VS-30ETH06SPbF, VS-30ETH06-PbF Hyperfast Rectifier, 30 FRED Pt FETURES Hyperfast recovery time Low forward voltage drop 3 D PK (TO-63) ase cathode 3 TO-6 Low leakage current 75 C operating junction temperature Meets MSL level, per J-STD-00, LF maximum peak of 60 C EC-Q qualified Material categorization: for definitions of compliance please see www.vishay.com/doc?999 3 3 N/C node N/C node VS-30ETH06SPbF VS-30ETH06-PbF PRIMRY CHRCTERISTICS I F(V) 30 V R 600 V V F at I F.34 V t rr typ. 8 ns T J max. 75 C Package D PK (TO-63), TO-6 Circuit configuration Single DESCRIPTION / PPLICTIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the C/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. SOLUTE MXIMUM RTINGS PRMETER SYMOL TEST CONDITIONS MX. UNITS Peak repetitive reverse voltage V RRM 600 V verage rectified forward current I F(V) T C = 3 C 30 Non-repetitive peak surge current I FSM T J = 5 C 00 Operating junction and storage temperatures T J, T Stg -65 to +75 C ELECTRICL SPECIFICTIONS (T J = 5 C unless otherwise specified) PRMETER SYMOL TEST CONDITIONS MIN. TYP. MX. UNITS reakdown voltage, blocking voltage V R, V R I R = 0 μ 600 - - I F = 30 -.0.6 Forward voltage V F I F = 30, T J = 50 C -.34.75 V R = V R rated - 0.3 50 Reverse leakage current I R T J = 50 C, V R = V R rated - 60 500 μ Junction capacitance C T V R = 600 V - 33 - pf Series inductance L S Measured lead to lead 5 mm from package body - 8.0 - nh V Revision: 7-Oct-7 Document Number: 9400 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
VS-30ETH06SPbF, VS-30ETH06-PbF Reverse recovery time t rr DYNMIC RECOVERY CHRCTERISTICS (T J = 5 C unless otherwise specified) PRMETER SYMOL TEST CONDITIONS MIN. TYP. MX. UNITS T J = 5 C - 3 - ns I F =.0, di F /dt = 50 /μs, V R = 30 V - 8 35 T J = 5 C - 77 - Peak recovery current I RRM I F = 30 T J = 5 C - 3.5 - di F /dt = 00 /μs T J = 5 C - 7.7 - V R = 00 V T J = 5 C - 65 - Reverse recovery charge Q rr T J = 5 C - 345 - nc THERML - MECHNICL SPECIFICTIONS PRMETER SYMOL TEST CONDITIONS MIN. TYP. MX. UNITS Maximum junction and storage temperature range T J, T Stg -65-75 C Thermal resistance, junction-to-case per leg R thjc - 0.7. Thermal resistance, junction-to-ambient per leg R thj Typical socket mount - - 70 C/W Thermal resistance, case-to-heatsink R thcs Mounting surface, flat, smooth, and greased - 0. - Weight Mounting torque Marking device Case style D PK (TO-63) Case style TO-6 -.0 - g - 0.07 - oz. 6.0 (5.0) - () 30ETH06S 30ETH06- kgf cm (lbf in) I F - Instantaneous Forward Current () 00 0 T J = 75 C T J = 50 C T J = 5 C 0 0.5.5.5 3 3.5 I R - Reverse Current (µ) 00 0 T J = 75 C T J = 50 C T J = 5 C T J = 0 C 0. T J = 5 C 0.0 0.00 0.000 0 0 00 300 400 500 600 V F - Forward Voltage Drop (V) V R - Reverse Voltage (V) Fig. - Typical Forward Voltage Drop Characteristics Fig. - Typical Values of Reverse Current vs. Reverse Voltage Revision: 7-Oct-7 Document Number: 9400 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
VS-30ETH06SPbF, VS-30ETH06-PbF C T - Junction Capacitance (pf) 00 0 T J = 5 C 0 0 00 300 400 500 600 V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W) 0. D = 0.50 D = 0.0 t D = 0. t D = 0.05 0.0 D = 0.0 Single pulse Notes: D = 0.0 (thermal resistance). Duty factor D = t /t.. Peak T J = P DM x Z thjc + T C 0.00 0.0000 0.000 0.00 0.0 0. t - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics P DM. llowable Case Temperature ( C) 80 60 40 0 0 Square wave (D = 0.50) Rated V R applied See note () DC 80 0 5 5 0 5 30 35 40 45 I F(V) - verage Forward Current () Fig. 5 - Maximum llowable Case Temperature vs. verage Forward Current Note () Formula used: T C = T J - (Pd + Pd REV ) x R thjc ; Pd = forward power loss = I F(V) x V FM at (I F(V) /D) (see fig. 6); Pd REV = inverse power loss = V R x I R ( - D); I R at V R = rated V R verage Power Loss (W) 90 80 70 60 50 40 30 0 DC RMS limit D = 0.0 D = 0.0 D = 0.05 D = 0. D = 0.0 D = 0.50 0 0 5 5 0 5 30 35 40 45 I F(V) - verage Forward Current () Fig. 6 - Forward Power Loss Characteristics Revision: 7-Oct-7 3 Document Number: 9400 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
VS-30ETH06SPbF, VS-30ETH06-PbF 90 80 70 I F = 30 I F = 5 00 00 V R = 00 V T J = 5 C T J = 5 C t rr (ns) 60 50 40 Q rr (nc) 800 600 I F = 30 I F = 5 30 400 0 V R = 00 V T J = 5 C T J = 5 C 0 0 00 di F /dt (/µs) Fig. 7 - Typical Reverse Recovery Time vs. di F /dt 00 0 0 00 di F /dt (/µs) Fig. 8 - Typical Stored Charge vs. di F /dt V R = 00 V L = 70 μh 0.0 Ω di F /dt adjust G D IRFP50 D.U.T. S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) t rr 0 I F t a tb () I RRM (4) Q rr 0.5 I RRM di (rec)m /dt (5) 0.75 I RRM () di F /dt () di F /dt - rate of change of current through zero crossing () I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. (4) Q rr - area under curve defined by t rr and I RRM t rr x I Q RRM rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Fig. - Reverse Recovery Waveform and Definitions Revision: 7-Oct-7 4 Document Number: 9400 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
VS-30ETH06SPbF, VS-30ETH06-PbF ORDERING INFORMTION TLE Device code VS- 30 E T H 06 S TRL PbF 3 4 5 6 7 8 9 - product - Current rating (30 = 30 ) 3 - E = single 4 - T = TO-0, D PK (TO-63) 5 - H = hyperfast recovery 6 - Voltage rating (06 = 600 V) 7 - S = D PK (TO-63) - = TO-6 8 - None = tube (50 pieces) TRL = tape and reel (left oriented, for D PK (TO-63) package) TRR = tape and reel (right oriented, for D PK (TO-63) package) 9 - PbF = lead (Pb)-free Dimensions Part marking information Packaging information SPICE model LINKS TO RELTED DOCUMENTS www.vishay.com/doc?9504 www.vishay.com/doc?95008 www.vishay.com/doc?9503 www.vishay.com/doc?9644 Revision: 7-Oct-7 5 Document Number: 9400 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T www.vishay.com/doc?900
Outline Dimensions D PK, TO-6 DIMENSIONS - D PK in millimeters and inches Conforms to JEDEC outline D PK (SMD-0) (3) L ()(3) E 4 c (E) (D) (3) Pad layout.00 MIN. (0.43) 9.65 MIN. (0.38) D L x e 3 H () x b x b C Detail 0.0 M M c ± 0.004 M E View - H (3) 7.90 (0.70) 5.00 (0.65).3 MIN. (0.08) Plating.64 (0.3).4 (0.096) (4) b, b3 3.8 MIN. (0.5) ase Metal Gauge plane Lead assignments Diodes. - node (two die)/open (one die)., 4. - Cathode 3. - node Lead tip 0 to 8 L3 L L4 Detail Rotated 90 CW Scale: 8: Seating plane (c) (b, b) Section - and C - C Scale: None c (4) SYMOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.06 4.83 0.60 0.90 D 6.86 8.00 0.70 0.35 3 0.00 0.54 0.000 0.0 E 9.65.67 0.380 0.40, 3 b 0.5 0.99 0.00 0.039 E 7.90 8.80 0.3 0.346 3 b 0.5 0.89 0.00 0.035 4 e.54 SC 0.0 SC b.4.78 0.045 0.070 H 4.6 5.88 0.575 0.65 b3.4.73 0.045 0.068 4 L.78.79 0.070 0. c 0.38 0.74 0.05 0.09 L -.65-0.066 3 c 0.38 0.58 0.05 0.03 4 L.7.78 0.050 0.070 c.4.65 0.045 0.065 L3 0.5 SC 0.0 SC D 8.5 9.65 0.335 0.380 L4 4.78 5.8 0.88 0.08 Notes () Dimensioning and tolerancing per SME Y4.5 M-994 () Dimension D and E do not include mold flash. Mold flash shall not exceed 0.7 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L, D and E (4) Dimension b and c apply to base metal only (5) Datum and to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-63 Document Number: 9504 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 3-Mar-09 Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com
Outline Dimensions D PK, TO-6 DIMENSIONS - TO-6 in millimeters and inches Modified JEDEC outline TO-6 (Datum ) () (3) E (3) L c E D Seating plane D(3) L C 3 C L () x e 0.0 M M Lead tip 3 x b 3 x b c Lead assignments Diodes. - node (two die)/open (one die)., 4. - Cathode 3. - node Plating c E Section - (4) ase b, b3 metal (b, b) (3) c (4) Section - and C - C Scale: None SYMOL MILLIMETERS INCHES MIN. MX. MIN. MX. NOTES 4.06 4.83 0.60 0.90.03 3.0 0.080 0.9 b 0.5 0.99 0.00 0.039 b 0.5 0.89 0.00 0.035 4 b.4.78 0.045 0.070 b3.4.73 0.045 0.068 4 c 0.38 0.74 0.05 0.09 c 0.38 0.58 0.05 0.03 4 c.4.65 0.045 0.065 D 8.5 9.65 0.335 0.380 D 6.86 8.00 0.70 0.35 3 E 9.65.67 0.380 0.40, 3 E 7.90 8.80 0.3 0.346 3 e.54 SC 0.0 SC L 3.46 4. 0.530 0.555 L -.65-0.065 3 L 3.56 3.7 0.40 0.46 Notes () Dimensioning and tolerancing as per SME Y4.5M-994 () Dimension D and E do not include mold flash. Mold flash shall not exceed 0.7 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L, D and E (4) Dimension b and c apply to base metal only (5) Controlling dimension: inches (6) Outline conform to JEDEC TO-6 except (maximum), b (minimum) and D (minimum) where dimensions derived the actual package outline www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 9504 Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com Revision: 3-Mar-09
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