TOSHIBA Power Transistor Module Silicon Epitaxial Type (Darlington power transistor in ) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Industrial Applications Unit: mm Package with heat sink isolated to lead (SIP pin) High collector power dissipation ( devices operation) : PT = W (Ta = C) High collector current: IC (DC) = ± A (max) High DC current gain: hfe = (min) (VCE = ± V, IC = ± A) Maximum Ratings (Ta = C) Characteristics Symbol NPN Rating PNP Unit Collector-base voltage V CBO V Collector-emitter voltage V CEO 8 8 V Emitter-base voltage V EBO V Collector current I C I CP Continuous base current I B.. A Collector power dissipation ( device operation) P C. W Collector power Ta = C. dissipation P T ( devices operation) Tc = C Isolation voltage V Isol V Junction temperature T j C Storage temperature range T stg to C A W JEDEC JEITA TOSHIBA -BD Weight:. g (typ.) Array Configuration R R 7 9 8 R R R. kω, R Ω --
Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance of junction to ambient ( devices operation, Ta = C) Thermal resistance of junction to case ( devices operation, Tc = C) Maximum lead temperature for soldering purposes (. mm from case for s) ΣR th (j-a) C/W ΣR th (j-c). C/W T L C Electrical Characteristics (Ta = C) (NPN transistor) Collector cut-off current I CBO V CB = V, I E = A µa Collector cut-off current I CEO V CE = 8 V, I B = A µa Emitter cut-off current I EBO V EB = V, I C = A.. ma Collector-base breakdown voltage V (BR) CBO I C = ma, I E = A V Collector-emitter breakdown voltage V (BR) CEO I C = ma, I B = A 8 V DC current gain h FE () V CE = V, I C = A h FE () V CE = V, I C = A Saturation voltage Collector-emitter V CE (sat) I C = ma, I B = ma. V Base-emitter V BE (sat) I C = ma, I B = ma. Transition frequency f T V CE = V, I C =. A MHz Collector output capacitance C ob V CB = V, I E = A, f = MHz pf Turn-on time t on Output. I B Input Switching time µs I B Storage time t stg. IB IB Ω V CC = V µs Fall time t f I B = I B = ma, duty cycle %. Emitter-Collector Diode Ratings and Characteristics (Ta = C) Forward current I FM A Surge current I FSM t = s, shot A Forward voltage V F I F = A, I B = A. V Reverse recovery time t rr I F = A, V BE = V, di F /dt = A/µs. µs Reverse recovery charge Q rr 8 µc --
Electrical Characteristics (Ta = C) (PNP transistor) Collector cut-off current I CBO V CB = V, I E = A µa Collector cut-off current I CEO V CE = 8 V, I B = A µa Emitter cut-off current I EBO V EB = V, I C = A.. ma Collector-base breakdown voltage V (BR) CBO I C = ma, I E = A V Collector-emitter breakdown voltage V (BR) CEO I C = ma, I B = A 8 V DC current gain h FE () V CE = V, I C = A h FE () V CE = V, I C = A Saturation voltage Collector-emitter V CE (sat) I C = A, I B = ma. V Base-emitter V BE (sat) I C = A, I B = ma. Transition frequency f T V CE = V, I C =. A MHz Collector output capacitance C ob V CB = V, I E = A, f = MHz pf Turn-on time t on Output. I B Input IB Switching time µs Storage time t stg I B.8 Ω µs V CC = V Fall time t f I B = I B = ma, duty cycle %. Emitter-Collector Diode Ratings and Characteristics (Ta = C) Forward current I FM A Surge current I FSM t = s, shot A Forward voltage V F I F = A, I B = A. V Reverse recovery time t rr I F = A, V BE = V, di F /dt = A/µs. µs Reverse recovery charge Q rr 8 µc --
(NPN transistor) Common emitter Tc = C I C V CE. VCE = V I C V BE.. IB =. ma Tc = C 7..8.....8 Base-emitter voltage V BE (V) DC current gain hfe VCE = V Tc = C h FE I C.... Collector-emitter voltage VCE (V).....8.. V CE I B IC = A Base current I B (ma) Tc = C.. Collector-emitter saturation voltage VCE (sat) (V). Tc = C V CE (sat) I C IC/IB = Base-emitter saturation voltage VBE (sat) (V). Tc = C V BE (sat) I C IC/IB =........ --
(PNP transistor) Common emitter Tc = C I C V CE...7. VCE = V I C V BE.. IB =. ma Tc = C 7..8.....8 Base-emitter voltage V BE (V) h FE I C. V CE I B DC current gain hfe VCE = V Tc = C.... Collector-emitter voltage VCE (V) )....8.. Tc = C.. IC = A Base current I B (ma) Collector-emitter saturation voltage VCE (sat) (V)... V CE (sat) I C IC/IB = Tc = C.. Base-emitter saturation voltage VBE (sat) (V)... V BE (sat) I C IC/IB = Tc = C.. --
IC max (pulsed)* Safe Operating Area (NPN Tr) IC max (pulsed)* Safe Operating Area (PNP Tr) ms ms µs ms ms µs......... *: Single nonrepetitive pulse Tc = C VCEO max Curves must be derated linearly with increase in temperature.... *: Single nonrepetitive pulse Tc = C VCEO max Curves must be derated linearly with increase in temperature... r th t w Transient thermal resistance rth ( C/W) Curves should be applied in thermal limited area. (single nonrepetitive pulse) Below figure show thermal resistance per unit versus pulse width. NPN PNP () devices operation Circuit board.... () () () -No heat sink and attached on a circuit board- () device operation () devices operation Pulse width t w (s) T j P T P T Ta Junction temperature increase Tj ( C) 8 () () () Circuit board Attached on a circuit board () device operation () devices operation () devices operation Total power dissipation PT (W) () () () () device operation () devices operation () 8 devices operation Attached on a circuit board Circuit board 8 8 Total power dissipation P T (W) Ambient temperature Ta ( C) --
RESTRICTIONS ON PRODUCT USE 77EAA TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( Unintended Usage ). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer s own risk. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice. 7 --