Index A acceptor 275 accumulation layer 35, 45, 57 activation energy 157 Auger electron spectroscopy (AES) 90 anode 44, 46, 55 9, 64, 182 anode current 45, 49, 65, 77, 106, 128 anode voltage 45, 52, 65, 84, 106, 127 atomic transfer 7 Auger effect 261 Auger recombination 65, 182 Avalanche 25, 39, 249, 261 avalanche phototransistor 261 axon 205 B back gate 241 band bending 45 bandgap 39, 56, 91, 274 bandgap narrowing 65, 182 bandgap reference 213 band-to-band 155, 252 barrier height 281 binding energy 115 bipolar action 163, 258 Bloch 286 body contact 159 Boltzmann approximation 117 boundary condition 91, 280 Bragg reflaction 286 breakdown 39 buried oxide 35, 44 51, 89, 238 buried channel 56 C capacitance 89 carbon nanotube 258 cathode 44, 46, 57 60, 182 cathode current 45, 52, 54 6, 113 cathode voltage 45, 77, 114, 122 cavity 225, 258 charge pumping 241 Clausius-Mossotti relation 90 cluster density 90 conduction band 37, 273, 275 confinement 107, 130, 155, 278, 279 Coulomb interaction 263 Coulomb potential 264 cross-correlative spectral density 83 CTAT 214 current continuity 12, 276 current fluctuation 82 D de Bloglie 276 Debye length 35, 43, 45, 47, 52, 58 deep level 157, 149 deep trap 93 defect 30, 223 degenerate 273 d function 283 density of states 119, 273, 274, 282 SOI Lubistors: Lateral, Unidirectional, Bipolar-type Insulated-gate Transistors, First Edition. Yasuhisa Omura. Ó 2013 John Wiley & Sons Singapore Pte. Ltd. Published 2013 by John Wiley & Sons Singapore Pte. Ltd.
296 Index depletion layer 33, 57, 61 depletion region 3 dielectric constant 91 dielectric material 91 differential conductance 145 differential equation 289, 291 diffusion constant 3, 79 diffusion current 7, 13, 28 30, 275 diffusion length 59, 61, 163, 183 direct bandgap 261 donor 275 doping concentration 44, 51, 275 doping level 32 double injection 159 drain 160 drift current 9, 18, 24, 29, 30, 275 DT-MOSFET 159, 167 dynamic threshold 159, 167 E effective band gap 124 effective charge density 100 effective mass 245, 263, 274 effective mass approximation 147 eigenvalue 279 eigenfunction 279 Einstein relation 10, 275 electroluminescence 258 electrostatic discharge 39 electric field shielding 55, 61 electron 3, 54, 56 electron concentration 56 8 electron density 13, 273 electron-electron interaction 262, 264 electronic state 282 electron injection 55 energy barrier 254, 281 energy conservation energy level 25 equivalent capacitance 97 equivalent circuit 67, 180 equivalent input noise 84 electrostatic destroy (ESD) protection 65, 179 excitatory 205 F frequency division modulation (FDM) 223 FDTD 224 feedback FET 39, 254 Fermi-Dirac function 273 Fermi level 273 4 Fermi level gradient Fermi s golden rule 134, 282 final state 282 firing of neuron 210 flat-band voltage 45, 58, 59, 238 forward bias 4, 8, 49, 55, 156, 237, 283 front gate 238 G GaAs 39, 273 G valley 134 gate electric field gate electrode 32 gate-controlled 32, 49, 159, 167, 239 gate insulator 45, 60 gate oxide 51, 55, 56, 58, 237 gate voltage 238 Ge 39, 273 generation 3, 237 generation rate 276 generation-recombination 66, 143, 155 grounded-gate 185 H Hamiltonian 277 8 human body model (HBM) 189 hetero layer 261 high-quality SOI layer 67 hole 3, 45, 54 5 hole concentration 55 8 hole density 35 Hooge model 84 Hooge parameter 84 hydrodynamic simulation 186 hydrogen anneling 241 I ideality factor 4, 79, 118, 237 i-mos 249 impact ionization 261, 264, 268
Index 297 impurity energy level 124 imref 8 imref gradient 9 incoherence 278 indirect bandgap 39, 127, 264 inelastic collision 268 inhibitory 206 initial state 282 injection 18, 45 6, 55 insulator 32, 45, 47 integration 289 interband transition 286 interface 35, 45, 58, 59, 238, 280 intermediate state 286 internal electric field 100 intrinsic carrier concentration 61, 92, 274 intrinsic Fermi level 25 intrinsic semiconductor 274 intrinsic temperature 192 inversion layer 32, 68, 113, 145, 155, 238 I/O buffer 183 J Joel heating 192 junction current 8, 15, 24, 34 K Keldish formula 264 Klein Gordon equation 291 L lifetime 7, 16, 23, 25, 30, 32, 59, 66, 181, 237, 276 local electric field 9, 18 LOCOS 96 logic circuit 217 low dimensional 105, 249, 282 low frequency 244 low temperature 111, 137, 143, 155, 167 low voltage 217 lucky electron 265 M majority carrier 3, 7, 26, 43, 45, 46, 50, 55, 56 8 matrix element 136, 264, 284 mean free time 268 micro twins 67 minority carrier 3, 7, 13, 16, 23, 30, 37, 45, 46, 50, 54, 56, 59, 61, 167 mobility 16, 23, 30, 58, 66, 183 mobility fluctuation 82 mobility ratio 54 momentum conservation 128, 286 Moss law 91 multi-negative conductance 134 multiplication 249 N negative conductance 39, 105, 127 negative differential conductance 39, 155 neural network 199 nmos transistor 199 noise 75 nondegenerate 273 O offset gate 46, 256 one dimensional 58, 127, 223, 265, 279 1/f noise 81 on-resistance 192 operator method 290, 291 optical optical modulator 224 oscillation-like feature 114 oxygen-doped silicon 49 P parasitic resistance 4 parasitic bipolar action 122 perturbation theory 264 phonon-assisted tunneling 134 photon absorption 284 photodiode 261 photomultiplier 261 photonic bandgap 223 photonic crystal 223 Plank s constant 277 Poisson s equation 94 potential barrier 254 PTAT 214
298 Index Q quantum efficiency 261 quantum mechanical 37, 122, 262, 284 quantum mechanics 276 quantum well 258, 261, 280 quantum-effect devices 105 quasi particle 277 quasi-fermi level 8, 11, 17, 21 quasi-neutral region 4, 8, 13, 14, 17, 22, 26, 32, 33 R radiation hardness 241 recombination 3, 8, 17, 24, 46, 55, 58, 59, 237 recombination heating 192 refractive index 91, 234 resonance effect 136 reverse bias 24, 25, 30, 32, 35, 36, 45, 145, 237 ring resonator 233 S saturation current 4, 79, 181 Schroedinger s equation 276, 291 self-heating 186 semiconductor 3, 7, 35, 273 semi-excitatory 206 shallow level 149, 157 sharp swing 249 Shockley 3, 43, 268 Shockley-Read-Hall 65, 182 Si 39, 44, 49, 50, 51, 56, 57, 58, 273 sigmoid function 204 silicon oxide SIMOX 61, 65, 89, 144, 155, 159, 167, 183 single negative conductance 134 SIPOS 89 specral density 77 spin-orbital interaction 268 spintronix 268 stationary state 276 steep swing 249, 254 step-like feature 114 stochastic-response 210 STT 39, 40, 105, 217 subband 106 subthreshold swing 217, 241 sum-of-product 210 susceptibility 91 switching delay 217 synapse 203 T time division modulation (TDM) 223 transmission electron microscopy (TEM) 66 tetrode-like 202 thermal conductivity 184 thermal destruction 193 thermal equilibrium 124, 275 thermal voltage 213 threshold energy 265, 269 threshold voltage 164, 255 time-dependent 277 Thomson heating 192 transconductance 170 transition 262 transition layer 90 transition rate 263, 265 transmission 223 transport 35, 265 trap density 25, 30, 237, 243 trap level 245 triode-like 43, 201 tunnel 39, 281 tunnel current 282 tunnel FET 39, 40, 217, 251 tunnel probability 281 two dimensional 127, 143, 155, 181, 223, 268 two-dimensional subband system (2DSS) 112 thyristor 184 U ultra-thin SOI 155, 159, 254 V valence band 37, 261, 273 vector potential 285 virtual junction 145, 155 voltage reference 213
Index 299 W wavefunction 123, 279, 286 waveguide 223 wave length 223 wide bandgap 263 worn-out 191 X cross-sectional scanning electron microscope (XSEM) 95 cross-sectional transmission electron microscope (XTEM) 128 X valley 134