Ultrafast Rectifier, 8 FRED Pt TO-63 (D PK) ase cathode 1 3 N/C node VS-8ETU04SHM3 PRODUCT SUMMRY N/C TO-6 1 3 node Package TO-63 (D PK), TO-6 I F(V) 8 V R 400 V V F at I F 0.94 V t rr typ. 35 ns T J max. 175 C Diode variation Single die VS-8ETU04-1HM3 FETURES Ultrafast recovery time Low forward voltage drop Low leakage current 175 C operating junction temperature Meets MSL level 1, per J-STD-00, LF maximum peak of 60 C EC-Q1 qualified, meets JESD 01, class 1 whisker test Material categorization: for definitions of compliance please see /doc?9991 DESCRIPTION / PPLICTIONS FRED Pt series are the state of the art ultrafast recovery rectifiers specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. SOLUTE MXIMUM RTINGS PRMETER SYMOL TEST CONDITIONS MX. UNITS Repetitive peak reverse voltage V RRM 400 V verage rectified forward current I F(V) T C = 155 C 8 Non-repetitive peak surge current I FSM T C = 5 C 0 Repetitive peak forward current I FRM 16 Operating junction and storage temperatures T J, T Stg -55 to +175 C ELECTRICL SPECIFICTIONS (T J = 5 C unless otherwise specified) PRMETER SYMOL TEST CONDITIONS MIN. TYP. MX. UNITS reakdown voltage, blocking voltage V R, V R I R = 0 μ 400 - - I F = 8-1.19 1.3 Forward voltage V F I F = 8, T J = 150 C - 0.94 1.0 V R = V R rated - 0. Reverse leakage current I R T J = 150 C, V R = V R rated - 0 500 μ Junction capacitance C T V R = 400 V - 14 - pf Series inductance L S Measured lead to lead 5 mm from package body - 8.0 - nh V Revision: 5-ug-15 1 Document Number: 95841 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?900
DYNMIC RECOVERY CHRCTERISTICS (T J = 5 C unless otherwise specified) PRMETER SYMOL TEST CONDITIONS MIN. TYP. MX. UNITS Reverse recovery time t rr T J = 5 C - 43 - ns I F = 1.0, di F /dt = 50 /μs, V R = 30 V - 35 60 T J = 15 C - 67 - Peak recovery current I RRM T J = 5 C I F = 8 -.8 - di F /dt = 00 /μs T J = 15 C V R = 00 V - 6.3 - T J = 5 C - 60 - Reverse recovery charge Q rr T J = 15 C - - nc THERML - MECHNICL SPECIFICTIONS PRMETER SYMOL TEST CONDITIONS MIN. TYP. MX. UNITS Maximum junction and storage temperature range T J, T Stg -55-175 C Thermal resistance, junction to case R thjc - 1.8.0 Thermal resistance, junction to ambient R thj Typical socket mount - - 50 Mounting surface, flat, smooth Thermal resistance, case to heatsink R thcs - 0.5 - and greased Weight Mounting torque Marking device Case style TO-63 (D PK) Case style TO-6 C/W -.0 - g - 0.07 - oz. 6.0 (5.0) - 1 () 8ETU04SH 8ETU04-1H kgf cm (lbf in) 0 00 I F - Instantaneous Forward Current () 1 T J = 175 C T J = 150 C T J = 5 C I R - Reverse Current (µ) 0 1 0.1 0.01 0.001 T J = 175 C T J = 150 C T J = 15 C T J = 0 C T J = 5 C 0.1 0 0.5 1.0 1.5.0.5 V F - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 0.0001 0 0 00 300 400 V R - Reverse Voltage (V) Fig. - Typical Values of Reverse Current vs. Reverse Voltage Revision: 5-ug-15 Document Number: 95841 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?900
00 C T - Junction Capacitance (pf) 0 T J = 5 C 0 0 00 300 400 V R - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Z thjc - Thermal Impedance ( C/W) 1 D = 0.50 t 1 D = 0.0 0.1 D = 0. t D = 0.05 Notes: Single pulse D = 0.0 1. Duty factor D = t 1 /t (thermal resistance) D = 0.01.. Peak T J = P DM x Z thjc + T C. 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t 1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance Z thjc Characteristics P DM 180 14 llowable Case Temperature ( C) 170 160 150 140 See note (1) 130 0 4 6 DC Square wave (D = 0.50) Rated V R applied 8 1 verage Power Loss (W) 1 8 6 4 DC RMS limit D = 0.01 D = 0.0 D = 0.05 D = 0. D = 0.0 D = 0.50 0 0 4 6 8 1 I F(V) - verage Forward Current () I F(V) - verage Forward Current () Fig. 5 - Maximum llowable Case Temperature vs. verage Forward Current Fig. 6 - Forward Power Loss Characteristics Revision: 5-ug-15 3 Document Number: 95841 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?900
t rr (ns) 90 80 70 60 50 V R = 00 V T J = 15 C T J = 5 C Q rr (nc) 500 450 400 350 300 50 00 V R = 00 V T J = 15 C T J = 5 C I F = 16 I F = 8 40 150 30 I F = 16 I F = 8 0 50 0 0 00 0 0 00 di F /dt (/µs) di F /dt (/µs) Fig. 7 - Typical Reverse Recovery Time vs. di F /dt Fig. 8 - Typical Stored Charge vs. di F /dt Note (1) Formula used: T C = T J - (Pd + Pd REV ) x R thjc ; Pd = Forward power loss = I F(V) x V FM at (I F(V) /D) (see fig. 6); Pd REV = Inverse power loss = V R1 x I R (1 - D); I R at V R1 = Rated V R (3) t rr 0 I F t a tb () I RRM (4) Q rr 0.5 I RRM di (rec)m /dt (5) 0.75 I RRM (1) di F /dt (1) di F /dt - rate of change of current through zero crossing (4) Q rr - area under curve defined by t rr and I RRM () I RRM - peak reverse recovery current (3) t rr - reverse recovery time measured from zero crossing point of negative going I F to point where a line passing through 0.75 I RRM and 0.50 I RRM extrapolated to zero current. Q rr = Fig. 9 - Reverse Recovery Waveform and Definitions t rr x I RRM (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr Revision: 5-ug-15 4 Document Number: 95841 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?900
ORDERING INFORMTION TLE Device code VS- 8 E T U 04 S TRL H M3 1 3 4 5 6 7 8 9 1 - product - Current rating (8 ) 3 - E = single diode 4 - T = TO-0, D PK 5 - U = ultrafast recovery 6 - Voltage rating (04 = 400 V) 7 - S = D PK -1 = TO-6 8 - None = tube (50 pieces) TRL = tape and reel (left oriented, for D PK package) TRR = tape and reel (right oriented, for D PK package) 9 - H = EC-Q1 qualified - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMTION (Example) PREFERRED P/N QUNTITY PER T/R MINIMUM ORDER QUNTITY PCKGING DESCRIPTION VS-8ETU04SHM3 50 00 ntistatic plastic tube VS-8ETU04STRRHM3 800 800 13"diameter reel VS-8ETU04STRLHM3 800 800 13"diameter plastic reel VS-8ETU04-1HM3 50 00 ntistatic plastic tube LINKS TO RELTED DOCUMENTS Dimensions TO-63 (D PK) /doc?95046 TO-6 /doc?95419 Part marking information TO-63 (D PK) /doc?95444 TO-6 /doc?95443 Packaging information TO-63 (D PK) /doc?9503 Revision: 5-ug-15 5 Document Number: 95841 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?900
DIMENSIONS in millimeters and inches D PK Outline Dimensions Conforms to JEDEC outline D PK (SMD-0) (3) L1 ()(3) E 4 c (E) (D1) (3) Pad layout 11.00 MIN. (0.43) 9.65 MIN. (0.38) D L x e 1 3 H () x b x b C Detail 0.0 M M c ± 0.004 M E1 View - H (3) 17.90 (0.70) 15.00 (0.65).3 MIN. (0.08) Plating.64 (0.3).41 (0.096) (4) b1, b3 3.81 MIN. (0.15) ase Metal Gauge plane Lead tip 0 to 8 L3 L L4 Detail Rotated 90 CW Scale: 8:1 1 Seating plane (c) (b, b) Section - and C - C Scale: None c1 (4) SYMOL MILLIMETERS INCHES MILLIMETERS INCHES NOTES SYMOL MIN. MX. MIN. MX. MIN. MX. MIN. MX. NOTES 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.70 0.315 3 1 0.00 0.54 0.000 0.0 E 9.65.67 0.380 0.40, 3 b 0.51 0.99 0.00 0.039 E1 7.90 8.80 0.311 0.346 3 b1 0.51 0.89 0.00 0.035 4 e.54 SC 0.0 SC b 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.65 b3 1.14 1.73 0.045 0.068 4 L 1.78.79 0.070 0.1 c 0.38 0.74 0.015 0.09 L1-1.65-0.066 3 c1 0.38 0.58 0.015 0.03 4 L 1.7 1.78 0.050 0.070 c 1.14 1.65 0.045 0.065 L3 0.5 SC 0.0 SC D 8.51 9.65 0.335 0.380 L4 4.78 5.8 0.188 0.08 Notes (1) Dimensioning and tolerancing per SME Y14.5 M-1994 () Dimension D and E do not include mold flash. Mold flash shall not exceed 0.17 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum and to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC outline TO-63 Revision: 08-Jul-15 1 Document Number: 95046 For technical questions within your region: Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUJECT TO CHNGE WITHOUT NOTICE. THE PRODUCTS DESCRIED HEREIN ND THIS DOCUMENT RE SUJECT TO SPECIFIC DISCLIMERS, SET FORTH T /doc?900
Outline Dimensions TO-6 DIMENSIONS in millimeters and inches Modified JEDEC outline TO-6 (Datum ) () (3) E (3) L1 c E D Seating plane D1(3) L 1 C 3 C L () x e 0.0 M M Lead tip 3 x b 3 x b c Lead assignments 1 Diodes 1. - node (two die)/open (one die)., 4. - Cathode 3. - node Plating c E1 Section - (4) ase b1, b3 metal (b, b) (3) c1 (4) Section - and C - C Scale: None SYMOL MILLIMETERS INCHES MIN. MX. MIN. MX. NOTES 4.06 4.83 0.160 0.190 1.03 3.0 0.080 0.119 b 0.51 0.99 0.00 0.039 b1 0.51 0.89 0.00 0.035 4 b 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 4 c 0.38 0.74 0.015 0.09 c1 0.38 0.58 0.015 0.03 4 c 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 D1 6.86 8.00 0.70 0.315 3 E 9.65.67 0.380 0.40, 3 E1 7.90 8.80 0.311 0.346 3 e.54 SC 0.0 SC L 13.46 14. 0.530 0.555 L1-1.65-0.065 3 L 3.56 3.71 0.140 0.146 Notes (1) Dimensioning and tolerancing as per SME Y14.5M-1994 () Dimension D and E do not include mold flash. Mold flash shall not exceed 0.17 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Controlling dimension: inches (6) Outline conform to JEDEC TO-6 except 1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline Document Number: 95419 For technical questions within your region, please contact one of the following: Revision: 04-Oct- Diodesmericas@vishay.com, Diodessia@vishay.com, DiodesEurope@vishay.com 1
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