HB HB HB3 PACKAGE DIMENSIONS 0.7 (.0) 0.57 (.6) C L 0.9 (6.35) 0.3 (6.5) D E C L 0.39 (.00) 0.3 (0.85).33 (3.38).073 (.85) 0.9 (3.3) 0.9 (3.0) 0.33 (.0) 0. (0.7) Optical C L 0.5 (3.) 0.9 (3.0).35 (8.00).95 (7.5).7 (6.9) LC 0.0 (.8) 0.09 (.3) SCHEMATIC 3 PIN ANODE PIN CATHODE PIN 3 COLLECTOR PIN EMITTER 0.00 (0.5) (SQ) NOTES:. Dimensions for all drawings are in inches (mm).. Tolerance of ±.00 (.5) on all non-nominal dimensions unless otherwise specified. 3 DESCRIPTION The HB, HB and HB3 consist of a gallium arsenide infrared emitting diode coupled with a silicon photodarlington in a plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching the output from an ON to an OFF state. FEATURES Opaque housing Low cost.035" apertures High I C(ON) Page of 6 6/3/0
HB HB HB3 ABSOLUTE MAXIMUM RATINGS (T A = 5 C unless otherwise specified) Parameter Symbol Rating Unit Operating Temperature T OPR -55 to 00 C Storage Temperature T STG -55 to 00 C Soldering Temperature (Iron) (,3 and ) T SOL-I 0 for 5 sec C Soldering Temperature (Flow) ( and 3) T SOL-F 60 for 0 sec C INPUT (EMITTER) Continuous Forward Current I F 50 ma Reverse Voltage V R 6 V Power Dissipation () P D 00 mw OUTPUT (SENSOR) Collector to Emitter Voltage V CEO 30 V Emitter to Collector Voltage V ECO 6 V Collector Current I C 0 ma Power Dissipation (T C = 5 C) () P D 50 mw NOTES:. Derate power dissipation linearly.67 mw/ C above 5 C.. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents.. Soldering iron /6" (.6 mm) minimum from housing. Page of 6 6/3/0
HB HB HB3 ELECTRICAL/OPTICAL CHARACTERISTICS (T A =5 C) INPUT (EMITTER) PARAMETER TEST CONDITIONS SYMBOL DEVICES MIN TYP MAX UNITS Forward Voltage I F = 60 ma V F All.7 V Reverse Breakdown Voltage I R = 0 µa V R All 6.0 V Reverse Leakage Current V R = 3 V I R All.0 µa OUTPUT (SENSOR) Emitter to Collector Breakdown I F = 00 µa, E e = 0 BV ECO All 7.0 V Collector to Emitter Breakdown I C = ma, E e = 0 BV CEO All 30 V Collector to Emitter Leakage V CE = 5 V, E e = 0 I CEO All 00 na COUPLED On-State Collector Current Saturation Voltage Turn-On Time Turn-Off Time I F = ma, V CE =.5 V I F = 5 ma, V CE =.5 V I F = 0 ma, V CE =.5 V I C(ON) HB 0.5 HB.0 HB3.0 HB.5 HB 5.0 HB3 0 HB 7.5 HB HB3 5 I F = 0 ma, I C =.8 ma All.0 V V CE(SAT) I F = 60 ma, I C = 50 ma HB/.5 V I F = 0 ma, V CC = 5 V, R L = 750Ω I F = 60 ma, V CC = 5 V, R L = 75Ω I F = 0 ma, V CC = 5 V, R L = 750Ω I F = 60 ma, V CC = 5 V, R L = 75Ω t on All 5 All 7 t off All 50 All 5 ma µs µs Page 3 of 6 6/3/0
HB HB HB3 I CE(on), NORMALIZED OUTPUT CURRENT 00 80 60 0 0 0 8 6.8.6...08..06.0.0 Figure. Output Current vs. Input Current I F = 5 ma V CE =.5 V PULSED P W = 00 µsec PRR = 00 pps 6 8 0 0 0 60 80 00 00 00 600 000 I F, INPUT CURRENT (ma) 00 Figure. Output Current vs. Temperature V CE =.5 V, I F = 5 ma, T A = 5 C I CE(on), NORMALIZED OUTPUT CURRENT 0 I F = 00 ma I F = 60 ma I F = 30 ma I F = 0 ma I F = 0 ma INPUT PULSED I F = 5 ma I F = ma 0. -50-5 0 5 50 75 00 Figure 3. V CE(SAT) vs. Temperature I C 50 ma = I F 60 ma I C.8 ma =, TA = 5 C I F 0 ma PULSED PW = 00 µs, PRR = 00 pps V CE(SAT), NORMALIZED 0.8 0.6 I C 3.6 ma = I F 0 ma I C.8 ma = I F 0 ma I C 0.9 ma = I F 5 ma 0. -50-5 0 5 50 75 00 Page of 6 6/3/0
HB HB HB3 Figure. Leakage Current vs. Temperature DETECTOR EMITTER 0 V CE = 5 V T A = 5 C 0 0 3 0 3 I CEO, NORMALIZED DARK CURRENT 0 0 V CE = 5 V V CE = 0 V I R, NORMALIZED LEAKAGE CURRENT 0 0 V R = 5 V T A = 5 C 0. 5 50 75 00 0. 5 50 75 00 Figure 6. Output Current vs. Distance Figure 5. Switching Speed vs. RL.00 d, DISTANCE (mils) 78.7 57.5 36. 35 393.7 I F R L t ON, AND t OFF NORMALIZED.8.6.. PW = 300 µs PRR = 00 pps I F = 7.5 AMPS, V CC = 5V R L R L = 750 Ω t off t on V CC I CE(on), NORMALIZED OUTPUT CURRENT..0.00 E BLACK SHIELD D d o NORMALIZED TO VALUE WITH SHIELD REMOVED BLACK SHIELD d o 0. 0 0 0 60 80 00 75 R L, LOAD RESISTANCE (Ω) 00 00 600 800 750 000 500.000 0 6 8 0 d, DISTANCE (mm) Page 5 of 6 6/3/0
HB HB HB3 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein:. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Page 6 of 6 6/3/0