MITSUBISHI INTELLIGENT POWER MODULES PM75CVA120 FLAT-BASE TYPE INSULATED PACKAGE

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PM75CVA12 TERMINAL CODE 1. WFO 2. VWPC 3. WP 4. VWP1 5. VFO 6. VVPC 7. VP 8. VVP1 9. UFO 1. VUPC 11. UP 12. VUP1 13. NC 14. FO 15. VNC 16. VN1 17. UN 18. VN 19. WN B K E P Q N A D P M 1234 5678 911112 13 14 15 16 R U U P V L - TYP. 17 18 19 CCφ (4 PLACES) BB SQ PIN - TYP. (19 PLACES) RfO FO NC WN VNC VN1 TEMP TH RfO = 1.5k OHM DETAIL A VN AA - TYP. Z - TYP. C UN Y VWPC WFO WP VWP1 U V W N J TYP. X VVPC VP VFO VVP1 M S NUTS (5 TYP.) W VUPC UP UFO VUP1 T (4 TYP.) SEE DETAIL A F H G Description: Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 2kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. Features: Complete Output Power Circuit Gate Drive Circuit Protection Logic Short Circuit Over Temperature Under Voltage N W V U P Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 4.72 12. Q.59 15.1 B 4.2 12. R.72 18.25 C.95+.4/-.2 24.1 +1./-.5 S M5 Metric M5 D 4.13±.1 15.±.25 T.22 Dia. Dia. 5.5 E 3.43±.1 87.±.25 U.56±.1 14.1±.25 F.16 4. V 1.72±.12 43.57±.3 G.95 24.1 W.57±.12 14.6±.3 H.42 1.6 X 3.35 85.2 J.87 22. Y.85 21.6 K 3.51±.2 89.2±.5 Z.1±.1 2.54±.25 L.47 12. AA 1.37±.1 3.49±.25 M.48 12.3 BB.2 SQ.64 SQ N.77 19.5 CC.12+.4/-.2 3.+1./-.5 P.3 7.5 Applications: Inverters UPS Motion/Servo Control Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. PM75CVA12 is a 12V, 75 Ampere Intelligent Power Module. Type Current Rating V CES Amperes Volts (x 1) PM 75 12 Sep.2

PM75CVA12 Absolute Maximum Ratings, unless otherwise specified Symbol Ratings Units Power Device Junction Temperature T j -2 to 15 C Storage Temperature T stg -4 to 125 C Case Operating Temperature T C -2 to 1 C Mounting Torque, M5 Mounting Screws 2.5 ~ 3.5 N m Mounting Torque, M5 Main Terminal Screws 2.5 ~ 3.5 N m Module Weight (Typical) 73 Grams Supply Voltage (Applied between P - N) V CC(surge) 1 Volts Supply Voltage Protected by SC (V D = 13.5 ~16.5V, Inverter Part, Start) V CC(prot.) 8 Volts Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V iso 25 Vrms Control Sector Supply Voltage (Applied between V UP1 -V UPC, V VP1 -V VPC, V WP1 -V WPC, V N1 -V NC ) V D 2 Volts Input Voltage (Applied between U P -V UPC, V P -V VPC, W P -V WPC, U N V N W N -V NC ) V CIN 2 Volts Fault Output Supply Voltage (Applied between U FO -V UPC, V FO -V VPC, W FO -V WPC, F O -V NC ) V FO 2 Volts Fault Output Current (nk Current at U FO, V FO, W FO and F O Terminal) I FO 2 ma IGBT Inverter Sector Collector-Emitter Voltage (, V CIN = 15V) V CES 12 Volts Collector Current, (T C = 25 C) I C 75 Amperes Peak Collector Current, (T C = 25 C) I CP 15 Amperes Collector Dissipation (T C = 25 C) P C 5 Watts Sep.2

PM75CVA12 Electrical and Mechanical Characteristics, unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Control Sector Short Circuit Trip Level SC -2 C T j 125 C, 15 Amperes Short Circuit Current Delay Time t off(sc) 1 µs Over Temperature Protection OT Trip Level 1 11 12 C (, Lower Arm) OT r Reset Level 85 95 15 C Supply Circuit Under Voltage Protection UV Trip Level 11.5 12. 12.5 Volts (-2 C T j 125 C) UV r Reset Level 12.5 Volts Circuit Current I D, V CIN = 15V, V N1 -V NC 4 55 ma, V CIN = 15V, V XP1 -V XPC 13 18 ma Input ON Threshold Voltage V th(on) Applied between U P -V UPC, V P -V VPC, 1.2 1.5 1.8 Volts Input OFF Threshold Voltage V th(off) W P -V WPC, U N V N W N -V NC 1.7 2. 2.3 Volts Fault Output Current I FO(H), V FO = 15V*.1 ma I FO(L), V FO = 15V* 1 15 ma Minimum Fault Output Pulse Width t FO * 1. 1.8 ms * Fault output is given only when the internal SC, OT, and UV protections circuits of either an upper-arm or a lower-arm device operate to protect it. Sep.2

PM75CVA12 Electrical and Mechanical Characteristics, unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units IGBT Inverter Sector Collector-Emitter Cutoff Current I CES V CE = V CES,, 1. ma V CE = V CES,, 1. ma FWDi Forward Voltage V EC -I C = 75A,, V CIN = 15V 2.5 3.5 Volts Collector-Emitter Saturation Voltage V CE(sat), V CIN = V, I C = 75A, 2.65 3.3 Volts Pulsed,, V CIN = V, I C = 75A, 2.6 3.25 Volts Pulsed, Switching Times t on.4.9 2.3 µs t rr, V CIN = V 15V.2.3 µs t C(on) V CC = 6V, I C = 75A,.4 1. µs t off 2.4 3.4 µs t C(off).7 1.2 µs Thermal Characteristics Characteristic Symbol Condition Min. Typ. Max. Units Junction to Case Thermal Resistance R th(j-c)q Each Inverter IGBT.25 C/Watt R th(j-c)f Each Inverter FWDi.51 C/Watt Contact Thermal Resistance R th(c-f) Case to Fin Per Module,.25 C/Watt Thermal Grease Applied Recommended Conditions for Use Characteristic Symbol Condition Value Units Supply Voltage V CC Applied across P-N Terminals 8 Volts V CE(surge) Applied across P-N Terminals 1 Volts V D Applied between V UP1 -V UPC, 15 ± 1.5 Volts V VP1 -V VPC, V WP1 -V WPC *, V N1 -V NC Input ON Voltage V CIN(on) Applied between.8 Volts Input OFF Voltage V CIN(off) U P -V UPC, V P -V VPC, W P -V WPC, U N V N W N -V NC 4. Volts Arm Shoot-Through Blocking Time t dead For IPM's each Input gnal 3. µs * With ripple satisfying the following conditions, dv/dt swing 5V/µs, Variation 2V peak to peak. Sep.2

PM75CVA12 COLLECTOR-EMITTER VOLTAGE, V CE(SAT), (VOLTS) 3. 2. SATURATION VOLTAGE CHARACTERISTICS 1. V CIN = V 5 1 15 COLLECTOR CURRENT, I C COLLECTOR-EMITTER SATURATION VOLTAGE, V CE(SAT), (VOLTS) 3. 2. 1. COLLECTOR-EMITTER SATURATON VOLTAGE CHARACTERISTICS I C = 75A V CIN = V 13 15 17 CONTROL SUPPLY VOLTAGE, V D, (VOLTS) COLLECTOR CURRENT, I C 9 6 3 T j = 25 o C V CIN = V OUTPUT CHARACTERISTICS V D = 17V 1. 2. 3. COLLECTOR-EMITTER VOLTAGE, V CE(sat), (VOLTS) 15 13 SWITCHING TIMES, t on, t off, (µs) 1 1 SWITCHING TIME VS. COLLECTOR CURRENT t off 1 t on VCC = 6V 1-1 1 1 1 2 1 3 COLLECTOR CURRENT, I C SWITCHING TIMES, t c(on), t c(off), (µs) 1 1 1 SWITCHING TIME VS. COLLECTOR CURRENT V CC = 6V t c(off) t c(on) 1-1 1 1 1 2 1 3 COLLECTOR CURRENT, I C SWITCHING ENERGY, P SW(on), P SW(off), (mj/pulse) 1 2 1 1 SWITCHING LOSS CHARACTERISTICS P SW(off) P SW(on) P SW(off) 1 V CC = 6V 1-1 1 1 1 2 1 3 COLLECTOR CURRENT, I C REVERSE RECOVERY TIME, t rr, (µs) 1 1 REVERSE RECOVERY CURRENT VS. COLLECTOR CURRENT 1 1 2 I rr 1-1 t rr V CC = 6V 1 1 1-2 1 1 1 1 2 1 3 COLLECTOR CURRENT, I C 1 3 REVERSE RECOVERY CURRENT, I rr EMITTER CURRENT, I E 1 2 1 1 DIODE FORWARD CHARACTERISTICS V CIN = 15V T j = 25 C T j = 125 C 1 1. 2. 3. EMITTER-COLLECTOR VOLTAGE, V EC, (VOLTS) CIRCUIT CURRENT, I D, (ma) 15 1 5 CIRCUIT CURRENT VS. CARRIER FREQUENCY N-SIDE P-SIDE 1 2 3 CARRIER FREQUENCY, f C, (khz) Sep.2

PM75CVA12 SHORT CIRCUIT CURRENT TRIP LEVEL, () = 1. SUPPLY CIRCUIT UNDER VOLTAGE PROTECTION TRIP RESET LEVEL, UV t, UV r, (VOLTS) 1.2 1..8 OVER CURRENT TRIP LEVEL VS. SUPPLY VOLTAGE 13 15 17 CONTROL SUPPLY VOLTAGE, V D, (VOLTS) 15 13 11-6 CONTROL SUPPLY VOLTAGE TRIP-RESET LEVEL TEMPERATURE DEPENDENCY UV t UV r 2 1 18 JUNCTION TEMPERATURE, T j, ( C) SHORT CIRCUIT CURRENT TRIP LEVEL, () = 1. (NORMALIZED VALUE) TRANSIENT IMPEDANCE, Z th(j-c), 1.2 1..8 OVER CURRENT TRIP LEVEL TEMPERATURE DEPENDENCY -6 2 1 18 JUNCTION TEMPERATURE, T j, ( C) 1 1 1 1-1 1-2 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) SINGLE PULSE STANDARD VALUE = R th(j-c)q =.25 C/W 1-3 1-3 1-2 1-1 1 1 1 TIME, (s) FAULT OUTPUT PULSE WIDTH TRIP LEVEL, t FO () = 1. (NORMALIZED VALUE) TRANSIENT IMPEDANCE, Z th(j-c), 1.2 1..8 1 1 1 1-1 1-2 FAULT OUTPUT PULSE WIDTH VS. TEMPERATURE -6 2 1 18 JUNCTION TEMPERATURE, T j, ( C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi) SINGLE PULSE STANDARD VALUE = R th(j-c)f =.51 C/W 1-3 1-3 1-2 1-1 1 1 1 TIME, (s) Sep.2