BF556A; BF556B; BF556C

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SOT23 Rev. 4 5 September 2 Product data sheet. Product profile. General description N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling..2 Features and benefits Low leakage level (typ. 5 fa) High gain Low cut-off voltage..3 Applications Impedance converters in e.g. electret microphones and infrared detectors VHF amplifiers in oscillators and mixers..4 Quick reference data Table. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V DS drain-source - - 3 V voltage (DC) V GSoff gate-source cut-off I D =2 A;.5-7.5 V voltage V DS =5V I DSS drain current V GS =V; V DS =5V BF556A 3-7 ma BF556B 6-3 ma BF556C - 8 ma P tot total power T amb 25 C - - 25 mw dissipation y fs forward transfer admittance V GS =V; V DS =5V 4.5 - - ms

2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol source (s) 2 drain (d) 3 g 3 gate (g) 2 d s sym54 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BF556A - plastic surface mounted package; 3 leads SOT23 BF556B BF556C 4. Marking Table 4. Marking Type number Marking code [] BF556A 24* BF556B 25* BF556C 26* [] * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. Product data sheet Rev. 4 5 September 2 2 of 4

5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 634). Symbol Parameter Conditions Min Max Unit V DS drain-source voltage (DC) - 3 V V GSO gate-source voltage open drain - 3 V V GDO gate-drain voltage (DC) open source - 3 V I G forward gate current (DC) - ma P tot total power dissipation T amb 25 C [] - 25 mw T stg storage temperature 65 +5 C T j junction temperature - 5 C [] Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead mm 2. 3 mrc66 P tot (mw) 2 5 5 T amb ( C) Fig. Power derating curve. 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Typ Unit R th(j-a) thermal resistance from junction to ambient [] 5 K/W [] Device mounted on an FR4 printed-circuit board, maximum lead length 4 mm; mounting pad for the drain lead mm 2. Product data sheet Rev. 4 5 September 2 3 of 4

7. Static characteristics Table 7. Static characteristics T j =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V (BR)GSS gate-source breakdown voltage I G = A; V DS =V 3 - - V V GSoff gate-source cut-off voltage I D = 2 A; V DS =5V.5-7.5 V I DSS drain current V GS =V; V DS =5V BF556A 3-7 ma BF556B 6-3 ma BF556C - 8 ma I GSS gate-source leakage current V GS = 2 V; V DS =V -.5 5 pa y fs forward transfer admittance V GS =V; V DS =5V 4.5 - - ms y os common source output admittance V GS =V; V DS =5V - 4 - S Product data sheet Rev. 4 5 September 2 4 of 4

8. Dynamic characteristics Table 8. Dynamic characteristics T j =25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit C iss input capacitance V DS =5V; f=mhz V GS = V -.7 - pf V GS =V - 3 - pf C rss reverse transfer capacitance V DS =5V; f=mhz V GS = V -.8 - pf V GS =V -.9 - pf g is common source input conductance V DS =V; I D =ma f = MHz - 5 - S f = 45 MHz - 3 - S g fs common source transfer conductance V DS =V; I D =ma f = MHz - 2 - ms f = 45 MHz -.8 - ms g rs common source reverse V DS =V; I D =ma - 6 - S conductance f = MHz - 6 - S f = 45 MHz - 4 - S g os common source output conductance V DS =V; I D =ma f = MHz - 3 - S f = 45 MHz - 6 - S V n equivalent input noise voltage V DS =V; I D =ma; f = Hz - 4 - nv/ Hz 2 mrc54 mrc56 I DSS (ma) 6 Y fs (ms) 8 2 6 8 4 4 2 2 4 6 8 V GSoff (V) 2 4 6 8 V GSoff (V) V DS =5V. V DS =5V; I D = A. Fig 2. Drain current as a function of gate-source cut-off voltage; typical values. Fig 3. Forward transfer admittance as a function of gate-source cut-off voltage; typical values. Product data sheet Rev. 4 5 September 2 5 of 4

mrc53 3 mrc55 G os (μs) 8 R DSon (Ω) 6 2 4 2 2 4 6 8 V GSoff (V) 2 4 6 8 V GSoff (V) V DS =5V. V DS = mv; V GS =V. Fig 4. Common-source output conductance as a function of gate-source cut-off voltage; typical values. Fig 5. Drain-source on-state resistance as a function of gate-source cut-off voltage; typical values. I D (ma) 5 4 mrc45 6 I D (ma) 2 mrc46 3 8 (3) 2 (4) (3) 4 (5) (6) 4 8 2 6 V DS (V) 4 8 2 6 V DS (V) BF556A BF556B V GS = V. V GS = V. V GS =.5 V. V GS =.5 V. (3) V GS =. V. (3) V GS =. V. (4) V GS =.5 V. (5) V GS = 2. V. (6) V GS = 2.5 V. Fig 6. Typical output characteristics. Fig 7. Typical output characteristics. Product data sheet Rev. 4 5 September 2 6 of 4

25 mrc47 3 mrc48 I D (ma) 2 I D (ma) 5 2 (3) (4) 5 (5) (6) 4 8 2 6 V DS (V) (3) 6 4 2 V GS (V) BF556C V DS =5V. V GS = V. BF556C. V GS =. V. BF556B. (3) V GS = 2. V. (3) BF556A. (4) V GS = 3. V. (5) V GS = 4. V. (6) V GS = 5. V. Fig 8. Typical output characteristics. Fig 9. Typical input characteristics. 3 I D (μa) 2 (3) mrc49 2 I G (pa) mrc5 (4) (3) 2 3 8 6 4 2 V GS (V) 2 4 8 2 6 2 V DG (V) Fig. V DS =5V. BF556C. BF556B. (3) BF556A. Drain current as a function of gate-source voltage; typical values. I D = ma only for BF556B and BF556C. I D = ma. I D = ma. (3) I D =. ma. (4) I GSS. Fig. Gate current as a function of drain-gate voltage; typical values. Product data sheet Rev. 4 5 September 2 7 of 4

3 mrc5 mrc34 I GSS (pa) 2 C rss (pf).8.6.4.2 5 5 5 T j ( C) 8 6 4 2 V GS (V) V DS =V; V GS = 2 V. V DS =5V. Fig 2. Gate current as a function of junction temperature; typical values. Fig 3. Reverse transfer capacitance; typical values. 3 mrc4 2 mrc42 C iss (pf) 2 g is, b is (ms) 8 6 4 2 V GS (V) 2 2 3 f (MHz) V DS =5V. b is. g is. V DS =V; I D =ma; T amb =25 C. Fig 4. Input capacitance; typical values. Fig 5. Common-source input admittance; typical values. Product data sheet Rev. 4 5 September 2 8 of 4

mrc4 mrc44 g fs, b fs (ms) b rs, g rs (ms) 2 Fig 6. 2 3 f (MHz) g fs. b fs. V DS =V; I D =ma; T amb =25 C. Common-source transfer admittance; typical values. 3 2 3 f (MHz) Fig 7. b rs. g rs. V DS =V; I D =ma; T amb =25 C. Common-source reverse admittance; typical values. mrc43 3 mrc278 b os, g os (ms) V n (V) 2 2 2 3 f (MHz) 2 3 4 5 f (Hz) Fig 8. b os. g os. V DS =V; I D =ma; T amb =25 C. Common-source output admittance;typical values. Fig 9. V DS =V; I D =ma. Equivalent noise voltage as a function of frequency. Product data sheet Rev. 4 5 September 2 9 of 4

9. Package outline Plastic surface-mounted package; 3 leads SOT23 D B E A X H E v M A 3 Q A A 2 c e b p w M B L p e detail X 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A max. mm..9. b p c D E e e H E L p Q v w.48.38.5.9 3. 2.8.4.2.9.95 2.5 2..45.5.55.45.2. OUTLINE VERSION SOT23 REFERENCES IEC JEDEC JEITA TO-236AB EUROPEAN PROJECTION ISSUE DATE 4--4 6-3-6 Fig 2. Package outline. Product data sheet Rev. 4 5 September 2 of 4

. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes BF556A_BF556B_BF556C v.4 295 Product data sheet - BF556A_BF556B_BF556C v.3 Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Package outline drawings have been updated to the latest version. BF556A_BF556B_BF556C v.3 2485 Product data sheet - BF556A-B-C v.2 (9397 75 3393) BF556A-B-C v.2 996729 Product data sheet - - Product data sheet Rev. 4 5 September 2 of 4

. Legal information. Data sheet status Document status [][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [] Please consult the most recently issued document before initiating or completing a design. [2] The term short data sheet is explained in section Definitions. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com..2 Definitions Draft The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 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This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer s own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer s applications and products planned, as well as for the planned application and use of customer s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer s applications or products, or the application or use by customer s third party customer(s). Customer is responsible for doing all necessary testing for the customer s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer s third party customer(s). NXP does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 634) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Product data sheet Rev. 4 5 September 2 2 of 4

Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors specifications such use shall be solely at customer s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors standard warranty and NXP Semiconductors product specifications..4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 2. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Product data sheet Rev. 4 5 September 2 3 of 4

3. Contents Product profile........................... General description......................2 Features and benefits.....................3 Applications............................4 Quick reference data.................... 2 Pinning information...................... 2 3 Ordering information..................... 2 4 Marking................................ 2 5 Limiting values.......................... 3 6 Thermal characteristics.................. 3 7 Static characteristics..................... 4 8 Dynamic characteristics.................. 5 9 Package outline........................ Revision history........................ Legal information....................... 2. Data sheet status...................... 2.2 Definitions............................ 2.3 Disclaimers........................... 2.4 Trademarks........................... 3 2 Contact information..................... 3 3 Contents.............................. 4 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section Legal information. NXP B.V. 2. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 5 September 2 Document identifier: BF556A_BF556B_BF556C