Chem 241. Lecture 21. UMass Amherst Biochemistry... Teaching Initiative

Similar documents
Chem 241. Lecture 20. UMass Amherst Biochemistry... Teaching Initiative

Chem 241. Lecture 23. UMass Amherst Biochemistry... Teaching Initiative

Chem 241. Lecture 24. UMass Amherst Biochemistry... Teaching Initiative

Ionic Bonding. Chem

ELEMENTARY BAND THEORY

CHM 511 chapter 3 page 1 of 23

Introduction to Engineering Materials ENGR2000. Dr.Coates

HW# 5 CHEM 281 Louisiana Tech University, POGIL(Process Oriented Guided Inquiry Learning) Exercise on Chapter 3. Structures of Ionic Solids. Why?

Lecture 04 Structure of Ceramics 1 Ref: Barsoum, Fundamentals of Ceramics, Ch03, McGraw-Hill, 2000.

Inorganic Chemistry I (CH331) Solid-state Chemistry I (Crystal structure) Nattapol Laorodphan (Chulabhorn Building, 4 th Floor)

E12 UNDERSTANDING CRYSTAL STRUCTURES

Metallic & Ionic Solids. Crystal Lattices. Properties of Solids. Network Solids. Types of Solids. Chapter 13 Solids. Chapter 13

Solids. properties & structure

Structures of Solids. Unit Cells - Not(?) Chapter 4 Ionic and Other Inorganic Solids. CHEM 462 Wednesday, September 22 T.

SOLID STATE CHEMISTRY

Bonding in Solids. Section 4 (M&T Chapter 7) Structure and Energetics of Metallic and Ionic Solids. Close-Packing

FIRST MIDTERM EXAM Chemistry March 2011 Professor Buhro

Chapter 3 (part 3) The Structures of Simple Solids

Metallic and Ionic Structures and Bonding

Free Electron Model for Metals

4. Interpenetrating simple cubic

Chapter 12 Solids and Modern Materials

Report Form for Experiment 6: Solid State Structures

Atomic Arrangement. Primer in Materials Spring

Atomic Arrangement. Primer Materials For Science Teaching Spring

Chapter 12 INTERMOLECULAR FORCES. Covalent Radius and van der Waals Radius. Intraand. Intermolecular Forces. ½ the distance of non-bonded

3-D Crystal Lattice Images

The electronic structure of solids. Charge transport in solids

EXAM TWO PART ONE CHM 451 (INORGANIC CHEMISTRY) DR. MATTSON 1 NOVEMBER 2012

ionic solids Ionic Solids

Unit wise Marks Distribution of 10+2 Syllabus

Chapter 4: Bonding in Solids and Electronic Properties. Free electron theory

Lecture 1. OUTLINE Basic Semiconductor Physics. Reading: Chapter 2.1. Semiconductors Intrinsic (undoped) silicon Doping Carrier concentrations

ELECTRONIC I Lecture 1 Introduction to semiconductor. By Asst. Prof Dr. Jassim K. Hmood

Experiment 7: Understanding Crystal Structures

Crystal Properties. MS415 Lec. 2. High performance, high current. ZnO. GaN

CLASS 12th. Semiconductors

Followed by metals and inert gases - close-packed structures Deviations: BCC metals 'Ionic' compounds strive to follow the principles.

Free Electron Model for Metals

Bonding and Packing: building crystalline solids

Chm October Molecular Orbitals. Instructions. Always show your work for full credit.

INORGANIC SOLIDS. Pigment. Garnet. Cement Visible rays : nm. Gold. Marble. Human Eyes Resolution = 0.07 mm

CHEMISTRY The Molecular Nature of Matter and Change

per unit cell Motif: Re at (0, 0, 0); 3O at ( 1 / 2, 0), (0, 0, 1 / 2 ) Re: 6 (octahedral coordination) O: 2 (linear coordination) ReO 6

VERY SHORT ANSWER TYPE QUESTIONS (1 Mark)

Semiconductors 1. Explain different types of semiconductors in detail with necessary bond diagrams. Intrinsic semiconductors:

Lecture 7: Extrinsic semiconductors - Fermi level

S.No. Crystalline Solids Amorphous solids 1 Regular internal arrangement of irregular internal arrangement of particles

Electrons, Holes, and Defect ionization

PY2N20 Material Properties and Phase Diagrams

A semiconductor is an almost insulating material, in which by contamination (doping) positive or negative charge carriers can be introduced.

CHEM Principles of Chemistry II Chapter 10 - Liquids and Solids

Chapter 12. Solids and Modern Materials

Lecture 3b. Bonding Model and Dopants. Reading: (Cont d) Notes and Anderson 2 sections

8. Relax and do well.

Diamond. Covalent Insulators and Semiconductors. Silicon, Germanium, Gray Tin. Chem 462 September 24, 2004

Electrical Properties

Metal Oxides. Types of metal oxides: 1. Metal monoxides (MO) such as TiO and NiO

* motif: a single or repeated design or color

Ceramic Materials. Chapter 2: Crystal Chemistry

What happens when substances freeze into solids? Less thermal energy available Less motion of the molecules More ordered spatial properties

Experiment 2a Models of the Solid State*

Chapter 12: Structures & Properties of Ceramics

Semiconductor Device Physics

Followed by metals and inert gases - close-packed structures Deviations: BCC metals 'Ionic' compounds strive to follow the principles.

Ionic bonding. Characteristics of ionic compounds. The ionic to covalent continuum. Not believed at first, but got the 1903 Nobel prize

Ga and P Atoms to Covalent Solid GaP

Introduction to Solid State

R measurements (resistivity, magnetoresistance, Hall). Makariy A. Tanatar

For this activity, all of the file labels will begin with a Roman numeral IV.

Lecture 2 Electrons and Holes in Semiconductors

Chemistry Instrumental Analysis Lecture 8. Chem 4631

Close-packing: - hexagonal close packing. - Cubic close packing. MO vs. band structure: - Diodes, QD

Mat E 272 Lecture 25: Electrical properties of materials

Inorganic Exam 1 Chm October 2010

Molecules and Condensed Matter

Definitions, Closest packing schemes Interstitial sites Other packing schemes Polymorphism (disintegrating buttons) Alloys. Closest packing of coins

ELEC311( 물리전자, Physical Electronics) Course Outlines:

V = IR or R = V I. R = ρ l A

Why is water so awesome?

From Last Time Important new Quantum Mechanical Concepts. Atoms and Molecules. Today. Symmetry. Simple molecules.

Week 13 MO Theory, Solids, & metals

character table, determine the reducible representation and irreducible components for the σ-bonding SALCs.

EE 346: Semiconductor Devices

V, I, R measurements: how to generate and measure quantities and then how to get data (resistivity, magnetoresistance, Hall). Makariy A.

Ch. 2: Energy Bands And Charge Carriers In Semiconductors

Microscopic Ohm s Law

Earth and Planetary Materials

Lecture 05 Structure of Ceramics 2 Ref: Barsoum, Fundamentals of Ceramics, Ch03, McGraw-Hill, 2000.

Two-dimensional lattice

130 points on 6 pages + a useful page 7

Draft of solution Exam TFY4220, Solid State Physics, 29. May 2015.

CME 300 Properties of Materials. ANSWERS: Homework 9 November 26, As atoms approach each other in the solid state the quantized energy states:

Earth Solid Earth Rocks Minerals Atoms. How to make a mineral from the start of atoms?

The Semiconductor in Equilibrium

Rutile TiO 2 tetragonal unit cell with a = b = Å, c = Å Fig. 1.32a: Ti positions, 2 per cell, corner(0,0,0) and body center( 21

The Solid State. Phase diagrams Crystals and symmetry Unit cells and packing Types of solid

MTLE-6120: Advanced Electronic Properties of Materials. Intrinsic and extrinsic semiconductors. Reading: Kasap:

Chapter 10 Review Packet

Crystals, packings etc.

Transcription:

Chem 241 Lecture 21 UMass Amherst Biochemistry... Teaching Initiative

Announcement March 26 Second Exam Recap Calculation of space filling Counting atoms Alloys Ionic Solids Rock Salt CsCl... 2

ZnS Sphalerite/ Zinc-blende Can be viewed as ccp in S 2- with Zn 2+ in half the Td holes. Since all the Td holes are completely contained within a single unit cell, all 4 Zn ions count in the unit cell There are two types of S anions, those in faces, 6/2 = 3 And those in corners, 8/8 = 1. The stoichiometry is 1:1; Z = 4 4,4-coordination... 3

Fluorite Structure Can be viewed as ccp in one ion with the other in all the T d holes. In the case of fluorite, this would be ccp in Ca 2+ with F- in all the T d holes. (Note anions not close packed, cations are.) Since there are twice as many Td holes in a close packed lattice (8) than there are spheres (4), the stoichiometry is 1:2. The formula unit is CaF 2 Z = 4. 8,4-coordination. In anti-fluorite, the positions of the cations and anions are reversed. E.g., Li 2 O. Here the lattice is ccp in O 2- with Li + in all the Td holes. 4,8-coordination... 4

Wurtzite Wurtzite (another polymorph of ZnS) Can be viewed as hcp in S 2- with Zn 2+ in ½ the Td holes. Stoichiometry = 1:1 Formula unit ZnS, Z = 2 4,4-coordination... 5

Nickel Arsenide Can be viewed as expanded hcp in As 2- with Ni 2+ in O h holes. Stoichiometry = 1:1 Formula unit = NiAs, Z = 2 6,6-coordination As sites are trigonal prismatic, not Oh Often preferred by MX compounds with polarizable (soft) ions. The possible M-M bonding between atoms in adjacent layers, and is thus common for alloys where the metals interact.... 6

Rutile (TiO 2 ) Can be viewed as expanded hcp in Ti 4+ with O 2- in ½ Oh holes Very distorted by tendancy of Ti(IV) to adopt Oh geometry. Each Ti 4+ is 6-coordinate, thus each O 2- is 3- coordinate, i.e., 6,3-coordination. Stoichiometry is 1:2 Formula unit is TiO 2, Z = 2... 7

Inorganic solids... 8

Perovskite, A a B b X n CaTiO 3, ABX 3 Idealized as a cube of B cations (1 per unit cell) surrounding an A cation completely contained in the center of the unit cell, with X atoms located in the O h holes on the cube edges (12/4 = 3). Usually A is large and has a small charge, B is small and has a large charge. The sum of the charges on the cations must = the sum of the charges on the anions, in this case 6. e.g., for perovskite Ca(II) + Ti(IV). But could be (III) and (III), or even mixed, as in La(Ni 0.5 Ir 0.5 )O 3. Often have interesting electrical properties... 9

Spinel MgAl 2 O 4, AB 2 X 4 Viewed as ccp array of O 2- ions with A occupying 1/8 of T d holes and B occupying ½ of O h holes. Normally B is smaller and more highly charged than A Inverse spinels have B atoms in the occupied T d holes and in ½ the occupied O h holes. B[AB]O4, where brackets denote the ions in the O h holes. Sometimes A and B are the same element: Fe(II)Fe(III) 2 O 4... 10

Ionic Radius... 11

Ionic Radius... 12

Lattice Energy MX(s) M + (g) + X - (g) ΔH L o... 13

Born-Mayer Equation... 14

Thermal Stability ΔH 0 = ΔH(CO 3 2- O 2- /CO 2 ) + ΔH L (MCO 3 ) ΔH L (MO)... 15

Counter Ions... 16

Solubility MX(s) M + (aq) + X - (aq)... 17

Electronic Structure MOT of small molecules can be extended to solids, which consist of an almost infinite number of atoms, ions, etc. 1. Particularly useful in explaining the electrical conductivities of materials. 2. Types of conductors a. metallic conductor: electrical conductivity decreases with increasing temperature b. semiconductor: electrical conductivity increases with increasing temperature. c. an insulator has very low electrical conductivity d. a superconductor has zero electrical resistance below a critical temperature.... 18

Inorganic solids Treat solid like a very large molecule that has a nearly infinite number of atoms, and thus a nearly infinite number of bonding MOs and antibonding MOs. (Tight binding approximation). a. Atomic orbitals of the same type, say the valence s orbitals, give rise to a large number of molecular orbitals that are very similar in energy. This is a band of energy levels, the example would be an s-band. b. The bands are separated from each other by band gaps, which are ranges of energies that contain no MOs. c. Building up bands (# of atoms = # of orbitals)... 19

Inorganic solids d. The result of carrying this out for a large number of atoms, is a large number of orbitals e. The upper and lower energy of the band is constrained by the energy of the most bonding and most antibonding level. f. since the energy range is finite, and the number of orbitals is the number of atoms in the solid, the band consists of a nearcontinuum of energy levels.... 20

Bands We can do the same for p-orbitals, d-orbitals, etc. to form p- and d-bands. a. since atomic p-orbitals are higher in energy that s- orbitals, the p-band will lie above the s-band in energy by an amount that is determined by the difference in energy of the atomic orbitals. b. the width (in energy) of a band is determined by the strength of the interaction between the orbitals. If the interaction is strong, the band will be wide. Sometimes the width of the band is sufficient for bands to overlap.... 21

Filling them up Now we need to put electrons into the bands. a. The highest level occupied in a band at T = 0 K is the Fermi level. In a case where the diatomic would fill the bonding, but not the antibonding, the Fermi level is in the middle of the band. b. Conduction band explains metallic conductors. c. The ability of the electrons to move in the solid is dependent on the uniformity of the material (purity of the material all atoms the same. d. the number of energy levels in a given energy range is the density of states, ρ, and is high in the middle of a band, and low at the edges. (0 in a band gap)... 22

Semimetals In some cases the highest energy level of a filled band is the same as the lowest energy of an empty band (there is no band gap), but since the density of states at the top edge of the lower band and the lower edge of the upper band is very low. Such solids are semimetals (e.g., graphite).... 23

Insulators Insulators are materials where a filled band is separated in energy from an empty band by a large band gap. Semiconductors are materials that have small band gaps, where empty bands can be populated thermal excitation of electrons from the filled band to the empty band. Thus, insulators are just semiconductors with large band gaps.... 24

Intrinsic semiconductors Bands in the pure material are close enough in energy to be thermally populated. - The promotion of electrons from the filled band into the empty band, introduces electrons into the empty band, and holes in the filled band. - The population of the upper band has Boltzmann-like temperature dependence, and thus the conductivity shows an exponential dependence with temperature. σ = σ 0 e -E gap/2kt -This predicts an activation energy equal to ½ the band gap.... 25

Extrinsic Semiconductors These are compounds where the semiconductor properties are the result of introducing impurities that produce either occupied donor bands (n-type) or empty acceptor bands (p-type) in the band gap of the pure material. -the process is called doping -very low levels of dopant (one atom per 10 9 ) are required. - Ex1. If you dope a Si crystal ([Ne]3s 2 3p 2 ) with As ([Ar]4s 2 4p 3 ), you introduce one additional valence e- per As. n-type - Ex2. If you dope a Si crystal ([Ne]3s 2 3p 2 ) with Ga ([Ar]4s 2 4p 1 ), you introduce one additional valence e- per As. p-type... 26

Homework Chapter 3: Exercises: 2, 4, 7,9, 16, 17... 27