N-Channel Enhancement-Mode Vertical DMOS FET Features Free from secondary breakdown Low power drive requirement Ease of paralleling Low C ISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain Applications Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) General Description This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Device Package Option TO-9 /BV DGS (V) R DS(ON) (max) (Ω) VN16 VN16N3-G 6 3.. -G indicates package is RoHS compliant ( Green ) Pin Configuration (ON) (min) Absolute Maximum Ratings Parameter Value Drain-to-source voltage Drain-to-gate voltage BV DGS Gate-to-source voltage ±V Operating and storage temperature -55 O C to +15 O C Soldering temperature* 3 O C Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Product Marking SiVN 1 6 Y Y W W SOURCE DRAIN GATE TO-9 (N3) YY = Year Sealed WW = Week Sealed = Green Packaging Package may or may not include the following marks: Si or TO-9 (N3) * Distance of 1.6mm from case for 1 seconds. 135 Bordeaux Drive, Sunnyvale, CA 9489 Tel: 48--8888 www.supertex.com
Thermal Characteristics Package (continuous) (ma) Notes: (continuous) is limited by max rated T j. (pulsed) Power Dissipation @T C = 5 O C (W) θ jc ( O C/W) θ ja ( O C/W) TO-9 35. 15 17 35. R (ma) RM Electrical Characteristics (T A = 5 O C unless otherwise specified) Sym Parameter Min Typ Max Units Conditions Drain-to-source breakdown voltage 6 - - V = V, = ma (th) Gate threshold voltage.8 -.4 V = V DS, = ma Δ(th) Change in (th) with temperature - -3.8-5.5 mv/ O C = V DS, = ma I GSS Gate body leakage - - 1 na = ± V, V DS = V SS (ON) R DS(ON) Zero gate voltage drain current On-state drain current Static drain-to-source on-state resistance Switching Waveforms and Test Circuit INPUT 1V V 1% t (ON) 9% t (OFF) - - - - 1 PULSE GENERATOR R GEN µa = V, V DS = Max Rating V DS =.8 Max Rating, = V, T A = 15C.5 - V A GS = 5.V, V DS = 5V..5 - = 1V, V DS = 5V - 3. 5. V Ω GS = 5.V, = 5mA -.5 3. = 1V, = A ΔR DS(ON) Change in R DS(ON) with temperature -.7 %/ O C = 1V, = A G FS Forward transductance 3 45 - mmho V DS = 5V, = 5mA C ISS Input capacitance - 55 65 C OSS Common source output capacitance - 5 C RSS Reverse transfer capacitance - 5. 8. t d(on) Turn-on delay time - 3. 5. t r Rise time - 5. 8. t d(off) Turn-off delay time - 6. 9. Notes: 1.. t f Fall time - 5. 8. pf ns = V, V DS = 5V, f = MHz = 5V, = A, R GEN = 5Ω V SD Diode forward voltage drop - 1. 1.8 V = V, I SD = A t rr Reverse recovery time - 4 - ns = V, I SD = A All D.C. parameters 1% tested at 5 O C unless otherwise stated. (Pulse test: 3µs pulse, % duty cycle.) All A.C. parameters sample tested. R L OUTPUT t d(on) t r t d(off) t F OUTPUT 1% 1% INPUT D.U.T. V 9% 9% 135 Bordeaux Drive, Sunnyvale, CA 9489 Tel: 48--8888 www.supertex.com
Typical Performance Curves 135 Bordeaux Drive, Sunnyvale, CA 9489 Tel: 48--8888 www.supertex.com 3
Typical Performance Curves (cont.) 1.1 Variation with Temperature 5. 4. On-Resistance vs. Drain Current = 5V B V D S S (normalized ) R D S(ON ) (ohms ) 3.. = 1V.9-5 5 1 15 T j (C).5 1.5..5 (amperes) Transfer Characteristics V (th) and R DS Variation with Temperature.5 V DS = 5V 1.6 1.9 (amperes ). 1.5 T A = -55C 5C 15C V G S(th ) (normalized ) 1.4 1. V (th) @ 1mA R DS @ 1V, A R DS @ 5V,.5A 1.6 1.3 R DS(ON) (normalized ).5.8.7 4 6 8 1 (volts).6.4-5 5 1 15 T j (C) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 1 1 75 f = 1MHz 8 V DS = 1V 4V C (picofarads) 5 C ISS V G S (volts ) 6 4 8 pf 5 C OSS C RSS 1 3 4 V DS (volts) 4 pf..4.6.8 Q G (nanocoulombs) 135 Bordeaux Drive, Sunnyvale, CA 9489 Tel: 48--8888 www.supertex.com 4
3-Lead TO-9 Package Outline (N3) D A Seating Plane 1 3 L b e1 e Front View c Side View E1 1 3 E Bottom View Dimensions (inches) Symbol A b c D E E1 e e1 L MIN.17.14.14.175.15.8.95.45.5 NOM - - - - - - - - - MAX.1...5.165.15.15.55.61* JEDEC Registration TO-9. * This dimension is not specified in the original JEDEC drawing. The value listed is for reference only. This dimension is a non-jedec dimension. Drawings not to scale. Supertex Doc.#: DSPD-3TO9N3, Version D848. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate product liability indemnification insurance agreement. Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. website: http//www.supertex.com. 9 All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-VN16 A9 5 135 Bordeaux Drive, Sunnyvale, CA 9489 Tel: 48--8888 www.supertex.com