Description United Silicon Carbide, Inc. offers the xr series of high performance SiC Schottky diodes. With zero reverse recovery charge and 175 C maximum junction temperature, USCi s diodes are ideally suited for high frequency and high efficiency power systems with minimum cooling requirements. xr SiC Series 1A - 12 SiC Schottky Diode UJ2D121T. CASE CASE 1 2 1 2 Part Number Package Marking UJ2D121T TO-22-2L UJ2D121T Features Typical Applications Positive temperature coefficient for safe operation and ease of Power converters paralleling Industrial motor drives 175 C maximum operating junction temperature Switching-mode power supplies Extremely fast switching not dependent on temperature Power factor correction modules Essentially no reverse or forward recovery RoHS compliant Maximum Ratings Parameter DC blocking voltage Repetitive peak reverse voltage, T j =25 C Repetitive forward surge current sine halfwave, D=.1 Symbol R RRM RSM I F I FRM E AS Test Conditions T C = 142 C alue Surge peak reverse voltage 12 Maximum DC forward current Non-repetitive forward surge current sine halfwave Non-repetitive avalanche energy I FSM 12 12 1 T C = 25 C, t p = 1ms 75 T C = 11 C, t p =1ms 6 T C = 25 C, t p = 1ms 35 T C = 11 C, t p =1ms 21.8 T j = 25 C, L = 1mH, Ipk=4.1A, DD =1 88 Units A A A mj Power dissipation Maximum junction temperature Operating and storage temperature Soldering temperatures, wavesoldering only allowed at leads T C = 25 C 136 P Tot T C = 142 C 3 W T J,max 175 C T J, T STG -55 to 175 C T sold 1.6mm from case for 1s 26 C Rev. B, October 216 1 For more information go to www.unitedsic.com.
Reverse Current, I R (A) Forward Current, I F (A) Electrical Characteristics xr SiC Series 1A - 12 SiC Schottky Diode UJ2D121T. T J = +25 C unless otherwise specified Forward voltage Total capacitive charge (1) Min Typ Max - 1.5 1.7-2.5 3-3 25-6 8 Q C R =8 47 nc Total capacitance C R =1, f=1mhz R =4, f=1mhz R =8, f=1mhz 5 45 35 pf Capacitance stored energy E C R =8 12.2 mj (1) See Figure 8, Q c is independent on T j, di F /dt, and I F as shown in the application note USCi_AN11. Thermal characteristics Parameter Symbol Test Conditions I F = 1A, T J = 25 C I F = 1A, T J =175 C Reverse current I R R =12, T j =25 C R =12, T J =175 C F alue Units ma Thermal resistance Parameter alue symbol Test Conditions Units Min Typ Max R qjc.83 1.1 C/W Typical Performance 1.E-4 1-4 2 1.E-5 1-5 15 1-6 1.E-6 1-7 1.E-7-55 C 5 1.E-8 1-8 25 C 175 C 1.E-9 1-9 5 6 7 8 9 1 11 12 1-55 C 25 C 1 C 15 C 175 C 1 2 3 4 5 Forward oltage, F () Figure 1 Typical reverse characteristics Figure 2 Typical forward characteristics Rev. B, October 216 2 For more information go to www.unitedsic.com.
Capacitance, C (pf) Max. Thermal Impedance, Z qjc ( C/W) Power Disspiation, P Tot (W) Forward Current,I F (A) xr SiC Series 1A - 12 SiC Schottky Diode UJ2D121T. 15 1 12 1 8 6 D =.1 D =.3 D =.5 D =.7 D = 1. 5 4 2 25 5 75 1 125 15 175 T C ( C) Figure 3 Power dissipation 25 5 75 1 125 15 175 T C ( C) Figure 4 Diode forward current 7 6 1 5 4 3 2 1.1 D =.5 D =.3 D =.1 D =.5 D =.2 Single Pulse.1 1 1 1 1 Figure 5 Capacitance vs. reverse voltage.1 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 Time, t (s) Figure 6 Maximum transient thermal impedance Rev. B, October 216 3 For more information go to www.unitedsic.com.
E C (mj) Q C (nc) xr SiC Series 1A - 12 SiC Schottky Diode UJ2D121T. 25 7 2 6 5 15 4 1 3 5 2 1 Q C = R C d 2 4 6 8 1 12 2 4 6 8 1 12 Figure 7 Typical capacitance stored energy vs. reverse voltage Figure 8 Typical capacitive charge vs. reverse voltage Disclaimer United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies within. Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc. products and services described herein. Rev. B, October 216 4 For more information go to www.unitedsic.com.
TO 22 2L OUTLINE TO 22 2L DIODE OUTLINE, MARK AND TUBE.. Rev. B, October 216 1 For more information go to www.unitedsic.com.
PART MARKING TO 22 2L DIODE OUTLINE, MARK AND TUBE.. U = JXD = X = AA = BB = T = USCi DIODE GENERATION OLTAGE RATING CURRENT RATING TO 22 2L DDDD= DATE CODE LLLL = LOT CODE TO 22 2L TUBE OUTLINE Disclaimer 5 units per tube United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any errors or inaccuracies within. United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon Carbide, Inc. products and services described herein. Information on all products and contained herein is intended for description only. No license, express or implied, to any intellectual property rights is granted within this document. Rev. B, October 216 2 For more information go to www.unitedsic.com.
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