TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U MOSⅢ) Motor Drive Application Load Swithch Application Chopper Regulator and DC DC Converter Application Unit: mm Low drain-source ON resistance: R DS (ON) = 9 mohm (typ.) High forward transfer admittance: Yfs = S (typ.) Low leakage current: I DSS = ua (max) (VDS = 6 V) Enhancement mode: Vth =. to. V (VDS = V, ID = ma) Maximum Ratings (Ta = C) Characteristics Symbol Rating Unit Drain source voltage V DSS 6 V Drain gate voltage (R GS = kω) V DGR 6 V Gate source voltage V GSS ± V Drain current DC (Note ) I D A Pulse (Note ) I DP 9 A Drain power dissipation (Tc = C) P D W Single pulse avalanche energy (Note ) E AS 8 mj Avalanche current I AR A Repetitive avalanche energy (Note ) E AR mj Channel temperature (Note ) T ch 7 C JEDEC JEITA TOSHIBA : Gate : Drain : Source Weight :.7 g (typ.) SC-67 -UB Storage temperature range (Note ) T stg ~7 C Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case R th (ch c) C / W Thermal resistance, channel to ambient R th (ch a) 6. C / W Note : Please use devices on condition that the channel temperature is below C. Note : V DD = V, T ch = C (initial), L = 87 mh, R G = W, I AR = A Note : Repetitive rating: Pulse width limited by maximum channel temperature Note : The definition of maximum rating condition for both channel temperature and storage temperature range are refered form AEC-Q. This transistor is an electrostatic sensitive device. Please handle with caution. 6--
Electrical Characteristics (Ta = C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current I GSS V GS = ±6 V, V DS = V ± ma Drain cut off current I DSS V DS = 6 V, V GS = V ma Drain source breakdown voltage V (BR) DSS I D = ma, V GS = V 6 V (BR) DSX I D = ma, V GS = - V V Gate threshold voltage V th V DS = V, I D = ma.. V Drain source ON resistance R DS (ON) V GS =. V, I D = A V GS = V, I D = A 9 6 mw Forward transfer admittance Y fs V DS = V, I D = A 7 S Input capacitance C iss 9 Reverse transfer capacitance C rss V DS = V, V GS = V, f = MHz pf Output capacitance C oss Switching time Rise time t r V V GS I D = A V OUT V Turn on time t on. W 6.7 W Fall time t f 8 V DD ~ - V Turn off time t off Duty < = %, t w = ms 8 ns Total gate charge (Gate source plus gate drain) Q g 6 Gate source charge Q gs V DD 8 V, V GS = V, I D = A 6 Gate drain ( miller ) charge Q gd nc Source Drain Ratings and Characteristics (Ta = C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note ) Pulse drain reverse current (Note ) I DR A I DRP 9 A Forward voltage (diode) V DSF I DR = A, V GS = V. V Reverse recovery time t rr I DR = A, V GS = V ns Reverse recovered charge Q rr di DR / dt = A / ms nc Marking K A 6 J Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 6--
Tc = C. I D V DS 8 6...7...7.8..6. 8 6 6 7. 8 I D V DS. Tc = C. 6 8 8 6 VDS = V I D V GS Tc = - C Drain-source voltage VDS (V).6..8. V DS V GS ID = A 7. Tc = C 6 8 8 6 Gate-source voltage V GS (V) Gate-source voltage V GS (V) Forward transfer admittance ïyfsï (S) VDS = V ïy fs ï - I D Tc = - C Drain-source ON resistance RDS (ON) (mw). Tc = C R DS (ON) - I D VGS =. V Drain Current I D (A) Drain Current I D (A) 6--
Drain-source ON resistance RDS (ON) (mw) VGS = V R DS (ON) - Tc ID = A 7., 7. Drain reverse current IDR (A). - I DR - V DS Tc = C -8-8 6 Case temperature Tc ( C)...8..6. Capacitance - V DS V th - Tc Capacitance C (pf) Ciss Coss Crss VGS = V f = MHz Tc = C. Gate threshold voltage Vth (V) VDS = V ID = ma -8-8 6 Case temperature Tc ( C) Drain power dissipation PD (W) P D - Tc Drain-source voltage VDS (V) 8 6 VDS Dynamic input/output characteristics VGS V V VDS = 8V ID = A Tc = C Gate-source voltage VGS (V) 7 7 6 Case temperature Tc ( C) Total gate charge Q g (nc) 6--
r th t w Normalized transient thermal impedance rth (t)/rth (ch-c). Duty=..... Single Pulse. Duty = t/t Rth (ch-c) =. C/W. m m m m m PDM t T Pulse width t w (S) ID max (Pulse) * Safe operating area E AS T ch ID max (continuous) DC operation Tc = C ms * ms * Avalanche energy EAS (mj) 8 6. *: Single nonrepetitive pulse Tc = C Curves must be derated linearly with increase in temperature... VDSS max 7 7 Channel temperature (initial) Tch ( C) V V B VDSS I AR V DD V DS Test circuit R G = W V DD = V, L = 87 mh Wave form æ ö = ç BVDSS ΕAS L I è BVDSS - VDD ø 6--
RESTRICTIONS ON PRODUCT USE 66EAA The information contained herein is subject to change without notice. _D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. _A The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. _B The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. 66_Q The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. _C 6 6--