Radiation Detection for the Beta- Delayed Alpha and Gamma Decay of 20 Na. Ellen Simmons

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Transcription:

Radiation Detection for the Beta- Delayed Alpha and Gamma Decay of 20 Na Ellen Simmons 1

Contents Introduction Review of the Types of Radiation Charged Particle Radiation Detection Review of Semiconductor Properties How we will detect them in this experiment Silicon Detectors Neutral Radiation Detection Photons and their interaction with matter How we will detect them in this experiment Germanium Detector 2

Review of the Basic Types of Radiation 3

Radiation Interactions The operation of any detector basically depends on the manner in which the radiation interacts with the material of the detector To understand the output of a detector, one must understand the behavior of radiation in different materials and the energy loss incurred therein 4

Charged/Neutral Radiation Charged Particulate Radiation Fast Electrons Beta Particles (pos. or neg.) emitted in nuclear decay Energetic electrons from any other process Heavy Charged Particles All energetic ions with one atomic mass (1u) or greater Examples are alpha particles, protons, fission products Neutral Radiation Electromagnetic Radiation Includes X-rays emitted in the rearrangement of electron shells of atoms, and gamma rays that originate from transitions within the nucleus itself Neutrons Generated in various nuclear processes Further divided into slow neutron and fast neutron subcategories 5

Categories of Radiation Soft Radiation (Alphas or Low Energy X-rays) Penetrate only small thicknesses of material Source must be deposited in very thin layers (μm) Sources that are physically thicker are subject to self-absorption Medium Radiation (Beta Particles) Generally more penetrating Sources can be up to a few tenths of a millimeter in thickness Hard Radiation (Gamma Rays or Neutrons) Much less affected by self-absorption Sources can be mm or cm in dimension 6

Charged Particle Radiation 7

Review of the Energy Band Valance Band Holes are created when electrons are excited enough to cross the energy gap and into the conduction band Band Gap (Energy Gap) No available energy levels Width depends on temperature, pressure and the material Large enough (in a semiconductor) that only a few electrons cross to the conduction band by thermal energy Conduction Band Highest energy band Region of free electrons Structure 8

Charged Particle Radiation When a charged particle passes through a semiconductor many electron-hole pairs (information carriers) are produced along the tack of the particle When radiation interacts with the material of a semiconductor, the energy deposited always leads to the creation of equal numbers of holes and electrons True regardless of whether the host semiconductor is pure, p-type or n- type. The quantity of practical interest for detector applications is the average energy expanded by the primary charged particle to produce one electron-hole pair. This quantity is often loosely called the ionization energy Experimentally observed to be independent of both the energy and type of the incident radiation 9

Charge Carriers When an electron is excited from the valence band into the conduction band it leaves a hole in the valance band Referred to as electron-hole pairs The motion of both of these charges contributes to the observed conductivity of the material With no E-field, thermally created electron-hole pairs eventually recombine, and an equilibrium is established The concentration of electron-hole pairs is a strong function of temperature Will decrease drastically if the material is cooled. 10

Motion of Charge Carriers The electrons in the conduction band can be made to move under the influence of an applied E-field. The hole, representing a net positive charge, will also tend to move in an applied field, but in a direction opposite that of the electron Their motion in an applied E-field generates the basic electrical signal received from the detector At higher E-field values, the drift velocity increases more slowly with the field. Eventually a saturation velocity is reached which becomes independent of further increases in the E-field Many semiconductors are operated with electric fields sufficiently high to result in a saturated drift velocity for the charge carriers 11

Semiconductor Detectors To reduce statistical limits on energy resolution need to increase the number of information carriers per pulse Semiconductor detectors offer more carriers per pulse than any other commonly used detector Main Advantage: Smallness of the ionization energy required ~3 ev to create one carrier As opposed to ~30 ev required in gas-filled detectors Main Disadvantage: Limited to small sizes and are very susceptible to radiation-induced damage 12

n-type / p-type Semiconductors Pure Semiconductor The number of holes equals the number of electrons in the conduction band This balance can be changed by introducing a small amount of impurity atoms which have one more or one less valence electron in their outer atomic shell Doped Semiconductors The n-type Semiconductor More conduction electrons and fewer holes than in the pure material Donor Impurities Electrical conductivity is determined by the flow of electrons Electrons are Majority Carriers, Holes are Minority Carriers. The p-type Semiconductor More holes and fewer electrons than in the pure material Accepter Impurities Electrical conductivity is determined by the holes Hole are Majority Carriers, Electrons are Minority Carriers 13

Silicon Detectors For charged particle detection, silicon is the most widely used semiconductor material Advantages Room temperature operation Wide Availability Disadvantage Relatively Small Size Most devices are limited to surface areas of a few ten s of square cm 14

β Detector Continuous detector This is 1000 μm thick Example spectrum The 228 Th source Alphas Beta Continuum 15

Alpha Detector Two-side Silicon Strip Detector Thickness: 65μm 16 Strips on each side Strips are 3mm Wide Example of 228 Th 16

Neutral Radiation 17

Photon Properties Photons are invisible to our detectors Unlike charged particles, photons can not undergo inelastic collisions with the atomic electrons of a material (absorber or detector). A beam of photons is not degraded in energy when it passes through matter, it only becomes attenuated in intensity I ( x) = I 0 exp( μx) Only photons which have not interacted with the material will pass through. 18

Photon Interactions in Matter Three main photon interactions with matter: Photoelectric Effect Compton Scattering Pair Production 19

Photoelectric Effect (1) Predominate for gamma-rays of relatively low energy (up to several hundred kev). Involves the absorption of the gamma-ray photon by an atomic electron. There is then a subsequent ejection of an electron from the atom. Energy of the outgoing electron is then E = hν B.E.. 20

Photoelectric Effect (2) If process is non-relativistic Born approximation gives Φphoto = Cross-Section dependence Proportional to Z to about 5 th power Energy Dependence To the power of (7/2) 4 7/ 2 Higher Z materials are more favored for photoelectric absorption 5 4α 2Z φ ( m c / hν ) 0 e 2 21

Compton Scattering Cross-section is the Klein-Nishina formula: dσ = dω 2 zr 0 1 1+ α ( 1 cosθ ) 2 1+ cos 2 2 θ 1+ 2 α 2 ( 1 cosθ ) ( 1+ α 1 cosθ ) 2 ( 1+ cos θ ) ( ) Depends linearly on Z Predominate interaction in the energy range of about 1 to 5 MeV 22

Pair Production Predominate for high-energy gamma rays (above 5-10 MeV) Photon is transformed into an electron-positron pair. Minimum energy required is ~1.02 MeV The interaction must take place in the coulomb field of a nucleus Cross Section varies approximately as (Z^2) 23

Interaction Summary 24

Gamma Rays Gamma radiation is emitted by excited nuclei when they transition to lower-lying nuclear levels. Electromagnetic Radiation of the shortest wavelengths (below about 10 pm) and highest energy Consist of high energy photons with energies above 100 kev More penetrating then alpha or beta particles 25

What Gamma Rays Tell Us One of the primary ways to learn about the structure of excited nuclear states. Spectra give energies and intensities of the transitions. Coincidence measurements give info about how transitions might be arranged among the excited states. Internal conversion coefficients can give info on the character of the radiation and the relative spins and parities of the initial and final states. Angular distribution and correlation measurements also help in this area Absolute transition probabilities can be found from the half-lives of the levels 26

Germanium Detectors Advantages Good energy resolution for gamma-rays above several hundred kev Few tenths of a percent (compared to 5-10% of NaI) Disadvantages Smaller size and lower Z give an order of magnitude less efficiency than NaI Need to be operated at LN 2 temperatures 27

Ideally Large Detector Detector is large enough that all secondary radiations interact within the detector active volume and none escape from its surface 28

Ideally Small Detector (1) Small compared to the mean free path of the secondary gamma radiations (~1 to 2 cm). Assuming incident gammaray energy is below the value at which pair production is significant 29

Ideally Small Detectors (2) Now, assuming incident gamma-ray energy is several MeV Pair production results can be seen in the spectrum Both annihilation photons escape without further interaction and a double escape peak is seen ~1.02 MeV below the photopeak 30

Normal Sized Detectors (1) When pair production is not significant At energies less than ~100 kev, the Compton continuum may effectively disappear 31

Normal Sized Detectors (2) When pair production becomes significant When both annihilation photons escape Double escape peak. When one annihilation photon escapes (other is totally absorbed) Single escape peak appears ~0.511 MeV below the photopeak 32

Example Spectrum 33

References G. F. Knoll Radiation Detection and Measurement (John Wiley & Sons, Inc 2000) W. R. Leo Techniques for Nuclear and Particle Physics Experiments (Springer-Verlag 1987) R. D Evans The Atomic Nucleus (McGraw-Hill, Inc 1955) 34