SPP15N6CFD CoolMOS TM Power Transistor Features Intrinsic fast-recovery body diode Extremely low reverse recovery charge Ultra low gate charge Extreme dv /dt rated High peak current capability Product Summary V DS @ Tjmax R DS(on),max I D 65.33 13.4 PG-TO V " A Qualified for industrial grade applications according to JEDEC 1) CoolMOS CFD designed for: Softswitching PWM Stages LCD & CRT TV Type Package Marking SPP15N6CFD PG-TO 15N6CFD Maximum ratings, at T j =5 C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D T C =5 C 13.4 A T C =1 C Pulsed drain current ) I D,pulse T C =5 C 8.4 33 Avalanche energy, single pulse E AS I D =6.7 A, V DD =5 V 46 mj Avalanche energy, repetitive ),3) E AR I D =13.4 A, V DD =5 V.8 Avalanche current, repetitive ),3) I AR 13.4 A Drain source voltage slope dv /dt I D =13.4 A, V DS =48 V, T j =15 C 8 V/ns Reverse diode dv /dt dv /dt I S =13.4 A, V DS =48 V, 4 V/ns Maximum diode commutation speed di /dt T j =15 C 6 A/µs Gate source voltage V GS static ± V AC (f >1 Hz) ±3 Power dissipation P tot T C =5 C 156 W Operating and storage temperature T j, T stg -55... 15 C Mounting torque M3 & 3.5 screws 6 Ncm Rev. 1.3 page 1 9-11-3
SPP15N6CFD Parameter Symbol Conditions Values Unit min. typ. max. Thermal characteristics Thermal resistance, junction - case R thjc - -.8 K/W Thermal resistance, junction - ambient R thja leaded - - 6 Soldering temperature, wave soldering only allowed at leads T sold 1.6 mm (.63 in.) from case for 1 s - - 6 C Electrical characteristics, at T j =5 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS = V, I D =5 µa 6 - - V Avalanche breakdown voltage V (BR)DS V GS = V, I D =13.4 A - 7 - Gate threshold voltage V GS(th) V DS =V GS, I D =75 µa 3 4 5 Zero gate voltage drain current I DSS V DS =6 V, V GS = V, T j =5 C - 1.4 - µa V DS =6 V, V GS = V, T j =15 C - 1 - Gate-source leakage current I GSS V GS = V, V DS = V - - 1 na Drain-source on-state resistance R DS(on) V GS =1 V, I D =9.4 A, T j =5 C -.8.33 " V GS =1 V, I D =9.4 A, T j =15 C -.78 - Gate resistance R G f =1 MHz, open drain - 1.3 - Transconductance g fs V DS > I D R DS(on)max, I D =9.4 A - 8 - S Rev. 1.3 page 9-11-3
SPP15N6CFD Parameter Symbol Conditions Values Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 18 - pf Output capacitance C oss V GS = V, V DS =5 V, - 5 - f =1 MHz Reverse transfer capacitance C rss - 1 - Effective output capacitance, energy related 4) C o(er) V GS = V, V DS = V - 61 - to 48 V Effective output capacitance, time related 5) C o(tr) - 11 - Turn-on delay time t d(on) - 43 - ns Rise time t r V DD =4 V, V GS =1 V, I D =13.4 A, - 4 - Turn-off delay time t d(off) R G =3.6 " - 47 - Fall time t f - 5 - Gate Charge Characteristics Gate to source charge Q gs - 11 - nc Gate to drain charge Q gd V DD =48 V, - 38 - I D =13.4 A, Gate charge total Q g V GS = to 1 V - 63 84 Gate plateau voltage V plateau - 7.3 - V 1) J-STD and JESD ) Pulse width t p limited by T j,max 3) Repetitive avalanche causes additional power losses that can be calculated asp AV =E AR *f. 4) C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from to 8% V DSS. 5) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from to 8% V DSS. Rev. 1.3 page 3 9-11-3
SPP15N6CFD Parameter Symbol Conditions Values Unit min. typ. max. Reverse Diode Diode continuous forward current I S - - 13.4 A T C =5 C Diode pulse current ) I S,pulse - - 33 Diode forward voltage V SD V GS = V, I F =I S, T j =5 C - 1. 1. V Reverse recovery time t rr - 147 - ns Reverse recovery charge Q rr V R =48 V, I F =I S, di F /dt =1 A/µs - 1 - µc Peak reverse recovery current I rrm - 1 - A Peak rate of fall of reverse recovery current di rr / dt T j =5 C - 1 - A/µs Rev. 1.3 page 4 9-11-3
SPP15N6CFD 1 Power dissipation Safe operating area P tot =f(t C ) I D =f(v DS ); T C =5 C; D = parameter: t p 16 1 limited by on-state resistance 14 1 µs 1 1 µs 1 1 1 1 µs P tot [W] 8 6 I D [A] 1 DC 1 ms 1 ms 4 4 8 1 16 1-1 1 1 1 1 1 3 T C [ C] V DS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics I D =f(v DS ); T j =5 C I D =f(v DS ); T j =5 C parameter: D=t p /T parameter: V GS 1 35 3 V 1 V.5 5. 8 V Z thjc [K/W] 1-1.1.5 I D [A] 15. 7 V.1 1 single pulse 6.5 V 5 6 V 5.5 V 1-1 -5 1-4 1-3 1-1 -1 5 V 5 1 15 t p [s] V DS [V] Rev. 1.3 page 5 9-11-3
5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D =f(v DS ); T j =15 C R DS(on) =f(i D ); T j =15 C SPP15N6CFD parameter: V GS parameter: V GS V 1 V 8 V 1.8 1.6 15 1.4 I D [A] 1 7 V 6.5 V R DS(on) [ ] 1. 1.8 5 V 5.5 V 6 V 6.5 V 7 V 1 V V 5 6 V 5.5 V.6.4 5 V. 5 1 15 V DS [V] 4 6 8 1 1 I D [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on) =f(t j ); I D =9.4 A; V GS =1 V I D =f(v GS ); V DS > I D R DS(on)max parameter: T j 1 5.8 4 5 C R DS(on) [ ].6.4 98 % I D [A] 3 15 C typ. 1-6 - 6 1 14 18 T j [ C] 4 6 8 1 1 V GS [V] Rev. 1.3 page 6 9-11-3
SPP15N6CFD 9 Typ. gate charge 1 Forward characteristics of reverse diode V GS =f(q gate ); I D =13.4 A pulsed I F =f(v SD ) parameter: V DD parameter: T j 1 1 V 1 8 48 V 1 1 5 C 15 C, 98% 6 15 C V GS [V] I F [A] 5 C, 98% 4 1 4 6 8 Q gate [nc] 1-1.5 1 1.5 V SD [V] 11 Avalanche SOA 1 Avalanche energy I AR =f(t AR ) E AS =f(t j ); I D =6.7 A; V DD =5 V parameter: T j(start) 14 48 1 4 1 36 3 I AV [A] 8 6 15 C 5 C E AS [mj] 4 18 4 1 6 1-3 1-1 -1 1 1 1 t AR [µs] 1 1 3 1 4 5 75 15 175 T j [ C] Rev. 1.3 page 7 9-11-3
SPP15N6CFD 13 Drain-source breakdown voltage 14 Typ. capacitances V BR(DSS) =f(t j ) C =f(v DS ); V GS = V; f =1 MHz 7 1 4 Ciss 66 1 3 V BR(DSS) [V] 6 C [pf] 1 Coss Crss 58 1 1 54-6 - 6 1 14 18 T j [ C] 1 1 3 4 5 V DS [V] 15 Typ. C oss stored energy 16 Typ. reverse recovery charge E oss = f(v DS ) Q rr =f(t j );parameter: I D =13.4 A 1 1 1.8 8 1.6 E oss [µj] 6 Q rr [µc] 1.4 4 1. 1 3 4 5 6 V DS [V] 1 5 5 75 1 15 T j [ C] Rev. 1.3 page 8 9-11-3
SPP15N6CFD 17 Typ. reverse recovery charge 18 Typ. reverse recovery charge Q rr =f(i S ); parameter: di/ dt =1 A/µs Q rr =f(di /dt ); parameter: I D =13.4 A 3 1.8 1.6 15 C.5 1.4 15 C 1. Q rr [µc] 1.8 5 C Q rr [µc] 1.5 5 C.6 1.4.5. 3 5 7 9 11 13 I S [A] 1 3 4 5 d i/d t [A/µs] Rev. 1.3 page 9 9-11-3
SPP15N6CFD Definition of diode switching characteristics Rev. 1.3 page 1 9-11-3
SPP15N6CFD PG-TO--3--1; -3-1 Dimensions in mm/ inches Rev. 1.3 page 11 9-11-3
SPP15N6CFD Published by Infineon Technologies AG 8176 Munich, Germany 8 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.3 page 1 9-11-3
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