BCR191.../SEMB1 BCR191/F/L3 BCR191T/W BCR191S SEMB1. Type Marking Pin Configuration Package BCR191 BCR191F BCR191L3 2=E 2=E 2=E =C 3=C 3=C

Similar documents
Type Marking Pin Configuration Package BCX42 BSS63 1 = B 1 = B 2 = E 2 = E

BDP947_BDP949_BDP953. Silicon NPN Transistors. For AF driver and output stages High collector current High current gain

Type Marking Pin Configuration Package BC BC807-16W BC BC807-25W BC BC807-40W BC BC808-25W BC808-40

Type Marking Pin Configuration Package BCM846S 1Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

C1 (2) C2 (1) E1 (3) E2 (4) Type Marking Pin Configuration Package BCV61B BCV61C 2 = C1 2 = C1 1 = C2 1 = C2

Type Marking Pin Configuration Package BFN24 BFN26 1=B 1=B

C1 B2 E2 TR2 TR1 EHA Type Marking Pin Configuration Package BC817UPN 1Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74

Type Marking Pin Configuration Package BFN38 BFN38 1=B 2=C 3=E 4=C - - SOT223

Type Marking Pin Configuration Package BSP60 BSP61 BSP62 2=C 2=C 2=C 3=E 3=E 3=E

Type Marking Pin Configuration Package BCX42 DKs 1 = B 2 = E 3 = C SOT23. Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage V CEO

BCP51...-BCP53... Type Marking Pin Configuration Package BCP51 BCP51-16 BCP52-16 BCP53-10 BCP SOT223 SOT223 SOT223 SOT223 SOT223

BC BC Pb-containing package may be available upon special request

BFS483. Low Noise Silicon Bipolar RF Transistor

Type Marking Pin Configuration Package BCX68-10 BCX68-16 BCX =B 1=B 1=B

Type Marking Pin Configuration Package BCP68-25 * 1=B 2=C 3=E 4=C - - SOT223

Pb-free (RoHS compliant) package Qualified according AEC Q101 C1 (2) Type Marking Pin Configuration Package BCV62A BCV62B BCV62C 2 = C1 2 = C1 2 = C1

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

BCW60, BCX70. NPN Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage

Type Marking Pin Configuration Package BFR183 RHs 1=B 2=E 3=C SOT23

BCW61..., BCX71... PNP Silicon AF Transistors. For AF input stages and driver applications High current gain Low collector-emitter saturation voltage

BFS469L6. World's smallest SMD 6-pin leadless package Built in 2 transitors (TR1: die as BFR460L3, TR2: die as BFR949L3)

Type Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323

Type Marking Pin Configuration Package BFR182W RGs 1=B 2=E 3=C SOT323

COMPLEMENTARY NPN/PNP TRANSISTOR

Type Marking Pin Configuration Package BFR93AW R2s 1=B 2=E 3=C SOT323

Type Marking Pin Configuration Package BFR93A R2s 1=B 2=E 3=C SOT23

Type Marking Pin Configuration Package BFQ19S FG 1 = B 2 = C 3 = E SOT89

General Purpose Transistors

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

ESD (Electrostatic discharge) sensitive device, observe handling precaution!

DATA SHEET. PEMD48; PUMD48 NPN/PNP resistor-equipped transistors; R1 = 47 kω, R2 = 47 kω and R1 = 2.2 kω, R2 = 47 kω DISCRETE SEMICONDUCTORS

SMBT MMBT3906 SMBT3906S/U. Type Marking Pin Configuration Package SMBT3906S SMBT3906U

Type Marking Pin Configuration Package SMBT2907A/MMBT2907A s2f 1 = B 2 = E 3 = C SOT23

Type Marking Pin Configuration Package BCM856S 3Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363

BC807-16W/-25W/-40W Taiwan Semiconductor

BFR93A. NPN Silicon RF Transistor. For low-noise, high-gain broadband amplifiers at collector currents from 2 ma to 30 ma

Type Marking Pin Configuration Package SMBT2222A/MMBT2222A s1p 1 = B 2 = E 3 = C SOT23

BC556B, BC557A, B, C, BC558B. Amplifier Transistors. PNP Silicon BC556B PNP AUDIO 100MA 65V 500MW TO92.

DATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Mar 27.

DATA SHEET. BFQ226 NPN video transistor DISCRETE SEMICONDUCTORS Sep 04

Type Marking Pin Configuration Package BFR92P GFs 1=B 2=E 3=C SOT23

Type Marking Pin Configuration Package BFN27 FLs 1=B 2=E 3=C SOT23

2N3904 SMALL SIGNAL NPN TRANSISTOR

200mW, PNP Small Signal Transistor

BFP193. NPN Silicon RF Transistor*

BC BC Pb-containing package may be available upon special request

PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357

Type Marking Pin Configuration Package SMBTA06/MMBTA06 s1g 1=B 2=E 3=C SOT23

BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS

Hi-Reliability Optically Coupled Isolator

Type Marking Pin Configuration Package BCW66KF BCW66KG BCW66KH 1=B 1=B 1=B

2SC3457. isc Silicon NPN Power Transistor. isc Product Specification. INCHANGE Semiconductor. isc Website:

BFP196W. NPN Silicon RF Transistor*

Type Marking Pin Configuration Package BCW66F BCW66KF* BCW66G BCW66KG* BCW66H BCW66KH* 1=B 1=B 1=B 1=B 1=B 1=B

ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR183W RHs 1=B 2=E 3=C SOT323

DATA SHEET. BFG31 PNP 5 GHz wideband transistor DISCRETE SEMICONDUCTORS Sep 12

absolute maximum ratings at 25 C case temperature (unless otherwise noted)

MP6901 MP6901. High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Maximum Ratings (Ta = 25 C)

2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E 2=E

ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFR181 RFs 1=B 2=E 3=C SOT23

BC847BPDXV6T5G. SBC847BPDXV6 NPN/PNP Dual General Purpose Transistor

DISCRETE SEMICONDUCTORS DATA SHEET. BFQ149 PNP 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

DATA SHEET. BFQ225 NPN video transistor DISCRETE SEMICONDUCTORS Sep 04

BFP193. NPN Silicon RF Transistor* For low noise, high-gain amplifiers up to 2 GHz For linear broadband amplifiers f T = 8 GHz, F = 1 db at 900 MHz

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Apr 09

DATA SHEET. BCP69 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Nov 15.

DATA SHEET. BC846; BC847; BC848 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2002 Feb 04

DATA SHEET. BC368 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Dec 01.

DATA SHEET. BC369 PNP medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Nov 20.

DISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. PBSS4240DPN 40 V low V CEsat NPN/PNP transistor. Product specification 2003 Feb 20

BC856ALT1 Series. General Purpose Transistors. PNP Silicon. Pb Free Packages are Available. Features.

DATA SHEET. PBSS4250X 50 V, 2 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Jun 17

BAW56 BAW56S BAW56T BAW56U BAW56W

BC846, BC847, BC848 Series. General Purpose Transistors. NPN Silicon

4N25/ 4N26/ 4N27/ 4N28. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. Features.

DATA SHEET. PBSS4480X 80 V, 4 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2004 Aug 5

65 V, 100 ma NPN/PNP general-purpose transistor. Table 1. Product overview Type number Package NPN/NPN PNP/PNP Nexperia JEITA

DISCRETE SEMICONDUCTORS DATA SHEET. BFQ19 NPN 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

DATA SHEET. BC846W; BC847W; BC848W NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 23

BFP196W. NPN Silicon RF Transistor*

DATA SHEET. BC817DPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2002 Aug 09.

NPN/PNP low V CEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457 (SC-74) Surface Mounted Device (SMD) plastic package.

2N4123, 2N4124. General Purpose Transistors. NPN Silicon. Pb Free Packages are Available* Features MAXIMUM RATINGS

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.

P2N2907ARL1G. Amplifier Transistor. PNP Silicon. These are Pb -Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS

DATA SHEET. BC856; BC857; BC858 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 12

DATA SHEET. PBSS5350D 50 V low V CEsat PNP transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 13.

DATA SHEET. PBSS4540Z 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Jul Nov 14.

DATA SHEET. PH2369 NPN switching transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Oct 11.

PNP power transistor

150 V, 2 A NPN high-voltage low V CEsat (BISS) transistor

4N35/ 4N36/ 4N37. Optocoupler with Phototransistor Output. Vishay Telefunken. Description. Applications. Features.

2N5401. PNP Silicon. These are Pb Free Devices* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS MARKING DIAGRAM

BC487, BC487B. High Current Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM

2N2904A-2N2905A 2N2906A-2N2907A

DISCRETE SEMICONDUCTORS DATA SHEET. BFS17 NPN 1 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14

BC546 / 547 / 548. Small Signal Transistors (NPN) Vishay Semiconductors

Transcription:

PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω, R = kω ) For 6PIN packages: two (galvanic) internal isolated transistors with good matching in one package BCR9/F/L BCR9T/W C C B E 6 5 4 R R R TR R R TR R B E E B C EHA78 EHA77 Type Marking Pin Configuration Package BCR9 BCR9F BCR9L WOs WOs WO =B =B =B =E =E =E =C =C =C WOs =E =B =C 4=E 5=B 6=C BCR9T BCR9W WOs WOs WO =B =B =E =E =E =B =C =C =C 4=E 5=B 6=C SOT TSFP TSLP4 SOT6 SC75 SOT SOT666 May84

Maximum Ratings Parameter Symbol Value Unit Collectoremitter voltage V CEO 5 V Collectorbase voltage V CBO 5 Emitterbase voltage V EBO Input on voltage V i(on) Collector current I C ma Total power dissipation P tot BCR9, C BCR9F, 8 C BCR9L, 5 C, 5 C BCR9T, 9 C BCR9W, 4 C, 75 C 5 5 5 5 5 5 Junction temperature T j 5 C Storage temperature T stg 5... 65 Thermal Resistance Parameter Symbol Value Unit Junction soldering point ) R thjs BCR9 BCR9F BCR9L BCR9T BCR9W 4 9 6 4 65 5 For calculation of RthJA please refer to Application Note Thermal Resistance May84

Electrical Characteristics at T A = 5 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Collectoremitter breakdown voltage I C = µa, I B = V (BR)CEO 5 V Collectorbase breakdown voltage I C = µa, I E = Collectorbase cutoff current V CB = 4 V, I E = Emitterbase cutoff current V EB = V, I C = DC current gain ) I C = 5 ma, V CE = 5 V Collectoremitter saturation voltage ) I C = ma, I B =,5 ma Input off voltage I C = µa, V CE = 5 V Input on voltage I C = ma, V CE =, V V (BR)CBO 5 I CBO na I EBO 5 µa h FE 5 V CEsat, V V i(off),8,5 V i(on),5 Input resistor R 5 9 kω Resistor ratio R /R,9, AC Characteristics Transition frequency I C = ma, V CE = 5 V, f = MHz Collectorbase capacitance V CB = V, f = MHz f T MHz C cb pf Pulse test: t < µs; D < % May84

DC current gain h FE = ƒ(i C ) V CE = 5 V (common emitter configuration) Collectoremitter saturation voltage V CEsat = ƒ(i C ), h FE = ma hfe IC ma I C Input on Voltage Vi (on) = ƒ(i C ) V CE =.V (common emitter configuration)....4.5.6.7.8 V V CEsat Input off voltage V i(off) = ƒ(i C ) V CE = 5V (common emitter configuration) ma ma IC IC V V i(on).5.5 V V i(off) 4 May84

BCR9 BCR9F 5 5 5 5 4 6 8 C 5 4 6 8 C 5 BCR9L 5 5 5 5 4 6 8 C 5 4 6 8 C 5 5 May84

BCR9T BCR9W 5 5 5 5 4 6 8 C 5 4 6 8 C 5 5 5 4 6 8 C 5 6 May84

R thjs = ƒ( ) BCR9 BCR9.5...5...5 D = max / DC D =.5...5...5 6 5 4 s Permissible Puls Load R thjs = ƒ ( ) BCR9F 6 5 4 s BCR9F D=.5...5...5 max/dc D=.5...5...5 6 5 4 s 6 5 4 s 7 May84

Permissible Puls Load R thjs = ƒ ( ) BCR9L BCR9L.5...5...5 D = max/ DC D =.5...5...5 7 6 5 4 s Permissible Puls Load R thjs = ƒ ( ) 7 6 5 4 s.5...5...5 D = max / DC D =.5...5...5 6 5 4 s 6 5 4 s 8 May84

Permissible Puls Load R thjs = ƒ ( ) BCR9T BCR9T D=.5...5...5 max / DC D=.5...5...5 6 5 4 s Permissible Puls Load R thjs = ƒ ( ) BCR9W 6 5 4 s BCR9W.5...5...5 D = max / DC D =.5...5...5 6 5 4 s 6 5 4 s 9 May84

Permissible Puls Load R thjs = ƒ ( ).5...5...5 D = max/ DC D =.5...5...5 7 6 5 4 s 7 6 5 4 s May84