LED ARRAY Pb Lead-Free Parts LA158B/VG.SBKS.VY-R1-PF DATA SHEET DOC. NO : QW95-LA158B/VG.SBKS.VY-R1-PF REV. : A DATE : 8 - Dec. - 25
Package Dimensions Page 1/7 LA158B/VG.SBKS.VY-R1-PF 1st 5.8 ±.3 12.85 2nd 3rd 1.16 3.3 3.3 1.78 1st 2nd 3rd TYP 3.2± 2.54TYP - + 6.89± 9.43± 11.97± LSBKS11241 LVG21541-PF LVY21541-PF 3.5 3.5 ψ1.8 2.4 ψ1.8 2.4 MAX 1.6 3. MAX 2.6 4. 25.MIN 25.MIN TYP TYP 2.54TYP MIN 2.54TYP MIN + - + - Note : 1.All dimension are in millimeter tolerance is ±.25mm unless otherwise noted. 2.Specifications are subject to change without notice.
Page 2/7 Absolute Maximum Ratings at Ta=25 Parameter Symbol VG Absolute Maximum Ratings SBKS VY UNIT Forward Current Peak Forward Current Duty 1/1@1KHz IF 3 3 IFP 12 1 3 ma 6 ma Power Dissipation PD 1 12 75 mw Reverse Current @5V Ir 1 5 1 μa Electrostatic Discharge( * ) ---- ESD 5 2 V Operating Temperature Topr -2 ~ +8 * Storage Temperature Tstg -3 ~ +1 Static Electricity or power surge will damage the LED. Use of a conductive wrist band or anti-electrosatic glove is recommended when handing these LED. All devices, equipment and machinery must be properly grounded. Typical Electrical & Optical Characteristics (Ta=25 ) PART NO MATERIAL COLOR Emitted Lens Peak wave length λpnm Dominant wave length λdnm Spectral halfwidth λnm Forward voltage @2mA(V) Min. Typ. Max. Min. Luminous intensity @2mA(mcd) Typ. Viewing angle 2θ 1/2 (deg) Gap Green Green Transparent 565 ---- 3 1.7 ---- 2.6 9 16 2 LA158B/VG.SBKS.VY-R1-PF InGaN/SiC Blue Blue Transparent ---- 475 26 ---- 3.5 4.2 3 55 2 AlGaInP Yellow Yellow Transparent ---- 59 2 1.7 2.6 ---- 7 11 2 Note : 1.The forward voltage data did not including ±.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance.
Page 3/7 Typical Electro-Optical Characteristics Curve VG CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 1 3.5 1 1.1 Relative Intensity Normalize @2mA 3. 2.5 2.. 2. 3. 4. 5. 1 1 1 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature Fig.4 Relative Intensity vs. Temperature Forward Voltage@2mA Normalize @25 1.2 1.1.9.8-4 -2 2 4 6 8 1 Relative Intensity@2mA Normalize @25 3. 2.5 2.. -4-2 2 4 6 8 1 Fig.5 Relative Intensity vs. Wavelength Relative Intensity@2mA. 5 55 6 65 Wavelength (nm)
Page 4/7 Typical Electro-Optical Characteristics Curve SBK-S CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3 25 2 15 1 5 Relative Intensity Normalize @2mA 1.25.75.25 1 2 3 4 5 5 1 15 2 25 3 Forward Voltage(V) Fig.3 Forward Current vs. Temperature Fig.4 Relative Intensity vs. Wavelength Forward Current@2mA 4 3 2 1 25 5 75 1 Relative Intensity@2mA 38 43 48 53 58 63 68 Wavelength (nm)
Page 5/7 Typical Electro-Optical Characteristics Curve VY CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 1 3. 1 1.1 Relative Intensity Normalize @2mA 2.5 2.. 2. 2.5 3. 1 1 1 Forward Voltage(V) Fig.3 Forward Voltage vs. Temperature Fig.4 Relative Intensity vs. Temperature 1.2 3. Forward Voltage@2mA Normalize @25 1.1.9.8-4 -2 2 4 6 8 1 Relative Intensity@2mA Normalize @25 2.5 2.. -4-2 2 4 6 8 1 Fig.5 Relative Intensity vs. Wavelength Relative Intensity@2mA. 5 55 6 65 Wavelength (nm)
Page 6/7 Soldering Condition(Pb-Free) 1.Iron: Soldering Iron:3W Max Temperature 35 C Max Soldering Time:3 Seconds Max(One Time) Distance:2mm Min(From solder joint to case) 2.Wave Soldering Profile Dip Soldering Preheat: 12 C Max Preheat time: 6seconds Max Ramp-up 2 C/sec(max) Ramp-Down:-5 C/sec(max) Solder Bath:26 C Max Dipping Time:3 seconds Max Distance:2mm Min(From solder joint to case) Temp( C) 26 26 C3sec Max 5 /sec max 12 25 Preheat 2 /sec max 5 1 15 Time(sec) 6 Seconds Max
Page 7/7 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=2mA 3.t=1 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-75: 126 MIL-STD-883: 15 JIS C 721: B-1 High Temperature Storage Test 1.Ta=15 ±5 2.t=1 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of high temperature for hours. MIL-STD-883:18 JIS C 721: B-1 Low Temperature Storage Test 1.Ta=-4 ±5 2.t=1 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. JIS C 721: B-12 High Temperature High Humidity Test 1.Ta=65 ±5 2.RH=9%~95% 3.t=24hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. MIL-STD-22:13B JIS C 721: B-11 Thermal Shock Test 1.Ta=15 ±5 &-4 ±5 (1min) (1min) 2.total 1 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-22: 17D MIL-STD-75: 151 MIL-STD-883: 111 Solder Resistance Test 1.T.Sol=26 ±5 2.Dwell time= 1 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-22: 21A MIL-STD-75: 231 JIS C 721: A-1 Solderability Test 1.T.Sol=23 ±5 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-22: 28D MIL-STD-75: 226 MIL-STD-883: 23 JIS C 721: A-2