:. IMENSIONING AN TOLERANCING PER ANSI Y4.5M, 98.. CONTROLLING IMENSION: INCH.. CONTOUR OF PACKAGE BEYON ZONE R IS UNCONTROLLE. 4. LEA IMENSION IS UNCONTROLLE IN P AN BEYON IMENSION K MINIMUM. INCHES MILLIMETERS IM MIN MAX MIN MAX A 0.75 0.5 4.45 5. B 0.70 0. 4. 5. C 0.5 0.65.8 4.9 0.06 0.0 0.407 0.5 G 0.0 BSC.7 BSC H 0.00 BSC.54 BSC J 0.04 0.06 0.6 0.4 K 0.0.70 L 0. 6.5 N 0.080 0.05.0.66 P 0.0.7 R 0.5.9 V 0.5.4 STYLE : PIN. ANOE. CATHOE N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORERING INFORMATION LITERATURE FULFILLMENT: Literature istribution Center for ON Semiconductor P.O. Box 6, Phoenix, Arizona 88 USA Phone: 48089770 or 80044860 Toll Free USA/Canada Fax: 480897709 or 80044867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 80089855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 9 Kamimeguro, Meguroku, Tokyo, Japan 5 Phone: 85778 5 ON Semiconductor Website: Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MMBVLT/