B86...B86... PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collectoremitter saturation voltage Low noise between hz and khz omplementary types: B846...B8... (NPN) Pbfree (RoHS compliant) package ) Qualified according AE Q Pbcontaining package may be available upon special request 79
79 B86...B86... Type Marking Pin onfiguration Package B86A B86B B86BW B87A B87B B87BF B87BL B87BW B87 B87W B88A B88B B88BL B88BW B88 B88W B89B B89 B86B B86BW B86W As Bs Bs Es Fs Fs F Fs Gs Gs Js Ks K Ks Ls Ls 4Bs 4s 4Fs 4Fs 4Gs SOT SOT SOT SOT SOT TSFP TSLP SOT SOT SOT SOT SOT TSLP SOT SOT SOT SOT SOT SOT SOT SOT
B86...B86... Maximum Ratings Parameter Symbol Value Unit ollectoremitter voltage B86... B87..., B86... B88..., B89... ollectorbase voltage B86... B87..., B86... B88..., B89... V EO V BO 6 4 8 V Emitterbase voltage V EBO ollector current I ma Peak collector current I M Total power dissipation T S 7, B86B86 T S 8, B87BFB88BF T S, B87BL, B86BL T S 4, B86WB86W P tot mw Junction temperature T j Storage temperature T stg 6... Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs K/W B86B86 B87BFB88BF B87BL, B88BL B86WB86W 4 9 6 For calculation of R thja please refer to Application Note Thermal Resistance 79
B86...B86... Electrical haracteristics at T A =, unless otherwise specified Parameter Symbol Values Unit min. typ. max. D haracteristics ollectoremitter breakdown voltage V (BR)EO V I = ma, I B =, B86... I = ma, I B =, B87..., B86... I = ma, I B =, B88..., B89... 6 4 ollectorbase breakdown voltage V (BR)BO I = µa, I E =, B86... 8 I = µa, I E =, B87..., B86... I = µa, I E =, B88..., B89... Emitterbase breakdown voltage I E = µa, I = ollectorbase cutoff current V B = 4 V, I E = V B = V, I E =, T A = D current gain ) I = µa, V E = V, h FE grp.a I = µa, V E = V, h FE grp.b I = µa, V E = V, h FE grp. I = ma, V E = V, h FE grp.a I = ma, V E = V, h FE grp.b I = ma, V E = V, h FE grp. V (BR)EBO I BO h FE. 4 48 8 9 47 4 8 µa ollectoremitter saturation voltage ) V Esat mv I = ma, I B =. ma 7 I = ma, I B = ma 6 Base emitter saturation voltage ) V BEsat I = ma, I B =. ma 7 I = ma, I B =. ma 8 Baseemitter voltage ) V BE(ON) I = ma, V E = V 6 6 7 I = ma, V E = V 8 Pulse test: t < µs; D < % 4 79
B86...B86... Electrical haracteristics at T A =, unless otherwise specified Parameter Symbol Values Unit min. typ. max. A haracteristics Transition frequency f T MHz I = ma, V E = V, f = MHz ollectorbase capacitance cb. pf V B = V, f = MHz Emitterbase capacitance V EB =. V, f = MHz eb 8 Shortcircuit input impedance I = ma, V E = V, f = khz, h FE grp.a I = ma, V E = V, f = khz, h FE grp.b I = ma, V E = V, f = khz, h FE grp. Opencircuit reverse voltage transf. ratio I = ma, V E = V, f = khz, h FE grp.a I = ma, V E = V, f = khz, h FE grp.b I = ma, V E = V, f = khz, h FE grp. h e h e.7 4. 8.7. kω 4 Shortcircuit forward current transf. ratio I = ma, V E = V, f = khz, h FE grp.a I = ma, V E = V, f = khz, h FE grp.b I = ma, V E = V, f = khz, h FE grp. Opencircuit output admittance I = ma, V E = V, f = khz, h FE grp.a I = ma, V E = V, f = khz, h FE grp.b I = ma, V E = V, f = khz, h FE grp. Noise figure I =. ma, V E = V, f = khz, D f = Hz, R S = kω, B89, B8 Equivalent noise voltage I = ma, V E = V, RS = kω, f =... Hz, B86 h e h e 6 µs 8 6 F 4 db V n. µv 79
B86...B86... D current gain h FE = ƒ(i ) V E = V ollectoremitter saturation voltage I = ƒ(v Esat ), h FE = EHP8 EHP8 h FE Ι ma ma Ι....4 V. V Esat Baseemitter saturation voltage I = ƒ(v BEsat ), h FE = ollector cutoff current I BO = ƒ(t A ) V BO = V ma EHP79 4 na EHP8 Ι Ι B max typ..4.6.8 V. V BEsat T A 6 79
B86...B86... Transition frequency f T = ƒ(i ) V E = V ollectorbase capacitance cb = ƒ(v B ) Emitterbase capacitance eb = ƒ(v EB ) f T MHz EHP78 pf B(EB) 9 8 7 6 4 EB B ma Ι Total power dissipation P tot = ƒ(t S ) B86B86 4 8 6 V V B (V EB Total power dissipation P tot = ƒ(t S ) B87BF, B88BF 6 mw mw 7 Ptot 4 Ptot 7 8 9 7 6 4 6 7 9 4 6 7 9 T S T S 7 79
B86...B86... Total power dissipation P tot = ƒ(t S ) B87BL, B88BL Total power dissipation P tot = ƒ(t S ) B86WB86W mw mw Ptot 7 Ptot 7 7 7 4 6 7 9 4 6 7 9 T S T S Permissible Pulse Load P totmax /P totd = ƒ(t p ) B86/WB86/W P P tot max tot D t p = D T t p T EHP77 Permissible Puls Load R thjs = ƒ (t p ) B87BF, B88BF K/W D =....... RthJS D=....... 6 4 s t p 6 4 s t p 8 79
B86...B86... Permissible Pulse Load P totmax /P totd = ƒ(t p ) B87BF, B88BF Permissible Puls Load R thjs = ƒ (t p ) B87BL, B88BL Ptotmax/PtotD D=....... RthJS....... D = 6 4 s t p 7 6 4 s t p Permissible Pulse Load P totmax /P totd = ƒ(t p ) B87BL, B88BL Ptotmax/ PtotD D =....... 7 6 4 s t p 9 79
Package SOT B86...B86... Package Outline +. ).4..9 ±..9 B.9.4 ±.. MIN. MAX. ±.. MAX....8 MAX..8.... ±. A. M B. M A Foot Print ) Lead width can be.6 max. in dambar area.8.8..9..9 Marking Layout (Example) EH s Manufacturer, June Date code (YM) Pin BW66 Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel 4.9. 8..6 Pin.. 79
Package SOT B86...B86... Package Outline ±.. +.. x. M. MAX...9 ±. A.6.6.±.. MIN.. +... ±.. M A Foot Print.6 Marking Layout (Example) Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel 4.. 8.8.6.6.6 Manufacturer, June Date code (YM) Pin BR8W Type code Pin.. 79
Package TSFP B86...B86... Package Outline. ±.. ±.. ±..4 ±..4 ±.. ±.. ±.. ±.4. ±. MAX..8 ±. Foot Print.4.4..4.4 Marking Layout (Example) Manufacturer Pin BR847BF Type code Standard Packing Reel ø8 mm =. Pieces/Reel Reel ø mm =. Pieces/Reel 4.. 8.. Pin..7 79
Package TSLP B86...B86... Package Outline Top view Bottom view. MAX..4 +..6 ±. ). ±..6 ±. ). ±. ±. Pin marking ) Dimension applies to plated terminal. ±. ) x. ±. Foot Print For board assembly information please refer to Infineon website "Packages".. opper Solder mask Stencil apertures Marking Layout (Example) BFR9L Type code Pin marking Laser marking Standard Packing Reel ø8 mm =. Pieces/Reel 4..6 8 ) x. ±..6.....94.4.7.. R...7. Pin marking.76 79
B86...B86... Edition 6 Published by Infineon Technologies AG 876 München, Germany Infineon Technologies AG 7. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies omponents may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 4 79